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28 Jan 2013

Volume 102, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 041101 (2013); http://dx.doi.org/10.1063/1.4777564 (5 pages)

K. Winkler, C. Schneider, J. Fischer, A. Rahimi-Iman, M. Amthor, A. Forchel, S. Reitzenstein, S. Höfling, and M. Kamp
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Electrically tunable molecular doping of graphene

A. K. Singh, M. A. Uddin, J. T. Tolson, H. Maire-Afeli, N. Sbrockey, G. S. Tompa, M. G. Spencer, T. Vogt, T. S. Sudarshan, and G. Koley

Appl. Phys. Lett. 102, 043101 (2013); http://dx.doi.org/10.1063/1.4789509 (5 pages)

Online Publication Date: 28 January 2013

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Electrical tunability of molecular doping of graphene has been investigated using back-gated field effect transistors. Variation of the gate voltage from positive to negative values resulted in reduced p-type doping by NO2, which decreased below detection limit at −45 V. A reverse trend was observed for NH3, where its n-type doping increased with more negative gate voltage, becoming undetectable at 5 V. Our results indicate that adsorption induced molecular doping of graphene could not be detected when the Fermi level coincides with the adsorption induced defect states, which yields NO2 acceptor energy level of ∼320 meV below the Dirac point.
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61.72.up Other materials
68.43.Mn Adsorption kinetics

Eliminating defects from graphene monolayers during chemical exfoliation

Pawan Kumar Srivastava and Subhasis Ghosh

Appl. Phys. Lett. 102, 043102 (2013); http://dx.doi.org/10.1063/1.4789517 (5 pages)

Online Publication Date: 28 January 2013

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Graphene layers with and without defects have been grown by chemically exfoliating graphite in organic solvents and characterized by different spectroscopic techniques. It has been shown that defects can be controlled in graphene layers while intercalating different organic molecules in graphite. The transfer characteristics of transistors fabricated on graphene monolayers exfoliated using organic solvent with low dielectric constant and low boiling point show almost no shift of minimum conductivity point, i.e., Dirac point, indicating defect free pristine graphene.
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81.05.ue Graphene
77.22.Ch Permittivity (dielectric function)
85.30.Tv Field effect devices
64.70.fh Boiling and bubble dynamics

Chiroptical hot spots in twisted nanowire plasmonic oscillators

Yiqiao Tang, Li Sun, and Adam E. Cohen

Appl. Phys. Lett. 102, 043103 (2013); http://dx.doi.org/10.1063/1.4789529 (4 pages)

Online Publication Date: 28 January 2013

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We image the chiroptical response of crossed nanowire junctions as a function of the vertical offset between the nanowires and the incident wavelength. These samples show chiroptical “hot spots” with strongly localized circular differential scattering at the nanowire crossing points. These chiroptical hot spots are not apparent in the spatially averaged spectra. The sign and magnitude of the chiroptical enhancement show a complex dependence on sample geometry, which we reproduce with a fully retarded analytical scattering model. These results suggest strategies for engineering devices with enhanced chiral light-matter interactions.
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42.79.-e Optical elements, devices, and systems
42.70.-a Optical materials

Thermal conductivity measurement of individual Bi2Se3 nano-ribbon by self-heating three-ω method

Guodong Li, Dong Liang, Richard L. J. Qiu, and Xuan P. A. Gao

Appl. Phys. Lett. 102, 043104 (2013); http://dx.doi.org/10.1063/1.4789530 (4 pages)

Online Publication Date: 28 January 2013

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We report thermal conductivity measurements of individual single crystalline Bi2Se3 nano-ribbon (NR) synthesized via the gold nanoparticle catalyzed vapor-liquid-solid mechanism. By using the four-probe third harmonic method, thermal conductivity of Bi2Se3 NRs was obtained in the temperature range of 10 K to 300 K. It is found that the measured thermal conductivities are nearly two orders of magnitude smaller than the bulk value and have a maximum thermal conductivity at temperature (around 200 K) greater than the bulk. The significant reduced thermal conductivity of NRs is attributed to enhanced phonon boundary scattering in nanostructured material.
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66.70.Df Metals, alloys, and semiconductors
61.46.Df Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)
81.16.Hc Catalytic methods
81.40.Gh Other heat and thermomechanical treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
63.22.Kn Clusters and nanocrystals

Investigation of electrical transport in anodized single TiO2 nanotubes

Masashi Hattori, Kei Noda, Tatsuya Nishi, Kei Kobayashi, Hirofumi Yamada, and Kazumi Matsushige

Appl. Phys. Lett. 102, 043105 (2013); http://dx.doi.org/10.1063/1.4789763 (4 pages)

Online Publication Date: 29 January 2013

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Electrical transport in anodized single titania nanotube (TNT) free from any structural effects of titania nanotube array (TNA) was investigated. An anodized TNA was disassembled into single TNTs with two-step anodization technique. Then, single TNT bridges between gold electrodes with a gap of 500 nm were prepared by dielectrophoretic alignment. Quantitative assessment of electron mobility inside single anatase and rutile TNT was carried out by 2-probe current-voltage measurement and analysis based on a metal-semiconductor-metal circuit model with Schottky barriers. Our approach to intrinsic electrical transport of single nanotube is quite effective for understanding the electronic and optical properties of TNA.
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72.20.Fr Low-field transport and mobility; piezoresistance
61.46.Fg Nanotubes
82.45.Yz Nanostructured materials in electrochemistry
81.65.Cf Surface cleaning, etching, patterning
73.30.+y Surface double layers, Schottky barriers, and work functions
72.80.Jc Other crystalline inorganic semiconductors

Spatially resolved photocurrents in graphene nanoribbon devices

Eberhard Ulrich Stützel, Thomas Dufaux, Adarsh Sagar, Stephan Rauschenbach, Kannan Balasubramanian, Marko Burghard, and Klaus Kern

Appl. Phys. Lett. 102, 043106 (2013); http://dx.doi.org/10.1063/1.4789850 (5 pages)

Online Publication Date: 29 January 2013

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We present here a scanning photocurrent microscopy study of individual graphene nanoribbons, revealing pronounced photocurrent responses close to the nanoribbon/metal contacts. The magnitude of the corresponding photocurrent signal was found to be directly proportional to the conductance of the devices, suggesting that a local voltage source is generated at the nanoribbon/metal interface by the photo-thermoelectric Seebeck effect. The dominance of this mechanism is attributed to the reduced thermal conduction capability of the nanoribbons in comparison to extended graphene sheets.
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85.65.+h Molecular electronic devices
85.35.-p Nanoelectronic devices

Two-color femtosecond strobe lighting of coherent acoustic phonons emitted by quantum dots

Emmanuel Péronne, Eric Charron, Serge Vincent, Sébastien Sauvage, Aristide Lemaître, Bernard Perrin, and Bernard Jusserand

Appl. Phys. Lett. 102, 043107 (2013); http://dx.doi.org/10.1063/1.4789872 (4 pages)

Online Publication Date: 29 January 2013

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The transient acoustic pulse emitted by a single InAs quantum dots layer was measured depending on the pump wavelength. By tuning the pump wavelength through the transition energies of the GaAs barrier, the wetting layer and the quantum dots themselves, the acoustic phonon emission is shown to be strongly correlated to the electronic structure of the quantum dots layer system. The contributions of the wetting layer and the quantum dots to the acoustic signal were clearly identified and quantified by comparing different regions of the same sample containing or not quantum dots.
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78.47.J- Ultrafast spectroscopy (<1 psec)
62.65.+k Acoustical properties of solids
73.21.La Quantum dots
78.67.Hc Quantum dots
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Reducing minimum flash ignition energy of Al microparticles by addition of WO3 nanoparticles

Yuma Ohkura, Pratap M. Rao, In Sun Cho, and Xiaolin Zheng

Appl. Phys. Lett. 102, 043108 (2013); http://dx.doi.org/10.1063/1.4790152 (4 pages)

Online Publication Date: 30 January 2013

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Aluminum (Al) is an attractive solid fuel for rocket propulsion and energy conversion systems due to its large volumetric energy density, earth abundance, and low cost. Nonintrusive optical flash ignition is attractive for many applications due to its simplicity and flexibility in controlling the area exposed to the flash. However, flash ignition of Al microparticles (MPs) is challenging due to their higher minimum flash ignition energy, which originates from weaker light absorption and higher ignition temperature compared to Al nanoparticles (NPs). Herein, the minimum flash ignition energy of Al MPs is reduced by the addition of WO3 NPs.
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81.07.Bc Nanocrystalline materials
82.33.Vx Reactions in flames, combustion, and explosions

Axial strain in GaAs/InAs core-shell nanowires

Andreas Biermanns, Torsten Rieger, Genziana Bussone, Ullrich Pietsch, Detlev Grützmacher, and Mihail Ion Lepsa

Appl. Phys. Lett. 102, 043109 (2013); http://dx.doi.org/10.1063/1.4790185 (4 pages)

Online Publication Date: 30 January 2013

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We study the axial strain relaxation in GaAs/InAs core-shell nanowire heterostructures grown by molecular beam epitaxy. Besides a gradual strain relaxation of the shell material, we find a significant strain in the GaAs core, increasing with shell thickness. This strain is explained by a saturation of the dislocation density at the core-shell interface. Independent measurements of core and shell lattice parameters by x-ray diffraction reveal a relaxation of 93% in a 35 nm thick InAs shell surrounding cores of 80 nm diameter. The compressive strain of −0.5% compared to bulk InAs is accompanied by a tensile strain up to 0.9% in the GaAs core.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.40.Lm Deformation, plasticity, and creep
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
62.20.F- Deformation and plasticity
81.07.Gf Nanowires

Blue shift of plasmonic resonance induced by nanometer scale anisotropy of chemically synthesized gold nanospheres

Ryoko Watanabe-Tamaki, Atsushi Ishikawa, and Takuo Tanaka

Appl. Phys. Lett. 102, 043110 (2013); http://dx.doi.org/10.1063/1.4790291 (4 pages)

Online Publication Date: 30 January 2013

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Anisotropic plasmonic responses on oblate spheroidal shape were investigated using chemically synthesized gold nanospheres. By employing the polarized transmission spectroscopy with oblique incidence, we observe 12-nm blue shift of the plasmonic resonant wavelength for gold nanospheres. The gold nanospheres with 3-nm deformation exhibited anisotropy by adsorbing on a substrate surface, resulting in the blue shift of plasmon resonant wavelength. The good agreement in measured and simulated transmission spectra leads to a precise design of gold nanospheres for plasmonic applications.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
68.43.Mn Adsorption kinetics
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys

Damage and strain in single-layer graphene induced by very-low-energy electron-beam irradiation

Katsuhisa Murakami, Takuya Kadowaki, and Jun-ichi Fujita

Appl. Phys. Lett. 102, 043111 (2013); http://dx.doi.org/10.1063/1.4790388 (4 pages)

Online Publication Date: 30 January 2013

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From the analysis of the ratio of D peak intensity to G peak intensity in Raman spectroscopy, electron beam irradiation with energies of 100 eV was found to induce damage in single-layer graphene. The damage becomes larger with decreasing electron beam energy. Internal strain in graphene induced by damage under irradiation is further evaluated based on G peak shifts. The dose-dependent internal strain was approximately 2.22% cm2/mC at 100 eV and 2.65 × 10−2% cm2/mC at 500 eV. The strain induced by the irradiation showed strong dependence on electron energy.
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61.80.Fe Electron and positron radiation effects
61.82.-d Radiation effects on specific materials
78.30.Na Fullerenes and related materials
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
78.67.Wj Optical properties of graphene

Tunable nanowire Wheatstone bridge for improved sensitivity in molecular recognition

Carsten Maedler, Shyamsunder Erramilli, L. J. House, M. K. Hong, and Pritiraj Mohanty

Appl. Phys. Lett. 102, 043112 (2013); http://dx.doi.org/10.1063/1.4789994 (4 pages)

Online Publication Date: 30 January 2013

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Poor signal-to-noise ratio (SNR) is a strong limiting factor on the performance of nanowire field-effect transistor based sensing of molecules. Using an advanced measurement configuration such as a Wheatstone bridge, electrical noise, drift due to fluid dynamics, thermal fluctuations, and chemical changes of the gate oxide can be drastically reduced. Here, a miniature Wheatstone bridge has been lithographically fabricated. All four arms consist of silicon nanowires, while two of the arms are tunable by top gate electrodes to enable balancing of the bridge. We have studied the performance of the bridge for pH detection. The signal-to-noise ratio is significantly enhanced in the balanced configuration, which also helps to reduce overall drift.
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85.30.Tv Field effect devices
81.16.Nd Micro- and nanolithography

Quantum spin Hall effect induced by electric field in silicene

Xing-Tao An, Yan-Yang Zhang, Jian-Jun Liu, and Shu-Shen Li

Appl. Phys. Lett. 102, 043113 (2013); http://dx.doi.org/10.1063/1.4790147 (4 pages)

Online Publication Date: 31 January 2013

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We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric field due to the buckled structure of the silicene. A bulk gap is opened by the staggered potential and gapless edge states appear in the gap by tuning the two kinds of Rashba spin-orbit couplings properly. Furthermore, the gapless edge states are spin-filtered and are insensitive to the non-magnetic disorder. These results prove that the quantum spin Hall effect can be induced by an external electric field in silicene, which may have certain practical significance in applications for future spintronics device.
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73.43.Cd Theory and modeling
73.63.-b Electronic transport in nanoscale materials and structures
71.20.Mq Elemental semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.22.-f Electronic structure of nanoscale materials and related systems

Graphene nanoribbon based negative resistance device for ultra-low voltage digital logic applications

Yasin Khatami, Jiahao Kang, and Kaustav Banerjee

Appl. Phys. Lett. 102, 043114 (2013); http://dx.doi.org/10.1063/1.4788684 (5 pages)

Online Publication Date: 31 January 2013

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Negative resistance devices offer opportunities in design of compact and fast analog and digital circuits. However, their implementation in logic applications has been limited due to their small ON current to OFF current ratios (peak to valley ratio). In this paper, a design for a 2-port negative resistance device based on arm-chair graphene nanoribbon is presented. The proposed structure takes advantage of electrostatic doping, and offers high ON current (∼700 μA/μm) as well as ON current to OFF current ratio of more than 105. The effects of several design parameters such as doping profile, gate workfunction, bandgap, and hetero-interface characteristics are investigated to improve the performance of the proposed devices. The proposed device offers high flexibility in terms of the design and optimization, and is suitable for digital logic applications. A complementary logic is developed based on the proposed device, which can be operated down to 200 mV of supply voltage. The complementary logic is used in design of an ultra-compact bi-stable switching static memory cell. Due to its compactness and high drive current, the proposed memory cell can outperform the conventional static random access memory cells in terms of switching speed and power consumption.
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84.30.Sk Pulse and digital circuits
85.30.De Semiconductor-device characterization, design, and modeling
85.40.Ry Impurity doping, diffusion and ion implantation technology
81.05.ue Graphene
81.07.Bc Nanocrystalline materials
84.30.Jc Power electronics; power supply circuits

Electron transport in InAs-InAlAs core-shell nanowires

Gregory W. Holloway, Yipu Song, Chris M. Haapamaki, Ray R. LaPierre, and Jonathan Baugh

Appl. Phys. Lett. 102, 043115 (2013); http://dx.doi.org/10.1063/1.4788742 (5 pages) | Cited 1 time

Online Publication Date: 31 January 2013

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Evidence is given for the effectiveness of InAs surface passivation by the growth of an epitaxial In0.8Al0.2As shell. The electron mobility is measured as a function of temperature for both core-shell and unpassivated nanowires, with the core-shell nanowires showing a monotonic increase in mobility as temperature is lowered, in contrast to a turnover in mobility seen for the unpassivated nanowires. We argue that this signifies a reduction in low temperature ionized impurity scattering for the passivated nanowires, implying a reduction in surface states.
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73.63.Nm Quantum wires
81.05.Ea III-V semiconductors
81.65.Rv Passivation
68.55.ag Semiconductors
81.07.Gf Nanowires
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

Comparative study of chemically synthesized and exfoliated multilayer MoS2 field-effect transistors

Wan Sik Hwang, Maja Remskar, Rusen Yan, Tom Kosel, Jong Kyung Park, Byung Jin Cho, Wilfried Haensch, Huili (Grace) Xing, Alan Seabaugh, and Debdeep Jena

Appl. Phys. Lett. 102, 043116 (2013); http://dx.doi.org/10.1063/1.4789975 (3 pages)

Online Publication Date: 31 January 2013

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We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however, flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.
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85.30.Tv Field effect devices
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