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28 Jan 2013

Volume 102, Issue 4, Articles (04xxxx)

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Appl. Phys. Lett. 102, 041101 (2013); http://dx.doi.org/10.1063/1.4777564 (5 pages)

K. Winkler, C. Schneider, J. Fischer, A. Rahimi-Iman, M. Amthor, A. Forchel, S. Reitzenstein, S. Höfling, and M. Kamp
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Dual threshold diode based on the superconductor-to-insulator transition in ultrathin TiN films

Tatyana I. Baturina, David Kalok, Ante Bilušić, Valerii M. Vinokur, Mikhail R. Baklanov, Anton K. Gutakovskii, Alexander V. Latyshev, and Christoph Strunk

Appl. Phys. Lett. 102, 042601 (2013); http://dx.doi.org/10.1063/1.4789510 (5 pages)

Online Publication Date: 29 January 2013

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We investigate transport properties of superconducting TiN films in the vicinity of the superconductor-insulator transition (SIT). We show that the current-voltage (I-V) characteristics are mirror-symmetric with respect to the SIT and can be switched to each other by the applied magnetic field. In both superconducting and insulating states, the low-temperature I-V characteristics have pronounced diode-like threshold character, demonstrating voltage/current jumps over several orders of magnitude at the corresponding critical current or threshold voltage. We have found that for both states, the theory developed for Josephson junction arrays offers a quantitative description of the experimental results.
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85.25.Cp Josephson devices
84.47.+w Vacuum tubes
85.25.Am Superconducting device characterization, design, and modeling
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