APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

28 Jan 2013

Volume 102, Issue 4, Articles (04xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 041101 (2013); http://dx.doi.org/10.1063/1.4777564 (5 pages)

K. Winkler, C. Schneider, J. Fischer, A. Rahimi-Iman, M. Amthor, A. Forchel, S. Reitzenstein, S. Höfling, and M. Kamp
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Volmer-Weber growth of AlSb on Si(111)

A. Proessdorf, M. Hanke, B. Jenichen, W. Braun, and H. Riechert

Appl. Phys. Lett. 102, 041601 (2013); http://dx.doi.org/10.1063/1.4789536 (4 pages)

Online Publication Date: 28 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
AlSb is grown by molecular beam epitaxy. The evolution and the relaxation of the deposited AlSb layer is investigated by synchrotron-based in situ grazing incidence x-ray diffraction (GID), and the analysis of the real space distribution is performed by atomic force microscopy. AlSb forms islands with (111)A polarity and {110} surface orientations with different side facets following the Volmer-Weber growth mode. GID investigations reveal facet rods originating from AlSb{110} islands. It is shown that a concentration of only 0.7% AlSb{110} oriented domains influences the diffraction pattern in such a way that additional crystal truncation rods parallel to the surface appear.
Show PACS
68.55.ag Semiconductors
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)

Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids

Josef W. Spalenka, Padma Gopalan, Howard E. Katz, and Paul G. Evans

Appl. Phys. Lett. 102, 041602 (2013); http://dx.doi.org/10.1063/1.4790155 (5 pages)

Online Publication Date: 29 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Modifying the surface of polycrystalline ZnO films using a monolayer of organic molecules with carboxylic acid attachment groups increases the field-effect electron mobility and zero-bias conductivity, resulting in improved transistors and transparent conductors. The improvement is consistent with the passivation of defects via covalent bonding of the carboxylic acid and is reversible by exposure to a UV-ozone lamp. The properties of the solvent used for the attachment are crucial because solvents with high acid dissociation constants (Ka) for carboxylic acids lead to high proton activities and etching of the nanometers-thick ZnO films, masking the electronic effect.
Show PACS
72.20.Fr Low-field transport and mobility; piezoresistance
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.65.Cf Surface cleaning, etching, patterning
81.65.Rv Passivation
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
68.35.bg Semiconductors

A possible origin of core-level shift in SiO2/Si stacks

Xiaolei Wang, Jinjuan Xiang, Wenwu Wang, Jing Zhang, Kai Han, Hong Yang, Xueli Ma, Chao Zhao, Dapeng Chen, and Tianchun Ye

Appl. Phys. Lett. 102, 041603 (2013); http://dx.doi.org/10.1063/1.4790157 (5 pages)

Online Publication Date: 30 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Band alignments of SiO2/Si stacks with different SiO2 thicknesses are re-examined by X-ray photoelectron spectroscopy (XPS) and X-ray Auger electron spectroscopy. The energy difference between core-levels of SiO2 and Si is found to decrease with thicker SiO2. A possible explanation based on surface gap states (SGS) and charge neutrality level (CNL) is proposed to elucidate band alignment of SiO2/Si. Due to lower CNL of SiO2 SGS than Fermi level of Si, electrons transfer from Si to SiO2 SGS. With thicker SiO2 fewer electrons transfer from Si to SiO2, resulting in larger potential drop across SiO2 and XPS results.
Show PACS
79.60.Jv Interfaces; heterostructures; nanostructures
79.20.Fv Electron impact: Auger emission

Surface waves on floating liquids induced by ultrasound field

D. L. Geng, W. J. Xie, N. Yan, and B. Wei

Appl. Phys. Lett. 102, 041604 (2013); http://dx.doi.org/10.1063/1.4790386 (4 pages)

Online Publication Date: 31 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate a kind of wave pattern on the surface of floating liquids in a modulated ultrasound field. The waves are related to the liquid/solid phase transformation process. The nucleation sites of the eutectics locate at the center of these waves, and the eutectic growth direction is parallel to the propagation direction of the waves. It is revealed that such wave phenomenon can be ascribed to the interaction between ultrasound and eutectic growth at the liquid/solid interface. This result may provide a potential method for fabricating wave patterned surfaces on eutectic alloys.
Show PACS
68.08.-p Liquid-solid interfaces
64.60.qj Studies of nucleation in specific substances
47.35.-i Hydrodynamic waves
62.60.+v Acoustical properties of liquids

The role height plays in the spreading of liquid droplets over sharp edges

Jochen Mueller, Negin Haghparastmojaveri, Tuncay Alan, and Adrian Neild

Appl. Phys. Lett. 102, 041605 (2013); http://dx.doi.org/10.1063/1.4789990 (5 pages)

Online Publication Date: 31 January 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We show that the volume which can be held on the top of a pillar is dependent on the elevation of the pillar. When a spreading fluid encounters an edge between two inclined surfaces, the angle between them determines the hysteresis at the edge. To examine the changes in the hysteresis as a function of pillar height, circular pillars of various heights ranging from 31.8 μm down to 200 nm were fabricated in silicon. It was found that as the height is reduced below 7.2 μm there is a marked and almost linear decline in the hysteresis offered by the pillar edge.
Show PACS
68.08.Bc Wetting
47.55.D- Drops and bubbles
68.03.Cd Surface tension and related phenomena
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close