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4 Feb 2013

Volume 102, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 102, 053102 (2013); http://dx.doi.org/10.1063/1.4789442 (5 pages)

P. H. Kim, C. Doolin, B. D. Hauer, A. J. R. MacDonald, M. R. Freeman, P. E. Barclay, and J. P. Davis
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Introducing a well-ordered volume porosity in 3-dimensional gold microcantilevers

Cédric Ayela, Hélène Lalo, and Alexander Kuhn

Appl. Phys. Lett. 102, 053501 (2013); http://dx.doi.org/10.1063/1.4790396 (3 pages)

Online Publication Date: 4 February 2013

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The purpose of the present work is the introduction of a combined bottom-up and top-down approach to generate 3-dimensional gold microcantilevers, where the porosity in the volume of the free-standing microstructure is well-controlled. By combining the elaboration of a colloidal crystal, followed by electrodeposition, with a sacrificial layer process, free-standing macroporous gold cantilevers are fabricated collectively. In order to validate the proposed concept, a simple application to humidity sensing is evaluated using the devices as mass sensors. A large sensitivity of −529 ppm/%RH and low discrepancy are obtained experimentally, confirming the promising application potential of this original architecture.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

Jun Sun, Qi Liu, Hongwei Xie, Xing Wu, Feng Xu, Tao Xu, Shibing Long, Hangbing Lv, Yingtao Li, Litao Sun, and Ming Liu

Appl. Phys. Lett. 102, 053502 (2013); http://dx.doi.org/10.1063/1.4790837 (4 pages) | Cited 1 time

Online Publication Date: 5 February 2013

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In this letter, we dynamically investigate the resistive switching characteristics and physical mechanism of the Ni/ZrO2/Pt device. The device shows stable bipolar resistive switching behaviors after forming process, which is similar to the Ag/ZrO2/Pt and Cu/ZrO2/Pt devices. Using in situ transmission electron microscopy, we observe in real time that several conductive filaments are formed across the ZrO2 layer between Ni and Pt electrodes after forming. Energy-dispersive X-ray spectroscopy results confirm that Ni is the main composition of the conductive filaments. The ON-state resistance increases with increasing temperature, exhibiting the feature of metallic conduction. In addition, the calculated resistance temperature coefficient is equal to that of the 10–30 nm diameter Ni nanowire, further indicating that the nanoscale Ni conductive bridge is the physical origin of the observed conductive filaments. The resistive switching characteristics and the conductive filament's component of Ni/ZrO2/Pt device are consistent with the characteristics of the typical solid-electrolyte-based resistive random access memory. Therefore, aside from Cu and Ag, Ni can also be used as an oxidizable electrode material for resistive random access memory applications.
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84.30.Sk Pulse and digital circuits
66.30.H- Self-diffusion and ionic conduction in nonmetals
82.45.Fk Electrodes
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

High-brightness tapered quantum cascade lasers

Burç Gökden, Tobias S. Mansuripur, Romain Blanchard, Christine Wang, Anish Goyal, Antonio Sanchez-Rubio, George Turner, and Federico Capasso

Appl. Phys. Lett. 102, 053503 (2013); http://dx.doi.org/10.1063/1.4791557 (4 pages) | Cited 2 times

Online Publication Date: 5 February 2013

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An index-guided tapered quantum cascade laser emitting near 9.5 μm with sloped sidewalls and no anti-reflection coating is presented, and the performance for devices with taper half-angles of 1° and 2° is investigated. The 1° device delivers up to 2.5 W of peak optical power at room temperature with beam quality-factor M2 = 2.08, while the two-degree device outputs 3.8 W with M2 = 2.25 for a maximum brightness of 1.87 MW cm−2 sr−1.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Wc Optical coatings

Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal

Woong-Ki Hong, Jung Inn Sohn, SeungNam Cha, Jong Min Kim, Jong-Bae Park, Su Seok Choi, Harry J. Coles, and Mark E. Welland

Appl. Phys. Lett. 102, 053504 (2013); http://dx.doi.org/10.1063/1.4791561 (4 pages)

Online Publication Date: 6 February 2013

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We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits

A programmable ferroelectric single electron transistor

Lu Liu, Vijay Narayanan, and Suman Datta

Appl. Phys. Lett. 102, 053505 (2013); http://dx.doi.org/10.1063/1.4791601 (4 pages)

Online Publication Date: 6 February 2013

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We experimentally demonstrate a programmable ferroelectric single electron transistor using direct monolithic integration of a multi-gate III-V (In0.7Ga0.3As) quantum well field effect transistor with a composite ferroelectric (lead zirconium titanate) and high-k (hafnium dioxide) gate stack. A split gate electrode configuration allows electrical tuning of the tunnel barrier profile and reconfigurable programming of the device to operate in both classical and Coulomb blockade mode. The ferroelectric gate stack under the split gate electrode further allows non-volatile operation in both modes. This demonstration is a significant step towards realization of a non-volatile, programmable binary decision diagram logic circuit for ultra low power operation.
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85.35.Gv Single electron devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.30.Tv Field effect devices
85.35.Ds Quantum interference devices

Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect

Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita, Yasuaki Ishikawa, and Yukiharu Uraoka

Appl. Phys. Lett. 102, 053506 (2013); http://dx.doi.org/10.1063/1.4790619 (4 pages)

Online Publication Date: 6 February 2013

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Stability is the most crucial issue in the fabrication of oxide thin-film transistors (TFTs) for next-generation displays. We have investigated the thermal distribution of an InSnZnO TFT under various gate and drain voltages by using an infrared imaging system. An asymmetrical thermal distribution was observed at a local drain region in a TFT depending on bias stress. These phenomena were decelerated or accelerated with stress time. We discussed the degradation mechanism by analyzing the electrical properties and thermal distribution. We concluded that the degradation phenomena are caused by a combination of Joule heating and the hot carrier effect.
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85.30.Tv Field effect devices
73.50.Fq High-field and nonlinear effects

Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

A. I. Abutaha, S. R. Sarath Kumar, and H. N. Alshareef

Appl. Phys. Lett. 102, 053507 (2013); http://dx.doi.org/10.1063/1.4790644 (5 pages)

Online Publication Date: 6 February 2013

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We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.
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73.50.Lw Thermoelectric effects
68.55.ag Semiconductors
72.20.Pa Thermoelectric and thermomagnetic effects

Temperature dependent reversal of voltage modulated light emission and negative capacitance in AlGaInP based multi quantum well light emitting devices

Kanika Bansal and Shouvik Datta

Appl. Phys. Lett. 102, 053508 (2013); http://dx.doi.org/10.1063/1.4790609 (4 pages)

Online Publication Date: 7 February 2013

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We report a reversal in negative capacitance (NC) and voltage modulated light emission from AlGaInP based multi-quantum well (QW) electroluminescent diodes under temperature variation. Unlike monotonically increasing continuous wave light emission with decreasing temperature, modulated electroluminescence and negative capacitance first increase to a maximum and then decrease while cooling down from room temperature. Interdependence of such electronic and optical properties is understood as a competition between defect participation in radiative recombination and field assisted carrier escape from the quantum well region during temperature variation. The temperature of maximum light emission must coincide with the operating temperature of a device for better efficiency.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Relationship between the cell thickness and the optimum period of textured back reflectors in thin-film microcrystalline silicon solar cells

Hitoshi Sai (齋 均), Kimihiko Saito (齊藤 公彦), Nana Hozuki (保月なな), and Michio Kondo (近藤 道雄)

Appl. Phys. Lett. 102, 053509 (2013); http://dx.doi.org/10.1063/1.4790642 (5 pages) | Cited 2 times

Online Publication Date: 8 February 2013

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Periodically textured back reflectors with hexagonal dimple arrays are applied to thin-film microcrystalline silicon (μc-Si:H) solar cells. When the textures have a moderate aspect ratio, the optimum period for obtaining a high short circuit current density (JSC) is found to be equal to or slightly larger than the cell thickness. If the cell thickness exceeds the texture period, the cell surface tends to be flattened and texture-induced defects are generated, which constrain the improvement in JSC. Based on these findings, we have fabricated optimized μc-Si:H cells achieving a high efficiency exceeding 10% and a JSC of 30 mA/cm2.
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88.40.jj Silicon solar cells
88.40.hj Efficiency and performance of solar cells
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