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4 Feb 2013

Volume 102, Issue 5, Articles (05xxxx)

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Appl. Phys. Lett. 102, 053102 (2013); http://dx.doi.org/10.1063/1.4789442 (5 pages)

P. H. Kim, C. Doolin, B. D. Hauer, A. J. R. MacDonald, M. R. Freeman, P. E. Barclay, and J. P. Davis
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Mechanic and electromechanic effects in biaxially stretched liquid crystal elastomers

Ricardo Diaz-Calleja, Pedro Llovera-Segovia, Evaristo Riande, and Alfredo Quijano López

Appl. Phys. Lett. 102, 052901 (2013); http://dx.doi.org/10.1063/1.4790154 (4 pages)

Online Publication Date: 4 February 2013

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The effect of combined electromechanic force fields in nematic side chain liquid crystal elastomers will be analyzed. A biaxially stretched plate in the x- and y-directions under an electric field applied in the perpendicular direction to the plate will be considered. A neo-Hookean model is chosen, which implies Gaussian behaviour. Results are obtained for both a soft and semisoft case showing the effect of the electric field on the rotation of the director and the free energy density function.
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61.30.Vx Polymer liquid crystals
61.41.+e Polymers, elastomers, and plastics
77.84.Jd Polymers; organic compounds
77.84.Nh Liquids, emulsions, and suspensions; liquid crystals
62.20.D- Elasticity
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order

A high-temperature piezoelectric linear actuator operating in two orthogonal first bending modes

Jianguo Chen, Zhijiang Chen, Xiaotian Li, and Shuxiang Dong

Appl. Phys. Lett. 102, 052902 (2013); http://dx.doi.org/10.1063/1.4790278 (5 pages)

Online Publication Date: 4 February 2013

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Conventionally, piezoelectric ultrasonic linear actuators operate in longitudinal and bending combination (degenerate) modes for producing an elliptic motion which drives a slider moving linearly. With the increasing temperature, the degenerate mode will split into two separated modes again, resulting in piezoelectric actuators working to fail. Here, we report a miniature piezoelectric ultrasonic linear actuator made of Mn modified (1−x)BiScO3–xPbTiO3 piezoelectric ceramics operating in two orthogonal first bending modes (B1-B1). The B1-B1 mode linear actuator showed much better load and speed temperature stability than piezoelectric actuators operating in different combination mode in the investigated temperature range of room temperature to 200 °C.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

Confirmation of the monoclinic Cc space group for the ground state phase of Pb(Zr0.525Ti0.475)O3: A combined synchrotron X-ray and neutron powder diffraction study

Ravindra Singh Solanki, Sunil Kumar Mishra, Anatoliy Senyshyn, Songhak Yoon, Sunggi Baik, Namsoo Shin, and Dhananjai Pandey

Appl. Phys. Lett. 102, 052903 (2013); http://dx.doi.org/10.1063/1.4790569 (5 pages)

Online Publication Date: 4 February 2013

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The low temperature antiferrodistortive phase transition in a pseudo-tetragonal composition of Pb(ZrxTi1-x)O3 (PZT) with x = 0.525 is investigated through a combined synchrotron x-ray and neutron powder diffraction study. It is shown that the superlattice peaks cannot be correctly accounted for in the Rietveld refinement using R3c or R3c + Cm structural models, whereas the Cc space group gives excellent fits to the superlattice peaks as well as to the perovskite peaks. This settles at rest the existing controversies about the structure of the ground state phase of PZT in the morphotropic phase boundary region.
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61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
71.10.Hf Non-Fermi-liquid ground states, electron phase diagrams and phase transitions in model systems

A giant polarization value of Zn and Mn co-modified bismuth ferrite thin films

Jiagang Wu, Sha Qiao, John Wang, Dingquan Xiao, and Jianguo Zhu

Appl. Phys. Lett. 102, 052904 (2013); http://dx.doi.org/10.1063/1.4790380 (3 pages) | Cited 1 time

Online Publication Date: 5 February 2013

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A giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn0.02)O3 (BFMZO) thin films were prepared on SrRuO3-buffered silicon substrates by the radio-frequency sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2Pr ∼ 235 μC/cm2 and 2Ec ∼ 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films.
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77.22.Ej Polarization and depolarization
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Cd Deposition by sputtering
68.55.aj Insulators
77.84.Cg PZT ceramics and other titanates
77.55.fp Other ferroelectric films

Tungsten oxide proton conducting films for low-voltage transparent oxide-based thin-film transistors

Hongliang Zhang, Qing Wan, Changjin Wan, Guodong Wu, and Liqiang Zhu

Appl. Phys. Lett. 102, 052905 (2013); http://dx.doi.org/10.1063/1.4791673 (4 pages)

Online Publication Date: 6 February 2013

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Tungsten oxide (WOx) electrolyte films deposited by reactive magnetron sputtering showed a high room temperature proton conductivity of 1.38 × 10−4 S/cm with a relative humidity of 60%. Low-voltage transparent W-doped indium-zinc-oxide thin-film transistors gated by WOx-based electrolytes were self-assembled on glass substrates by one mask diffraction method. Enhancement mode operation with a large current on/off ratio of 4.7 × 106, a low subthreshold swing of 108 mV/decade, and a high field-effect mobility 42.6 cm2/V s was realized. Our results demonstrated that WOx-based proton conducting films were promising gate dielectric candidates for portable low-voltage oxide-based devices.
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85.30.Tv Field effect devices
81.15.Cd Deposition by sputtering
81.16.Dn Self-assembly

Extension of thickness-dependent dielectric breakdown law on adiabatically compressed ferroelectric materials

Sergey I. Shkuratov, Jason Baird, and Evgueni F. Talantsev

Appl. Phys. Lett. 102, 052906 (2013); http://dx.doi.org/10.1063/1.4791597 (5 pages)

Online Publication Date: 8 February 2013

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It is experimentally found that the Eb(d) = γ · d−ξ law describing the thickness-dependent breakdown electric field for solid dielectrics at ambient conditions can be extended for dielectrics in other thermodynamic states. It follows from the experimental results reported herein that the breakdown field, Eb(d), of Pb(Zr0.95Ti0.05)O3 (PZT 95/5) and Pb(Zr0.52Ti0.48)O3 (PZT 52/48) ferroelectrics subjected to explosive adiabatic compression obeys the above-mentioned law in a wide range of voltages, up to 150 kV.
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77.22.Jp Dielectric breakdown and space-charge effects
77.80.-e Ferroelectricity and antiferroelectricity
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
77.84.Cg PZT ceramics and other titanates

Giant self-biased magnetoelectric coupling in co-fired textured layered composites

Yongke Yan, Yuan Zhou, and Shashank Priya

Appl. Phys. Lett. 102, 052907 (2013); http://dx.doi.org/10.1063/1.4791685 (5 pages) | Cited 1 time

Online Publication Date: 8 February 2013

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Co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was synthesized and characterized. We demonstrate integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure to achieve strong magnetoelectric coupling. Using the co-fired composite, a strategy was developed based upon the hysteretic response of nickel-copper-zinc ferrite magnetostrictive materials to achieve peak magnetoelectric response at zero DC bias, referred as self-biased magnetoelectric response. Fundamental understanding of self-bias phenomenon in composites with single phase magnetic material was investigated by quantifying the magnetization and piezomagnetic changes with applied DC field. We delineate the contribution arising from the interfacial strain and inherent magnetic hysteretic behavior of copper modified nickel-zinc ferrite towards self-bias response.
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75.80.+q Magnetomechanical effects, magnetostriction
77.65.-j Piezoelectricity and electromechanical effects
75.85.+t Magnetoelectric effects, multiferroics
77.84.Cg PZT ceramics and other titanates
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Nanoscale electroresistance properties of all-oxide magneto-electric tunnel junction with ultra-thin barium titanate barrier

G. Kim, D. Mazumdar, and A. Gupta

Appl. Phys. Lett. 102, 052908 (2013); http://dx.doi.org/10.1063/1.4791699 (4 pages) | Cited 1 time

Online Publication Date: 8 February 2013

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Tunnel electroresistance properties have been investigated at the nanoscale for prototype magneto-electric tunnel junctions (METJ) consisting of ferroelectric BaTiO3 and ferromagnetic La0.67Sr0.33MnO3 heterostructures. Combining piezoresponse force and conductive atomic force microscopy, we demonstrate robust and reproducible polarization-dependent tunneling behavior with a resistance ratio between the two polarization states as high as 60 for a 3 unit cell (∼1.2 nm) BaTiO3 tunnel barrier. Our work demonstrates that METJs are scalable down to barrier layer thicknesses comparable to commercial spintronic devices.
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85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
75.85.+t Magnetoelectric effects, multiferroics
75.50.Dd Nonmetallic ferromagnetic materials
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
77.65.-j Piezoelectricity and electromechanical effects
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