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4 Feb 2013

Volume 102, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 053102 (2013); http://dx.doi.org/10.1063/1.4789442 (5 pages)

P. H. Kim, C. Doolin, B. D. Hauer, A. J. R. MacDonald, M. R. Freeman, P. E. Barclay, and J. P. Davis
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Effect of substrate surface roughness on electric current induced flow of liquid metals

Santanu Talukder, Nalla Somaiah, and Praveen Kumar

Appl. Phys. Lett. 102, 054101 (2013); http://dx.doi.org/10.1063/1.4790182 (4 pages)

Online Publication Date: 4 February 2013

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Electric current can induce long-range flow of liquid metals over a conducting substrate. This work reports on the effect of the substrate surface roughness on the liquid metal-front velocity during such a flow. Experiments were conducted by passing electric current through liquid gallium placed over ∼170 nm thick, 500 μm wide gold and platinum films of varying roughness. The ensuing flow, thus, resembles micro-fluidics behavior in an open-channel. The liquid-front velocity decreased linearly with the substrate surface roughness; this is attributed to the reduction in the effective electric field along the liquid metal-substrate interface with the substrate surface roughness.
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68.35.bd Metals and alloys
61.25.Mv Liquid metals and alloys

Femtosecond diffraction dynamics of laser-induced periodic surface structures on fused silica

S. Höhm, A. Rosenfeld, J. Krüger, and J. Bonse

Appl. Phys. Lett. 102, 054102 (2013); http://dx.doi.org/10.1063/1.4790284 (4 pages)

Online Publication Date: 4 February 2013

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The formation of laser-induced periodic surface structures (LIPSS) on fused silica upon irradiation with linearly polarized fs-laser pulses (50 fs pulse duration, 800 nm center wavelength) is studied experimentally using a transillumination femtosecond time-resolved (0.1 ps-1 ns) pump-probe diffraction approach. This allows to reveal the generation dynamics of near-wavelength-sized LIPSS showing a transient diffraction at specific spatial frequencies even before a corresponding permanent surface relief was observed. The results confirm that the ultrafast energy deposition to the materials surface plays a key role and triggers subsequent physical mechanisms such as carrier scattering into self-trapped excitons.
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68.35.bt Other materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
79.20.Ds Laser-beam impact phenomena

Spatially and frequency-resolved monitoring of intradie capacitive coupling by heterodyne excitation infrared lock-in thermography

J. León, X. Perpiñà, J. Altet, M. Vellvehi, and X. Jordà

Appl. Phys. Lett. 102, 054103 (2013); http://dx.doi.org/10.1063/1.4790299 (5 pages) | Cited 1 time

Online Publication Date: 5 February 2013

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This paper combines the infrared lock-in thermography (IR-LIT) and heterodyne excitation techniques to detect high-frequency capacitive currents due to intradie electrical coupling between microelectronic devices or more complex systems. Modulating the excitation with the heterodyne approach, we drive devices or complex systems with high frequency electrical signals in such a way that they behave as low frequency heat sources, modulating their temperature field at a frequency detectable by an IR-LIT system. This approach is analytically studied and extended to a bi-dimensional scenario, showing that the thermal information at low frequency depends on the electrical characteristics of the sample at high frequency.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Pw Imaging detectors and sensors
84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

Remedying magnetic hysteresis and 1/f noise for magnetoresistive sensors

Jiafei Hu, Wugang Tian, Jianqiang Zhao, Mengchun Pan, Dixiang Chen, and Guiyun Tian

Appl. Phys. Lett. 102, 054104 (2013); http://dx.doi.org/10.1063/1.4790606 (4 pages)

Online Publication Date: 5 February 2013

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Thermal domain hoppings cause magnetic hysteresis and 1/f resistance noise in magnetoresistive sensors, which largely degrades their response linearity and low-frequency detection ability. In this Letter, the method of constant magnetic excitation integrated with vertical motion flux modulation was proposed to remedy magnetic hysteresis and 1/f resistance noise together. As demonstrated in experiments, the response linearity of the prototype sensor is promoted by about 10 times. Its noise level is reduced to near Johnson-Nyquist noise level, and, therefore, the low-frequency detection ability is approximately enhanced with a factor of 100.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
73.50.Td Noise processes and phenomena
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Optoelectrofluidic behavior of metal–polymer hybrid colloidal particles

Dongsik Han, Hyundoo Hwang, and Je-Kyun Park

Appl. Phys. Lett. 102, 054105 (2013); http://dx.doi.org/10.1063/1.4790622 (4 pages)

Online Publication Date: 5 February 2013

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Behavior of metal–polymer hybrid colloidal particles in an optoelectrofluidic device has been investigated theoretically and experimentally. In the application of hundreds of kHz ac voltage, a variety of optically induced electrokinetic and electrostatic mechanisms affect the movement of gold-coated polystyrene microspheres. The particles repel from the light pattern, and their mobility increases as the amount of gold increases. We apply this model to develop an optoelectrofluidic immunoassay, in which the corresponding metal–polymer hybrid particles are formed by a reaction of antibody-coated gold nanoparticles, antigens, and antibody-coated polystyrene microspheres.
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07.10.Cm Micromechanical devices and systems
47.57.jd Electrokinetic effects
82.70.Dd Colloids
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Transparent ion trap with integrated photodetector

Amira M. Eltony, Shannon X. Wang, Gleb M. Akselrod, Peter F. Herskind, and Isaac L. Chuang

Appl. Phys. Lett. 102, 054106 (2013); http://dx.doi.org/10.1063/1.4790843 (3 pages)

Online Publication Date: 7 February 2013

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Fluorescence collection sets the efficiency of state detection and the rate of entanglement generation between remote trapped ion qubits. Despite efforts to improve light collection using various optical elements, solid angle capture is limited to ≈ 10% for implementations that are scalable to many ions. We present an approach based on fluorescence detection through a transparent trap using an integrated photodetector, combining collection efficiency approaching 50% with scalability. We microfabricate transparent surface traps with indium tin oxide and verify stable trapping of single ions. The fluorescence from a cloud of ions is detected using a photodiode sandwiched with a transparent trap.
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42.82.-m Integrated optics
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.50.Wk Mechanical effects of light on material media, microstructures and particles
42.50.Dv Quantum state engineering and measurements

Low temperature direct wafer bonding of GaAs to Si via plasma activation

C. Y. Yeo, D. W. Xu, S. F. Yoon, and E. A. Fitzgerald

Appl. Phys. Lett. 102, 054107 (2013); http://dx.doi.org/10.1063/1.4791584 (4 pages)

Online Publication Date: 7 February 2013

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The present work seeks to demonstrate the elegance and simplicity of monolithic integration via plasma-activated direct wafer bonding. Two-inch gallium arsenide and silicon wafers were directly bonded through argon plasma activation. The highest specific bond energy was found for plasma conditions of 30 s, 120 mTorr, and 200 W, followed by low temperature annealing at 140 °C, and was 478 mJ/m2. Through this process, a processed silicon integrated circuit could be integrated with optoelectronics gallium arsenide on a wafer scale.
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85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
52.77.-j Plasma applications

Ultra-broadband simultaneous superluminal phase and group velocities in non-Foster epsilon-near-zero metamaterial

Silvio Hrabar, Igor Krois, Ivan Bonic, and Aleksandar Kiricenko

Appl. Phys. Lett. 102, 054108 (2013); http://dx.doi.org/10.1063/1.4790297 (5 pages)

Online Publication Date: 7 February 2013

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Experimental investigation of ultra-broadband simultaneous superluminal phase and group velocity in recently introduced epsilon-near-zero (ENZ) non-Foster metamaterial is reported. The phase and group velocities were extracted both from the measurements of scattering parameters in the frequency domain and the measurements of propagation time of broadband Gaussian pulse in time domain. Reported superluminal effects are extremely broadband (relative bandwidth of 180% (1:20)) and they are fundamentally different from widely reported narrowband experiments based on the anomalous dispersion. The phenomenon of simultaneous superluminal phase and group velocities may find applications in transformation electromagnetic devices and in communication systems.
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42.70.-a Optical materials

Micromachined piezoelectric microphones with in-plane directivity

Michael L. Kuntzman, Jia Gloria Lee, Nishshanka N. Hewa-Kasakarage, Donghwan Kim, and Neal A. Hall

Appl. Phys. Lett. 102, 054109 (2013); http://dx.doi.org/10.1063/1.4776687 (4 pages)

Online Publication Date: 7 February 2013

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Micromachined piezoelectric microphones with in-plane directivity are introduced. A beam rotates about center torsional pivots and is attached to piezoelectrically active end-springs. Rotation of the beam in response to sound pressure gradients produces spring deflections, which, in turn, produce an open-circuit voltage at the piezoelectric films. Prototypes are presented that contain a 20-μm-thick silicon beam and end-springs with 900-nm-thick chemical solution deposited lead zirconate titanate atop the surface of the end-springs. Acoustic directivity measurements are presented that confirm device functionality.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
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