APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Feb 2013

Volume 102, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 053102 (2013); http://dx.doi.org/10.1063/1.4789442 (5 pages)

P. H. Kim, C. Doolin, B. D. Hauer, A. J. R. MacDonald, M. R. Freeman, P. E. Barclay, and J. P. Davis
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds
FREE

Efficient electron injection from solution-processed cesium stearate interlayers in organic light-emitting diodes

G. A. H. Wetzelaer, A. Najafi, R. J. P. Kist, M. Kuik, and P. W. M. Blom

Appl. Phys. Lett. 102, 053301 (2013); http://dx.doi.org/10.1063/1.4790592 (4 pages)

Online Publication Date: 4 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electron-injection capability of solution-processed cesium stearate films in organic light-emitting diodes is investigated. Cesium stearate, which is expected to exhibit good solubility and film formation due to its long hydrocarbon chain, is synthesized using a straightforward procedure. Light-emitting diodes are fabricated using orange-, yellow-, and blue-emitting conjugated polymers, comprising a cesium stearate electron-injection layer deposited from ethanol solution. It is demonstrated that these devices perform as well as benchmark devices using vacuum-deposited barium as electron-injection layer, without loss of color purity.
Show PACS
85.60.Jb Light-emitting devices
FREE

Enhanced performance in polymer solar cells by the use of a halogenated indium tin oxide anode

Shizhao Zheng and King Y. Wong

Appl. Phys. Lett. 102, 053302 (2013); http://dx.doi.org/10.1063/1.4790624 (4 pages)

Online Publication Date: 4 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Use of a halogenated, surface-modified indium tin oxide (ITO) anode was found to enhance the photovoltaic performance of a bulk heterojunction (BHJ) polymer solar cell using poly[N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT) by as much as 29% but produced no enhancement in a BHJ device using poly(3-hexylthiophene). The position of the positive polaronic state of the polymer was found to be crucial to the enhancement. A power conversion efficiency of 6.27% for a PCDTBT-based BHJ device was achieved by using a chlorinated ITO anode without the needs of using any modifying interlayer or optical spacer at the cathode.
Show PACS
88.40.jr Organic photovoltaics
88.40.hj Efficiency and performance of solar cells
88.40.jp Multijunction solar cells
FREE

Elucidation of ambient gas effects in organic nano-floating-gate nonvolatile memory

Xiao-Jian She, Chang-Hai Liu, Jing-Yu Zhang, Xu Gao, and Sui-Dong Wang

Appl. Phys. Lett. 102, 053303 (2013); http://dx.doi.org/10.1063/1.4790186 (5 pages)

Online Publication Date: 5 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Pentacene-based organic field-effect transistor nonvolatile memories employing nano-floating-gate show high performance in vacuum, typically with field-effect mobility of 0.6 cm2/Vs, memory window of 45 V, reading ON/OFF ratio over 106, and excellent retention ability and programming/erasing endurance. The memory performance is unstable in air, which is demonstrated to result mainly from the device operation instability in O2. The O2-induced acceptor-like trap states reduce the electron supply in pentacene during programming, limiting the electron trapping into the nano-floating-gate and thus suppressing the positive threshold voltage shift. The corresponding hole trapping during erasing is not effectively influenced by the ambient gas effects.
Show PACS
84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
FREE

A trilayer architecture for polymer photoconductors

Zhiwen Jin and Jizheng Wang

Appl. Phys. Lett. 102, 053304 (2013); http://dx.doi.org/10.1063/1.4791595 (4 pages)

Online Publication Date: 7 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A trilayer architecture is designed for polymer photoconductors. In such a structure, photogenerated electrons in poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid ethyl ester (P3HT:PCBM) blend film will flow into a TiOx layer beneath and then diffuse into a underlying PCBM layer. Photogenerated holes and electrons are thus efficiently separated by the spacer TiOx, and, respectively, transport in P3HT and PCBM films, carrier recombination is thereby greatly suppressed. As a result, photocurrent of the PCBM/TiOx/P3HT:PCBM trilayer structure increases more than 200 times over that of the conventional P3HT:PCBM single layer device.
Show PACS
85.60.Bt Optoelectronic device characterization, design, and modeling
81.05.Fb Organic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ph Polymers; organic compounds
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
FREE

An efficient non-Lambertian organic light-emitting diode using imprinted submicron-size zinc oxide pillar arrays

S. W. Liu, J. X. Wang, Y. Divayana, K. Dev, S. T. Tan, H. V. Demir, and X. W. Sun

Appl. Phys. Lett. 102, 053305 (2013); http://dx.doi.org/10.1063/1.4791786 (4 pages)

Online Publication Date: 8 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report phosphorescent organic light-emitting diodes with a substantially improved light outcoupling efficiency and a wider angular distribution through applying a layer of zinc oxide periodic nanopillar arrays by pattern replication in non-wetting templates technique. The devices exhibited the peak emission intensity at an emission angle of 40° compared to 0° for reference device using bare ITO-glass. The best device showed a peak luminance efficiency of 95.5 ± 1.5 cd/A at 0° emission (external quantum efficiency—EQE of 38.5 ± 0.1%, power efficiency of 127 ± 1 lm/W), compared to that of the reference device, which has a peak luminance efficiency of 68.0 ± 1.4 cd/A (EQE of 22.0 ± 0.1%, power efficiency of 72 ± 1 lm/W).
Show PACS
85.60.Jb Light-emitting devices
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close