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4 Feb 2013

Volume 102, Issue 5, Articles (05xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 053102 (2013); http://dx.doi.org/10.1063/1.4789442 (5 pages)

P. H. Kim, C. Doolin, B. D. Hauer, A. J. R. MacDonald, M. R. Freeman, P. E. Barclay, and J. P. Davis
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NbTiN superconducting nanowire detectors for visible and telecom wavelengths single photon counting on Si3N4 photonic circuits

C. Schuck, W. H. P. Pernice, and H. X. Tang

Appl. Phys. Lett. 102, 051101 (2013); http://dx.doi.org/10.1063/1.4788931 (4 pages) | Cited 2 times

Online Publication Date: 4 February 2013

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We demonstrate niobium titanium nitride superconducting nanowires patterned on stoichiometric silicon nitride waveguides for detecting visible and infrared photons. The use of silicon nitride on insulator on silicon substrates allows us to simultaneously realize photonic circuits for visible and infrared light and integrate them with nanowire detectors directly on-chip. By implementing a traveling wave detector geometry in this material platform, we achieve efficient single photon detection for both wavelength regimes. Our detectors are an ideal match for integrated quantum optics as they provide crucial functionality on a wideband transparent waveguide material.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
85.35.-p Nanoelectronic devices
85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.50.-p Quantum optics
42.82.Et Waveguides, couplers, and arrays

Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy

E. Cicek, R. McClintock, Z. Vashaei, Y. Zhang, S. Gautier, C. Y. Cho, and M. Razeghi

Appl. Phys. Lett. 102, 051102 (2013); http://dx.doi.org/10.1063/1.4790839 (4 pages)

Online Publication Date: 5 February 2013

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We report on crack reduction for solar-blind ultraviolet detectors via the use of a reduced area epitaxy (RAE) method to regrow on patterned AlN templates. With the RAE method, a pre-deposited AlN template is patterned into isolated mesas in order to reduce the formation of cracks in the subsequently grown high Al-content AlxGa1−xN structure. By restricting the lateral dimensions of the epitaxial growth area, the biaxial strain is relaxed by the edges of the patterned squares, which resulted in ∼97% of the pixels being crack-free. After successful implementation of RAE method, we studied the optical characteristics, the external quantum efficiency, and responsivity of average pixel-sized detectors of the patterned sample increased from 38% and 86.2 mA/W to 57% and 129.4 mA/W, respectively, as the reverse bias is increased from 0 V to 5 V. Finally, we discussed the possibility of extending this approach for focal plane array, where crack-free large area material is necessary for high quality imaging.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
42.79.Pw Imaging detectors and sensors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Laser emissions from one-dimensional photonic crystal rings on silicon-dioxide

Tsan-Wen Lu, Wei-Chi Tsai, Tze-Yao Wu, and Po-Tsung Lee

Appl. Phys. Lett. 102, 051103 (2013); http://dx.doi.org/10.1063/1.4790618 (4 pages)

Online Publication Date: 5 February 2013

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In this report, we design and utilize one-dimensional photonic crystal ring resonators (1D PhCRRs) to realize InGaAsP/SiO2 hybrid lasers via adhesive bonding technique. Single-mode lasing with low threshold from the dielectric mode is observed. To further design a nanocavity with mode gap effect in 1D PhCRR results in the reduced lasing threshold and increased vertical laser emissions, owing to the reduced dielectric mode volume and the broken rotational symmetry by the nanocavity. Such hybrid lasers based on 1D PhC rings provides good geometric integration ability and new scenario for designing versatile devices in photonic integrated circuits.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Tv Photonic crystal lasers and coherent effects
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.70.Qs Photonic bandgap materials

Design and numerical optimization of an easy-to-fabricate photon-to-plasmon coupler for quantum plasmonics

Günter Kewes, Andreas W. Schell, Rico Henze, Rolf Simon Schönfeld, Sven Burger, Kurt Busch, and Oliver Benson

Appl. Phys. Lett. 102, 051104 (2013); http://dx.doi.org/10.1063/1.4790824 (4 pages)

Online Publication Date: 6 February 2013

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We design an on-chip single mode photon to surface-plasmon coupler. Our coupler consists of a tapered dielectric waveguide and a V-shaped plasmonic part. In contrast to other concepts designated to minimized-loss coupling into long-ranging waveguides, we focus on an easy-to-fabricate structure working in the visible spectral range. The air-cladded design provides full experimental access to the evanescent fields emerging from the plasmonic stripe guide. An adaptive finite element method for full three dimensional simulations is used combined with the Taguchi method for optimization, which makes our procedure extremely time-efficient and executable on standard personal computers.
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42.79.Gn Optical waveguides and couplers
42.82.Cr Fabrication techniques; lithography, pattern transfer
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
02.50.-r Probability theory, stochastic processes, and statistics
02.70.Dh Finite-element and Galerkin methods

More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−)

A. Mandal, A. Agarwal, H. Ghadi, Goma Kumari K.C., A. Basu, N. B. V. Subrahmanyam, P. Singh, and S. Chakrabarti

Appl. Phys. Lett. 102, 051105 (2013); http://dx.doi.org/10.1063/1.4791675 (3 pages) | Cited 1 time

Online Publication Date: 6 February 2013

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In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) have emerged as one of the most suitable devices for infrared detection. However, quantum dot devices suffer from lower efficiencies due to a low fill-factor (∼20%–25%) of dots. Here, we report a post-growth technique for improving the QDIP performance using low energy light ion (H−) implantation. At high bias, there is evidence of suppression in the field-assisted tunneling component of the dark current. Enhancement in peak detectivity (D*), a measure of the signal-to-noise ratio, by more than one order, from ∼109 to 2.44 × 1010 cm Hz1/2/W was obtained from the implanted devices.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid micro-ring resonators

Feng Qiu, Andrew M. Spring, Feng Yu, and Shiyoshi Yokoyama

Appl. Phys. Lett. 102, 051106 (2013); http://dx.doi.org/10.1063/1.4790440 (3 pages)

Online Publication Date: 6 February 2013

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Micro-ring resonators have been widely utilized in silicon photonics. However they often exhibit a high sensitivity to ambient temperature fluctuations. In this letter, we have demonstrated a complementary metal–oxide–semiconductor compatible athermal micro-ring resonator made from titanium dioxide (TiO2) and silicon nitride (SiNx). We have exploited the negative thermo–optic coefficient of TiO2 to counterbalance the positive coefficient of SiNx. By a precise control over the TiO2 layer thickness, an athermal condition remarkably consistent with the simulation can be achieved. Therefore, a SiNx–TiO2 hybrid micro-ring resonator with a temperature dependent wavelength shift of 0.073 pm/ °C has been realized.
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42.82.-m Integrated optics
85.30.Tv Field effect devices
85.60.-q Optoelectronic devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
07.10.Cm Micromechanical devices and systems

Active modulation of wavelength and radiation direction of fluorescence via liquid crystal-tuned surface plasmons

Haibo Li, Shuping Xu, Yuejiao Gu, Kai Wang, and Weiqing Xu

Appl. Phys. Lett. 102, 051107 (2013); http://dx.doi.org/10.1063/1.4790826 (4 pages)

Online Publication Date: 7 February 2013

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Plasmonic elements which can tune light in micro-nano dimension have attracted much attention nowadays. However, available approaches for externally manipulating surface plasmons (SPs) are still in great demand. Here, we described an effective approach to modulate SPs by voltage signal. Through adding a liquid crystal cell with a dye layer to the Kretschmann configuration, the wavelength and the radiation direction of the fluorescence of dye can be modulated continuously and reversibly by changing applied voltages. This design has great application potentials in the development of tunable luminescent devices and smart plasmonic elements.
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42.70.Df Liquid crystals
73.22.Lp Collective excitations
78.20.Jq Electro-optical effects

Integrated high-quality factor silicon-on-sapphire ring resonators for the mid-infrared

Raji Shankar, Irfan Bulu, and Marko Lončar

Appl. Phys. Lett. 102, 051108 (2013); http://dx.doi.org/10.1063/1.4791558 (3 pages) | Cited 1 time

Online Publication Date: 7 February 2013

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We demonstrate high-quality (Q) factor grating-coupled ring resonators in a silicon-on-sapphire platform, operating at wavelengths between 4.3 and 4.6 μm. Total Q-factors of 151 000 and intrinsic Q-factors of 278 000 are measured, representing the highest Q-factors measured at the mid-infrared in Si.
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42.82.-m Integrated optics
42.79.Dj Gratings

Optoelectronic measurement of x-ray synchrotron pulses: A proof of concept demonstration

Stephen M. Durbin, Aamer Mahmood, Marc Caffee, Sergei Savikhin, Eric M. Dufresne, Haidan Wen, and Yuelin Li

Appl. Phys. Lett. 102, 051109 (2013); http://dx.doi.org/10.1063/1.4791559 (5 pages)

Online Publication Date: 7 February 2013

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Optoelectronic detection using photoconductive coplanar stripline devices has been applied to measuring the time profile of x-ray synchrotron pulses, a proof of concept demonstration that may lead to improved time-resolved x-ray studies. Laser sampling of current vs time delay between 12 keV x-ray and 800 nm laser pulses reveal the ∼50 ps x-ray pulse width convoluted with the ∼200 ps lifetime of the conduction band carriers. For GaAs implanted with 8 MeV protons, a time profile closer to the x-ray pulse width is observed. The protons create defects over the entire depth sampled by the x-rays, trapping the x-ray excited conduction electrons and minimizing lifetime broadening of the electrical excitation.
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07.85.Qe Synchrotron radiation instrumentation
85.60.-q Optoelectronic devices
06.30.Ft Time and frequency
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors

Mechanically driven light-generator with high durability

Soon Moon Jeong, Seongkyu Song, Soo-Keun Lee, and Byeongdae Choi

Appl. Phys. Lett. 102, 051110 (2013); http://dx.doi.org/10.1063/1.4791689 (5 pages)

Online Publication Date: 8 February 2013

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Mechanically activated luminescence from solids (mechanoluminescence) is a classical optical phenomenon induced in a substance when stressed or cleaved. However, no practical application has been realized due to its low luminescent intensity and lack of reproducibility. We demonstrate highly bright and durable mechanoluminescent flexible composite films with a brightness of ∼120 cd/m2 and durability over ∼100 000 repeated mechanical stresses by using a combination of copper-doped zinc sulfide (ZnS:Cu) particles and polydimethylsiloxane. Furthermore, the possibility of mechanoluminescent color-tuning by changing the repetitive stress rate on the composite films is also suggested. These findings can open a window for developing smart systems and opto-mechanical devices.
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78.60.Mq Sonoluminescence, triboluminescence
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli

Mid-infrared surface plasmon resonance in zinc oxide semiconductor thin films

Edward Sachet, Mark D. Losego, Joshua Guske, Stefan Franzen, and Jon-Paul Maria

Appl. Phys. Lett. 102, 051111 (2013); http://dx.doi.org/10.1063/1.4791700 (4 pages) | Cited 1 time

Online Publication Date: 8 February 2013

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Surface plasmon resonance (SPR) in semiconducting materials at mid-infrared (mid-IR) energies offers the potential for new plasmonic functionalities and integration schemes. Mainstream semiconductors are transparent to mid-IR energies, thus a tightly integrated monolithic package for SPR sensing becomes feasible. We report mid-IR surface plasmon resonance in zinc oxide as a model material for semiconductors with 4 × 1019 to 8 × 1019 cm−3 carriers. The surface plasmon modes were characterized using spectroscopic IR-ellipsometry and compared to a reflectivity simulation. The data confirm the feasibility of mid-IR SPR, show a generic ability for plasmon tuning, and demonstrate the predictive power of the reflectivity model.
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78.30.Fs III-V and II-VI semiconductors
78.66.Hf II-VI semiconductors
78.68.+m Optical properties of surfaces
81.05.Dz II-VI semiconductors
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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