APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

11 Feb 2013

Volume 102, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 063701 (2013); http://dx.doi.org/10.1063/1.4790115 (5 pages)

In-Tsang Lin, Hong-Chang Yang, and Jyh-Horng Chen
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

The possibility of giant dielectric materials for multilayer ceramic capacitors

Tatsuya Ishii, Makoto Endo, Kenichiro Masuda, and Keisuke Ishida

Appl. Phys. Lett. 102, 062901 (2013); http://dx.doi.org/10.1063/1.4791555 (4 pages)

Online Publication Date: 11 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
There have been numerous reports on discovery of giant dielectric permittivity materials called internal barrier layer capacitor in the recent years. We took particular note of one of such materials, i.e., BaTiO3 with SiO2 coating. It shows expressions of giant electric permittivity when processed by spark plasma sintering. So we evaluated various electrical characteristics of this material to find out whether it is applicable to multilayer ceramic capacitors. Our evaluation revealed that the isolated surface structure is the sole cause of expressions of giant dielectric permittivity.
Show PACS
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Origin of large recoverable strain in 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 near the ferroelectric-relaxor transition

Hugh Simons, John E. Daniels, Julia Glaum, Andrew J. Studer, Jacob L. Jones, and Mark Hoffman

Appl. Phys. Lett. 102, 062902 (2013); http://dx.doi.org/10.1063/1.4790285 (5 pages)

Online Publication Date: 11 February 2013

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
Piezoceramics of composition 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 demonstrate large recoverable strain at elevated temperature (T > 75 °C), which is absent at room temperature. In situ neutron diffraction was used to measure changes in the crystallographic and domain structures during electric field application at temperatures ranging from 25 °C to 100 °C. Quantitative evaluation of the ferroelastic domain volume fraction in the field-induced phases enabled calculation of the strain contribution from non-180° domain switching. The large recoverable strain is shown to be associated with the reversible nature of the phase transformation. These findings have implications to additional BNT-xBT-based composition and other relaxor ferroelectrics.
Show PACS
77.80.B- Phase transitions and Curie point
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
77.80.Fm Switching phenomena
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.fg Shape-memory effect; yield stress; superelasticity

The multiferroic perovskite YFeO3

Mingyu Shang, Chenyang Zhang, Tingsong Zhang, Lin Yuan, Lei Ge, Hongming Yuan, and Shouhua Feng

Appl. Phys. Lett. 102, 062903 (2013); http://dx.doi.org/10.1063/1.4791697 (3 pages)

Online Publication Date: 12 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The orthoferrite YFeO3 with orthorhombic perovskite structure (Pnma) has been synthesized by mild hydrothermal method. The temperature-dependent magnetization and hysteresis loops indicate that, due to the superexchange and Dzyaloshinskii-Moriya interactions in the crystals, the Fe spins order antiferromagnetically at the Néel temperature 655 K with a weak ferromagnetic moment. The observation of saturation polarization loops at room temperature and 77 K provide evidence for the ferroelectric character of the polycrystalline samples. Its Curie temperature has been obtained from the temperature dependence of the relative permittivities and thermal analysis. As a result, the structure exhibits simultaneously weak ferromagnetic and ferroelectric behavior.
Show PACS
77.80.B- Phase transitions and Curie point
75.30.Et Exchange and superexchange interactions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.50.Gg Ferrimagnetics
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.85.+t Magnetoelectric effects, multiferroics

Negative dielectric constant manifested by static electricity

Han Yan, Cindy Zhao, Kevin Wang, Lucy Deng, Matthew Ma, and Gu Xu

Appl. Phys. Lett. 102, 062904 (2013); http://dx.doi.org/10.1063/1.4792064 (4 pages)

Online Publication Date: 12 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Negative dielectric constant has long been pursued for a possible revolution in electronics and photonics. It is usually found in systems containing free electrons under high frequency oscillating field, but not involving static charges or insulating materials. Here, we report the observation of the phenomenon in an insulating polymer containing static electricity, which lasts for several weeks, where negative capacitance persists from <1 Hz up to MHz frequency, also presenting an unusual spiral curve in impedance spectrum, producing inductors without bulky magnetic coils.
Show PACS
77.22.Ch Permittivity (dielectric function)
72.30.+q High-frequency effects; plasma effects

Multilevel resistive switching memory with amorphous InGaZnO-based thin film

Ching-Hui Hsu, Yang-Shun Fan, and Po-Tsun Liu

Appl. Phys. Lett. 102, 062905 (2013); http://dx.doi.org/10.1063/1.4792316 (3 pages)

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study.
Show PACS
84.30.Sk Pulse and digital circuits

Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields

Manoj Narayanan, Sheng Tong, Shanshan Liu, Beihai Ma, and Uthamalingam Balachandran

Appl. Phys. Lett. 102, 062906 (2013); http://dx.doi.org/10.1063/1.4792529 (4 pages)

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Because most domain wall motion (extrinsic) is arrested at high bias fields, experiments were conducted to evaluate the lattice (intrinsic) contributions to the dielectric response of lead lanthanum zirconate titanate (PLZT) at 0-100 MV/m, 213-523 K, and 1-1000 kHz. The intrinsic contribution depended weakly on bias field and frequency, while the extrinsic contribution strongly depended on these same parameters as well as temperature. The threshold bias field required to suppress domain wall motion in PLZT thin films was ∼20-25 MV/m, and the intrinsic permittivity measured at those fields was ∼300-350, in agreement with literature values.
Show PACS
77.22.Ch Permittivity (dielectric function)
77.65.-j Piezoelectricity and electromechanical effects
77.80.Dj Domain structure; hysteresis
77.84.Cg PZT ceramics and other titanates
77.55.hj PZT

Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions

A. Zenkevich, M. Minnekaev, Yu. Matveyev, Yu. Lebedinskii, K. Bulakh, A. Chouprik, A. Baturin, K. Maksimova, S. Thiess, and W. Drube

Appl. Phys. Lett. 102, 062907 (2013); http://dx.doi.org/10.1063/1.4792525 (5 pages) | Cited 1 time

Online Publication Date: 14 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO3(001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO3/Pt junctions with a sub-μm Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of ∼30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO3/Pt (Cr/BaTiO3) interface +0.42(−0.03) eV following downward to upward polarization reversal.
Show PACS
73.40.Rw Metal-insulator-metal structures
79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
73.20.At Surface states, band structure, electron density of states

Effects of holmium substitution on multiferroic properties in Tb0.67Ho0.33MnO3

M. Staruch, G. Lawes, A. Kumarasiri, L. F. Cotica, and M. Jain

Appl. Phys. Lett. 102, 062908 (2013); http://dx.doi.org/10.1063/1.4792526 (5 pages)

Online Publication Date: 14 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this work, the structural, electrical, and magnetic properties of orthorhombic TbMnO3 and Tb0.67Ho0.33MnO3 ceramics are presented. The lattice parameters and the Mn-O-Mn bond angle were found to decrease with Ho-substitution as evidenced by Rietveld refinement of the X-ray diffraction data and Raman spectroscopy measurements. A weak ferromagnetic moment was observed in both dc and ac magnetic measurements of the Ho-substituted sample possibly due to spin canting in the antiferromagnetic phase. Tb0.67Ho0.33MnO3 was confirmed to be multiferroic with appearance of spontaneous polarization below 25 K and an additional increase in polarization ∼15.5 K associated with the ordering of the Ho3+ moments.
Show PACS
75.85.+t Magnetoelectric effects, multiferroics
61.66.Fn Inorganic compounds
75.30.Cr Saturation moments and magnetic susceptibilities
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Ee Antiferromagnetics
77.22.Ej Polarization and depolarization

Enhancement of resonant and non-resonant magnetoelectric coupling in multiferroic laminates with anisotropic piezoelectric properties

Deepak Rajaram Patil, Yisheng Chai, Rahul C. Kambale, Byung-Gu Jeon, Kyongjun Yoo, Jungho Ryu, Woon-Ha Yoon, Dong-Soo Park, Dae-Yong Jeong, Sang-Goo Lee, Jeongho Lee, Joong-Hee Nam, Jeong-Ho Cho, Byung-Ik Kim, and Kee Hoon Kim

Appl. Phys. Lett. 102, 062909 (2013); http://dx.doi.org/10.1063/1.4792590 (4 pages)

Online Publication Date: 15 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Giant transverse magnetoelectric voltage coefficients |mathE| = 751 and 305 V/cmOe at two electromechanical antiresonance frequencies are found in the symmetric metglas/[011]-oriented 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 crystal/metglas laminate. Unique torsional and diagonal vibration modes are identified to be responsible for those giant |mathE| values. Moreover, mathE is found to be anisotropic depending on the in-plane magnetic field directions, making the piezoelectrics with anisotropic planar piezoelectricity potentially useful base materials for multi-frequency, phase-sensitive magnetoelectric devices.
Show PACS
75.85.+t Magnetoelectric effects, multiferroics
77.84.Cg PZT ceramics and other titanates
77.65.Fs Electromechanical resonance; quartz resonators
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close