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11 Feb 2013

Volume 102, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 102, 063701 (2013); http://dx.doi.org/10.1063/1.4790115 (5 pages)

In-Tsang Lin, Hong-Chang Yang, and Jyh-Horng Chen
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High energy density nanocomposite capacitors using non-ferroelectric nanowires

Haixiong Tang and Henry A. Sodano

Appl. Phys. Lett. 102, 063901 (2013); http://dx.doi.org/10.1063/1.4792513 (4 pages)

Online Publication Date: 14 February 2013

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A high energy density nanocomposite capacitor is fabricated by incorporating high aspect ratio functionalized TiO2 nanowires (NWs) into a polyvinylidene-fluoride matrix. These nanocomposites exhibited energy density as high as 12.4 J/cc at 450 MV/m, which is nine times larger than commercial biaxially oriented polypropylene polypropylene capacitors (1.2 J/cc at 640 MV/m). Also, the power density can reach 1.77 MW/cc with a discharge speed of 2.89 μs. The results presented here demonstrate that nanowires can be used to develop nanocomposite capacitors with high energy density and fast discharge speed for future pulsed-power applications.
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84.32.Tt Capacitors

Studies of carrier recombination in solution-processed CuIn(S,Se)2 through photoluminescence spectroscopy

Hsin-Sheng Duan, Kuo-Chun Tang, Wan-Ching Hsu, Brion Bob, Tze-Bin Song, Bao Lei, Pi-Tai Chou, and Yang Yang

Appl. Phys. Lett. 102, 063902 (2013); http://dx.doi.org/10.1063/1.4792738 (4 pages)

Online Publication Date: 14 February 2013

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We investigated the effects of the cadmium sulfide (CdS) layer on defect passivation in hydrazine-based CuIn(S,Se)2 (CISSe) samples through photoluminescence measurements. Significant changes in the emission profile of the CISSe film are observed after a CdS layer is deposited on CISSe. It is likely that Cd diffusion into the CISSe film becomes more severe as a result of the fine grain size of our solution-processed films. Enhanced emission yields and longer carrier lifetimes are, thus, observed in Cd-treated (CdS-coated or Cd-soaked) CISSe films, indicating the action of Cd ions on Cu vacancies sites and a decrease in non-radiative recombination.
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68.55.ag Semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Hx Other solid inorganic materials
81.05.Hd Other semiconductors
61.72.jd Vacancies
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