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11 Feb 2013

Volume 102, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 102, 063701 (2013); http://dx.doi.org/10.1063/1.4790115 (5 pages)

In-Tsang Lin, Hong-Chang Yang, and Jyh-Horng Chen
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Al-doped ZnO thin-film transistor embedded micro-cantilever as a piezoresistive sensor

Prasenjit Ray and V. Ramgopal Rao

Appl. Phys. Lett. 102, 064101 (2013); http://dx.doi.org/10.1063/1.4792062 (4 pages) | Cited 1 time

Online Publication Date: 11 February 2013

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In this work, an aluminium-doped zinc oxide (AZO) thin film transistor, embedded in a polymer micro-cantilever, is demonstrated for nano-mechanical sensing applications. This device senses the surface stress due to a change in the carrier mobility of the semi-conducting layer. Due to the low Young's modulus and high strain sensitivity of the AZO layer, this micro-cantilever shows a deflection sensitivity of 116 ppm per nanometer of deflection. Also, mechanical characterization of these devices shows that the resonance frequency is in the range of a few tens of kilohertz which is suitable for sensor applications.
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85.30.Tv Field effect devices

Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

Jhonathan P. Rojas, Galo Torres Sevilla, and Muhammad M. Hussain

Appl. Phys. Lett. 102, 064102 (2013); http://dx.doi.org/10.1063/1.4791693 (4 pages)

Online Publication Date: 12 February 2013

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In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.
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84.32.Tt Capacitors
85.30.Tv Field effect devices

The effect of particle strength on the ballistic resistance of shear thickening fluids

Oren E. Petel, Simon Ouellet, Jason Loiseau, Bradley J. Marr, David L. Frost, and Andrew J. Higgins

Appl. Phys. Lett. 102, 064103 (2013); http://dx.doi.org/10.1063/1.4791785 (4 pages)

Online Publication Date: 12 February 2013

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The response of shear thickening fluids (STFs) under ballistic impact has received considerable attention due to its field-responsive nature. While efforts have primarily focused on traditional ballistic fabrics impregnated with these fluids, the response of pure STFs to penetration has received limited attention. In the present study, the ballistic response of particle-based STFs is investigated and the effects of fluid density and particle strength on ballistic performance are isolated. It is shown that the loss of ballistic resistance in the STFs at higher impact velocities is governed by the material strength of the particles in suspension. The results illustrate the range of velocities over which these STFs may provide effective armor solutions.
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62.10.+s Mechanical properties of liquids
82.70.Kj Emulsions and suspensions
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Electron diffraction using ultrafast electron bunches from a laser-wakefield accelerator at kHz repetition rate

Z.-H. He, A. G. R. Thomas, B. Beaurepaire, J. A. Nees, B. Hou, V. Malka, K. Krushelnick, and J. Faure

Appl. Phys. Lett. 102, 064104 (2013); http://dx.doi.org/10.1063/1.4792057 (4 pages) | Cited 1 time

Online Publication Date: 13 February 2013

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We show that electron bunches in the 50–100 keV range can be produced from a laser wakefield accelerator using 10 mJ, 35 fs laser pulses operating at 0.5 kHz. It is shown that using a solenoid magnetic lens, the electron bunch distribution can be shaped. The resulting transverse and longitudinal coherence is suitable for producing diffraction images from a polycrystalline 10 nm aluminum foil. The high repetition rate, the stability of the electron source, and the fact that its uncorrelated bunch duration is below 100 fs make this approach promising for the development of sub-100 fs ultrafast electron diffraction experiments.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
29.27.Eg Beam handling; beam transport

Comparative study of tip cross-sections for efficient galloping energy harvesting

Yaowen Yang, Liya Zhao, and Lihua Tang

Appl. Phys. Lett. 102, 064105 (2013); http://dx.doi.org/10.1063/1.4792737 (4 pages)

Online Publication Date: 15 February 2013

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This letter presents a comparative study of different tip cross-sections for small scale wind energy harvesting based on galloping phenomenon. A prototype device is fabricated with a piezoelectric cantilever and a tip body with various cross-section profiles (square, rectangle, triangle, and D-shape) and tested in a wind tunnel. Experimental results demonstrate the superiority of the square-sectioned tip for the low cut-in wind speed of 2.5 m/s and the high peak power of 8.4 mW. An analytical model is established and verified by the experimental results. It is recommended that the square section should be used for small wind galloping energy harvesters.
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84.60.-h Direct energy conversion and storage
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
88.50.Mp Electricity generation, grid integration from wind
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
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