APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

11 Feb 2013

Volume 102, Issue 6, Articles (06xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 063701 (2013); http://dx.doi.org/10.1063/1.4790115 (5 pages)

In-Tsang Lin, Hong-Chang Yang, and Jyh-Horng Chen
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Sub-volt broadband hybrid plasmonic-vanadium dioxide switches

Arash Joushaghani, Brett A. Kruger, Suzanne Paradis, David Alain, J. Stewart Aitchison, and Joyce K. S. Poon

Appl. Phys. Lett. 102, 061101 (2013); http://dx.doi.org/10.1063/1.4790834 (4 pages) | Cited 2 times

Online Publication Date: 11 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The insulator-metal phase transition of a correlated-electron material, vanadium dioxide, is used to demonstrate electrically controlled, compact, broadband, and low voltage plasmonic switches. The devices are micron-scale in length and operate near a wavelength of 1550 nm. The switching bandwidths exceed 100 nm and 400 mV is sufficient to attain extinction ratios in excess of 20 dB. The results illustrate the promise of using phase transition materials for efficient and ultra-compact plasmonic switches and modulators.
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Electro-refractive effect in Ge/SiGe multiple quantum wells

J. Frigerio, P. Chaisakul, D. Marris-Morini, S. Cecchi, M. S. Roufied, G. Isella, and L. Vivien

Appl. Phys. Lett. 102, 061102 (2013); http://dx.doi.org/10.1063/1.4792271 (4 pages)

Online Publication Date: 11 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the electro-refractive effect in Ge/SiGe multiple quantum wells grown by low energy plasma enhanced chemical vapor deposition. The electro-refractive effect was experimentally characterized by the shift of Fabry-Perot fringes in the transmission spectra of a 64 μm long slab waveguide. A refractive index variation up to 1.3 × 10−3 was measured with an applied electric field of 88 kV/cm at 1475 nm, 50 meV below the excitonic resonance, with a VπLπ figure of merit of 0.46 V cm. The device performances are promising for the realization of Mach Zehnder modulators in the Ge-Si material platform.
Show PACS
78.67.De Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Subwavelength superfocusing with a dipole-wave-reciprocal binary zone plate

Jun Wang, Fei Qin, Dao Hua Zhang, Dongdong Li, Yueke Wang, Xiaonan Shen, Ting Yu, and Jinghua Teng

Appl. Phys. Lett. 102, 061103 (2013); http://dx.doi.org/10.1063/1.4791581 (4 pages)

Online Publication Date: 12 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We propose an idea of using a convergent dipole wave at the aperture, radiated from a dipole at distance of z0, to produce a perfect focusing at z0. We verified this idea through simulation and experimental observation. It is demonstrated that the zone plate designed based on the idea can provide a subwavelength superfocusing by effectively bending the surface waves in a Fresnel region of 100 nm to a couple of wavelengths and is suitable for a situation where a superresolution at a micro working distance is essential.
Show PACS
42.79.Ci Filters, zone plates, and polarizers
42.25.Fx Diffraction and scattering

Frequency-modulated light scattering in colloidal suspensions

Liang Mei, Sune Svanberg, and Gabriel Somesfalean

Appl. Phys. Lett. 102, 061104 (2013); http://dx.doi.org/10.1063/1.4792220 (4 pages)

Online Publication Date: 12 February 2013

Full Text: Read Online (HTML) | Download PDF


See Also: Publisher's Note

Show Abstract
Frequency-modulated light field fluctuations due to moving particles in colloidal suspensions are examined using heterodyne interferometry. The power spectrum is the combined result of a time-of-flight-related frequency distribution due to light scattering and frequency shifts due to the Doppler effect. An approximation model is developed based on diffusion theory and verified experimentally. The potential for application towards comprehensive diagnosis of both particle dynamics and optical properties of the examined media is discussed.
Show PACS
82.70.Dd Colloids
82.70.Kj Emulsions and suspensions
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Mobility enhancement of top contact pentacene based organic thin film transistor with bi-layer GeO/Au electrodes

Mir Waqas Alam, Zhaokui Wang, Shigeki Naka, and Hiroyuki Okada

Appl. Phys. Lett. 102, 061105 (2013); http://dx.doi.org/10.1063/1.4792235 (3 pages)

Online Publication Date: 12 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The enhancement of the charge injection and field effect mobility by inserting a thin (5 nm) germanium oxide (GeO) interlayer between the Au electrode and pentacene layer in a top contact pentacene based organic thin-film transistor (OTFTs) was reported. In comparison with the pentacene-based OTFT with only-Au electrode, the device performance has been considerably improved, which exhibits the highest field effect mobility of 0.96 cm2/Vs. The improvement was attributed to significant reduction of barrier height at Au/pentacene interfaces and smoothed surface of pentacene layer after inserting a thin GeO layer.
Show PACS
85.30.Tv Field effect devices

Harnessing second-order optical nonlinearities at interfaces in multilayer silicon-oxy-nitride waveguides

Dylan F. Logan, Ali B. Alamin Dow, Dmitri Stepanov, Payam Abolghasem, Nazir P. Kherani, and Amr S. Helmy

Appl. Phys. Lett. 102, 061106 (2013); http://dx.doi.org/10.1063/1.4792272 (4 pages)

Online Publication Date: 12 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate multi-layer silicon-oxy-nitride (SiON) waveguides as a platform for broadband tunable phase-matching of second-order nonlinear interactions arising at material interfaces. Second-harmonic generation (SHG) is measured with a 2 ps pulsed pump of 1515–1535 nm wavelength, where 6 nW power is generated by an average pump power of 30 mW in a 0.92 mm long device. The wavelength acceptance bandwidth of the SHG is as broad as 20 nm due to the low material dispersion of SiON waveguides. The waveguide structure provides a viable method for utilizing second order nonlinearity for light generation and manipulation in silicon photonic circuits.
Show PACS
42.79.Gn Optical waveguides and couplers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films

Ali Hendaoui, Nicolas Émond, Mohamed Chaker, and Émile Haddad

Appl. Phys. Lett. 102, 061107 (2013); http://dx.doi.org/10.1063/1.4792277 (4 pages)

Online Publication Date: 12 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This paper describes a VO2-based smart structure with an emittance that increases with the temperature. A large tunability of the spectral emittance, which can be as high as 0.90, was achieved. The transition of the total emittance with the temperature was fully reversible according to a hysteresis cycle, with a transition temperature of 66.5 °C. The total emittance of the device was found to be 0.22 and 0.71 at 25 °C and 100 °C, respectively. This emittance performance and the structure simplicity are promising for the next generation of energy-efficient cost-effective passive thermal control systems of spacecrafts.
Show PACS
72.60.+g Mixed conductivity and conductivity transitions

Improvement of volume holographic performance by plasmon-induced holographic absorption grating

Chengmingyue Li, Liangcai Cao, Jingming Li, Qingsheng He, Guofan Jin, Shiman Zhang, and Fushi Zhang

Appl. Phys. Lett. 102, 061108 (2013); http://dx.doi.org/10.1063/1.4792312 (3 pages) | Cited 1 time

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the enhanced holographic performance by employing a strong volume holographic absorption grating induced by localized surface plasmon resonance effect in a bulk gold nanoparticles doped photopolymer. The contributions of plasmon-induced volume holographic absorption grating is characterized through the Kogelnik's coupled wave model and demonstrated experimentally by using two-beam interference technology. At the 0.05 vol. % concentration of the gold nanoparticles in the bulk photopolymer, 101.8% increase in the diffraction efficiency and more than four times suppression of the first side lobe in angular selectivity have been achieved.
Show PACS
42.40.Eq Holographic optical elements; holographic gratings
42.70.Jk Polymers and organics
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Integrated sensor for ultra-thin layer sensing based on hybrid coupler with short-range surface plasmon polariton and dielectric waveguide

Boyu Fan, Fang Liu, Xiaoyan Wang, Yunxiang Li, Kaiyu Cui, Xue Feng, and Yidong Huang

Appl. Phys. Lett. 102, 061109 (2013); http://dx.doi.org/10.1063/1.4792319 (4 pages)

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Based on a hybrid coupler composed of short-range surface plasmon polariton (SRSPP) and dielectric waveguides, an integrated sensor for ultra-thin layer sensing has been realized. The simulation and experiment results demonstrate that the thickness variation of detection layer (polymer layer) about several nanometers could be detected. The measured thickness-detection sensitivity is as high as 0.67 dB/nm. And the sensitive region for thickness variation of polymer layer can be adjusted widely by varying the thickness of the SRSPP waveguide.
Show PACS
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Gn Optical waveguides and couplers
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Low-threshold and quasi-single-mode random laser within a submicrometer-sized ZnO spherical particle film

Hideki Fujiwara, Ryo Niyuki, Yoshie Ishikawa, Naoto Koshizaki, Takeshi Tsuji, and Keiji Sasaki

Appl. Phys. Lett. 102, 061110 (2013); http://dx.doi.org/10.1063/1.4792349 (4 pages)

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An unique random laser exhibiting quasi-single-mode and low lasing threshold is developed by a homogenized submicrometer-sized zinc oxide particle film dispersed with intentionally introduced polymer particles as point defects. Such unique random lasing is dominantly initiated at the defect sites, although multi-mode peaks with a collapsed broad emission spectrum are observed at the defect-free sites as in the conventional random lasers. Thus our proposed simple structure can possibly provide the controllability of lasing properties even in random structures.
Show PACS
42.55.-f Lasers
42.70.Jk Polymers and organics

Large photoresponse of Cu:7,7,8,8-tetracyanoquinodimethane nanowire arrays formed as aligned nanobridges

Rabaya Basori, K. Das, Prashant Kumar, K. S. Narayan, and A. K. Raychaudhuri

Appl. Phys. Lett. 102, 061111 (2013); http://dx.doi.org/10.1063/1.4792470 (4 pages)

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report large photoresponse in an array of Cu:TCNQ (TCNQ-7,7,8,8-tetracyanoquinodimethane) nanowires fabricated as nanobridge device. The device shows highest photoresponse for excitation wavelength = 405 nm. The current gain at zero bias can reach ∼104 with an illumination power density of 2 × 106 W/m2. The zero bias responsivity is ∼0.3 mA/W, which increases upto 1 A/W for an applied bias of 2.0 V. Dark and illuminated I-V data are analyzed by a model of two Schottky diodes connected back-to-back, which shows that the predominant photocurrent in the device arises from the photoconductive response of the nanowires.
Show PACS
85.30.Kk Junction diodes
85.60.-q Optoelectronic devices

Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

C. Wang, H. J. Qu, W. X. Chen, G. Z. Ran, H. Y. Yu, B. Niu, J. Q. Pan, and W. Wang

Appl. Phys. Lett. 102, 061112 (2013); http://dx.doi.org/10.1063/1.4792508 (4 pages)

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Electrical plasmonic sources with compact sizes are a fundamental component in plasmonics. Here, we report a simple plasmonic diode having an Ag/InGaAsP quantum well Schottky structure. The polarization ratio (TM:TE) of the edge-emission photoluminescence for the quantum wells is about 2:1 and increases to about 3:1 after covered by Ag. As contrast, the electroluminescence polarization ratio exceeds 10:1 at a low current, indicating a high plasmon generation efficiency but drops gradually as current increasing; simultaneously, the peak wavelength red shifts evidently, which are attributed to the recombination zone shift and quantum confinement Stark effect.
Show PACS
85.30.Kk Junction diodes

Enhanced depth of field laser processing using an ultra-high-speed axial scanner

M. Duocastella and C. B. Arnold

Appl. Phys. Lett. 102, 061113 (2013); http://dx.doi.org/10.1063/1.4791593 (4 pages)

Online Publication Date: 13 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Lasers are ubiquitous in materials processing, but the requirement of precise control of the focal plane in order to ensure optimal performance constitutes a time limiting step for high-throughput laser manufacturing. Here, we overcome this limitation by axially scanning the focus at high speeds using an acoustically driven liquid lens. We demonstrate this approach by processing silicon surfaces, and we find it is possible to enhance the depth-of-field by an order of magnitude without loss in lateral resolution. These results open the door to a fundamental change in the paradigm for laser processing by eliminating the need in z-focus control.
Show PACS
42.62.-b Laser applications
42.79.Ls Scanners, image intensifiers, and image converters

Conical air prism arrays as an embedded reflector for high efficient InGaN/GaN light emitting diodes

Volodymyr V. Lysak, Ji Hye Kang, and Chang-Hee Hong

Appl. Phys. Lett. 102, 061114 (2013); http://dx.doi.org/10.1063/1.4773559 (3 pages)

Online Publication Date: 14 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The effect of the combination of triangular prisms and cones as air-void structures arrays on the enhancement of light extraction efficiency of InGaN light-emitting diodes (LEDs) is investigated. The arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 74% and far-field angle as low as 125° is realized with a compact arrangement of arrays compared with that of a conventional LED.
Show PACS
85.60.Jb Light-emitting devices

Strong enhancement of Eu+3 luminescence in europium-implanted GaN by Si and Mg codoping

J. K. Mishra, T. Langer, U. Rossow, S. Shvarkov, A. Wieck, and A. Hangleiter

Appl. Phys. Lett. 102, 061115 (2013); http://dx.doi.org/10.1063/1.4793207 (3 pages) | Cited 1 time

Online Publication Date: 14 February 2013

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A strong enhancement of Eu3+ luminescence in europium-implanted GaN samples is obtained by codoping with silicon (Si) and magnesium (Mg), simultaneously. The Eu3+ intensity in the 5D0 to 7F2 transition region is found to be 30 times higher compared to europium-implanted undoped GaN. The major contribution to this overall enhancement is due a weak peak present only in europium-implanted Mg-doped GaN at 2.0031 eV (618.9 nm) which is strongly enhanced by codoping both Mg and Si. The excitation process of europium ions is proposed to take place through a donor-acceptor pair related energy transfer mechanism.
Show PACS
78.55.Cr III-V semiconductors
61.72.U- Doping and impurity implantation
71.55.Eq III-V semiconductors
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close