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11 Feb 2013

Volume 102, Issue 6, Articles (06xxxx)

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Appl. Phys. Lett. 102, 063701 (2013); http://dx.doi.org/10.1063/1.4790115 (5 pages)

In-Tsang Lin, Hong-Chang Yang, and Jyh-Horng Chen
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Hole doping of graphene supported on Ir(111) by AlBr3

N. A. Vinogradov, K. A. Simonov, A. A. Zakharov, J. W. Wells, A. V. Generalov, A. S. Vinogradov, N. Mårtensson, and A. B. Preobrajenski

Appl. Phys. Lett. 102, 061601 (2013); http://dx.doi.org/10.1063/1.4790579 (5 pages)

Online Publication Date: 11 February 2013

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In this letter, we report an easy and tenable way to tune the type of charge carriers in graphene, using a buried layer of AlBr3 and its derivatives on the graphene/Ir(111) interface. Upon the deposition of AlBr3 on graphene/Ir(111) and subsequent temperature-assisted intercalation of graphene/Ir(111) with atomic Br and AlBr3, pronounced hole doping of graphene is observed. The evolution of the graphene/Br-AlBr3/Ir(111) system at different stages of intercalation has been investigated by means of microbeam low-energy electron microscopy/electron diffraction, core-level photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy.
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61.72.up Other materials
81.05.ue Graphene
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
79.60.-i Photoemission and photoelectron spectra
79.60.Jv Interfaces; heterostructures; nanostructures

Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition

I. Bryan, A. Rice, L. Hussey, Z. Bryan, M. Bobea, S. Mita, J. Xie, R. Kirste, R. Collazo, and Z. Sitar

Appl. Phys. Lett. 102, 061602 (2013); http://dx.doi.org/10.1063/1.4792694 (4 pages)

Online Publication Date: 14 February 2013

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Strain relaxation mechanisms were investigated in epitaxial AlN layers deposited on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition. It was revealed that epitaxial AlN layers under tensile strain can exhibit micro-cracks and nano-pits. A correlation existed between the amount of strain and number of pits in localized areas. Pit densities as high as 1010 cm−2 were observed in areas where the tensile strain reached ∼0.4%, while unstrained areas of the film showed step flow growth. These nano-pits occurred as a strain relaxation mechanism and were not related to intrinsic defects, such as threading dislocations or inversion domains.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.ag Semiconductors
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.mt Cracks
81.05.Ea III-V semiconductors

Experimental evidence of the atmospheric convective transport contribution to sessile droplet evaporation

F. Carle, B. Sobac, and D. Brutin

Appl. Phys. Lett. 102, 061603 (2013); http://dx.doi.org/10.1063/1.4792058 (4 pages)

Online Publication Date: 14 February 2013

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We investigate the contribution of the natural convective transport in the vapor phase on the evaporation rate of an evaporating sessile droplet. When comparing the experimental data with the quasi-steady diffusion-controlled evaporation model, an increasing deviation with substrate temperature that was attributed to the effect of the natural convection on the vapor field has been recently highlighted. To validate this analysis, we present experimental results obtained with two gravity levels: 1 g and μg. The contribution of the natural convection is analyzed with the Grashof number, and an empirical model is developed combining diffusive and convective transport.
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47.55.D- Drops and bubbles
68.03.Fg Evaporation and condensation of liquids
66.10.C- Diffusion and thermal diffusion

Gold ion implantation induced high conductivity and enhanced electron field emission properties in ultrananocrystalline diamond films

K. J. Sankaran, H. C. Chen, B. Sundaravel, C. Y. Lee, N. H. Tai, and I. N. Lin

Appl. Phys. Lett. 102, 061604 (2013); http://dx.doi.org/10.1063/1.4792744 (4 pages)

Online Publication Date: 15 February 2013

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We report high conductivity of 185 (Ω cm)−1 and superior electron field emission (EFE) properties, viz. low turn-on field of 4.88 V/μm with high EFE current density of 6.52 mA/cm2 at an applied field of 8.0 V/μm in ultrananocrystalline diamond (UNCD) films due to gold ion implantation. Transmission electron microscopy examinations reveal the presence of Au nanoparticles in films, which result in the induction of nanographitic phases in grain boundaries, forming conduction channels for electron transport. Highly conducting Au ion implanted UNCD films overwhelms that of nitrogen doped ones and will create a remarkable impact to diamond-based electronics.
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73.61.Wp Fullerenes and related materials
79.70.+q Field emission, ionization, evaporation, and desorption
61.72.up Other materials
81.05.ug Diamond
61.72.Mm Grain and twin boundaries
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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