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18 Feb 2013

Volume 102, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 073101 (2013); http://dx.doi.org/10.1063/1.4790646 (4 pages)

V. Reboud, J. Romero-Vivas, P. Lovera, N. Kehagias, T. Kehoe, G. Redmond, and C. M. Sotomayor Torres
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Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors: Energy level and cross section

Marco Silvestri, Michael J. Uren, and Martin Kuball

Appl. Phys. Lett. 102, 073501 (2013); http://dx.doi.org/10.1063/1.4793196 (4 pages)

Online Publication Date: 19 February 2013

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Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT). From the extracted frequency dependent trap-conductance, an energy level 0.7 eV below the conduction band and a capture cross section of 10−13 cm2 were obtained. The approach presented in this work avoids the non-equilibrium electrical or optical techniques that have been used to date and extracts the device relevant trap characteristics in short channel AlGaN/GaN HEMTs. Quantitative prediction of the trap induced transconductance dispersion in HEMTs is demonstrated.
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85.30.Tv Field effect devices

Spatially resolved electrical parameters of silicon wafers and solar cells by contactless photoluminescence imaging

Ziv Hameiri and Pooja Chaturvedi

Appl. Phys. Lett. 102, 073502 (2013); http://dx.doi.org/10.1063/1.4792348 (3 pages)

Online Publication Date: 21 February 2013

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A contactless method to extract spatially resolved electrical parameters of silicon wafers and silicon solar cells is introduced. The method is based on photoluminescence imaging and can be applied throughout the solar cell fabrication process, even before junction formation. To validate the method, the parameters obtained by it are compared to the ones obtained by the well-established Suns-Voc measurement. Good agreement is obtained.
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88.40.jj Silicon solar cells
88.40.hj Efficiency and performance of solar cells

1/f noise analysis of replacement metal gate bulk p-type fin field effect transistor

Jae Woo Lee, Moon ju Cho, Eddy Simoen, Romain Ritzenthaler, Mitsuhiro Togo, Guillaume Boccardi, Jerome Mitard, Lars-Åke Ragnarsson, Thomas Chiarella, Anabela Veloso, Naoto Horiguchi, Aaron Thean, and Guido Groeseneken

Appl. Phys. Lett. 102, 073503 (2013); http://dx.doi.org/10.1063/1.4793306 (3 pages)

Online Publication Date: 21 February 2013

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The origin of performance difference between gate-first (GF) and replacement metal gate (RMG) fin field effect transistors (FinFETs) is investigated. Although RMG technology has the advantage of low thermal-budget, a 1.5 times lower effective hole mobility is shown for the high-k last (HKL) FinFET. Based on low frequency noise analysis, it is shown that the carrier transport is due to the carrier number fluctuation with correlated mobility fluctuation from the interface states. For HKL FinFETs, about 10 times higher trap density is observed compared to GF and high-k first FinFETs, which is generated during the dummy gate oxide removal process.
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85.30.Tv Field effect devices

Piezoelectric resonators based on self-assembled diphenylalanine microtubes

E. D. Bosne, A. Heredia, S. Kopyl, D. V. Karpinsky, A. G. Pinto, and A. L. Kholkin

Appl. Phys. Lett. 102, 073504 (2013); http://dx.doi.org/10.1063/1.4793417 (4 pages)

Online Publication Date: 21 February 2013

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Piezoelectric actuation has been widely used in microelectromechanical devices including resonance-based biosensors, mass detectors, resonators, etc. These were mainly produced by micromachining of Si and deposited inorganic piezoelectrics based on metal oxides or perovskite-type materials which have to be further functionalized in order to be used in biological applications. In this work, we demonstrate piezoelectrically driven micromechanical resonators based on individual self-assembled diphenylalanine microtubes with strong intrinsic piezoelectric effect. Tubes of different diameters and lengths were grown from the solution and assembled on a rigid support. The conducting tip of the commercial atomic force microscope was then used to both excite vibrations and study resonance behavior. Efficient piezoelectric actuation at the fundamental resonance frequency ≈2.7 MHz was achieved with a quality factor of 114 for a microtube of 277 μm long. A possibility of using piezoelectric dipeptides for biosensor applications is discussed.
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87.80.-y Biophysical techniques (research methods)
07.10.Cm Micromechanical devices and systems
77.65.Fs Electromechanical resonance; quartz resonators
81.16.Dn Self-assembly
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Negative differential photovoltage in a biased double heterojunction

A. Žukauskas, D. Meškauskas, V. Jakštas, and P. Vitta

Appl. Phys. Lett. 102, 073505 (2013); http://dx.doi.org/10.1063/1.4793435 (3 pages)

Online Publication Date: 22 February 2013

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We report on negative differential photovoltage (DPV), which is observed under modulated photoexcitation of a double heterojunction, when the common positive photovoltage increment due to photocurrent modulation is suppressed by high bias current. The negative DPV was shown to be due to the effect of photoconductivity on the series resistance of the heterojunction and due to the modulation of junction temperature. In AlGaInP double heterojunction light-emitting diodes, the magnitudes of negative DPV in the range of −10 μV correspond to the estimated variation of series resistance and junction temperature as low as ∼10−3 Ω and ∼10−2 K, respectively.
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85.60.Jb Light-emitting devices

Conditions for a carrier multiplication in amorphous-selenium based photodetector

Tomoaki Masuzawa, Shingo Kuniyoshi, Masanori Onishi, Richika Kato, Ichitaro Saito, Takatoshi Yamada, Angel T. T. Koh, Daniel H. C. Chua, Tatsuo Shimosawa, and Ken Okano

Appl. Phys. Lett. 102, 073506 (2013); http://dx.doi.org/10.1063/1.4793487 (4 pages)

Online Publication Date: 22 February 2013

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Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.30.Am Elemental semiconductors and insulators
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Jyun-Yu Tsai, Ting-Chang Chang, Wen-Hung Lo, Ching-En Chen, Szu-Han Ho, Hua-Mao Chen, Ya-Hsiang Tai, Osbert Cheng, and Cheng-Tung Huang

Appl. Phys. Lett. 102, 073507 (2013); http://dx.doi.org/10.1063/1.4791676 (4 pages)

Online Publication Date: 22 February 2013

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This work finds a significant difference in degradation under hot carrier stress (HCS) due to additional hole injection in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. A comparison performed on degradation of input/output (I/O) and standard performance (SP) devices showed that performance degradation of the I/O device is worse than the SP device under HCS. For the SP device, both channel-electrons and hot holes can inject into gate dielectric, in which hole acts to diminish the stress field. However, I/O device shows only electron injection. The proposed model is confirmed by gate induced drain leakage current and simulation tool.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
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