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18 Feb 2013

Volume 102, Issue 7, Articles (07xxxx)

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Appl. Phys. Lett. 102, 073101 (2013); http://dx.doi.org/10.1063/1.4790646 (4 pages)

V. Reboud, J. Romero-Vivas, P. Lovera, N. Kehagias, T. Kehoe, G. Redmond, and C. M. Sotomayor Torres
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Observation of the electron-accumulation layer at the surface of InN by cross-sectional micro-Raman spectroscopy

YongJin Cho, Manfred Ramsteiner, and Oliver Brandt

Appl. Phys. Lett. 102, 072101 (2013); http://dx.doi.org/10.1063/1.4792837 (4 pages)

Online Publication Date: 19 February 2013

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We study plasmon-related excitations in InN by micro-Raman spectroscopy. The surface sensitivity of Raman scattering is found to be strongly enhanced for backscattering from cleaved edges of thick films. This fact enables us to observe the electron accumulation layer at the surface of InN and to deduce the associated volume charge density.
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73.20.At Surface states, band structure, electron density of states
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.30.Hv Other nonmetallic inorganics
68.55.ag Semiconductors

Space charge polarization induced memory in SmNiO3/Si transistors

Sang Hyeon Lee, Moonkyung Kim, Sieu D. Ha, Jo-Won Lee, Shriram Ramanathan, and Sandip Tiwari

Appl. Phys. Lett. 102, 072102 (2013); http://dx.doi.org/10.1063/1.4790394 (4 pages)

Online Publication Date: 19 February 2013

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The correlated oxide, SmNiO3 (SNO), is characterized and explored as a phase transition material in silicon capacitors and transistors with SNO as a floating gate sandwiched between silicon dioxide gate insulators. The structures show hysteresis at low bias voltages. The capacitance and its voltage hysteresis window increase as the frequency of the applied field decreases with a response time of polarization of above a microsecond. This suggests a space charge polarization dominated by low frequency permittivity response. Instability of 3+ oxidation state of Ni and presence of oxygen vacancies are believed to lead to a polarization effect through Poole-Frenkel charge trapping/de-trapping. Metal-oxide-semiconductor transistors show counterclockwise voltage hysteresis consistent with polarization switching effect. The stored information decays gradually due to the depolarization field with retention times of the order of 10 s at room temperature.
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85.30.Tv Field effect devices
84.30.Sk Pulse and digital circuits
84.32.Tt Capacitors

Temperature sensitive photoconductivity observed in InN layers

Lei Guo, Xinqiang Wang, Li Feng, Xiantong Zheng, Guang Chen, Xuelin Yang, Fujun Xu, Ning Tang, Liwu Lu, Weikun Ge, and Bo Shen

Appl. Phys. Lett. 102, 072103 (2013); http://dx.doi.org/10.1063/1.4793190 (5 pages)

Online Publication Date: 19 February 2013

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Photoconductivity has been systematically studied in unintentionally doped n-type InN film with super-bandgap excitation (1.53 eV) at temperatures varying in the range of 100–300 K. A negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature. Transition temperature from negative to positive photoconductivity is found to be greatly related to the residual electron concentration as the higher the electron concentration, the lower the transition temperature. An energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
71.55.Eq III-V semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance

Synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy of n-ZnO:Al/p-GaN:Mg heterojunction

Kai-Hsuan Lee, Ping-Chuan Chang, Tse-Pu Chen, Sheng-Po Chang, Hung-Wei Shiu, Lo-Yueh Chang, Chia-Hao Chen, and Shoou-Jinn Chang

Appl. Phys. Lett. 102, 072104 (2013); http://dx.doi.org/10.1063/1.4793434 (5 pages)

Online Publication Date: 22 February 2013

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Al-doped ZnO (AZO) deposited by radio frequency co-sputtering is formed on epitaxial Mg-doped GaN template at room temperature to achieve n-AZO/p-GaN heterojunction. Alignment of AZO and GaN bands is investigated using synchrotron radiation based cross-sectional scanning photoelectron microscopy and spectroscopy on the nonpolar side-facet of a vertically c-axis aligned heterostructure. It shows type-II band configuration with valence band offset of 1.63 ± 0.1 eV and conduction band offset of 1.61 ± 0.1 eV, respectively. Rectification behavior is clearly observed, with a ratio of forward-to-reverse current up to six orders of magnitude when the bias is applied across the p-n junction.
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81.05.Dz II-VI semiconductors
81.05.Ea III-V semiconductors
81.15.Cd Deposition by sputtering
71.20.Nr Semiconductor compounds
73.40.Ei Rectification
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces

Ting-Hsiang Hung, Sriram Krishnamoorthy, Michele Esposto, Digbijoy Neelim Nath, Pil Sung Park, and Siddharth Rajan

Appl. Phys. Lett. 102, 072105 (2013); http://dx.doi.org/10.1063/1.4793483 (4 pages)

Online Publication Date: 22 February 2013

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Interface charges at atomic layer deposited Al2O3/III-nitride interfaces were investigated for III-nitride layers of different polarity. A large positive sheet charge density is induced at the Al2O3/III-nitride interface on all the orientations of GaN and Ga-polar AlGaN, and this sheet charge can be significantly altered using post-metallization anneals. It is proposed that the charges are caused by interfacial defects that can be passivated and neutralized through a H2 based anneal. Tailoring of the interface charge density described here can be used to improve critical device characteristics such as gate leakage and electron transport, and for lateral electrostatic engineering.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation
61.72.Cc Kinetics of defect formation and annealing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film

Ayan Kar, Nikhil Shukla, Eugene Freeman, Hanjong Paik, Huichu Liu, Roman Engel-Herbert, S. S. N. Bhardwaja, Darrell G. Schlom, and Suman Datta

Appl. Phys. Lett. 102, 072106 (2013); http://dx.doi.org/10.1063/1.4793537 (5 pages)

Online Publication Date: 22 February 2013

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This letter investigates the intrinsic electronic switching time associated with the insulator-to-metal phase transition in epitaxial single crystal vanadium dioxide (VO2) thin films using impedance spectroscopy and ac conductivity measurements. The existence of insulating and metallic phase coexistence, intrinsic to the epitaxial (001) oriented VO2 thin film grown on a (001) rutile TiO2 substrate, results in a finite capacitance being associated with the VO2 films in their insulating phase that limits the electronic switching speed. Insights into the switching characteristics and their correlation to the transport mechanism in the light of phase coexistence are obtained by performing a detailed scaling study on VO2 two-terminal devices.
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72.60.+g Mixed conductivity and conductivity transitions
73.61.Ng Insulators
71.30.+h Metal-insulator transitions and other electronic transitions
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