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18 Feb 2013

Volume 102, Issue 7, Articles (07xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 102, 073101 (2013); http://dx.doi.org/10.1063/1.4790646 (4 pages)

V. Reboud, J. Romero-Vivas, P. Lovera, N. Kehagias, T. Kehoe, G. Redmond, and C. M. Sotomayor Torres
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Stoichiometry dependence and thermal stability of conducting NdGaO3/SrTiO3 heterointerfaces

F. Gunkel, K. Skaja, A. Shkabko, R. Dittmann, S. Hoffmann-Eifert, and R. Waser

Appl. Phys. Lett. 102, 071601 (2013); http://dx.doi.org/10.1063/1.4792509 (4 pages)

Online Publication Date: 19 February 2013

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The structural and electrical properties of conducting NdGaO3/SrTiO3 (NGO/STO) heterostructures grown at various deposition temperatures were investigated. X-ray diffraction and X-ray photoelectron spectroscopy reveal a strong impact of the growth temperature on both crystallinity and cation stoichiometry of the NGO thin films. This stoichiometry variation significantly affects the electrical properties of the NGO/STO interface. High temperature conductance measurements under oxygen equilibrium conditions show a distinct conductance contribution of the NGO/STO interface up to 1000 K and exclude a conduction effect caused by a mere reduction of the STO substrate. Above 1000 K, the interface conduction is degrading due to a thermal instability. Both stoichiometry variation in as-grown films and thermal instability are attributed to the preferential evaporation of gallium from the NGO thin films at elevated temperatures.
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73.40.-c Electronic transport in interface structures
79.60.Jv Interfaces; heterostructures; nanostructures
81.15.Fg Pulsed laser ablation deposition
61.66.Bi Elemental solids
61.66.Dk Alloys
68.35.Ct Interface structure and roughness

Hydrogen plasma microlithography of graphene supported on a Si/SiO2 substrate

Baran Eren, Thilo Glatzel, Marcin Kisiel, Wangyang Fu, Rémy Pawlak, Urs Gysin, Cornelia Nef, Laurent Marot, Michel Calame, Christian Schönenberger, and Ernst Meyer

Appl. Phys. Lett. 102, 071602 (2013); http://dx.doi.org/10.1063/1.4793197 (5 pages)

Online Publication Date: 19 February 2013

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In this work, a silicon stencil mask with a periodic pattern is used for hydrogen plasma microlithography of single layer graphene supported on a Si/SiO2 substrate. Obtained patterns are imaged with Raman microscopy and Kelvin probe force microscopy, thanks to the changes in the vibrational modes and the contact potential difference (CPD) of graphene after treatment. A decrease of 60 meV in CPD as well as a significant change of the D/G ratio in the Raman spectra can be associated with a local hydrogenation of graphene, while the topography remains invariant to the plasma exposure.
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78.67.Wj Optical properties of graphene
52.77.-j Plasma applications
78.30.Na Fullerenes and related materials
63.22.Rc Phonons in graphene

Unveiling the mechanisms of dressed-photon–phonon etching based on hierarchical surface roughness measure

Makoto Naruse, Takashi Yatsui, Wataru Nomura, Tadashi Kawazoe, Masaki Aida, and Motoichi Ohtsu

Appl. Phys. Lett. 102, 071603 (2013); http://dx.doi.org/10.1063/1.4793233 (5 pages)

Online Publication Date: 20 February 2013

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Dressed-photon–phonon (DPP) etching is a disruptive technology in planarizing material surfaces because it completely eliminates mechanical contact processes. However, adequate metrics for evaluating the surface roughness and the underlying physical mechanisms are still not well understood. Here, we propose a two-dimensional hierarchical surface roughness measure, inspired by the Allan variance, that represents the effectiveness of DPP etching while conserving the original two-dimensional surface topology. Also, we build a simple physical model of DPP etching that agrees well with the experimental observations, which clearly shows the involvement of the intrinsic hierarchical properties of dressed photons, or optical near-fields, in the surface processing.
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81.65.Cf Surface cleaning, etching, patterning
63.20.dd Measurements
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Comparison of CsBr and KBr covered Cu photocathodes: Effects of laser irradiation and work function changes

Weidong He, Subramanian Vilayurganapathy, Alan G. Joly, Tim C. Droubay, Scott A. Chambers, Juan R. Maldonado, and Wayne P. Hess

Appl. Phys. Lett. 102, 071604 (2013); http://dx.doi.org/10.1063/1.4793214 (5 pages)

Online Publication Date: 20 February 2013

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Thin films of CsBr and KBr were deposited on Cu(100) to investigate photoemission properties of these potential photocathode materials. After prolonged laser ultraviolet irradiation photoemission, quantum efficiency increases by factors of 26 and 77 for KBr/Cu(100) and CsBr/Cu(100) photocathodes, respectively. Immediately following thin film deposition, a decrease in work function is observed, compared to bare Cu, in both cases. Quantum efficiency enhancements are attributed to the decrease in photocathode work function, and photo-induced processes that introduce defect states into the alkali halide bandgap. Our results suggest that KBr, a relatively stable alkali-halide, also has potential for photocathode applications.
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85.60.Ha Photomultipliers; phototubes and photocathodes

Tuning the carrier density of LaAlO3/SrTiO3 interfaces by capping La1−xSrxMnO3

Y. J. Shi, S. Wang, Y. Zhou, H. F. Ding, and D. Wu

Appl. Phys. Lett. 102, 071605 (2013); http://dx.doi.org/10.1063/1.4793576 (4 pages)

Online Publication Date: 22 February 2013

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We present a systematical study on the electronic transport properties of the insulating LaAlO3 (3 unit cells)/SrTiO3 interfaces capping with thin layers of La1−xSrxMnO3, whose formal polarization is continually tuned by Sr doping. When the Sr doping is lower than 2/3, the LaAlO3/SrTiO3 interfaces show metallic behaviors. The carrier mobility is almost independent on the Sr doping for metallic interface, indicating that the capping layer does not change the density of the oxygen vacancies and the interface intermixing. However, the sheet carrier densities monotonically decrease as increasing Sr doping, which is ascribed to the decrease of the La1−xSrxMnO3 formal polarization. These results strongly support the intrinsic mechanism of the polar catastrophe model and provide a new approach to tailor the interface states of complex oxide heterostructures.
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73.40.-c Electronic transport in interface structures
61.72.jd Vacancies
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