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Applied Physics Letters / Volume 102 / Issue 8 / SURFACES AND INTERFACES

Appl. Phys. Lett. 102, 081601 (2013); http://dx.doi.org/10.1063/1.4793518 (4 pages)

Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy

J. Houston Dycus1, Ryan M. White1, Jonathan M. Pierce2, Rama Venkatasubramanian2, and James M. LeBeau1

1Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
2Center for Solid State Energetics, RTI International, Research Triangle Park, North Carolina 27709, USA

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(Received 11 December 2012; accepted 11 February 2013; published online 25 February 2013)

Here, we report the atomic scale structure and chemistry of epitaxial Bi2Te3 thin films grown via metallorganic chemical vapor deposition on (001) GaAs substrates. Using aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM), we report an atomically abrupt interface spanned by a second phase. Further, we demonstrate that interpretation of HAADF STEM image intensities does not provide an unambiguous interface structure. Combining atomic resolution imaging and spectroscopy, we determine the identity of the interfacial species is found to be consistent with that of a bilayer of Ga–Te that terminates GaAs dangling bonds.

© 2013 American Institute of Physics

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KEYWORDS, PACS, and IPC

Keywords

bismuth compounds, dangling bonds, gallium arsenide, III-V semiconductors, interface structure, MOCVD, scanning-transmission electron microscopy, semiconductor epitaxial layers, semiconductor growth, semiconductor materials, vapour phase epitaxial growth

PACS

  • 68.35.Ct

    Interface structure and roughness

  • 68.47.Fg

    Semiconductor surfaces

  • 71.55.Eq

    III-V semiconductors

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

  • 68.55.ag

    Semiconductors

International Patent Classification (IPC)

  • C23C16/18

    From metallo-organic compounds

  • C30B23/02

    Epitaxial-layer growth

  • C30B25/00

    Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

  • C30B25/02

    Epitaxial-layer growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.4793518

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    References

    H. Cao, R. Venkatasubramanian, C. Liu, J. Pierce, H. Yang, M. Z. Hasan, Y. Wu, and Y. P. Chen, Appl. Phys. Lett. 101, 162104 (2012)APPLAB000101000016162104000001.

    R. Venkatasubramanian, T. Colpitts, B. O'Quinn, S. Liu, N. El-Masry, and M. Lamvik, Appl. Phys. Lett. 75, 1104 (1999)APPLAB000075000008001104000001.

    N. Jedrecy, R. Pinchaux, and M. Eddrief, Phys. Rev. B 56, 9583 (1997).

    D. O. Klenov and J. M. O. Zide, Appl. Phys. Lett. 99, 141904 (2011)APPLAB000099000014141904000001.


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