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Appl. Phys. Lett. 102, 093111 (2013); http://dx.doi.org/10.1063/1.4794843 (5 pages)

Origin of 1/f noise in graphene multilayers: Surface vs. volume

Guanxiong Liu1, Sergey Rumyantsev2,3, Michael S. Shur2, and Alexander A. Balandin1,4

1Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521, USA
2Center for Integrated Electronics and Department of Electrical, Computer and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA
3Ioffe Physical-Technical Institute, The Russian Academy of Sciences, St. Petersburg 194021, Russia
4Materials Science and Engineering Program, University of California – Riverside, Riverside, California 92521, USA

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(Received 28 December 2012; accepted 25 February 2013; published online 6 March 2013)

Low-frequency noise with the spectral density S(f)∼1/fγ (f is the frequency and γ ≈ 1) is a ubiquitous phenomenon, which hampers operation of many devices and circuits. A long-standing question of particular importance for electronics is whether 1/f noise is generated on the surface of electrical conductors or inside their volumes. Using high-quality graphene multilayers, we were able to directly address this fundamental problem of the noise origin. Unlike the thickness of metal or semiconductor films, the thickness of graphene multilayers can be continuously and uniformly varied all the way down to a single atomic layer of graphene—the actual surface. We found that 1/f noise becomes dominated by the volume noise when the thickness exceeds ∼7 atomic layers (∼2.5 nm). The 1/f noise is the surface phenomenon below this thickness. The obtained results are important for continuous downscaling of conventional electronics and for the proposed graphene applications in sensors and communications.

© 2013 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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    References

    J. B. Johnson, Phys. Rev. 26, 71 (1925).

    C. T. Sah and F. H. Hielscher, Phys. Rev. Lett. 17, 956 (1966).

    M. Celasco, F. Fiorillo, and A. Masoero, Phys. Rev. B 19, 1304 (1979).

    D. M. Fleetwood, J. T. Masden, and N. Giordano, Phys. Rev. Lett. 50, 450 (1983).

    N. M. Zimmerman, J. H. Scofield, J. V. Mantese, and W. W. Webb, Phys. Rev. B 34, 773 (1986).

    I. Calizo, I. Bejenari, M. Rahman, G. Liu, and A. A. Balandin, J. Appl. Phys. 106, 043509 (2009)JAPIAU000106000004043509000001.

    G. Liu, S. Rumyantsev, M. Shur, and A. A. Balandin, Appl. Phys. Lett. 100, 033103 (2012)APPLAB000100000003033103000001.

    G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur, and A. A. Balandin, Appl. Phys. Lett. 95, 033103 (2009)APPLAB000095000003033103000001.

    L. Pietronero, S. Strassler, H. R. Zeller, and M. J. Rice, Phys. Rev. Lett. 41, 763 (1978).

    A. Venugopal, L. Colombo, and E. M. Vogel, Appl. Phys. Lett. 96, 013512 (2010)APPLAB000096000001013512000001.

    K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 97, 143514 (2010)APPLAB000097000014143514000001.


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