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1 Dec 1967

Volume 11, Issue 11, pp. 333-363


PARAMETRIC AMPLIFICATION OF ULTRASHORT LASER PULSES

W. H. Glenn

Appl. Phys. Lett. 11, 333 (1967); http://dx.doi.org/10.1063/1.1755001 (3 pages) | Cited 8 times

Online Publication Date: 30 November 2004

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The parametric amplification of a short optical pulse, such as is produced by a mode‐locked laser, is treated. The pump signal is also a short optical pulse whose center frequency is twice that of the signal pulse. It is shown that the signal pulse undergoes considerable sharpening. The sharpening is ultimately limited by the mismatch in the group velocities of the pump and signal pulses.

METHOD FOR PRODUCTION OF BLAZED OPTICAL DIFFRACTION GRATINGS FROM SINGLE‐CRYSTAL MATERIALS

J. M. Blakely

Appl. Phys. Lett. 11, 335 (1967); http://dx.doi.org/10.1063/1.1755002 (3 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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A new technique for fabricating optical diffraction gratings of specified blaze angle is described. The method is based on the formation of a periodic, thermodynamically stable, faceted surface. This arises from variation in surface free energy with surface orientation.

HIGH‐OUTPUT POWERS AND LONG LIFETIMES OF SEALED‐OFF CO2 LASERS

W. J. Witteman

Appl. Phys. Lett. 11, 337 (1967); http://dx.doi.org/10.1063/1.1755003 (2 pages) | Cited 24 times

Online Publication Date: 30 November 2004

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Output powers up to 63 W∕m and lifetimes in excess of 1000 hr are obtained with sealed‐off CO2 lasers. The addition of 0.2 torr H2O or 0.2 torr H2 to the convential mixture of CO2, N2, and He is essential for obtaining these results. The influence of the observed OH radials on the extended lifetime is discussed.

NUCLEAR ULTRASONIC FAST PASSAGE

P. Averbuch, L. W. James, and R. J. Mahler

Appl. Phys. Lett. 11, 339 (1967); http://dx.doi.org/10.1063/1.1755004 (2 pages)

Online Publication Date: 30 November 2004

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An ultrasonic fast passage experiment is described and the small resulting 16% nuclear spin inversion is explained as an inability to obtain ideal experimental conditions.

ACOUSTIC NONLINEAR FREQUENCY MIXING DETECTED USING OPTICAL BRAGG DIFFRACTION

R. W. Dixon

Appl. Phys. Lett. 11, 340 (1967); http://dx.doi.org/10.1063/1.1755005 (5 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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Nonlinear acoustic sum and difference frequency generation has been observed in fused quartz using the technique of optical Bragg diffraction. The technique possesses significant advantages over direct acoustic detection and should be very useful in other studies of acoustic nonlinearities in optically transparent materials.

ABSOLUTE FREQUENCY MEASUREMENT OF THE 118.6‐μm WATER‐VAPOR LASER TRANSITION

L. Frenkel, T. Sullivan, M. A. Pollack, and T. J. Bridges

Appl. Phys. Lett. 11, 344 (1967); http://dx.doi.org/10.1063/1.1755006 (2 pages) | Cited 21 times

Online Publication Date: 30 November 2004

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The frequency of the 118.6‐μm water‐vapor laser transition has been measured as 2,527,952.8 MHz in a harmonic mixing experiment. Accuracy of several parts in 108 has been obtained by phase locking the klystron harmonic source to a tunable crystal oscillator and by centering the laser to the Lamb dip.

SPIKES IN THE LIGHT OUTPUT OF ROOM‐TEMPERATURE GaAs JUNCTION LASERS

R. Roldan

Appl. Phys. Lett. 11, 346 (1967); http://dx.doi.org/10.1063/1.1755007 (3 pages) | Cited 17 times

Online Publication Date: 30 November 2004

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A regular spiking pattern has been observed in the light output of GaAs injection lasers with a stripe geometry contact. Computer solutions to the rate equations involving the photon density and the inverted population are compared and found to be in good agreement with the experimental results. The rate equations are based on the assumption that a spatially inhomogeneous inversion exists along the resonator length.

SEARCH FOR RESONANCE BEHAVIOR IN THE MICROWAVE DIELECTRIC CONSTANT OF GaAs

K. S. Champlin, R. J. Erlandson, G. H. Glover, P. S. Hauge, and T. Lu

Appl. Phys. Lett. 11, 348 (1967); http://dx.doi.org/10.1063/1.1755008 (2 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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In a recent communication, Larrabee and Hicinbothem presented measurements of the dielectric constant of high‐resistivity GaAs showing a region of anomalous dispersion centered at 9.5 GHz. We have made similar measurements over the frequency range between 8.5 and 70 GHz but have not obtained their results. Our measurements indicate that the relative dielectric constant is independent of frequency in the microwave range and equal to 12.95 ± .10 at room temperature.

ON THE DIELECTRIC CONSTANT OF GaAs AT MICROWAVE FREQUENCIES

N. Braslau

Appl. Phys. Lett. 11, 350 (1967); http://dx.doi.org/10.1063/1.1755009 (2 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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The dielectric constant of GaAs in the range 1.9–13 GHz has been determined from measurements of the fringing capacitance of bulk samples terminating a coaxial line. There is no indication of a large deviation from the low‐frequency value recently reported by Larrabee and Hicinbothem, although there may be a small resonance effect near 10 GHz.

THE DIELECTRIC CONSTANT OF GaAs AT MICROWAVE AND MILLIMETER WAVE FREQUENCIES

Stan Jones and Shing Mao

Appl. Phys. Lett. 11, 351 (1967); http://dx.doi.org/10.1063/1.1755010 (3 pages) | Cited 8 times

Online Publication Date: 30 November 2004

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The dielectric constant of Cr‐doped semi‐insulating GaAs has been measured from 4 to 40 GHz. Contradictory to the anomalous variation in this range reported by R. D. Larabee and W. A. Hicinbothem, Jr., for oxygen‐doped S‐I GaAs, no frequency dispersion was observed.

DIELECTRIC CONSTANT AND LOSS TANGENT OF SEMI‐INSULATING GaAs AT MICROWAVE FREQUENCIES

C. B. Rogers, G. H. B. Thompson, and G. R. Antell

Appl. Phys. Lett. 11, 353 (1967); http://dx.doi.org/10.1063/1.1755011 (2 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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The dielectric constant of gallium arsenide has been measured over the frequency range around 9.5 GHz where a resonance has been reported. No evidence of an appreciable variation in dielectric constant was observed. An accurate measurement at 9.4 GHz gave a dielectric constant of 12.35 and a loss tangent of 5.6 × 10−4.

AN EPR STUDY OF THE EFFECT OF SUBSTRATE ORIENTATION ON VAPOR‐GROWN GaP

R. C. Taylor and R. S. Title

Appl. Phys. Lett. 11, 355 (1967); http://dx.doi.org/10.1063/1.1755012 (3 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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The results of EPR and resistivity measurements on vapor‐grown GaP are discussed. The study shows that the appearance of Fe3+ EPR signals and the resistivity values are dependent on substrate orientation. A model based on the formation of Ga vacancies during growth is proposed to account for the observations.

CESIUM‐GaAs SCHOTTKY BARRIER HEIGHT

John J. Uebbing and Ronald L. Bell

Appl. Phys. Lett. 11, 357 (1967); http://dx.doi.org/10.1063/1.1755013 (2 pages) | Cited 11 times

Online Publication Date: 30 November 2004

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The Schottky barrier height at the interface of cesium metal and vacuum‐cleaved p‐type GaAs has been found to be 0.63 ± 0.03 eV. These measurements were made photovoltaically at 80°K and indicate that a heavy coverage of cesium leaves the surface roughly intrinsic.

IMAGING AND STORAGE WITH A UNIFORM MOS STRUCTURE

R. J. Phelan and J. O. Dimmock

Appl. Phys. Lett. 11, 359 (1967); http://dx.doi.org/10.1063/1.1755014 (3 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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Radiation sensitive characteristics of a uniform InSb—metal‐oxide‐semiconductor (MOS) structure have been used to detect images. By rapid optical scanning this structure with visible light of 0.63 μ we have detected infrared images due to 5‐μ radiation. In addition information can be read‐in and stored (or ``photographed'') by using 1‐μ radiation, nondestructively read‐out with 5‐μ radiation, and erased with 0.25‐μ radiation.

THE WORK FUNCTIONS OF CESIUM ON THE (100) AND (110) ORIENTED FACES OF TUNGSTEN SINGLE CRYSTALS

T. J. Lee, B. H. Blott, and B. J. Hopkins

Appl. Phys. Lett. 11, 361 (1967); http://dx.doi.org/10.1063/1.1755015 (3 pages) | Cited 12 times

Online Publication Date: 30 November 2004

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Work‐function measurements have been made at room temperature, using the vibrating capacitor technique, on (110) and (100) oriented tungsten single‐crystal surfaces both clean and covered with cesium. After complete cesiation the work functions of the two surfaces were, respectively, 2.06 ± 0.01 eV and 1.82 ± 0.01 eV. On the basis of a model involving epitaxial growth of the cesium and a doubling of the lattice constant, the work‐function differences between the two surfaces, clean and cesiated, are found to agree well with the predictions of Smoluchowski. Comparison of the present result on the (110) plane, covered with a monolayer of cesium, with a published value for a thick film of cesium indicates that there may be very little contribution to the work function from atoms in the solid other than those in the outermost atomic layer.
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