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15 Dec 1967

Volume 11, Issue 12, pp. 365-399


A COMPARISON OF THE HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP‐III AND ‐V ELEMENTS IN Si AND Ge

J. W. Mayer, J. A. Davies, and L. Eriksson

Appl. Phys. Lett. 11, 365 (1967); http://dx.doi.org/10.1063/1.1728214 (3 pages) | Cited 11 times

Online Publication Date: 30 November 2004

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The orientation dependence of the backscattered yield of 1.0‐MeV helium ions has been used to determine the lattice location of several group‐III and group‐V elements implanted at elevated temperatures in Si and Ge. We find that for the slower diffusants, i.e. group‐V elements in Si and group III in Ge, a considerably higher fraction is located on substitutional sites than for the faster diffusants. The concentration of Sb and Bi on substitutional lattice sites can exceed the equilibrium solubility by at least an order of magnitude. For In and Tl in Si, we find equal numbers of ions on the 〈111〉 interstitial lattice sites and on the substitutional lattice sites which suggest that some sort of pairing occurs between interstitial and substitutional impurities; again, the substitutional content can exceed the equilibrium solubility limit by large factors.

SPIN AND ACOUSTIC BRAGG DIFFRACTION IN LONGITUDINAL MAGNETOELASTIC WAVES

B. A. Auld and D. A. Wilson

Appl. Phys. Lett. 11, 368 (1967); http://dx.doi.org/10.1063/1.1728215 (3 pages) | Cited 8 times

Online Publication Date: 30 November 2004

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Infrared Bragg diffraction from the spin and acoustic components of a longitudinal magnetoelastic wave has been observed as a function of θe, the angle between the bias field and the magnetoelastic wave vector. The two diffraction components are identified by the polarization of the diffracted beam, and reasonable agreement with theory is obtained. Nonlinear effects are observed when θe is greater than 50°.

AN EXPERIMENT ON THE EFFECT OF FIELDS ON DIFFUSION

R. J. Jaccodine

Appl. Phys. Lett. 11, 370 (1967); http://dx.doi.org/10.1063/1.1728216 (3 pages)

Online Publication Date: 30 November 2004

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The electric field that results from a high concentration diffusion is used to modify the penetration depth of another diffusion. This effect can be designed to overcome the usual ``push out'' effect in an NPN silicon transistor. In extreme cases, the base can be modified to the extent that a ``sucked in'' configuration results.

EFFECT OF COMPRESSIVE UNIAXIAL STRESS ON HIGH FIELD DOMAINS IN n‐TYPE Ge

John E. Smith and James C. McGroddy

Appl. Phys. Lett. 11, 372 (1967); http://dx.doi.org/10.1063/1.1728217 (3 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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The effect of compressive uniaxial stress on the threshold field for nucleation of high field domains in n‐type Ge at 27°K has been measured. The increase in threshold field is approximately quadratic in stress and is about 15% for a stress of 104 kg∕cm2 applied along a 〈100〉 direction parallel to the current and about 37% for a stress of 104 kg∕cm2 applied along a 〈100〉 perpendicular to the current. These results indicate that, while in a strong electric field the 〈110〉 valleys are occupied at high stresses, transfer of electrons to these valleys is not the cause of bulk negative differential conductivity in n‐type Ge.

MICROWAVE EMISSION DURING PLASMA FORMATION IN InSb

R. G. Van Welzenis and J. G. A. M. Van Den Dries

Appl. Phys. Lett. 11, 374 (1967); http://dx.doi.org/10.1063/1.1728218 (4 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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X‐band microwave emission from n‐type InSb during avalanche plasma formation at 77°K is reported. A magnetic field is not required.

OBSERVATION OF THE SPECTRUM OF MICROWAVE RADIATION SCATTERED FROM A NONEQUILIBRIUM LIQUID

M. Iannuzzi

Appl. Phys. Lett. 11, 377 (1967); http://dx.doi.org/10.1063/1.1728219 (2 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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Measurements of the spectrum of microwave radiation scattered from a nonequilibrium liquid (CCl4 at 71°C) are presented. It is shown that the mean drift velocities of the refractive index inhomogeneities responsible for the scattering can be measured. The experimental results are consistent with the theory of wave propagation in a turbulent medium.

EMISSION SPECTRUM OF RHODAMINE B DYE LASERS

T. F. Deutsch, M. Bass, P. Meyer, and S. Protopapa

Appl. Phys. Lett. 11, 379 (1967); http://dx.doi.org/10.1063/1.1728220 (3 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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The laser emission spectra of flash‐lamp—pumped solutions of rhodamine B in ethanol were examined. A ``hole,'' located at 6261 Å, is seen in the laser emission spectra, but not in the fluorescence spectra. There is no absorption of the unexcited molecules at this wavelength and so the appearance of the hole is tentatively attributed to excited state absorption.

NONCOLLINEAR PARAMETRIC SCATTERING OF VISIBLE LIGHT

Douglas Magde, Richard Scarlet, and Herbert Mahr

Appl. Phys. Lett. 11, 381 (1967); http://dx.doi.org/10.1063/1.1728221 (3 pages) | Cited 11 times

Online Publication Date: 30 November 2004

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Experimental observations of noncollinear parametric interactions in ADP pumped by 3472‐Å laser light are reported for a wide variety of signal and idler frequencies, crystal orientations, and observation directions. The results provide the first confirmation of the predictions of newly extended theory.

EVIDENCE OF EXCESS SILICON IN REACTIVELY SPUTTERED SILICON NITRIDE FILMS

L. F. Cordes

Appl. Phys. Lett. 11, 383 (1967); http://dx.doi.org/10.1063/1.1728222 (3 pages) | Cited 14 times

Online Publication Date: 30 November 2004

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Results of etch rate, index of refraction, uv transmission, and dc conductivity measurements made on reactively sputtered Si3N4 films are compared with results of similar measurements made on pyrolytically deposited Si3N4 films. The observed differences in the results indicate that reactively sputtered films contain excess Si. Heating the sputtered films in vacuum, N2, or A changes the observed properties. The changes are interpreted as being due to the reaction of some of the excess Si with trapped N2 in the films.

HOT ELECTRON RELAXATION TIMES IN TWO‐VALLEY SEMICONDUCTORS AND THEIR EFFECT ON BULK‐MICROWAVE OSCILLATORS

P. Das and R. Bharat

Appl. Phys. Lett. 11, 386 (1967); http://dx.doi.org/10.1063/1.1728223 (3 pages) | Cited 12 times

Online Publication Date: 30 November 2004

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The momentum and energy relaxation times of a two‐valley semiconductor are calculated as functions of the electron temperatures in different valleys. From the expression for the small signal microwave current under hot electron conditions, the upper frequency limit of the bulk‐microwave devices is estimated.

CARRIER MOBILITY IN CdF2

E. A. Lebedev, Z. Frukacz, and T. Niemyski

Appl. Phys. Lett. 11, 388 (1967); http://dx.doi.org/10.1063/1.1728224 (1 page)

Online Publication Date: 30 November 2004

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The carrier mobility in monocrystalline CdF2 was investigated. It was proven that only electron mobility was measured, and exponential rise of mobility with temperature was obtained.

INFRARED QUANTUM COUNTER ACTION IN Ho‐DOPED CRYSTALS

J. G. Gualtieri, G. P. DeLhery, T. R. AuCoin, and J. R. Pastore

Appl. Phys. Lett. 11, 389 (1967); http://dx.doi.org/10.1063/1.1728225 (3 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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Infrared quantum counter action of Ho3+ in CaWO4, SrWO4, NaLa(WO4)2, CaMoO4, CdF2, and YAG single crystals is reported for the first time. A new two‐step excitation is also reported for Ho3+ in CaF2. Total quantum efficiencies were experimentally calculated for some of the stronger processes, and one of these is compared to a theoretical estimate for the internal quantum efficiency.

SINGLE‐FREQUENCY OPERATION OF THE ARGON‐ION LASER AT 5145 Å

J. M. Forsyth

Appl. Phys. Lett. 11, 391 (1967); http://dx.doi.org/10.1063/1.1728226 (4 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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A simple technique for obtaining highly stable, high‐power single‐mode emission from an argon‐ion laser at 5145 Å is described. The technique relies upon, among other factors, the simultaneous oscillation of the 4880 Å transition. We have observed that the spectral output envelope of the laser emission at either 4880 Å or 5145 Å is noticeably modified when both wavelengths oscillate at the same time.

TWO‐WAVELENGTH INTERFEROMETRY OF A LASER‐PRODUCED CARBON PLASMA

Charles D. David

Appl. Phys. Lett. 11, 394 (1967); http://dx.doi.org/10.1063/1.1728227 (3 pages) | Cited 8 times

Online Publication Date: 30 November 2004

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Experimental determination in a time‐resolved manner of the number densities of free electrons and neutral atoms in a carbon plasma is obtained with two‐wavelength interferometry. The plasma is produced by a Q‐switched ruby laser with a peak power of 100 MW, and a 3‐W argon‐ion laser is used as the interferometer light source. A maximum free electron density of 1.6 × 1019 cm−3 and a maximum neutral density of 1.6 × 1020 cm−3 are observed.

A HIGH‐DENSITY FIELD‐EMITTING SEMICONDUCTOR CATHODE PRODUCED BY A VOLTAGE‐BREAKDOWN PROCESS

Takao Utsumi and G. C. Dalman

Appl. Phys. Lett. 11, 397 (1967); http://dx.doi.org/10.1063/1.1728228 (3 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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This Letter describes some characteristics of a new high‐density field‐emitting cathode which has possible applications in electron guns for cathode‐ray tubes and other electronic devices. The cathode consists of a large array of micron‐size emitting projections on a smooth semiconductor surface. These projections are generated initially by a voltage‐breakdown process and appear to be maintained during operation by a regenerative process. Electron emission densities as high as 1.0 ∼ 2.0 A∕cm2 have been attained from an area of 10−2 cm2 of either germanium or silicon. An experimental cathode‐ray tube was successfully constructed using this cathode.
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Erratum: Atmospheric Absorption of CO2 Laser Radiation

John C. Stephenson, William A. Haseltine, and C. Bradley Moore

Appl. Phys. Lett. 11, 399 (1967); http://dx.doi.org/10.1063/1.1728229 (1 page) | Cited 1 time

Online Publication Date: 30 November 2004

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