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1 Aug 1967

Volume 11, Issue 3, pp. 73-110


EFFECT OF MODE BEATING IN LASER‐PRODUCED GAS BREAKDOWN

David C. Smith and Richard G. Tomlinson

Appl. Phys. Lett. 11, 73 (1967); http://dx.doi.org/10.1063/1.1755041 (3 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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Experiments have been carried out which show that the electrical breakdown of gases by optical frequency radiation is independent of the instantaneous intensity fluctuations arising from the interaction of modes present in laser radiation. Gas breakdown thresholds, determined with a single‐mode ruby laser and a phase‐locked neodymium laser are in substantial agreement with published threshold data for conventional, multiple‐mode laser radiation. It was thus determined that the breakdown threshold does not depend upon short term temporal and spatial fluctuations of the power density.

THE SOLID‐PHASE TRANSFORMATION IN HAFNIUM

Glen N. Bates and George Barnes

Appl. Phys. Lett. 11, 75 (1967); http://dx.doi.org/10.1063/1.1755042 (3 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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Field‐electron emission patterns below and above the solid‐phase transformation temperature in hafnium are presented. The transformation temperature was found to be 2030°K confirming results obtained by other methods.

DIGITAL IMAGE FORMATION FROM ELECTRONICALLY DETECTED HOLOGRAMS

J. W. Goodman and R. W. Lawrence

Appl. Phys. Lett. 11, 77 (1967); http://dx.doi.org/10.1063/1.1755043 (3 pages) | Cited 211 times

Online Publication Date: 30 November 2004

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In high precision holographic imagery of weak objects of small angular subtense, electronic detection and digital image formation have distinct advantages. Experiments with a vidicon detector and a PDP‐6 computer have yielded reconstructed images of good quality with computation times of five minutes.

THE FARADAY EFFECT AT LOW TEMPERATURES IN TERBIUM ALUMINA SILICATE GLASS

Melvin Daybell, W. C. Overton, and H. L. Laquer

Appl. Phys. Lett. 11, 79 (1967); http://dx.doi.org/10.1063/1.1755044 (3 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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The Faraday effect has been studied in a high Verdet‐constant terbia‐alumina‐silicate glass containing 58% Tb2O3 by weight at a number of temperatures down to 2.08°K using the 6328 Å light from a helium‐neon laser. The glass is found to be antiferromagnetic with a Curie temperature of ‐1.16°K. At 2.08°K the observed rotation as a function of H∕T fits the Becquerel equation θ = A tanh (μeH∕kT) + BH, where μe is 3.5 Bohr magnetons. Because of this small Curie temperature the low‐field Verdet constant above liquid nitrogen temperatures follows the simple Curie law within experimental error.

EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY

H. Rupprecht, J. M. Woodall, and G. D. Pettit

Appl. Phys. Lett. 11, 81 (1967); http://dx.doi.org/10.1063/1.1755045 (3 pages) | Cited 42 times

Online Publication Date: 30 November 2004

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Efficient visible light emitting diodes have been fabricated from Ga1‐xAlxAs. Epitaxial layers were obtained by a modified solution growth technique. External quantum efficiencies of up to 3.3% have been measured at room temperature on diodes, which had their emission at 1.70 eV. The switching time for the light emission at 300°K was measured to be 60 nsec.

CARRIER GENERATION AND SWITCHING PHENOMENA IN n—GaAs DEVICES

H. W. Thim and S. Knight

Appl. Phys. Lett. 11, 83 (1967); http://dx.doi.org/10.1063/1.1755046 (3 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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By measuring the steady‐state potential distribution in n—GaAs samples with ohmic contacts, very high electric fields have been found near the anode contacts. In samples with n ⋅ L (carrier concentration × sample length) products greater than 1012 cm‐2, switching from the Gunn mode to a high current, lower (constant) voltage state takes place along with the appearance of a high field at the anode. In samples with n ⋅ L products less than 1012 cm‐2 the buildup of the high field is accompanied by a sudden increase in current. These high currents are due to carrier generation in a narrow region near the anode.

ELECTROMIGRATION EFFECTS IN ALUMINUM FILM ON SILICON SUBSTRATES

J. K. Howard and R. F. Ross

Appl. Phys. Lett. 11, 85 (1967); http://dx.doi.org/10.1063/1.1755047 (3 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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A new nondestructive method is reported to investigate electromigration‐induced void formation in aluminum stripes on silicon substrates. X‐ray topography and optical microscopy are employed to characterize void nucleation at or below the film surface. Results are presented to show the correlation between x‐ray and optical images of void structures in an aluminum stripe after dc current flow.

PASSIVE Q‐SWITCHING OF A CO2 LASER

O. R. Wood and S. E. Schwarz

Appl. Phys. Lett. 11, 88 (1967); http://dx.doi.org/10.1063/1.1755048 (2 pages) | Cited 35 times

Online Publication Date: 30 November 2004

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Passive Q‐switching of a CO2☒N2☒He laser has been obtained, using SF6 gas as the saturable absorber. Peak power is 1 kW, in what appears to be a single transverse mode. This is 200 times the CW level for the same configuration and one‐fifth that obtained with a mechanical Q switch. Pulse rates are in the range 103 to 104 pulses per sec. Operation is on a single vibrational‐rotational line, unlike the case of CW operation.

BROAD‐BAND LIGHT AMPLIFICATION IN ORGANIC DYES

M. Bass and T. F. Deutsch

Appl. Phys. Lett. 11, 89 (1967); http://dx.doi.org/10.1063/1.1755049 (3 pages) | Cited 17 times

Online Publication Date: 30 November 2004

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Two organic dyes previously used as liquid lasers, DTTC and cryptocyanine, have been used as broad‐band (>300 Å) pulsed light amplifiers in the 7000–8500 Å range. If the input frequency is close to the frequencies of the usual laser oscillations, the latter are quenched and the energy transferred to the frequency being amplified.

SOLUBILITY EFFECTS OF IMPLANTED IONS IN SEMICONDUCTORS

O. J. Marsh, J. W. Mayer, G. A. Shifrin, and D. Jamba

Appl. Phys. Lett. 11, 92 (1967); http://dx.doi.org/10.1063/1.1755050 (3 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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Hall effect and sheet resistivity measurements combined with layer removal techniques indicated carrier concentrations for 20‐kV antimony implants into silicon that exceed the thermal equilibrium solubility. Annealing caused the carrier concentration to decrease toward solubility values. Supersaturation effects were not observed for gallium implants. For samples annealed at 800 to 900°C, the concentration of carriers increased linearly with implanted dose and leveled off at a value close to the thermal equilibrium solubility.

TRITIUM‐LABELED FIELD‐INDUCED PROTON TRANSPORT IN SiO2 FILMS

S. R. Hofstein

Appl. Phys. Lett. 11, 95 (1967); http://dx.doi.org/10.1063/1.1755051 (2 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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Tritiated ethanol is adsorbed on the surface of silicon oxide, the oxide is metallized to form an MOS capacitor, and an electric field is applied at elevated temperature to generate ion injection into the oxide film. It is shown that during positive bias‐temperature stress, protons, derived from the hydrogens of the ethanol, are transported to the oxide‐silicon interface, and that sodium ion transport (examined via neutron activation analysis) is negligible.

SIX dB∕CM SINGLE‐PASS GAIN AT 7229 Å IN LEAD VAPOR

W. T. Silfvast and J. S. Deech

Appl. Phys. Lett. 11, 97 (1967); http://dx.doi.org/10.1063/1.1755052 (3 pages) | Cited 20 times

Online Publication Date: 30 November 2004

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A method has been developed to measure the single‐pass gain of superradiant high‐gain pulsed lasers by comparing the intensities of single‐pass and double‐pass radiation. This method is used on the 7229 Å transition in Pb I and gives a maximum single‐pass gain of 63 dB in a 10 cm effective length of lead vapor. The gain is confirmed by line‐narrowing measurements and by power output measurements that are related to the theoretical intensities.

HIGH‐GAIN LASER LINES IN NOBLE GASES

O. Andrade, M. Gallardo, and K. Bockasten

Appl. Phys. Lett. 11, 99 (1967); http://dx.doi.org/10.1063/1.1755053 (2 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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Twenty‐four superradiant lines from a pulsed discharge in neon, argon, krypton, and xenon are reported in the wavelength region 8000–29,000 Å. All the lines have been classified as transitions in the neutral spectra. The upper levels are expected to be populated by electron impact or by cascade processes.

ORIENTED GROWTH OF THE INTERFACIAL PtSi LAYER OR BETWEEN Pt AND Si

T. Kawamura, D. Shinoda, and H. Muta

Appl. Phys. Lett. 11, 101 (1967); http://dx.doi.org/10.1063/1.1755035 (3 pages) | Cited 24 times

Online Publication Date: 30 November 2004

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The oriented growth of the interfacial PtSi layer between Pt and Si is described. Sputtered Pt onto the (111) Si wafer reacts with Si above 600°C to form PtSi. The interfacial PtSi has the preferred orientation characteristic of the temperature of heat treatment, varying the orientation from [101] at 600°C and 700°C, through [121] at 750°C, to [001] at 800°C. A possible growth mechanism of the interfacial PtSi is proposed on the basis of the atomic layer sequence of each crystallographic direction.

OPTICAL PATTERNS OF THERMALLY SELF‐DEFOCUSED LIGHT

W. R. Callen, B. G. Huth, and R. H. Pantell

Appl. Phys. Lett. 11, 103 (1967); http://dx.doi.org/10.1063/1.1755036 (3 pages) | Cited 21 times

Online Publication Date: 30 November 2004

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In this Letter we discuss the observation of a pattern of concentric annuli formed as a result of thermal effects upon a light beam. To our knowledge, this is the first time such patterns have been reported.
When a beam of light passes through an absorbing medium whose refractive index decreases as a function of temperature, the medium behaves as a negative lens. Gordon et al.1 observed this phenomenon by placing a cell containing an absorbing liquid between the mirrors of a helium‐neon laser. The absorption constants for several liquids with very low absorbencies have been determined using this effect.2 Rieckhoff3 measured the increase in the diameter of a light beam that passed through a thermal self‐defocusing liquid placed external to the laser inter‐ferometer. Recently Leite et al.4 demonstrated that this effect may be used as a power limiting device.

REFLECTIVITY THICKNESS CORRECTIONS FOR SILICON DIOXIDE FILMS ON SILICON

R. A. Wesson, H. W. Young, and W. A. Pliskin

Appl. Phys. Lett. 11, 105 (1967); http://dx.doi.org/10.1063/1.1755037 (2 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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The interference of light can be used to determine the thickness of thin silicon dioxide films on silicon. This Letter contains corrections to the standard interference formula due to: (1) phase shift at the silicon dioxidesilicon interface and (2) the reflectivity variation at the air‐silicon dioxide and silicon dioxide‐silicon interfaces. These corrections are calculated as a function of wavelength, order, incident angle, and polarization.

AN EXCITATION MECHANISM FOR THE A+ LASER

Said H. Koozekanani

Appl. Phys. Lett. 11, 107 (1967); http://dx.doi.org/10.1063/1.1755038 (2 pages) | Cited 4 times

Online Publication Date: 30 November 2004

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Direct excitation from the metastable 3p5‐4s state of A I to 3p4‐4p upper laser state of A II is compared with the two‐step excitation from the same metastable state.

A LEED STUDY OF THE HOMOEPITAXIAL GROWTH OF THICK SILICON FILMS

R. N. Thomas and M. H. Francombe

Appl. Phys. Lett. 11, 108 (1967); http://dx.doi.org/10.1063/1.1755039 (3 pages) | Cited 38 times

Online Publication Date: 30 November 2004

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An in‐situ low‐energy electron diffraction (LEED) study has been made of the homoepitaxial growth in ultrahigh vacuum of silicon films up to several microns thickness. During growth on (111) at temperatures between 600 and 1000°C the initial Si(111)‐7 surface structure of the substrate is retained by the epitaxial film. Below 600°C a mixed Si(111)‐7 and Si(111)‐5 structure develops in the initial stages of growth and for a given temperature, is preserved as epitaxy proceeds. At temperatures lower than 350°C the LEED data indicate that the film structure becomes amorphous. Epitaxy on (100) occurs at temperatures down to about 300°C. In this case the initial Si(100)‐2 surface structure is retained by the film except in the range 650 to 700°C, where a new ordered form of the Si(100)‐2 structure is generated.
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Erratum: Analysis of Sb‐Implanted Silicon by (p, p) Scattering and Hall Measurements

L. Eriksson, J. A. Davies, J. Denhartog, J. W. Mayer, O. J. Marsh, and R. Mankarious

Appl. Phys. Lett. 11, 110 (1967); http://dx.doi.org/10.1063/1.1755040 (1 page)

Online Publication Date: 30 November 2004

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