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15 Aug 1967

Volume 11, Issue 4, pp. 111-142


CURRENT RUNAWAY AND AVALANCHE EFFECTS IN n—CdTe

M. R. Oliver, A. L. McWhorter, and A. G. Foyt

Appl. Phys. Lett. 11, 111 (1967); http://dx.doi.org/10.1063/1.1755054 (3 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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In addition to Gunn oscillations, n—CdTe exhibits a current runaway which is accompanied by light‐emitting filaments reaching from contact to contact. The results of diagnostic experiments suggest a current‐density controlled differential negative resistivity caused by a bulk avalanche of hole‐electron pairs. The avalanche is probably initiated by high‐field Gunn domains, but the mechanism that sustains the runaway is not understood.

EXCITED STATE ABSORPTION IN A SATURABLE ABSORBER

W. E. K. Gibbs

Appl. Phys. Lett. 11, 113 (1967); http://dx.doi.org/10.1063/1.1755055 (3 pages) | Cited 17 times

Online Publication Date: 30 November 2004

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Measurements carried out on chloroaluminum phthalocyanine under ruby laser excitation showed that the observed blue fluorescence originated in the second excited singlet state and was excited by transitions from the first excited singlet state. The upper limit of the excitation cross section of this transition was determined and shown to be without effect on the performance of this absorber as a passive Q switch. Two‐photon absorption in the chloronaphthalene solvent was also detected.

A MAGNETOELASTIC TWO‐PORT CONFIGURATION IN YIG

G. E. Bennett and F. A. Olson

Appl. Phys. Lett. 11, 115 (1967); http://dx.doi.org/10.1063/1.1755056 (3 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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Two‐port magnetoelastic delay performance has been obtained at 1300 MHz in an axially magnetized, [100] oriented YIG rod by injecting longitudinal elastic waves along a [001] axis near the rod end. The polished rod end‐face, beveled 28.1° with respect to the rod axis, converts this elastic beam into a linearly polarized shear wave column which propagates down the rod axis. One circularly polarized component of this wave undergoes conventional magnetoelastic conversion and detection to provide the second port.

SINGLE‐CRYSTAL SELENIUM FILMS

C. H. Griffiths and H. Sang

Appl. Phys. Lett. 11, 118 (1967); http://dx.doi.org/10.1063/1.1755057 (3 pages) | Cited 12 times

Online Publication Date: 30 November 2004

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Thin continuous single‐crystal films of trigonal selenium have been obtained by epitaxial growth from the vapor phase on the (1010) and (0001) faces of tellurium. Transmission electron diffraction and x‐ray diffraction measurements indicated the normal trigonal structure and parallel orientation of the selenium on the tellurium. Lattice constants were identical with those found in bulk material.

PHASE SEPARATION IN THE Cu☒Ni☒Fe SYSTEM; MÖSSBAUER EFFECT EVIDENCE AGAINST DECOMPOSITION BY THE ``SPINODAL MECHANISM''

A. Nagarajan and P. A. Flinn

Appl. Phys. Lett. 11, 120 (1967); http://dx.doi.org/10.1063/1.1755058 (3 pages) | Cited 8 times

Online Publication Date: 30 November 2004

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Mössbauer spectroscopy has been used to investigate the early stages of phase separation in the Cu☒Ni.7Fe.3 pseudobinary system. Our results indicate that new phase of composition close to the equilibrium composition is formed early in the decomposition, and grows in amount during transformation. The type of composition fluctuation predicted on the basis of the ``spinodal mechanism'' appears to be absent, and the qualitative nature of the transformation appears to be the same for temperatures above and below the spinodal.

THE NONLINEAR THIRD ORDER DIELECTRIC SUSCEPTIBILITY COEFFICIENTS OF GASES AND OPTICAL THIRD HARMONIC GENERATION

W. G. Rado

Appl. Phys. Lett. 11, 123 (1967); http://dx.doi.org/10.1063/1.1755059 (3 pages) | Cited 51 times

Online Publication Date: 30 November 2004

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The nonresonant third order nonlinear dielectric susceptibility coefficients of several gases were measured in a four wave mixing experiment. These coefficients were used to calculate the amount of third harmonic radiation generated in gases in a focused laser beam. No signal distinguishable from noise was ever seen from gases, although more than 104 times the minimum detectable signal was predicted.

HETERODYNE PERFORMANCE OF MERCURY DOPED GERMANIUM

Carl J. Buczek and Gerald S. Picus

Appl. Phys. Lett. 11, 125 (1967); http://dx.doi.org/10.1063/1.1755060 (2 pages) | Cited 6 times

Online Publication Date: 30 November 2004

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Using optical heterodyne techniques, the response time of a mercury doped germanium detector operated at 4.2°K has been found to be 3.3 nsec and the signal‐to‐noise ratio measured at 15 MHz is within 4 dB of the quantum noise limit.

HOT CARRIER CURRENT OSCILLATIONS IN n‐TYPE GERMANIUM

Helmut Heinrich and David K. Ferry

Appl. Phys. Lett. 11, 126 (1967); http://dx.doi.org/10.1063/1.1755061 (3 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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The observation of current oscillations from n‐type germanium at electric fields sufficient to produce hot electron current saturation is reported. These oscillations differ from previous reports in that neither a constricted geometry nor avalanche injection from contacts are required.

ASSESSMENT OF LITHIUM‐META‐NIOBATE FOR NONLINEAR OPTICS

J. E. Midwinter

Appl. Phys. Lett. 11, 128 (1967); http://dx.doi.org/10.1063/1.1755062 (3 pages) | Cited 19 times

Online Publication Date: 30 November 2004

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Techniques for evaluating the quality of single crystals of LiNbO3 by a Twyman‐Green interferometer and between crossed polarizers are described and the quality coefficients so obtained are compared with the second‐harmonic generation performance measured using a 1.084‐μ gas laser. The variations in quality are interpreted in terms of gradients of chemical composition, and a method for partially correcting them is described.

THE ORIENTATION OF Cu2S FORMED ON SINGLE CRYSTAL CdS

Joseph Singer and Paul A. Faeth

Appl. Phys. Lett. 11, 130 (1967); http://dx.doi.org/10.1063/1.1755063 (3 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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Extensive penetration by Cu+ into CdS, a reaction used to make the photovoltaic cell Cu2S upon CdS, produces single crystal Cu2S as chalcocite.

DONOR SURFACE STATES AND BULK ACCEPTOR TRAPS IN SILICON‐ON‐SAPPHIRE FILMS

F. P. Heiman

Appl. Phys. Lett. 11, 132 (1967); http://dx.doi.org/10.1063/1.1755064 (3 pages) | Cited 10 times

Online Publication Date: 30 November 2004

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It is proposed that the appearance of donor surface states at the silicon‐sapphire interface, after heating in moisture or hydrogen, is due to activation of impurities absorbed in the thin glassy layer which exists between the silicon and sapphire. This layer forms during deposition of the silicon films in a hydrogen atmosphere by reduction of the surface layer of sapphire, releasing aluminum into the silicon film. The photoconductivity of silicon‐on‐sapphire for photon energy below band gap energy is due to acceptor traps located more than 0.65 eV above the valence band.

A NEW MECHANISM FOR STACKING FAULT GENERATION IN EPITAXIAL GROWTH OF SILICON IN ULTRA‐HIGH VACUUM

R. N. Thomas and M. H. Francombe

Appl. Phys. Lett. 11, 134 (1967); http://dx.doi.org/10.1063/1.1755065 (3 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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The homo‐epitaxial growth of thick films of silicon, grown by sublimation in vacuo of about 10‐10 torr, has been investigated by means of low‐energy electron diffraction (LEED) and transmission electron microscopy. In films grown on (111), stacking faults appear at substrate temperatures below 600°C, and increase in density with further decrease in growth temperature. Their appearance is correlated with the development of a mixed Si(111)‐5, Si(111)‐7 surface structure in this temperature range. It is proposed that these faults are generated by a new mechanism, whereby their nucleation is attributed to the formation of Si(111)‐5 domains on the initial Si(111)‐7 substrate surface.

ROWS OF DISLOCATION LOOPS IN ALUMINIUM IRRADIATED BY ALUMINIUM IONS

L. Henriksen, A. Johansen, J. Koch, H. H. Andersen, and R. M. J. Cotterill

Appl. Phys. Lett. 11, 136 (1967); http://dx.doi.org/10.1063/1.1755066 (3 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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Single‐crystal aluminium specimens, irradiated with 50‐keV aluminium ions, contain dislocation loops that are arranged in regular rows along 〈 110 〉 directions.

THE DIRECT ABSORPTION EDGE IN COVALENT SOLIDS

David Redfield and Martin A. Afromowitz

Appl. Phys. Lett. 11, 138 (1967); http://dx.doi.org/10.1063/1.1755067 (3 pages) | Cited 59 times

Online Publication Date: 30 November 2004

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Comparative measurements of the absorption edge of p‐type GaAs and compensated GaAs over a wide temperature range demonstrate that the shape of the edge in such materials is not dependent on phonon interactions, and is attributable to the state of charge of impurities in the material.

THERMAL NOISE IN Ge p‐ν‐p SCL DIODES

S. Yamamoto, S. T. Liu, and A. van der Ziel

Appl. Phys. Lett. 11, 140 (1967); http://dx.doi.org/10.1063/1.1755068 (2 pages) | Cited 2 times

Online Publication Date: 30 November 2004

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We measured the noise spectrum between 1 kHz and 60 MHz. At high frequencies the noise seems to reach the limiting value, where g is the differential conductance and n follows from the characteristic.
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Erratum: Scanning Electron Microscopy of Ferroelectric Domains in Barium Titanate

G. Y. Robinson and R. M. White

Appl. Phys. Lett. 11, 141 (1967); http://dx.doi.org/10.1063/1.1755069 (1 page)

Online Publication Date: 30 November 2004

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Erratum: Gain Saturation Flux and Stimulated Emission Cross Section for the 10.6 μ Line of CO2

D. F. Hotz and J. W. Austin

Appl. Phys. Lett. 11, 141 (1967); http://dx.doi.org/10.1063/1.1755070 (2 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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