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1 Nov 1967

Volume 11, Issue 9, pp. 269-299


THE NONLINEAR OPTICAL PROPERTIES OF Ba2NaNb5O15

J. E. Geusic, H. J. Levinstein, J. J. Rubin, S. Singh, and L. G. Van Uitert

Appl. Phys. Lett. 11, 269 (1967); http://dx.doi.org/10.1063/1.1755129 (3 pages) | Cited 96 times

Online Publication Date: 30 November 2004

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Show Abstract
The useful nonlinear coefficients of Ba2NaNb5O15 are approximately twice those of LiNbO3. This material is a filled (A sites) structure composition and at room temperature does not have the serious problem of optically induced refractive index inhomogeneities (``optical damage''). Also, the material has unique and reproducible phasematch temperatures. The electro‐optic half‐wave voltage of this material in the optimum direction is 1570 V.

ON LASER‐INDUCED BREAKDOWN AND FRACTURE IN GLASSES

H. Dupont, A. Donzel, and J. Ernest

Appl. Phys. Lett. 11, 271 (1967); http://dx.doi.org/10.1063/1.1755130 (2 pages) | Cited 13 times

Online Publication Date: 30 November 2004

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Phenomena accompanying laser‐induced damage in glasses were studied, showing many analogies with laser‐induced breakdown in gases. Ionization due to multiphoton absorption, as primary cause for laser‐induced damage, is favored by these observations.

ELASTIC SURFACE WAVES IN A LAYERED SYSTEM OF CADMIUM SULFIDE ON GERMANIUM

Paul Schnitzler

Appl. Phys. Lett. 11, 273 (1967); http://dx.doi.org/10.1063/1.1755131 (3 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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The theoretical behavior of the elastic surface wave phase velocities is presented as a function of direction and layer thickness for a CdS layer on the (001) and (011) faces of a semi‐infinite crystal of Ge.

BLUE LASER EMISSION FROM A FLASHLAMP‐EXCITED ORGANIC DYE SOLUTION

B. B. Snavely, O. G. Peterson, and R. F. Reithel

Appl. Phys. Lett. 11, 275 (1967); http://dx.doi.org/10.1063/1.1755132 (2 pages) | Cited 12 times

Online Publication Date: 30 November 2004

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Laser emission at 454 mμ has been obtained from 4‐methyl umbelliferone in water solution excited by a fast rise time flashlamp.

THE NONLINEAR EFFECT OF ALTERING THE ZEROTH ORDER DENSITY DISTRIBUTION OF A PLASMA

H. C. S. Hsuan, R. C. Ajmera, and K. E. Lonngren

Appl. Phys. Lett. 11, 277 (1967); http://dx.doi.org/10.1063/1.1755133 (3 pages) | Cited 22 times

Online Publication Date: 30 November 2004

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By increasing the power of an incident microwave signal on the positive column of a mercury vapor discharge, one observes a nonlinear response. This phenomena can be explained as being due to an alteration of the density which is caused by the externally applied field.

LOCALIZED VIBRATIONAL MODES OF Li AND P IMPURITIES IN GERMANIUM

A. E. Cosand and W. G. Spitzer

Appl. Phys. Lett. 11, 279 (1967); http://dx.doi.org/10.1063/1.1755134 (3 pages) | Cited 7 times

Online Publication Date: 30 November 2004

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Infrared absorption bands due to localized vibrational modes of impurities in germanium are observed at liquid‐nitrogen temperature. One pair of bands shows a Li isotope shift from frequencies of 356 cm−1 and 380 cm−1 with 7Li to 379 cm−1 and 405 cm−1 with 6Li; these are attributed to Li paired with Ga. Two bands are associated with the phosphorus: one, at 343 cm−1, is attributed to isolated substitutional phosphorus; the other, at 350 cm−1, is attributed to P☒Ga pairs.

ELECTRON IRRADIATION HARDENING OF ALUMINUM‐1 AT. % ZINC SINGLE CRYSTALS

T. Mifune, M. Meshii, and Kanji Ono

Appl. Phys. Lett. 11, 282 (1967); http://dx.doi.org/10.1063/1.1755135 (2 pages) | Cited 3 times

Online Publication Date: 30 November 2004

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Al‐1 at. % Zn single crystals were tensile tested after 1 MeV electron irradiation near 20°K. The increase in the yield stress due to irradiation was proportional to the square root of the electron dose with a proportionality constant similar to that in aluminum. The strain rate sensitivity of the flow stress in stage I increased proportionally to the irradiation induced hardening. The electron irradiation hardening appears to be due to randomly dispersed interstitials acting as obstacles to the movement of dislocations.

EFFECT OF SULFUR ANNEALING PRESSURE ON RESISTIVITY HOMOGENEITY OF CdS SINGLE CRYSTALS

M. K. Parsons and F. L. English

Appl. Phys. Lett. 11, 283 (1967); http://dx.doi.org/10.1063/1.1755136 (4 pages) | Cited 83 times

Online Publication Date: 30 November 2004

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Resistivity inhomogeneities in single‐crystal CdS have been studied as a function of sulfur (S2) annealing pressure. The number and severity of the inhomogeneities increase with the value of S2 partial pressure and are believed to be responsible for the deterioration of ultrasonic gain in crystals annealed at pressures much above a critical pressure.

CORRELATION BETWEEN ELECTROLUMINESCENCE AND ELECTRON EMISSION OF THIN METAL‐OXIDE‐METAL SANDWICHES

J. F. Delord, K. H. Johnston, R. E. Coovert, B. Pistoulet, C. Roustand, and M. Rouzeyre

Appl. Phys. Lett. 11, 287 (1967); http://dx.doi.org/10.1063/1.1755137 (3 pages) | Cited 5 times

Online Publication Date: 30 November 2004

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Experiments performed on M‐O‐M sandwiches of Be☒BeO☒Au and Al☒Al2O3☒Ag have demonstrated that the electron emission of these so called thin‐film ``cathodes'' is actually due to photoemission from the counterelectrode caused by the luminescence of the device.

A TECHNIQUE FOR OBTAINING A NONPSEUDOSCOPIC REAL IMAGE FROM HOLOGRAMS

A. J. Devaney and C. R. Grauling

Appl. Phys. Lett. 11, 289 (1967); http://dx.doi.org/10.1063/1.1755138 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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In this Letter we describe a technique for producing nonpseudoscopic real images from a hologram which was constructed in the normal manner. It is shown that by properly choosing the reconstructing beam it is possible to ``project'' the virtual image thus obtaining a real image. The process is likened to that of imaging the virtual image through a positive lens whose focal length and aperture are directly related to parameters of the reconstructing beam.

CONTINUOUS OPERATION OF GaAs JUNCTION LASERS ON DIAMOND HEAT SINKS AT 200°K

J. C. Dyment and L. A. D'Asaro

Appl. Phys. Lett. 11, 292 (1967); http://dx.doi.org/10.1063/1.1755139 (3 pages) | Cited 24 times

Online Publication Date: 30 November 2004

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Gallium arsenide stripe geometry junction lasers have now been operated continuously at a heat sink temperature of 200°K, which is the highest yet attained. The improvement is due to higher thermal conductivity resulting from (1) a heat sink made of type IIa diamond with a thermal conductivity of 45 W cm−1 °K−1 at 200°K, (2) an optimized stripe width near 12.5 μm and (3) an unusually thin diffused p region, 2.5 μm deep. This type of laser is unique in that the radiation pattern is Gaussian when measured parallel to the junction plane.

A NEW RECORDING TECHNIQUE FOR ACOUSTIC HOLOGRAPHY

J. D. Young and J. E. Wolfe

Appl. Phys. Lett. 11, 294 (1967); http://dx.doi.org/10.1063/1.1755140 (3 pages) | Cited 1 time

Online Publication Date: 30 November 2004

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A new method of recording ultrasonic holograms using deformable films on solid substrates is described. The films have been used to phase‐modulate laser light for image reconstruction.

ELECTRIC‐FIELD‐DEPENDENT LUMINESCENT SPECTRA OF GRADED BAND‐GAP SEMICONDUCTORS

Robert Hill and Ferd Williams

Appl. Phys. Lett. 11, 296 (1967); http://dx.doi.org/10.1063/1.1755141 (3 pages) | Cited 13 times

Online Publication Date: 30 November 2004

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Luminescent emission from zinc‐cadmium sulfide crystals with graded composition has been investigated. The edge emission spectrum was found to vary linearly with electric field applied parallel to the composition gradient. Possible mechanisms are evaluated, and it is concluded that positive hole transport between regions with different band gaps is responsible for the spectral shift. The effect can be used to determine the product of minority carrier lifetime and mobility.

REFLECTION HIGH‐ENERGY ELECTRON DIFFRACTION AND X‐RAY EMISSION ANALYSIS OF SURFACES AND THEIR REACTION PRODUCTS

P. B. Sewell and M. Cohen

Appl. Phys. Lett. 11, 298 (1967); http://dx.doi.org/10.1063/1.1755142 (2 pages) | Cited 9 times

Online Publication Date: 30 November 2004

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Show Abstract
An apparatus is described in which it is possible to obtain simultaneous reflection high‐energy electron diffraction and x‐ray emission measurements from surfaces. The ultimate vacuum in the electron diffraction section of the apparatus is <10−9 torr so that both chemical and crystallographic information about clean surfaces and surfaces with adsorbed monolayers or thin film reaction products can be acquired. The sensitivity of the apparatus is illustrated with oxygen on the (001) surface of iron.
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