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1 Feb 1968

Volume 12, Issue 3, pp. 57-112


INTERACTION OF LITHIUM WITH OXYGEN AND DEFECTS IN SILICON

P. H. Fang, Y. M. Liu, J. R. Carter, and R. G. Downing

Appl. Phys. Lett. 12, 57 (1968); http://dx.doi.org/10.1063/1.1651897 (2 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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Spontaneous annealing was observed at room temperature of the electron irradiation induced defect in lithium diffused oxygen‐rich silicon. Some implications of this observation are discussed.

REPETITIVE PULSING OF THE CO2 LASER BY MEANS OF CO2 GAS AND OTHER ABSORBERS

Philip L. Hanst, John A. Morreal, and William J. Henson

Appl. Phys. Lett. 12, 58 (1968); http://dx.doi.org/10.1063/1.1651898 (4 pages) | Cited 23 times

Online Publication Date: 17 October 2003

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Repetitive pulsing of the CO2 laser has been obtained as a result of absorption by formic acid vapor, propylene gas, heated CO2 gas or heated CO2‐propylene mixtures. Pulsing rates of close to 105 pulses per second have been obtained. Remarkable stability in the frequency and amplitude of the pulses has been observed. Any CO2 line can be pulsed without difficulty, and it is suggested that a proper match of absorber lines and laser lines should permit pulsing of other types of infrared lasers.

LASER ACTION IN FIELD‐IONIZED BULK GaAs

P. D. Southgate

Appl. Phys. Lett. 12, 61 (1968); http://dx.doi.org/10.1063/1.1651899 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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Stimulated emission of recombination radiation has been observed at 78°K in n‐type GaAs ionized by the passage of Gunn domains. Output pulses are about 2 nsec long, and have a bandwidth of 30 Å; more than half the light is emitted within 8° of the normal to the polished specimen face.

PHOTOEMISSION FROM GaAs THIN FILMS

R. F. Steinberg

Appl. Phys. Lett. 12, 63 (1968); http://dx.doi.org/10.1063/1.1651900 (3 pages) | Cited 1 time

Online Publication Date: 17 October 2003

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A technique is described for obtaining atomically clean GaAs surfaces by evaporating epitaxially a GaAs layer on the bulk crystal under ultrahigh vacuum. Photoemission sensitivities of 220 μA∕lumen have been obtained, with high quantum yields in the near‐infrared region.

MOVING MASK GROWTH OF SINGLE‐CRYSTAL SILICON FILMS ON AMORPHOUS QUARTZ SUBSTRATES

M. Braunstein, R. R. Henderson, and A. I. Braunstein

Appl. Phys. Lett. 12, 66 (1968); http://dx.doi.org/10.1063/1.1651901 (2 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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We have combined vapor‐liquid‐solid mechanisms with a moving‐mask‐growth technique in a study of the nucleation and condensation of single‐crystal silicon films deposited on amorphous dielectric substrates by vacuum evaporation of silicon. Using this VLS‐MMG approach we have grown silicon single crystals up to 50 × 300 μ in lateral dimension on fused quartz substrates at substrate temperatures of 800 to 900°C.

IMAGE CONVERSION FROM 1.6 μ TO THE VISIBLE IN LITHIUM NIOBATE

J. E. Midwinter

Appl. Phys. Lett. 12, 68 (1968); http://dx.doi.org/10.1063/1.1651902 (3 pages) | Cited 49 times

Online Publication Date: 17 October 2003

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Image information at 1.6 μ has been converted to the green by mixing it with highly collimated ruby laser radiation in lithium niobate. About 50 lines resolution has been achieved, limited only by the laser beam quality. A tenfold increase on this should be attainable with a single transverse mode laser.

MAGNON SIDEBANDS AND LOCAL ORDER IN Co‐DOPED MnF2

J. P. van der Ziel

Appl. Phys. Lett. 12, 70 (1968); http://dx.doi.org/10.1063/1.1651903 (3 pages)

Online Publication Date: 17 October 2003

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A magnon sideband associated with an isolated Co single‐ion optical transition is reported in Co‐doped MnF2. Measurements of the temperature dependence of the absorption, after the subtraction of the thermal contribution to the line shift, indicates the presence of local order above the Néel temperature.

LASER BACKSCATTER CORRELATION WITH TURBULENT REGIONS OF THE ATMOSPHERE

J. D. Lawrence, M. P. McCormick, S. H. Melfi, and D. P. Woodman

Appl. Phys. Lett. 12, 72 (1968); http://dx.doi.org/10.1063/1.1651904 (2 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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An instrumented jet aircraft has been used to probe regions of the clear atmosphere where an enhancement of radiation backscattered from a ground‐based ruby laser was observed. In twenty‐seven cases, established over five nights of observation, the aircraft encountered light turbulence in clear air in regions of enhanced backscattering.

MODE LOCKING OF THE CO2 LASER

D. E. Caddes, L. M. Osterink, and Russell Targ

Appl. Phys. Lett. 12, 74 (1968); http://dx.doi.org/10.1063/1.1651905 (3 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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Mode‐locking a CO2 laser through the use of a GaAs intracavity acousto‐optic loss modulator is reported. Also presented are the results of an analysis which includes the important effect of nonlinear saturation on the output power.

PHOTOEMISSION FROM InP‐Cs‐O

R. L. Bell and J. J. Uebbing

Appl. Phys. Lett. 12, 76 (1968); http://dx.doi.org/10.1063/1.1651906 (3 pages) | Cited 17 times

Online Publication Date: 17 October 2003

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Photoelectric measurements on cleaved p+ InP show that a process of cesiation and oxidation can produce a work function lower than the InP bandgap. Efficient photoemission results, with luminous efficiencies of 450 μA∕lumen or better, and a threshold at 1.24 eV (1 μ).

HETERODYNE DETECTION AT mm WAVELENGTHS USING A ROLLIN InSb BOLOMETER

M. A. Kinch

Appl. Phys. Lett. 12, 78 (1968); http://dx.doi.org/10.1063/1.1651907 (3 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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A Rollin free‐carrier InSb bolometer has been operated in both video and heterodyne modes at 4 mm wave‐lengths. Responsivities ∼1.75 × 103 V∕W were obtained at 1.2°K with N.E.P.'s for (a) the video mode ∼10−13 W, and (b) the heterodyne mode ∼8 × 10−21 W, using an i.f. ∼ 2.6 kHz.

INFLUENCE OF IONIZED IMPURITY SCATTERING ON GUNN EFFECT AND IMPACT IONIZATION IN CdTe

Gerald S. Picus, Donald F. DuBois, and Lynette B. Van Atta

Appl. Phys. Lett. 12, 81 (1968); http://dx.doi.org/10.1063/1.1651908 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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Recombination radiation from electron‐hole pairs generated by impact ionization has been observed in heavily doped CdTe at electric field intensities higher than those required to produce Gunn oscillations in lightly doped material. The suppression of the Gunn effect in the more heavily doped CdTe is attributed to a decrease in the magnitude of the negative differential mobility displayed by the drift velocity vs electric field characteristic resulting from the presence of ionized impurity scattering.

EVIDENCE FOR SUPERRADIANCE IN THE RECOMBINATION RADIATION FROM CdTe

Lynette B. Van Atta, Gerald S. Picus, and Amnon Yariv

Appl. Phys. Lett. 12, 84 (1968); http://dx.doi.org/10.1063/1.1651909 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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Linewidth narrowing attributed to superradiance has been observed in near bandgap radiation due to the recombination of impact ionized carriers in n‐type CdTe at room temperature. The light emission was associated with a current breakdown that occurred at a threshold field of 12,000 V∕cm in highly compensated n‐type samples.

IMPROVED PERFORMANCE OF PULSED NOBLE GAS ION LASERS WITH AN AXIAL MAGNETIC FIELD

Milton Birnbaum

Appl. Phys. Lett. 12, 86 (1968); http://dx.doi.org/10.1063/1.1651910 (4 pages) | Cited 7 times

Online Publication Date: 17 October 2003

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The output of pulsed argon ion lasers with an axial magnetic field was studied as a function of magnetic field, current, inside diameter, pressure, and oscillating wavelength. The increased output and efficiency obtained by use of an axial magnetic field clearly indicate its advantages. A simple method of providing the required magnetic field is described.

DEPENDENCE OF SECOND‐HARMONIC PHASE‐MATCHING TEMPERATURE IN LiNbO3 CRYSTALS ON MELT COMPOSITION

Homer Fay, W. J. Alford, and H. M. Dess

Appl. Phys. Lett. 12, 89 (1968); http://dx.doi.org/10.1063/1.1651911 (4 pages) | Cited 60 times

Online Publication Date: 17 October 2003

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The second‐harmonic, phase‐matching temperature of ``stoichiometric'' LiNbO3 crystals, for fundamental radiation at 1.06 μ, has been found to vary by as much as 75°C from crystal to crystal and 10°C within an individual crystal. Measurements on crystals grown in a controlled manner from nonstoichiometric melts have shown that the phase‐matching temperature, T, is an approximately linear function of melt composition, x, obeying the equation T = 50.5 + 32 × 102 (x − 0.50). Crystals with phase‐matching temperatures of as high as 186°C have been grown from melts containing excess lithia. Such a crystal has been operated as a second harmonic generator without damage, whereas a comparable radiation produced by a crystal with a low phase‐matching temperature damaged the crystal. A mechanism involving lithium ion vacancies is proposed to explain the results.

CURIE TEMPERATURE, BIREFRINGENCE, AND PHASE‐MATCHING TEMPERATURE VARIATIONS IN LiNbO3 AS A FUNCTION OF MELT STOICHIOMETRY

J. G. Bergman, A. Ashkin, A. A. Ballman, J. M. Dziedzic, H. J. Levinstein, and R. G. Smith

Appl. Phys. Lett. 12, 92 (1968); http://dx.doi.org/10.1063/1.1651912 (3 pages) | Cited 108 times

Online Publication Date: 17 October 2003

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The Curie temperature, birefringence, and phase‐matching temperature of LiNbO3 are shown to vary with the stoichiometry of the melt from which the crystals are pulled. The range of melt stoichiometry, indexed by the Li∕Nb mole ratio, was varied from 1.20 to 0.80. This Li∕Nb variation changes the Curie temperature, refractive index for the extraordinary ray, and the phase‐matching temperature by 120°C,.03, and 320°C respectively. The relevance of these changes are discussed in terms of the susceptibility of LiNbO3 to index inhomogeneities.

SURFACE STATES IN SILICON FROM CHARGES IN THE OXIDE COATING

A. Goetzberger, V. Heine, and E. H. Nicollian

Appl. Phys. Lett. 12, 95 (1968); http://dx.doi.org/10.1063/1.1651913 (3 pages) | Cited 61 times

Online Publication Date: 17 October 2003

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The experimentally observed distributions of surface state density versus energy is correlated with the existence of coulombic centers in the oxide. Single charges give rise to peaks in surface state density close to the band edges, deeper levels are introduced by two charges in close proximity.

OBSERVATIONS OF NONCOLLINEAR PHASE MATCHING IN OPTICAL PARAMETRIC NOISE EMISSION

R. G. Smith, J. G. Skinner, J. E. Geusic, and W. G. Nilsen

Appl. Phys. Lett. 12, 97 (1968); http://dx.doi.org/10.1063/1.1651914 (4 pages) | Cited 16 times

Online Publication Date: 17 October 2003

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Measurements of optically excited parametric noise which demonstrate the importance of noncollinear phase matching are presented. The absolute magnitude of the emitted noise has also been measured and is found to be in excellent agreement with theory.

FIELD EMISSION SHADOW MICROSCOPY

Allan J. Melmed

Appl. Phys. Lett. 12, 100 (1968); http://dx.doi.org/10.1063/1.1651891 (3 pages) | Cited 15 times

Online Publication Date: 17 October 2003

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An electron field emitter is used as an approximate point source of electrons to produce magnified shadows, or profile images, of small electrically conducting objects in ultrahigh vacuum. Some electrical and electron optical properties of this type of microscopy are described.

OBSERVATION OF SUPERRADIANT LASER ACTION IN SPARK DISCHARGES IN AIR AT ATMOSPHERIC PRESSURE

A. Svedberg, L. Högberg, and R. Nilsson

Appl. Phys. Lett. 12, 102 (1968); http://dx.doi.org/10.1063/1.1651892 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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Superradiant, stimulated emission at 3371 Å has been observed from spark discharges in air at atmospheric pressure. This emission corresponds to transitions in the second positive band system of molecular nitrogen. Duration of the emitted laser pulse is about 0.6 nsec and peak power output is about 2 W.

MULTIPLE PULSE EMISSION FROM A HCN LASER

R. Turner, A. K. Hochberg, and T. O. Poehler

Appl. Phys. Lett. 12, 104 (1968); http://dx.doi.org/10.1063/1.1651893 (3 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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The time dependence of the output of a high‐energy HCN laser has been studied with an indium antimonide detector. At a CH3CN partial pressure of 0.24 torr, three separate infrared pulses are emitted during a 250 μsec time interval after the current pulse. The addition of He, A, O2 or H2 changes both the number and delay between the pulses. As many as six pulses approximately 90 μsec apart in a 450 μsec period are observed with a He☒CH3CN gas mixture.

THIRD HARMONIC OF AN INITIALLY SINUSOIDAL ULTRASONIC WAVE IN COPPER

R. D. Peters and M. A. Breazeale

Appl. Phys. Lett. 12, 106 (1968); http://dx.doi.org/10.1063/1.1651894 (3 pages) | Cited 8 times

Online Publication Date: 17 October 2003

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The amplitude of the third harmonic of an initially sinusoidal ultrasonic wave is measured in the [100] direction in copper, both directly and by a pulse overlap technique. The value of the third‐order elastic constant C111=−16 × 1012 dyn∕cm2 is obtained from measurements of third harmonic amplitudes of the order of 10−3 Å. The contribution of the fourth‐order constant C1111 to these amplitudes appears to be negligible.

Al2O3‐SILICON INSULATED GATE FIELD EFFECT TRANSISTORS

A. Waxman and K. H. Zaininger

Appl. Phys. Lett. 12, 109 (1968); http://dx.doi.org/10.1063/1.1651895 (2 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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MOS transistors, with aluminum oxide as gate insulator, have been fabricated. The Al2O3 films were formed by first depositing aluminum on freshly cleaned 10 Ω‐cm silicon and then anodizing the aluminum in an oxygen plasma. All other steps used standard silicon technology. Electron diffraction showed that the insulator films are amorphous. The index of refraction is between 1.67 and 1.70 and the relative dielectric constant is 7.6. The devices have a threshold voltage of between ±0.5 V, and an interface state density of about 2 × 1010 states∕cm2‐eV. No evidence for ionic motion under positive bias was found at elevated temperatures. Under 1 MeV electron bombardment at various fluence levels and bombardment biases these devices showed excellent radiation resistance. Their radiation behavior is better than that observed for MNS or ``hardened SiO2'' devices.

MEASUREMENT OF THE VELOCITY FIELD CHARACTERISTIC OF ELECTRONS IN GERMANIUM

D. M. Chang and J. G. Ruch

Appl. Phys. Lett. 12, 111 (1968); http://dx.doi.org/10.1063/1.1651896 (2 pages) | Cited 25 times

Online Publication Date: 17 October 2003

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The velocity field characteristics of electrons in germanium were measured in a range of temperatures between 33°K and 130°K and the electric field along the 〈 100 〉 orientation of the crystal. At 33°K a negative differential mobility of 300 cm2∕V‐sec was observed with a threshold field of 1.5 kV∕cm. The negative differential mobility decreases with increasing temperature. At 130°K there is definitely no negative differential mobility.
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