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15 Feb 1968

Volume 12, Issue 4, pp. 113-159


COHERENCE PROPERTIES OF THE SUPERRADIANT 5401 Å PULSED NEON LASER

Donald A. Leonard and William R. Zinky

Appl. Phys. Lett. 12, 113 (1968); http://dx.doi.org/10.1063/1.1651915 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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The spatial and temporal coherence of the 5401 Å pulsed neon laser were measured experimentally. These measurements show that although the laser operates in a purely superradiant mode with zero feedback amplification, the output can be coherent over the entire duration of a 2 nsec pulse.

DEPENDENCE OF RADIATIVE EFFICIENCY IN GaP DIODES ON HEAT TREATMENT

A. Onton and M. R. Lorenz

Appl. Phys. Lett. 12, 115 (1968); http://dx.doi.org/10.1063/1.1651916 (3 pages) | Cited 27 times

Online Publication Date: 17 October 2003

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Room temperature electroluminescence peaks at 1.80 and at 1.37 eV in GaP diodes doped with Zn and O are shown to be related. Emission can be shifted from one peak to the other by heat treatments. It is proposed that those emission peaks correspond to recombination at nearest neighbor Zn☒O pairs and pairs at larger separations, respectively. The thermal activation energy associated with the transformation of red emission centers to infrared emission centers is 0.54 ± 0.15 eV.

MODULATION OF OPTICAL ABSORPTION AT THE INTRINSIC EDGE BY ACOUSTOELECTRIC DOMAINS IN n‐GaAs

David L. Spears and Ralph Bray

Appl. Phys. Lett. 12, 118 (1968); http://dx.doi.org/10.1063/1.1651917 (3 pages) | Cited 26 times

Online Publication Date: 17 October 2003

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The enhancement of optical absorption by propagating acoustoelectric domains is observed in n‐GaAs at 77°K. The spectral dependence of this absorption corresponds to an exponential broadening of the intrinsic absorption edge. Several possible mechanisms for this effect are considered in terms of the electric field and the acoustic flux present in the domain.

PASSIVE Q SWITCHING OF THE CO2 LASER BY VINYL CHLORIDE

James. T. Yardley

Appl. Phys. Lett. 12, 120 (1968); http://dx.doi.org/10.1063/1.1651918 (3 pages) | Cited 14 times

Online Publication Date: 17 October 2003

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One P‐branch line, tentatively identified as P18 or P20, of the 00°1 → 10°0 transition of CO2 has been passively Q switched, using vinyl chloride as the saturable absorber. Average power is roughly the same as that obtained using pure SF6 for Q switching. The observed pulse width is about 2 μsec and the time between pulses is about 20 μsec.

ASSIGNMENT OF SOME DCN AND HCN LASER LINES

Arthur G. Maki

Appl. Phys. Lett. 12, 122 (1968); http://dx.doi.org/10.1063/1.1651919 (3 pages) | Cited 13 times

Online Publication Date: 17 October 2003

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The far‐infrared laser lines in DCN are explained as being due to transitions involving the 2200 and 091c0 levels which are mixed by a Coriolis resonance at J = 21. The HCN laser lines near 130 μ are explained by a Coriolis resonance which affects the 1200, 1220, and 0510 levels. New laser transitions are predicted for these systems.

ABSOLUTE FREQUENCY MEASUREMENTS OF NEW CW DCN SUBMILLIMETER LASER LINES

L. O. Hocker and A. Javan

Appl. Phys. Lett. 12, 124 (1968); http://dx.doi.org/10.1063/1.1651920 (2 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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New CW laser lines at 204 μ, 195 μ, and 190 μ have been made to oscillate as pure rotational cascade transitions pumped by the 195 μ and 190 μ DCN lines. Frequency measurement of three of these new lines confirms the identification of all these lines.

EFFECT OF INHOMOGENEOUS MINORITY CARRIER DISTRIBUTIONS IN ELECTRON‐BEAM‐PUMPED LASERS

C. A. Klein and J. M. Lavine

Appl. Phys. Lett. 12, 125 (1968); http://dx.doi.org/10.1063/1.1651921 (3 pages)

Online Publication Date: 17 October 2003

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Power output versus beam current characteristics of electron‐beam‐pumped semiconductor lasers do not exhibit a linear dependence pattern. We demonstrate that this behavior reflects the nonuniform nature of the steady‐state distribution of bombardment‐induced minority carriers. The treatment suggests a novel method of assessing the diffusion length in semiconductors; for laser‐grade n‐type GaAs we find L≲1 μ.

THERMAL EFFECTS AND TRANSVERSE MODE CONTROL IN A Nd:YAG LASER

L. M. Osterink and J. D. Foster

Appl. Phys. Lett. 12, 128 (1968); http://dx.doi.org/10.1063/1.1651922 (4 pages) | Cited 22 times

Online Publication Date: 17 October 2003

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By compensating for the thermal lens effect in a Nd:YAG rod, we have substantially increased the fundamental transverse mode CW power available from the laser. To date, we have obtained over 1.4 W in the TEM00 mode, compared to about 200–300 mW without compensation. The ratio of TEM00 mode power to multimode power is dependent on the pump power, and appears to be related to thermal lens aberrations which occur through the photoelastic effect in the rod. The results of an analysis of the thermal focusing effect in YAG are also included.

SATURATION OF POWER OUTPUT OF A PULSED ION LASER IN VERY HIGH CURRENT REGIONS

Shuzo Hattori and Toshio Goto

Appl. Phys. Lett. 12, 131 (1968); http://dx.doi.org/10.1063/1.1651923 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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Inductive excitation was employed to produce pulsed discharge currents of more than 1000 A. The I.D. of a wide bore tube used was 1 cm, in which laser oscillation has been observed at four ion lines with pure argon at a pressure of about 15 mtorr. It has been found that current dependence of the laser output power at the 4765 Å line is very different from that at the other three lines.

X‐RAY MONOCHROMATORS AND RESONATORS FROM SINGLE CRYSTALS

Richard D. Deslattes

Appl. Phys. Lett. 12, 133 (1968); http://dx.doi.org/10.1063/1.1651924 (3 pages) | Cited 25 times

Online Publication Date: 17 October 2003

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Single‐crystal specimens shaped so as to permit successive x‐ray diffraction by two nonparallel atomic planes are fixed wavelength monochromators. It is shown that certain plane pairs in Si and Ge pass wavelengths sufficiently close to strong characteristic lines to allow production of intense highly monochromatic beams. For tautozonal planes belonging to the same crystal form, resonators and retroreflectors are possible.

TIME‐RESOLVED STIMULATED EMISSION SPECTRA OF AN ORGANIC DYE LASER

G. I. Farmer, B. G. Huth, L. M. Taylor, and M. R. Kagan

Appl. Phys. Lett. 12, 136 (1968); http://dx.doi.org/10.1063/1.1651925 (3 pages) | Cited 18 times

Online Publication Date: 17 October 2003

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The output from a transverse‐pumped organic dye laser has been investigated using time‐resolved spectroscopy. It is found that for the specific case of DTTC‐Iodide dissolved in either DMSO or methanol the peak wavelength in the emission band shifts during the output pulse.

PIEZO‐ AND THERMO‐OPTIC BEHAVIOR OF LiNBO3

K. Vedam and T. A. Davis

Appl. Phys. Lett. 12, 138 (1968); http://dx.doi.org/10.1063/1.1651926 (3 pages) | Cited 7 times

Online Publication Date: 17 October 2003

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The variation of the ordinary and the extraordinary refractive indices of LiNbO3 with hydrostatic pressure to 7 kbar has been measured by an interferometric method. Both the indices for λ 5893 Å were found to increase linearly with pressure with slopes of 0.32 × 10−3∕kbar and 0.69 × 10−3∕kbar respectively for the ordinary and extraordinary rays. An analysis of these results and the published data on the variation of the refractive indices of LiNbO3 with temperature, reveal that the pure temperature effect on polarizability is very large in this material.

EFFECTS OF MULTIPLY‐CHARGED GOLD IMPURITY ON THE BREAKDOWN VOLTAGE OF SILICON P‐N JUNCTIONS

C. T. Sah and D. K. Schroder

Appl. Phys. Lett. 12, 141 (1968); http://dx.doi.org/10.1063/1.1651927 (2 pages) | Cited 1 time

Online Publication Date: 17 October 2003

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In the transition‐depletion region of both P+N and N+P step silicon junctions, gold impurity is in the negatively charged acceptor state. It decreases the net charge in the transition region of the P+N case and increases the net charge in the transition region of the N+P case. This results in a corresponding increase and decrease respectively of the breakdown voltage of these cases. Experimental data obtained show very good correlation with this model.

THE ABSORPTION COEFFICIENT OF GaAs AT MICROWAVE AND MILLIMETER WAVE FREQUENCIES

Marcel R. E. Bichara

Appl. Phys. Lett. 12, 142 (1968); http://dx.doi.org/10.1063/1.1651928 (3 pages) | Cited 1 time

Online Publication Date: 17 October 2003

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Measurements of the absorption coefficient of GaAs have been made on low resistivity (0.176 Ω‐cm, n‐type) and high resistivity (> 106 Ω‐cm, p‐type) samples for frequencies between 1.8 and 100 GHz. In both cases the theoretical values expected, derived using classical electromagnetic theory, were confirmed by those obtained experimentally, thus throwing doubt on the existence of the unexplained variation of the dielectric constant with respect to frequency found by Larrabee and Hicinbothem.

A NEW KIND OF RAPID‐SCAN MONOCHROMATOR USEFUL FOR ANALYZING CHEMICAL LASERS

David W. Gregg and Scott J. Thomas

Appl. Phys. Lett. 12, 144 (1968); http://dx.doi.org/10.1063/1.1651929 (3 pages) | Cited 1 time

Online Publication Date: 17 October 2003

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A new rapid‐scan monochromator useful for analyzing chemical lasers has been evaluated. It consists of using a grating as part of the laser cavity and rotating one of the laser mirrors. The lasing lines are individually Q‐switched, increasing their intensities by a factor of 105. No limitation was found in the scan speed, and the theoretical spectral resolution of the grating was achieved. Because of the wavelength selection in the laser cavity, lines are brought out which otherwise would not lase.

THE CRITICAL THICKNESS AND COERCIVITY OF Co‐Ni‐Fe FILMS

J. M. Gorres and M. M. Hanson

Appl. Phys. Lett. 12, 146 (1968); http://dx.doi.org/10.1063/1.1651930 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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The critical thickness for stripe domain formation and the coercivity dependence on thickness of vapor‐deposited Co☒Ni☒Fe films have been found to depend strongly on the cobalt melt percentage. The critical thickness was found to increase and the coercivity dependence on thickness to decrease as the melt cobalt content is increased.

SUBNANOSECOND SCHLIEREN PHOTOGRAPHY OF LASER‐INDUCED GAS BREAKDOWN

A. J. Alcock, C. DeMichelis, and K. Hamal

Appl. Phys. Lett. 12, 148 (1968); http://dx.doi.org/10.1063/1.1651931 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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Second harmonic radiation from a mode‐locked neodymium:glass laser, providing a 400‐nsec‐long train of picosecond pulses, has been used as a light source for Schlieren photography of a laser‐induced spark. The beam from a ruby laser, Q‐switched by means of a Pockels cell, was focused in air to produce breakdown and synchronization of the two lasers was achieved by switching the Pockels cell with a spark gap illuminated by the mode‐locked pulse train.

MANY‐BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER

N. Holonyak, M. R. Johnson, J. A. Rossi, and W. O. Groves

Appl. Phys. Lett. 12, 151 (1968); http://dx.doi.org/10.1063/1.1651932 (3 pages) | Cited 21 times

Online Publication Date: 17 October 2003

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Under conditions of negligible heating, optical excitation of thin, homogeneous semiconductor platelets to higher levels increases the number of longer wavelength laser modes without loss of the shorter wavelength modes. This relative shift to longer wavelength operation as a function of excitation is attributed to many‐body interactions.

RADIATION EFFECTS IN METAL‐INSULATOR‐SEMICONDUCTOR CAPACITORS AS DETERMINED FROM CONDUCTANCE MEASUREMENTS

C. W. Perkins

Appl. Phys. Lett. 12, 153 (1968); http://dx.doi.org/10.1063/1.1651933 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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Conductance‐versus‐voltage measurements were employed to determine the distribution of fast interface states in MOS and MNS capacitors and the changes in these distributions due to gamma irradiation with applied bias. MNS samples showed no changes due to irradiation, while MOS samples showed an increase in the conductance peak due to an increase in the density of the fast states.

SINGLE‐CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES

Harold M. Manasevit

Appl. Phys. Lett. 12, 156 (1968); http://dx.doi.org/10.1063/1.1651934 (4 pages) | Cited 120 times

Online Publication Date: 17 October 2003

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Chemical vapor deposition has been been used successfully for the attainment of a single‐crystal growth of gallium arsenide directly on a number of single‐crystal insulating oxide substrates. Several orientation relationships have been determined for GaAs grown on sapphire (α‐Al2O3), spinel (MgAl2O4), beryllium oxide (BeO), and thorium oxide (ThO2).
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