APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Apr 1968

Volume 12, Issue 8, pp. 241-280


TIME DEPENDENCE IN THE THERMAL BLOOMING OF LASER BEAMS

R. L. Carman and P. L. Kelley

Appl. Phys. Lett. 12, 241 (1968); http://dx.doi.org/10.1063/1.1651973 (3 pages) | Cited 21 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The time dependence of the thermal defocusing of a laser beam has been studied. Under certain conditions the beam is found to expand linearly with time, under others it expands with a time dependence approaching t1∕2.
FREE

COMMENTS ON CORRELATION BETWEEN ELECTROLUMINESCENCE AND ELECTRON EMISSION OF THIN METAL‐OXIDE‐METAL SANDWICHES

H. Kanter

Appl. Phys. Lett. 12, 243 (1968); http://dx.doi.org/10.1063/1.1651974 (2 pages) | Cited 3 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
It is shown experimentally that only at ``larger'' field strengths is the electron current from cold‐cathode Al☒Al2O3☒Au structures dominated by photoelectron emission released in the top layer through electroluminescence radiation within the oxide.

DOPING OF SILICON BY ION IMPLANTATION

Tadatsugu Itoh, Taroh Inada, and Kiyoshi Kanekawa

Appl. Phys. Lett. 12, 244 (1968); http://dx.doi.org/10.1063/1.1651975 (3 pages) | Cited 16 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Radiation damages created in silicon single crystals bombarded with 10‐keV aluminum ions were examined by means of electron diffraction method. A deep penetration of aluminum ion in silicon was observed, extending to 0.58 μ. This penetration was depressed by removing the bombarded surface layer about 800 Å in thickness before annealing. From these results, we interpret the deep penetration as a radiation enhanced diffusion effect.

RAMAN LINEWIDTHS FOR STIMULATED THRESHOLD AND GAIN CALCULATIONS

W. R. L. Clements and B. P. Stoicheff

Appl. Phys. Lett. 12, 246 (1968); http://dx.doi.org/10.1063/1.1651976 (3 pages) | Cited 65 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Linewidths in the normal Raman spectra of several liquids of interest in stimulated Raman scattering have been measured including carbon disulfide, benzene, toluene, oxygen, and nitrogen. The spectra were excited with 6328‐Å radiation from a He‐Ne laser and examined with a pressure‐scanned Fabry‐Perot interferometer.

HOT‐CARRIER MICROWAVE HARMONIC GENERATION

P. David Fisher

Appl. Phys. Lett. 12, 248 (1968); http://dx.doi.org/10.1063/1.1651977 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Microwave second‐harmonic generation is observed in germanium when a microwave power density gradient exists within the sample. This second‐harmonic thermoelectric voltage is proportional to the incident microwave power for low power levels and is found to begin to saturate as the power level approaches 1 mW. This voltage could be utilized to directly measure the energy relaxation time of free charge carriers.

AMPLIFICATION OF ULTRASONIC WAVES UNDER DC OPERATING CONDITION IN InSb UNDER TRANSVERSE MAGNETIC FIELD

Hisao Hayakawa and Makoto Kikuchi

Appl. Phys. Lett. 12, 251 (1968); http://dx.doi.org/10.1063/1.1651978 (2 pages) | Cited 13 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Amplification of ultrasonic waves at 225 MHz up to 20 dB has been achieved by the dc operation in n‐InSb under the transverse magnetic field at 77°K. If we assume that dc and ac mobilities have different dependence on the magnetic field, most of the characteristic features of the observed results are well explained.

THE OPTICAL DETECTION OF STIMULATED EMISSION IN CN AT 20‐CM WAVELENGTH

Kenneth M. Evenson

Appl. Phys. Lett. 12, 253 (1968); http://dx.doi.org/10.1063/1.1651979 (2 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Six of the seven allowed electric dipole transitions between the hyperfine levels of the J = 7∕2 lambda doublet in the 10th vibrational level of the A2π3∕2 state of CN were observed. The transitions at frequencies between 1580 and 1650 MHz occur between the more populated negative parity levels and the positive parity levels. The stimulated emission was detected by measuring an increase in the intensity of the B2Σ+ → X2Σ+(0, 0) violet band of CN near 3875 Å.

EXPERIMENTAL EVIDENCE FOR INTERSTITIAL In AND Tl IN ION‐IMPLANTED SILICON

J. A. Davies, L. Eriksson, and J. W. Mayer

Appl. Phys. Lett. 12, 255 (1968); http://dx.doi.org/10.1063/1.1651980 (2 pages) | Cited 12 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Using the channeling technique for locating foreign atoms in crystals, we have obtained direct experimental evidence of an irreversible motion of In and Tl atoms from substitutional to interstitial sites during the annealing of ion‐implanted silicon samples. Preliminary Hall measurements indicate that a corresponding transition from p‐ to n‐type behavior also occurs in the same temperature region — viz. 525–575°C. Implantation conditions were 1–3 × 1014 ions∕cm2 at 40 keV, with the substrate at 350–450°C to prevent lattice disorder from accumulating.

THERMAL PRODUCTION OF A POPULATION INVERSION IN CARBON DIOXIDE

E. E. Wisniewski, M. E. Fein, J. T. Verdeyen, and B. E. Cherrington

Appl. Phys. Lett. 12, 257 (1968); http://dx.doi.org/10.1063/1.1651981 (2 pages) | Cited 10 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
A population inversion for the 00°1 → 10°0 (10.6 μ) transition in CO2 has been created by resonant collisional transfer of excitation from thermally excited N2.

SUPERCONDUCTIVITY IN EVAPORATED TUNGSTEN FILMS

S. Basavaiah and S. R. Pollack

Appl. Phys. Lett. 12, 259 (1968); http://dx.doi.org/10.1063/1.1651982 (2 pages) | Cited 20 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Tungsten films were found to be superconducting at 3.2°K. Upon investigation by x‐ray and electron diffraction, a β‐W (A15) structure was evident. Superconducting tunneling studies revealed that the ratio 2Δ(0)∕kTc varied from 2.32 and 3.64 and Δ(T)∕Δ(0) vs T∕Tc followed the BCS theory.

MEMORY BEHAVIOR OF AN MNS CAPACITOR

Henry C. Pao and M. O'Connell

Appl. Phys. Lett. 12, 260 (1968); http://dx.doi.org/10.1063/1.1651983 (4 pages) | Cited 13 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The memory behavior of an MNS capacitor caused by high voltage pulses is described. The instantaneous charge transfer during pulsing is measured and analyzed, and the results compared favorably with those from the C‐V measurement. With this technique the charge transfer was found to be essentially insensitive to temperature up to 300°C. By means of step‐etch tests the stored charge was found to be located within 100 Å of the interface. Tunneling is believed to be the conduction mechanism.

PASSIVE MODE LOCKING OF A CO2 LASER

O. R. Wood and S. E. Schwarz

Appl. Phys. Lett. 12, 263 (1968); http://dx.doi.org/10.1063/1.1651984 (3 pages) | Cited 23 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Self‐locking of longitudinal cavity modes has been observed in a CO2☒N2☒He laser with an SF6 absorber inside the cavity. Pulses as short as 20 nsec, with peak power in the range 104–105W, have been obtained. Pulse trains longer than 100 μsec have been observed. Operation is repetitive at millisecond intervals.

THE DETECTION OF OIL OR MERCURY ON SURFACES IN VACUUM SYSTEMS USING AN ELLIPSOMETER

R. W. Fane, W. E. J. Neal, and R. M. Rollason

Appl. Phys. Lett. 12, 265 (1968); http://dx.doi.org/10.1063/1.1651985 (2 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The application of an ellipsometer to the detection of oil or mercury contamination of surfaces in vacuum systems is discussed. Tables giving instrument readings for these contaminants on appropriate substrates illustrate the feasibility of the technique.

ANOMALOUS DIFFUSION OF NICKEL IN SINGLE CRYSTALS OF LEAD SELENIDE AT 700°C

B. Swaroop and J. B. Wagner

Appl. Phys. Lett. 12, 267 (1968); http://dx.doi.org/10.1063/1.1651986 (2 pages)

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The diffusion of nickel into undoped and silver‐doped, p‐type lead selenide crystals exhibits anomalous behavior at 700°C. The penetration profiles show pronounced minima and these minima migrate into the crystal as a function of time. The minima occur when there is a p to n transition in the initially p‐type crystals. The diffusion of nickel into n‐type, bismuth‐doped crystals does not exhibit a minimum in the penetration profile of nickel and the crystals do not exhibit an n to p transition.

SLOW PULSES FROM A PLANAR Ge(Li) DETECTOR

Eiji Sakai

Appl. Phys. Lett. 12, 269 (1968); http://dx.doi.org/10.1063/1.1651987 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
When a very good planar Ge(Li) detector (3.8 cm2 × 9 mm, ∼77°K, ∼1 kV∕cm) was irradiated by a slit‐collimated 137Cs γ‐ray beam (slit width, ∼0.25 mm) incident parallel to the n+ ‐i and the i‐p junctions, a large and abrupt increase in the relative counting rate of slow rising pulses was observed near the two junctions. The slow pulses had much longer rise times (> 0.5 μsec) than those of the normal fast rising pulses whose rise times were determined by the transit times of the carriers.

REDUCTION IN MECHANICAL STRENGTH OF COPPER BY THE PRESENCE OF A THIN EPITAXIAL OVERGROWTH OF NICKEL

G. E. Ruddle and H. G. F. Wilsdorf

Appl. Phys. Lett. 12, 271 (1968); http://dx.doi.org/10.1063/1.1651988 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Thin overgrowths of nickel were epitaxially formed by electrodeposition on substrate single crystals of copper having specific orientation and geometry. The prepared composite crystals were deformed in tension to small strains and found to have yield stresses significantly lower than for unplated copper crystals. Supported by evidence from replica‐electron microscopic examination of the surface slip structures, it is proposed that the elastic condition of the low interfacial misfit formed by the thin nickel overgrowth on copper promotes activation of surface dislocation sources.

A SIMPLE ANALYSIS OF THE PROPAGATING ACOUSTOELECTRIC HIGH‐FIELD DOMAIN

E. Mosekilde

Appl. Phys. Lett. 12, 273 (1968); http://dx.doi.org/10.1063/1.1651989 (3 pages)

Online Publication Date: 17 October 2003

Full Text: | Download PDF


See Also: Erratum

Show Abstract
An analytical treatment of the uniformly propagating acoustoelectric high‐field domain is presented in the limit of zero diffusion. Expressions for the electron density and the acoustic energy density as functions of the electric field are given. The domain velocity is determined.

OBSERVATION OF PICOSECOND PULSES FROM A Nd:YAG LASER

M. Bass and D. Woodward

Appl. Phys. Lett. 12, 275 (1968); http://dx.doi.org/10.1063/1.1651990 (3 pages) | Cited 19 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Ultrashort pulses are observed in the output of a Pockel's cell Q‐switched, pulsed Nd:YAG laser. This result suggests that self‐locking effects occur in Nd:YAG lasers and that the output of such lasers may, in general, be composed of many picosecond pulses.
FREE

CURRENT‐VOLTAGE CHARACTERISTICS OF JOSEPHSON JUNCTIONS

W. C. Stewart

Appl. Phys. Lett. 12, 277 (1968); http://dx.doi.org/10.1063/1.1651991 (4 pages) | Cited 539 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
A model for superconducting Josephson junctions analogous to the driven simple pendulum with damping gives dc I‐V curves displaying hysteresis for light damping. Excess current and negative dynamic resistance can be obtained with heavy damping.
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close