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1 May 1968

Volume 12, Issue 9, pp. 281-327


EFFECTS OF ELECTRIC AND MAGNETIC FIELDS ON THE STRUCTURE OF CHOLESTERIC LIQUID CRYSTALS

Robert B. Meyer

Appl. Phys. Lett. 12, 281 (1968); http://dx.doi.org/10.1063/1.1651992 (2 pages) | Cited 136 times

Online Publication Date: 17 October 2003

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Electric or magnetic fields acting on the anisotropy of the electric or magnetic susceptibility exert torques within a liquid crystal which may compete with the elastic torques determining its internal structure. A general method is presented for calculating the structural changes thus produced. Two examples are given, and the field strength for the effects is estimated to be 105 V∕cm or 105 G. Two experiments are suggested to test the theory.

TRANSVERSE NEGATIVE DIFFERENTIAL MOBILITIES FOR HOT ELECTRONS AND DOMAIN FORMATION IN GERMANIUM

M. Shyam and H. Kroemer

Appl. Phys. Lett. 12, 283 (1968); http://dx.doi.org/10.1063/1.1651993 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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In n‐type germanium samples biased with a field in the range 4–10 kV∕cm along (110) direction, the differential mobility along the (001) direction is found to be negative. Such transverse negative mobilities give rise to the formation of electrically polarized domains at right angles to the drift velocity of electrons. A brief discussion of the origin of negative transverse mobility is presented.

PHOTOSENSITIVITY IN MONOCRYSTALLINE PbS FILMS

H. R. Riedl and R. B. Schoolar

Appl. Phys. Lett. 12, 285 (1968); http://dx.doi.org/10.1063/1.1651994 (3 pages) | Cited 4 times

Online Publication Date: 17 October 2003

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Monocrystalline films of lead sulfide have been made photosensitive by baking in air or sulfur vapor. It is shown that the baking process formed narrow lines of material which are more p type than the host film. These lines, oriented along [100] and [010] directions, are responsible for the observed photosensitivity.

SURFACE‐STATE RELATED l∕f NOISE IN p‐n JUNCTIONS AND MOS TRANSISTORS

S. T. Hsu, D. J. Fitzgerald, and A. S. Grove

Appl. Phys. Lett. 12, 287 (1968); http://dx.doi.org/10.1063/1.1651995 (3 pages) | Cited 26 times

Online Publication Date: 17 October 2003

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It is shown experimentally that l∕f noise both in silicon p‐n junctions and in MOS transistors can be increased by the introduction of a particular type of surface state. The additional noise power is proportional to the density of these states. The surface states are introduced by the application of an electric field across the oxide at elevated temperatures (e.g., ∼300°C); they are relatively ineffective as surface recombination centers.

INFLUENCE OF XENON ON CO2 LASER PLASMAS

P. Bletzinger and A. Garscadden

Appl. Phys. Lett. 12, 289 (1968); http://dx.doi.org/10.1063/1.1651996 (3 pages) | Cited 7 times

Online Publication Date: 17 October 2003

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Measurements are reported showing the influence of xenon on the discharge properties of CO2 lasers. Small admixtures of xenon lower the electron temperature considerably and it is possible to operate the CO2 laser without nitrogen and with little decrease in output power for low flow rates or sealed‐off operation. The influence of added CO is reported briefly. It is proposed that direct electronic excitation to the vibrational levels of CO and consequent vibrational energy transfer from the CO (v = 1) to the CO2 upper laser level is the most important mechanism when N2 is absent.

NONLINEAR ABSORPTION OF LIGHT. POSITIVE AND NEGATIVE SATURATION EFFECTS IN THE SAME ABSORBER

C. R. Giuliano and L. D. Hess

Appl. Phys. Lett. 12, 292 (1968); http://dx.doi.org/10.1063/1.1651997 (4 pages) | Cited 9 times

Online Publication Date: 17 October 2003

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The optical transmission of platinum dithizonate dissolved in CCl4 was measured as a function of intensity at 6943 Å. When a 35‐nsec pulse is used for excitation the transmission increases from its low‐level value at a power density of 0.1 MW∕cm2, goes through a maximum at 10 MW∕cm2 and then decreases to its low‐level value at 80 MW∕cm2. This material functions effectively as a passive Q switch for ruby and may provide power stabilization as well. A long‐lived cumulative bleaching effect is produced when the output from a non‐Q‐spoiled laser is used for excitation. The transmission behavior of this system at all intensities is discussed in terms of a generalized kinetic mechanism.

A HOLOGRAPHIC MOTION PICTURE FILM WITH CONSTANT VELOCITY TRANSPORT

D. J. De Bitetto

Appl. Phys. Lett. 12, 295 (1968); http://dx.doi.org/10.1063/1.1651998 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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A direct application of the recently published technique of eliminating vertical parallax from holograms is that it permits reconstruction of holographic motion pictures with a constant‐velocity film‐strip motion. We have demonstrated this, both for three‐dimensional holographic movie viewing and for two‐dimensional holographic movie projection.

PULSE RESPONSE OF ELECTRO‐OPTIC MODULATORS AND PHOTOCONDUCTIVE DETECTORS AT 10.6 μ

T. J. Bridges, T. Y. Chang, and P. K. Cheo

Appl. Phys. Lett. 12, 297 (1968); http://dx.doi.org/10.1063/1.1651999 (4 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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Subnanosecond rise time pulses of 10.6‐μ radiation obtained with a GaAs electro‐optic modulator have been used to measure the time response of Cu:Sb, Cu, Hg, and Au doped germanium photoconductive detectors. Ge:Cu:Sb and Ge:Cu detectors yielded the fastest response, ∼1‐nsec rise time (10% to 90%) with a 50‐Ω load, which was circuit limited. Actual material time response of the Ge:Cu:Sb and Ge:Cu detectors and also of the GaAs modulator were determined to be less than 0.5 nsec. No saturation was observed for the Ge:Cu:Sb detector for peak input powers up to 20 W.

DAMAGE IN DOUBLE‐POSITIONED GOLD FILMS BOMBARDED WITH HELIUM IONS

H. Nordén, G. Högberg, and C. J. Andreen

Appl. Phys. Lett. 12, 300 (1968); http://dx.doi.org/10.1063/1.1652000 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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Double‐positioned gold films of (111) orientation are used in a study of the reduction in radiation damage due to channeling.

HOLOGRAPHIC INTERFEROMETRY WITH ULTRAVIOLET LIGHT

R. F. Wuerker, L. O. Heflinger, and R. A. Briones

Appl. Phys. Lett. 12, 302 (1968); http://dx.doi.org/10.1063/1.1652001 (2 pages) | Cited 10 times

Online Publication Date: 17 October 2003

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Simultaneous red and ultraviolet holographic interferograms were recorded on a single Eastman 649F plate by radiation existing after the passage of a Q‐switched ruby laser beam through a KDP crystal. The ultraviolet record had twice the sensitivity to optical path length changes as the red record.

TYPE CONVERSION AND p‐n JUNCTIONS IN n‐CdTe PRODUCED BY ION IMPLANTATION

J. P. Donnelly, A. G. Foyt, E. D. Hinkley, W. T. Lindley, and J. O. Dimmock

Appl. Phys. Lett. 12, 303 (1968); http://dx.doi.org/10.1063/1.1652002 (3 pages) | Cited 22 times

Online Publication Date: 17 October 2003

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Type conversion and p‐n junctions have been produced by the implantation of 400‐keV As+ ions into n‐CdTe. In forward bias, the junctions emit bandgap infrared radiation at room temperature.

CONTINUOUS 0.532‐μ SOLID‐STATE SOURCE USING Ba2NaNb5O15

J. E. Geusic, H. J. Levinstein, S. Singh, R. G. Smith, and L. G. Van Uitert

Appl. Phys. Lett. 12, 306 (1968); http://dx.doi.org/10.1063/1.1652003 (3 pages) | Cited 69 times

Online Publication Date: 17 October 2003

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A continuous 0.532‐μ solid‐state source utilizing the nonlinear material Ba2NaNb5O15 inside the cavity of a 1.064‐μ YAlG:Nd laser has generated 1.1 W of coherent green power. This represents 100% conversion to the green of the available infrared radiation from the YAlG:Nd laser utilized.

CONTINUOUS OPTICAL PARAMETRIC OSCILLATION IN Ba2NaNb5O15

R. G. Smith, J. E. Geusic, H. J. Levinstein, J. J. Rubin, S. Singh, and L. G. Van Uitert

Appl. Phys. Lett. 12, 308 (1968); http://dx.doi.org/10.1063/1.1652004 (3 pages) | Cited 66 times

Online Publication Date: 17 October 2003

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A tunable, optical parametric oscillator using a continuous pump is reported. The threshold was measured to be 45 mW of multimode power at .532 μ. The efficiency was found to be 1% with 300 mW of pump power.

OBSERVATION OF GROWING CARRIER WAVES IN INDIUM ANTIMONIDE

B. E. Burke and G. S. Kino

Appl. Phys. Lett. 12, 310 (1968); http://dx.doi.org/10.1063/1.1652005 (3 pages) | Cited 16 times

Online Publication Date: 17 October 2003

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Measurements of the phase velocity and growth rate of carrier waves in near‐intrinsic InSb are presented. The frequency range is from 10 to 40 MHz and a transverse magnetic of about 2 kG is required. The phase velocity of the wave agrees with predictions of previous theories, but the large growth rates suggest a new type of two‐stream interaction involving surface waves suggested by Kino.

GROWING SURFACE WAVES IN A SEMICONDUCTOR IN THE PRESENCE OF A TRANSVERSE MAGNETIC FIELD

G. S. Kino

Appl. Phys. Lett. 12, 312 (1968); http://dx.doi.org/10.1063/1.1652006 (3 pages) | Cited 21 times

Online Publication Date: 17 October 2003

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Recent observations of growing carrier waves in InSb suggest a new type of interaction involving electrons and holes which leads to a growing surface wave. A theory is presented which shows that the wave has a phase velocity near the electron drift velocity, and in the presence of a transverse magnetic field is unstable with very large growth rates.

RECTIFYING Te☒Se☒Cd STRUCTURES USING A SELENIUM SINGLE‐CRYSTAL FILM

C. H. Champness, C.H. Griffiths, and H. Sang

Appl. Phys. Lett. 12, 314 (1968); http://dx.doi.org/10.1063/1.1652007 (3 pages) | Cited 7 times

Online Publication Date: 17 October 2003

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Rectifying Te☒Se☒Cd structures have been prepared in the laboratory using (1010) and (0001) selenium single‐crystal films. In the forward direction the current density below 1 V follows the rectifier equation for a heterojunction and above 1 V it approaches a quadratic voltage dependence. In the latter voltage region a conventional selenium rectifier, however, shows a linear dependence.

PRODUCTION OF BLAZED HOLOGRAMS

Nicholas K. Sheridon

Appl. Phys. Lett. 12, 316 (1968); http://dx.doi.org/10.1063/1.1652008 (3 pages) | Cited 35 times

Online Publication Date: 17 October 2003

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The concept of the blazed hologram as a special case of the Denisyuk hologram is discussed. Experimental production of blazed holograms is described. Blazed diffraction gratings, a form of blazed hologram, have been produced with 73% of the diffracted light concentrated in one first‐order maximum.

GAUSSIAN BEAMS FROM GaAs JUNCTION LASERS

T. H. Zachos

Appl. Phys. Lett. 12, 318 (1968); http://dx.doi.org/10.1063/1.1652009 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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Gaussian beams have been obtained from a GaAs junction laser operating in conjunction with a microscope objective and a slit. The laser mirror illumination, as viewed in the image plane of the objective, is asymmetric perpendicular to the junction plane and consists of a primary intensity maximum along with several weaker secondary peaks. The slit, placed in the image plane, suppresses the secondary peaks thereby eliminating their effects in the diffraction field. The isolated primary maximum is approximately Gaussian shaped and the radiation emanating from the slit retains its Gaussian profile as it propagates into the far‐field region.

THE EFFECT OF HYDROSTATIC PRESSURE ON CURRENT OSCILLATIONS IN n‐Ge

Peter J. Melz and James C. McGroddy

Appl. Phys. Lett. 12, 321 (1968); http://dx.doi.org/10.1063/1.1652010 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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High pressure measurements made on the current oscillations in n‐Ge show an increase in threshold field and decrease in the amplitude and range of the oscillations with increased pressure. No oscillations are observed above approximately 4 kbars. These results are consistent with the existence of an intraband bulk negative differential conductivity.

MULTIJOULE PULSES FROM CO2 LASERS

Alan E. Hill

Appl. Phys. Lett. 12, 324 (1968); http://dx.doi.org/10.1063/1.1652011 (4 pages) | Cited 26 times

Online Publication Date: 17 October 2003

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See Also: Erratum

Show Abstract
A high voltage transient pumping technique is reported whereby 5‐J 200‐kW CO2 laser pulses have been produced in a 3‐in.‐diam, 8‐ft discharge tube. This device, operating at repetition rates of 35–100 pulses per second, produced 210 W maximum average power. Similar devices of 1‐in. through 6‐in. diameters indicate that, unlike continuous‐wave CO2 lasers, this pulsed system may be extended at least to 6‐in. diam and∕or to total pressures in excess of 60 torr, without severe loss of plasma uniformity. Preliminary scaling experiments indicate that further increases in peak and average power might be achieved.
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ERRATUM: Infrared Quantum Counter Action in Ho‐Doped Crystals

J. G. Gualtieri, G. P. de Lhery, T. R. AuCoin, and J. R. Pastore

Appl. Phys. Lett. 12, 327 (1968); http://dx.doi.org/10.1063/1.1652012 (1 page)

Online Publication Date: 17 October 2003

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