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15 Oct 1968

Volume 13, Issue 8, pp. 247-288


FREEZE‐OUT CHARACTERISTICS OF THE MOS VARACTOR

Peter V. Gray and Dale M. Brown

Appl. Phys. Lett. 13, 247 (1968); http://dx.doi.org/10.1063/1.1652594 (2 pages) | Cited 20 times

Online Publication Date: 17 October 2003

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Experimental MOS C(V) data are obtained in the temperature range over which majority carriers are substantially frozen out (40° − 70°K). These are compared with calculated curves and other calculated curves are presented to show the effect of impurity concentration and compensation. The C(V) curves are characterized by a secondary minimum in capacitance near the flat band bias.

MAGNETIC FIELD MEASUREMENTS IN THE SCANNING ELECTRON MICROSCOPE

R. F. M. Thornley and J. D. Hutchison

Appl. Phys. Lett. 13, 249 (1968); http://dx.doi.org/10.1063/1.1652595 (2 pages) | Cited 10 times

Online Publication Date: 17 October 2003

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The scanning electron microscope has been used to obtain quantitative values for the fields and field gradients emerging from magnetic heads or tapes. The microscope is used to image a known reference detail adjacent to the field source and the fields are computed from the resultant pattern distortion. Gradients are obtained by measuring the resultant astigmatism of the scanning beam. Fields down to 10 Oe were measured from a tape recorded at 100 cycles∕cm.

RELAXATION PHENOMENA IN THE WATER VAPOR LASER

W. Q. Jeffers and P. D. Coleman

Appl. Phys. Lett. 13, 250 (1968); http://dx.doi.org/10.1063/1.1652596 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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Relaxation behavior of 17 water vapor laser lines in the range 23‐ to 79‐μ wavelength, obtained with a split‐discharge laser, is presented. Two discharges are incorporated in the same laser resonator and pulsed at varying times. The laser signal produced by the first discharge then probes the decaying second discharge at subsequent time intervals. Measuring the absorption as a function of time permits one to measure relaxation rates and suggests processes going on at different times. A fall out of this work is some new gain measurements on the 27.97‐ and 118.59‐μ lines.

BRAGG REFLECTION OF LASER LIGHT FROM A PHASE GRATING IN A Q‐SWITCHING LIQUID

R. G. Harrison, P. Key, V. I. Little, G. Magyar, and J. Katzenstein

Appl. Phys. Lett. 13, 253 (1968); http://dx.doi.org/10.1063/1.1652597 (3 pages) | Cited 12 times

Online Publication Date: 17 October 2003

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It is postulated that in a saturable dye absorber used for giant pulse laser switching a phase grating is formed. To prove this experimentally a frequency doubled part of the laser beam was reflected from this ``Lippman plate'' at the Bragg angle.

CO2 LASER‐INDUCED ELECTRON EMISSION FROM METALS

W. W. Duley

Appl. Phys. Lett. 13, 255 (1968); http://dx.doi.org/10.1063/1.1652598 (2 pages)

Online Publication Date: 17 October 2003

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Thermionic emission from molybdenum and tungsten targets irradiated with a cw CO2 laser beam has been observed. The incident energy is ≃ 0.2–0.5 J per pulse at a repetition rate of 120 cps. Peak electron currents are 0.1 mA.

THREE‐PHOTON PHOTOELECTRIC EFFECT IN K3Sb

Fuminori Shiga and Shunji Imamura

Appl. Phys. Lett. 13, 257 (1968); http://dx.doi.org/10.1063/1.1652599 (2 pages) | Cited 4 times

Online Publication Date: 17 October 2003

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Cubic response in photoelectric emission from K3Sb illuminated by a Nd‐glass laser was investigated. Comparison of energy distribution of emitted electrons under the laser irradiation and monochromatic irradiation of natural light (3000–3500 Å) showed that most of the photoelectrons excited by simultaneous absorption of three laser photons were changed in energy distribution by collision with valence electrons.

HYDROGEN MOLECULAR VACUUM ULTRAVIOLET LASER THEORY

A. W. Ali and A. C. Kolb

Appl. Phys. Lett. 13, 259 (1968); http://dx.doi.org/10.1063/1.1652600 (3 pages) | Cited 10 times

Online Publication Date: 17 October 2003

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Calculations indicate that within the Werner band of the H2 molecules laser action is possible at several spectral lines between 1025–1239 Å in a high current discharge with a risetime of a few nsec. The peak power densities are in the kilowatts cm−3 range per spectral line (for strong lines) with pulse half‐width of less than 1 nsec.

THERMOLUMINESCENCE AND PARAMAGNETIC HOLE CENTERS IN BaF2

A. Tzalmona and P. S. Pershan

Appl. Phys. Lett. 13, 262 (1968); http://dx.doi.org/10.1063/1.1652601 (3 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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Thermoluminescence of rare‐earth doped BaF2, irradiated with x rays at 77°K, is interpreted in terms of the appearance and disappearance of three paramagnetic hole centers. One of the centers is associated with an interstitial fluorine.

EXCESS CURRENT GENERATION DUE TO REVERSE BIAS P‐N JUNCTION STRESS

D. R. Collins

Appl. Phys. Lett. 13, 264 (1968); http://dx.doi.org/10.1063/1.1652602 (3 pages) | Cited 12 times

Online Publication Date: 17 October 2003

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A previously unreported method of generating excess p‐n junction current is shown to degrade the current gain of transistors. Experimental evidence indicates the excess current is a surface effect which is not associated with ion drift. Avalanche breakdown is shown to be neither a necessary nor sufficient cause for degradation.

ENHANCEMENT OF SENSITIVITY IN ESCA SPECTROMETERS

J. C. Helmer and N. H. Weichert

Appl. Phys. Lett. 13, 266 (1968); http://dx.doi.org/10.1063/1.1652603 (3 pages) | Cited 47 times

Online Publication Date: 17 October 2003

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In x‐ray photoelectron spectroscopy the electron current may be increased by retarding the source electrons if, at the same time, the design of the spectrometer is matched to the retarded source.

FLUX‐DEPENDENT ASPECTS OF THE EVOLUTION OF ACOUSTOELECTRIC DOMAINS IN n‐GaAs

David L. Spears and Ralph Bray

Appl. Phys. Lett. 13, 268 (1968); http://dx.doi.org/10.1063/1.1652604 (3 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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See Also: Erratum

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Optical probe studies of propagating acoustoelectric domains in n‐GaAs reveal a self‐narrowing of the domain during growth, and an apparent limitation to the peak acoustic density in the domain, illustrating the role of flux‐dependent processes in domain evolution. A mechanism is discussed, based on evidence for changes in spectral composition of the domain at high acoustic intensity.

LOW‐TEMPERATURE EPITAXIAL GROWTH OF PN JUNCTIONS BY UHV SUBLIMATION

R. N. Thomas and M. H. Francombe

Appl. Phys. Lett. 13, 270 (1968); http://dx.doi.org/10.1063/1.1652605 (3 pages) | Cited 4 times

Online Publication Date: 17 October 2003

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The feasibility of growing epitaxial pn junctions at temperatures as low as 550°C by sublimation in UHV has been demonstrated. The junctions, which show abrupt impurity profiles, have excellent and predictable rectification characteristics. Transmission electron microscope studies suggest good crystallographic perfection. The relatively high minority carrier lifetime of 6 μsec which was measured indicates a low concentration of lifetime killing impurities at the junction region.

ELECTRON BEAM MODULATED REFLECTANCE OF GERMANIUM

John H. McCoy and David B. Wittry

Appl. Phys. Lett. 13, 272 (1968); http://dx.doi.org/10.1063/1.1652606 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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A technique for modulation of the reflectance of germanium in the 2–3‐eV range by means of a periodically gated electron beam is described. The relative reflectance curves resemble the thermoreflectance results, but the amplitude varies with the one‐third power of the excess carrier density. The results agree with a theory that at large excess carrier densities the mean distance between carriers is small enough to cause a modification of the crystal potential and therefore to lower critical point transition energies.

PHOTOEMISSION OF ELECTRONS AND HOLES INTO SILICON NITRIDE

Alvin M. Goodman

Appl. Phys. Lett. 13, 275 (1968); http://dx.doi.org/10.1063/1.1652607 (3 pages) | Cited 28 times

Online Publication Date: 17 October 2003

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The photoemission of both electrons and holes from degenerate silicon into thin (160–270 Å) layers of silicon nitride has been observed. The threshold energies for these processes are found to be 3.17 ± 0.1 eV for electrons and 3.06 ± 0.1 eV for holes. In addition, the photoemission of electrons from aluminum into silicon nitride has been observed; the threshold energy in this case is 2.11 ± 0.1 eV. An approximate electron energy band diagram for silicon nitride based on these values is presented.

INTERPRETATION OF THE PERIODICITY IN ENERGY LOSS OF A WELL‐CHANNELED ION WITH RESPECT TO ITS NUCLEAR CHARGE

Don E. Harrison

Appl. Phys. Lett. 13, 277 (1968); http://dx.doi.org/10.1063/1.1652608 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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The Z1 periodicity in the inelastic energy loss cross section is shown to be contained in the electron density of the moving ions when that density is determined from Hartree—Fock—Slater wavefunctions.

THE DYNAMIC RESPONSE OF SOLIDS EXPOSED TO A PULSED‐ELECTRON‐BEAM

R. B. Oswald, D. R. Schallhorn, H. A. Eisen, and F. B. McLean

Appl. Phys. Lett. 13, 279 (1968); http://dx.doi.org/10.1063/1.1652609 (3 pages) | Cited 16 times

Online Publication Date: 17 October 2003

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The first measurements of free surface displacement and velocity induced by the absorption of a pulse of electrons in a solid are reported. The laser‐interferometric measurements demonstrate that the dynamic response of materials induced by charged particle interaction can be observed in detail.

LASER INDUCED UNDERWATER SPARKS

Peter A. Barnes and K. E. Rieckhoff

Appl. Phys. Lett. 13, 282 (1968); http://dx.doi.org/10.1063/1.1652611 (3 pages) | Cited 43 times

Online Publication Date: 17 October 2003

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Measurements have been taken of the radiative flux density, the spectrum, and the temporal behavior of laser induced underwater sparks. When a 30‐MW Q‐switched ruby laser was focused into water, the resulting spark revealed a blackbody‐like spectrum with a temperature of 15 000°K. The spark was delayed in time by 15 nsec with respect to the laser pulse and had a temporal behavior very similar to the laser pulse producing it.

THERMAL SELF‐FOCUSING OF LASER BEAMS IN LEAD GLASSES

F. W. Dabby and J. R. Whinnery

Appl. Phys. Lett. 13, 284 (1968); http://dx.doi.org/10.1063/1.1652612 (3 pages) | Cited 38 times

Online Publication Date: 17 October 2003

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Strong thermal self‐focusing of an argon laser beam has been observed when the beam passes through lead glass. Focal lengths of less than 20 cm were obtained. The beams showed the effects of spherical aberration and at certain power levels beam trapping occurred. A simple theory is proposed to explain the observed trapping. Computer solutions have been obtained which reasonably agree with experimental determination of focal planes and spot radius.

VACUUM DEPOSITION OF AlN ACOUSTIC TRANSDUCERS

M. T. Wauk and D. K. Winslow

Appl. Phys. Lett. 13, 286 (1968); http://dx.doi.org/10.1063/1.1652613 (3 pages) | Cited 25 times

Online Publication Date: 17 October 2003

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Thin‐film microwave acoustic transducers of piezoelectric aluminum nitride (AlN) have been vacuum deposited by two methods. Aluminum nitride was deposited on metallic film substrates at 300°–1200°C by evaporating aluminum in the presence of either nitrogen gas dissociated in an ac discharge or in the presence of ammonia gas. Longitudinal ultrasonic waves were generated in a sapphire rod with a one‐way‐tuned conversion loss of 10 dB at 1700 MHz.
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ERRATA: Near‐Band Edge Luminescence in GaAs:Zn

George W. Arnold and David K. Brice

Appl. Phys. Lett. 13, 288 (1968); http://dx.doi.org/10.1063/1.1652614 (1 page)

Online Publication Date: 17 October 2003

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Abstract Unavailable
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ERRATA: Resonant and Round‐Trip Gain for Acoustoelectric Domain in n‐InSb

V. Dolat, J. B. Ross, and R. Bray

Appl. Phys. Lett. 13, 288 (1968); http://dx.doi.org/10.1063/1.1652615 (1 page)

Online Publication Date: 17 October 2003

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