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1 Nov 1968

Volume 13, Issue 9, pp. 289-330


DETECTION OF FAST INFRARED LASER PULSES WITH THIN FILM THERMOCOUPLES

G. W. Day, O. L. Gaddy, and R. J. Iversen

Appl. Phys. Lett. 13, 289 (1968); http://dx.doi.org/10.1063/1.1652616 (2 pages) | Cited 12 times

Online Publication Date: 17 October 2003

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A thin‐film thermocouple detector, suitable for use with molecular lasers operating in the middle and far infrared has been developed. Measured response times are approximately 10−7 sec. The noise equivalent power is of the order of 10−7 W∕Hz.

DOPANT DEPENDENCY OF FERMI LEVEL LOCATION IN HEAVILY DOPED SILICON

T. F. Tao and Yukun Hsia

Appl. Phys. Lett. 13, 291 (1968); http://dx.doi.org/10.1063/1.1652617 (2 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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Results obtained from the study of the incremental conductance of metal to heavily doped n‐type Si barrier tunneling as a function of bias voltage are presented. The Si is variously doped with P, As, and Sb. Experimental data indicate that the location of Fermi level is strongly dependent on dopant types.

P‐N JUNCTIONS AS ARTIFICIAL DIFFUSION BARRIERS FOR NATIVE DEFECTS

M. Aven, R. B. Hall, and W. Garwacki

Appl. Phys. Lett. 13, 292 (1968); http://dx.doi.org/10.1063/1.1652618 (4 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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A diffusion anomaly of a native acceptor defect in ZnSexTe1−x p‐n junctions is described. The diffusivities of this defect in n‐ and p‐type crystals at 575°C have been determined. The anomaly can be utilized in a triple‐diffusion technique of preparing p‐n junction diodes with improved electrical properties.

THE PRESENCE OF DEEP LEVELS IN ION IMPLANTED JUNCTIONS

R. G. Hunsperger, O. J. Marsh, and C. A. Mead

Appl. Phys. Lett. 13, 295 (1968); http://dx.doi.org/10.1063/1.1652619 (3 pages) | Cited 15 times

Online Publication Date: 17 October 2003

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It has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zinc‐implanted GaAs diodes has been observed for the case of 70‐kV implantation at 400°C into substrates with n‐type concentrations ranging from 1 × 1016 to 1.8 × 1018 atoms∕cm3. Capacitance‐voltage measurements have indicated the presence of a semi‐insulating layer in the diodes, varying in thickness from 0.18 μ for the most heavily doped substrate to 2.7 μ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels.

ZEEMAN SPLITTING USED TO INCREASE ENERGY FROM A Q‐SWITCHED IODINE LASER

David W. Gregg, Ray E. Kidder, and Champe V. Dobler

Appl. Phys. Lett. 13, 297 (1968); http://dx.doi.org/10.1063/1.1652620 (2 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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Magnetic broadening of the iodine lasing line was found to increase the energy storage capability of the laser and thus increase the energy obtainable in a Q‐switched pulse from a few millijoules to a few tenths of a joule.

GAIN INTERACTION AND DYNAMICAL BEHAVIOUR OF A MULTIMODE He☒Ne LASER

A. Bambini and P. Burlamacchi

Appl. Phys. Lett. 13, 299 (1968); http://dx.doi.org/10.1063/1.1652621 (2 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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The buildup of the modes of a He☒Ne laser in the presence of other strongly oscillating modes was analyzed. Owing to the gain interaction the buildup time was found to be about one order of magnitude greater than for freely growing modes and to be greatly dependent on the position of the modes under the Doppler curve. The active bandwidth for the low‐frequency noise due to the presence of combination tones near the modes was derived from these measurements.

SELF‐LOCKING OF THREE MODES IN THE He☒Ne LASER

D. G. C. Jones

Appl. Phys. Lett. 13, 301 (1968); http://dx.doi.org/10.1063/1.1652622 (2 pages) | Cited 4 times

Online Publication Date: 17 October 2003

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An approximate criterion for the self‐locking of three laser modes is developed from Lamb theory and tested against experiment.

LOCKING A LASER FREQUENCY TO THE TIME STANDARD

Z. Bay and G. G. Luther

Appl. Phys. Lett. 13, 303 (1968); http://dx.doi.org/10.1063/1.1652623 (2 pages) | Cited 9 times

Online Publication Date: 17 October 2003

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On the basis of high‐frequency modulation experiments and well‐known locking techniques, a scheme is described for stabilizing a visible laser frequency and simultaneously determining that frequency in terms of the time standard. The importance of this method for a refined determination of the velocity of light and the possibility of establishment of reference lines for spectroscopy and for length measurements, throughout the spectrum wherever laser lines are available, is discussed.

NEW HIGH‐POWER STABLE MODES OF OPERATION OF THE ARGON LASER

J. M. Yarborough and J. L. Hobart

Appl. Phys. Lett. 13, 305 (1968); http://dx.doi.org/10.1063/1.1652624 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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We report several new high‐power stable modes of operation of the argon laser. These types of operation are characteristic of the laser itself; no mode‐selecting techniques are used. We have observed output powers of 2 W with up to 90% of the power in a single optical frequency, as well as several other new stable output spectra.

MICROWAVE ECHOES IN GASEOUS NH3

J. L. Jenkins and Peter E. Wagner

Appl. Phys. Lett. 13, 308 (1968); http://dx.doi.org/10.1063/1.1652625 (2 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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Echoes have been observed at microwave frequencies, resulting from electromagnetic field excitation of electric dipole transitions between inversion states in gaseous NH3. This paper reports preliminary observations made on a microwave echo spectrometer to be used to investigate homogeneous relaxation processes.

MEASUREMENT OF SOUND VELOCITIES IN CRYSTALS USING BRAGG DIFFRACTION OF LIGHT AND APPLICATIONS TO LANTHANUM FLUORIDE

Charles Krischer

Appl. Phys. Lett. 13, 310 (1968); http://dx.doi.org/10.1063/1.1652626 (2 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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A method of measuring sound velocities in crystals using Bragg diffraction of light by ultrasonic waves is described. Sound‐velocity data presented for LaF3 are consistent with a trigonal crystal structure and exclude the possibility of a hexagonal structure.

HIGH‐PERFORMANCE LITHIUM NIOBATE ACOUSTIC SURFACE WAVE TRANSDUCERS AND DELAY LINES

J. H. Collins, H. M. Gerard, and H. J. Shaw

Appl. Phys. Lett. 13, 312 (1968); http://dx.doi.org/10.1063/1.1652627 (2 pages) | Cited 16 times

Online Publication Date: 17 October 2003

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Radiation resistance measurements have been made on 20 electrode pair interdigital transducers deposited on poled crystals of lithium niobate, for a variety of cuts and propagation directions, with the objective of determining optimum geometries for the efficient wideband generation of acoustic Rayleigh waves. Using Y cut, Z axis propagating lithium niobate and five‐electrode pair transducers a 100‐MHz delay line has been constructed with an insertion loss of 11.5 dB at a delay of 8.9 μsec, and a −3‐dB bandwidth of 24 MHz.

AMPLIFICATION OF ACOUSTIC SURFACE WAVES WITH ADJACENT SEMICONDUCTOR AND PIEZOELECTRIC CRYSTALS

J. H. Collins, K. M. Lakin, C. F. Quate, and H. J. Shaw

Appl. Phys. Lett. 13, 314 (1968); http://dx.doi.org/10.1063/1.1652628 (3 pages) | Cited 37 times

Online Publication Date: 17 October 2003

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Strong interaction between the wave on the surface of a piezoelectric crystal and the wave on the drifting carriers in a nearby semiconductor is reported. Amplification can result and two‐port net terminal gain of 7 dB at 108 MHz with a delay of 9 μsec has been observed.

CO2 LASER LINEWIDTH BY MEASUREMENT OF STEP RESPONSE

T. J. Bridges, H. A. Haus, and P. W. Hoff

Appl. Phys. Lett. 13, 316 (1968); http://dx.doi.org/10.1063/1.1652629 (3 pages) | Cited 8 times

Online Publication Date: 17 October 2003

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Fast rise pulses from a GaAs electrooptic switch are used to measure the small signal time response to a step of radiation, of a 20 dB, homogeneously broadened CO2, He, N2 laser amplifier. By comparing the observed shape of the time response (rise time ≈ 15 nsec) with theory, the value of T2, the homogeneous relaxation time, and hence the linewidth is obtained as a function of gas pressure. The doppler broadening (59 MHz), pressure broadening (4.67 MHz∕Torr) and gas temperature (372°K) are obtained.

PHOTOCHROMIC CHANGE IN REFRACTIVE INDEX

J. M. Hammer

Appl. Phys. Lett. 13, 318 (1968); http://dx.doi.org/10.1063/1.1652630 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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Light‐induced changes in the refractive index of transition metal doped SrTiO3 has been observed. This is the first observation of photochromic index of refraction changes. The measurements are made by observing the variation of transmission of a Fabry‐Perot cavity made of the material studied. Changes in the index of refraction of 1–5 × 10−5 per unit change in optical density per centimeter are found. These values agree reasonably well with values calculated from the measured absorption curves.

TEMPERATURE DEPENDENCE OF CONCENTRATION FLUCTUATIONS IN A BINARY LIQUID MIXTURE USING A PHOTON CORRELATION METHOD

P. N. Pusey and W. I. Goldberg

Appl. Phys. Lett. 13, 321 (1968); http://dx.doi.org/10.1063/1.1652631 (3 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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A photon correlation method has been demonstrated to be effective in measuring the width of narrow spectral lines of relatively low intensity. The method has been used to measure the temperature dependence of the diffusion constant in the phenol‐water system. It was found that D ∝ (T − Tc)0.76±0.02 for 1° ≲ T − Tc ≲ 15°C.

ELASTIC SURFACE WAVES ON LAYERED ANISOTROPIC CRYSTALS

D. S. Loftus

Appl. Phys. Lett. 13, 323 (1968); http://dx.doi.org/10.1063/1.1652633 (4 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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A general numerical method has been developed for the determination of the modes of propagation, phase velocities, displacements, magnitude and direction of energy flow of elastic surface waves when any layer of anisotropic material is in contact with any underlying semi‐infinite anisotropic crystal. Such characteristics have been calculated for a variety of anisotropic layer and crystal combinations. Typical results are presented.

EVIDENCE FOR DIRECTIONAL COUPLING BETWEEN SEMICONDUCTOR CARRIERS AND SLOW CIRCUIT WAVES

Masao Sumi and Toshimasa Suzuki

Appl. Phys. Lett. 13, 326 (1968); http://dx.doi.org/10.1063/1.1652634 (2 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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An experiment on the interaction between drifting carriers in semiconductors and slow electromagnetic waves in external circuit was performed. Carriers in n‐type InSb were coupled with slow waves through meander‐type and helix‐type circuits at 77°K. Measurements of transmitted microwave power through these systems give clear evidence for directional coupling by this sort of interaction.

ELECTRIC‐FIELD‐INDUCED SHIFT OF THE INTERFERENCE PEAKS OF THIN TANTALUM OXIDE FILMS

A. Frova and P. Migliorato

Appl. Phys. Lett. 13, 328 (1968); http://dx.doi.org/10.1063/1.1652635 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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The electric‐field‐induced shift to higher energies of the interference peaks of thin tantalum oxide films was observed. The effect has been described in terms of a quadratic electro‐optic coefficient g12 which shows a dispersion when the region of absorption is approached.
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ERRATUM: Band Edge Shift of CdCr2Se4 near Curie Temperature

C. P. Wen, B. Hershenov, H. von‐Philipsborn, and H. Pinch

Appl. Phys. Lett. 13, 330 (1968); http://dx.doi.org/10.1063/1.1652636 (1 page)

Online Publication Date: 17 October 2003

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