APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

15 Jun 1969

Volume 14, Issue 12, pp. 365-396


PREPARATION OF LITHIUM FOR TRANSMISSION ELECTRON MICROSCOPY

S. L. Sass

Appl. Phys. Lett. 14, 365 (1969); http://dx.doi.org/10.1063/1.1652688 (2 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Li foils for transmission electron microscopy were prepared by shaving a Li bar in a dry box under an Ar atmosphere. The specimen was transferred to the microscope using a modified Hitachi specimen exchange device. Li single‐crystal diffraction patterns were observed. The microstructure consisted of small grains containing rapidly moving dislocations.

ELECTRON MICROSCOPY OBSERVATIONS OF THE DISLOCATION STRUCTURE IN LITHIUM CRYSTALS

P. Pétroff and B. Jouffrey

Appl. Phys. Lett. 14, 366 (1969); http://dx.doi.org/10.1063/1.1652689 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Li thin foils of 1‐μ thickness or more were observed by conventional electron microscopy with 100‐keV electrons. The dislocation structure has been analyzed at 300°K and around 100°K in the bcc phase of Li. Dislocation slip planes are of the {112} types and most dislocations are parallel to 〈110〉 directions.

DIRECT VIDEO IMAGING OF X‐RAY TOPOGRAPHS

Eugene S. Meieran, John K. Landre, and Sydney O'Hara

Appl. Phys. Lett. 14, 368 (1969); http://dx.doi.org/10.1063/1.1652690 (4 pages) | Cited 6 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
In this paper, a video display system for direct imaging of transmission and reflection x‐ray topographs of Si and GaAs wafers is described. This system allows instantaneous viewing of x‐ray topographs with fields of view on the order of 2 cm by 1 cm. The resolution of the system is now limited by the sensitivity of the x‐ray phosphor to about 30 μ. Slip bands and diffused devices have been directly observed in both Si and GaAs, as have been accidentally induced damage such as scratches and wafer warpage. Also, Laue patterns for orientation of wafers and ingots can be directly viewed, eliminating the time consuming method of film techniques.

EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATION

A. G. Foyt, J. P. Donnelly, and W. T. Lindley

Appl. Phys. Lett. 14, 372 (1969); http://dx.doi.org/10.1063/1.1652691 (3 pages) | Cited 26 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Efficient doping of GaAs by ion implantation has been obtained using Se+ ions. For a Se+ dose of 3 × 1012∕cm2 implanted at 400 keV, a peak carrier concentration of 2 × 1017∕cm3 occurred at a depth of 750 Å, with a standard deviation of 500 Å. Integration of the excess carrier concentration caused by the implantation indicates that for this ion dose at least 50% of the implanted ions are electrically active. For larger doses the doping efficiency decreases, and the carrier concentration approaches a limiting value of approximately 1019∕cm3. The lowest observed sheet resistance for the implanted layer, about 250 Ω∕square, occurred for a Se+ dose of 2 × 1014∕cm2.

SHALLOW LEVEL TRAPPING AND DETRAPPING IN Si(Li) DETECTORS AT LOW TEMPERATURES

M. Martini and T. A. McMath

Appl. Phys. Lett. 14, 374 (1969); http://dx.doi.org/10.1063/1.1652693 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Trapping‐detrapping pulse shapes have been observed in two Si(Li) detectors in the temperature range 8.5–70°K. A semiquantitative treatment leads to the conclusion that shallow trapping levels are responsible for the observed phenomena. It appears likely that these levels correspond to the donor (Li) and acceptor (B) dopants; if this hypothesis is confirmed by further experimental work it establishes a low‐temperature limit on the use of semiconductor detectors for γ‐ray and high‐energy particle spectroscopy.

``LAMB DIP'' SPECTROSCOPY APPLIED TO SF6

Paul Rabinowitz, R. Keller, and J. T. LaTourrette

Appl. Phys. Lett. 14, 376 (1969); http://dx.doi.org/10.1063/1.1652694 (3 pages) | Cited 24 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Line centers of a number of previously unresolved SF6 transitions of the fundamental ν3 band have been observed and their frequencies have been determined relative to the P‐branch transitions of the CO2 10.6‐μ laser. Measurements of dip widths at small saturation levels yielded a determination of the SF6☒SF6 cross section for phase interruption. Observation of a multiplicity of absorption line centers over the tuning range of the P(20) laser transition, several well within one SF6 Doppler width of 29 MHz, verifies the complex nature of the P(20) line absorption found by other workers.

ABSORPTION OF CO2 LASER LINES BY SF6

Fujio Shimizu

Appl. Phys. Lett. 14, 378 (1969); http://dx.doi.org/10.1063/1.1652695 (3 pages) | Cited 17 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Absorption of CO2 laser lines by SF6 was studied by several methods for various P laser lines of the 00°1–10°0 band. It is concluded that the absorption of the P20 line is mainly due to the several SF6 lines with J values between 50 and 80.

MEASUREMENTS OF SUBNANOSECOND ``FILAMENT'' PULSES USING THE CONVOLUTION TECHNIQUE

Michael M. T. Loy and Y. R. Shen

Appl. Phys. Lett. 14, 380 (1969); http://dx.doi.org/10.1063/1.1652696 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The well‐known convolution technique was used to measure subnanosecond pulses generated from ``filaments'' in a self‐focused beam. The results showed that in toluene, the pulse width varied from 200 to 100 psec or less, and the peak power was about 30 kW.

ELECTRON DENSITIES AND TEMPERATURES IN A CLOSE‐SPACED CESIUM PLASMA DIODE

W. H. Reichelt

Appl. Phys. Lett. 14, 382 (1969); http://dx.doi.org/10.1063/1.1652697 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Spectrographic techniques have been used to determine electron temperatures and densities in the interelectrode plasma of a close‐spaced high‐current cesium plasma diode. These results were obtained from the relative intensity of the radiative recombination continuum and measured line‐widths, respectively, of cesium. The diode was operated at two short‐circuit current conditions (∼15 and 18 A∕cm2) with an interelectrode spacing of 0.25 mm. Contrary to some theories, these results indicate that steep temperature gradients do exist in the plasma and that maximum electron temperatures are 2800°K.

HIGH‐POWER OPERATION OF PULSED WATER‐VAPOR LASER AND PRECISION WAVELENGTH MEASUREMENT OF THE STRONGEST COMPONENT

R. A. McFarlane and L. H. Fretz

Appl. Phys. Lett. 14, 385 (1969); http://dx.doi.org/10.1063/1.1652698 (2 pages) | Cited 5 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The pulsed water‐vapor laser has been operated at peak output power levels of 5 kW (all lines) and an average power of ¼ W. The frequency of the most energetic component of the emission has been measured to be ν = 357.506 ± 0.003 cm−1.

PEAK EFFECT IN A TYPE‐I SUPERCONDOCTOR (LEAD)

H. Levy and P. P. M. Meincke

Appl. Phys. Lett. 14, 387 (1969); http://dx.doi.org/10.1063/1.1652699 (2 pages) | Cited 1 time

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The peak effect has been produced in lead in the intermediate state near 0.8 Hc, where flux motion is known to occur. The field‐independent pinning centers were introduced by spark‐drilling small holes through the sample.

TRANSITION TEMPERATURES OF LAMINATED INTERMETALLIC COMPOUNDS Nb3Sn AND Nb3Al0.8Ge0.2

Eihachiro Tanaka, Takeji Fukuda, Shoji Kuma, Tsutomu Yamashita, and Yutaka Onodera

Appl. Phys. Lett. 14, 389 (1969); http://dx.doi.org/10.1063/1.1652700 (2 pages) | Cited 6 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
In the present report, data are presented on the transition temperatures and the critical currents of laminated Nb3Sn and Nb3Al0.8Ge0.2 tapes. The samples were prepared by rolling techniques and diffusion process. At first, the plates were prepared by accumulating foils of materials alternatively. Then the plates were rolled to a flexible tape and heat‐treated. By heat treatment the transition temperature Tc of Nb3Sn tape increases and reaches the constant value ≃ 18.0°K for 10 min at 1050°C. For Nb3Al0.8Ge0.2, Tc = 19.2°K is obtained by heat treatment at 1600°C for 1 min and annealing at 760°C for 2 h. The critical currents of the samples are discussed.

AN ELECTRON‐MIRROR INFRARED IMAGE CONVERTER USING VITREOUS SELENIUM‐BISMUTH PHOTOCONDUCTING LAYERS

C. W. Bates and L. England

Appl. Phys. Lett. 14, 390 (1969); http://dx.doi.org/10.1063/1.1652701 (3 pages) | Cited 10 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
An electron‐mirror infrared image converter using a 4‐μ‐thick layer of 95 at. % of Se and 5 at. % of Bi as both mirror and target has been constructed. Preliminary measurements indicate that the device has a sensitivity of 0.13 μA per μW per cm2 at a wavelength of 9600 Å.

MEASUREMENT OF TRANSITION SPEED OF JOSEPHSON JUNCTIONS

W. C. Stewart

Appl. Phys. Lett. 14, 392 (1969); http://dx.doi.org/10.1063/1.1652702 (3 pages) | Cited 4 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The speed of the transition between the pair tunneling state and the single‐particle tunneling state of Josephson junctions is in the nanosecond region for sufficiently large junction areas and low critical currents. The transition time varies with junction capacitance and inversely with critical current. The delay is calculated to be small compared to the transition time.

REGENERATIVE JOSEPHSON EFFECT DETECTOR FOR FAR‐INFRARED RADIATION

P. L. Richards and S. A. Sterling

Appl. Phys. Lett. 14, 394 (1969); http://dx.doi.org/10.1063/1.1652703 (3 pages) | Cited 18 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Experimental evidence is presented for feedback‐narrowed far‐infrared response of a point contact Josephson junction which is strongly coupled to a resonant cavity. The observed response shows high sensitivity (NEP≲10−14W/math) and frequency selectivity (Q≳103) and so is of value as a tunable narrow‐band detector of millimeter and submillimeter wave radiation. The Werthamer‐Shapiro theory of the nonlinear coupling of junction current to a resonant cavity has been extended to include the effect of applied radiation at the cavity resonance frequency and is shown to account for the feedback narrowing.
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close