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1 Jan 1969

Volume 14, Issue 1, pp. 3-41


INVESTIGATION OF LOW POWER LASER SIGNALS WITH PICOSECOND RESOLUTION

D. Gloge and R. Roldan

Appl. Phys. Lett. 14, 3 (1969); http://dx.doi.org/10.1063/1.1652646 (2 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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A device is described that employs second harmonic generation to analyze the output from low‐power lasers. It consists of a calcite beam splitter and a KDP second‐harmonic generator. Its high sensitivity and resolution are demonstrated by investigating the output from several free‐running cw GaAs lasers.

AN IRRADIATION EFFECT IN THERMALLY GROWN SiO2

Oliver C. Wells

Appl. Phys. Lett. 14, 5 (1969); http://dx.doi.org/10.1063/1.1652653 (2 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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See Also: Erratum

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Thermally grown silicon dioxide layers were irradiated with kilovolt electrons, and the equilibrium surface potential was measured by passing the secondary electrons through an energy analyser. The incident electrons at 5‐keV energy penetrate for 3300 Å into a 5700‐Å oxide film. The observed equilibrium surface potential is initially less than 1 V which indicates efficient induced conductivity; but after 10 C∕cm2 it is −30 V (which indicates that the conductivity has diminished); and finally at 20 C∕cm2 it is less than 1 V again. Annealing reverses the process. A model is proposed.

TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS

S. T. Picraux, J. E. Westmoreland, J. W. Mayer, R. R. Hart, and O. J. Marsh

Appl. Phys. Lett. 14, 7 (1969); http://dx.doi.org/10.1063/1.1652655 (3 pages) | Cited 30 times

Online Publication Date: 17 October 2003

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The temperature dependence of lattice disorder created in Si by 40‐keV Sb ions was studied by energy analysis of the yield of backscattered 1‐MeV He ions incident along 〈111〉 and 〈110〉 axes. Doses of ∼ 1 × 1013 Sb ions∕cm2 were used so that the disorder level was below that representing an amorphous layer. The disorder per incident ion decreases strongly with implant temperature above 50°C. This is approximately 100°C lower than the region of corresponding decrease in the anneal of a low‐dose room‐temperature implantation. For implantation temperatures less than 50°C, the disorder per ion was only mildly temperature‐dependent.

GENERATION OF COHERENT ULTRASONIC WAVES WITH GaAs GUNN OSCILLATOR

H. Hayakawa, T. Ishiguro, N. Mikoshiba, and M. Kikuchi

Appl. Phys. Lett. 14, 9 (1969); http://dx.doi.org/10.1063/1.1652656 (2 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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The experimental success in the generation of coherent ultrasonic waves from a GaAs Gunn oscillator with a dc pulse is reported. The frequency of the ultrasound is independent of the mechanical eigenfrequency of the oscillator.

FORWARD CURRENT‐VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON

A. N. Saxena

Appl. Phys. Lett. 14, 11 (1969); http://dx.doi.org/10.1063/1.1652637 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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An analysis of the forward current‐voltage data for a temperature range of 77.2° to 423°K on a Cr☒Si (ND = 7 × 1018 cm−3) Schottky barrier diode is given. The I‐V behavior of such a diode, which obviously does not follow the simple Schottky theory, is not explained by the more recent calculations of Padovani and Stratton, and of Crowell and Rideout in which field emission is taken into account. It is observed that the peak in differential resistance and its variation with voltage on such a diode is in reasonable agreement with the theories of Stratton and Padovani, and of Crowell and Rideout.

COMPRESSION OF PULSES FROM A MODE‐LOCKED He☒Ne LASER

M. A. Duguay and J. W. Hansen

Appl. Phys. Lett. 14, 14 (1969); http://dx.doi.org/10.1063/1.1652638 (3 pages) | Cited 26 times

Online Publication Date: 17 October 2003

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Pulses of 500‐psec duration, emitted by a mode‐locked He☒Ne laser, have been electro‐optically frequency swept and then compressed to 270 psec by multiple reflections from an interferometer proposed by Gires and Tournois.

STUDY OF INHOMOGENEITIES IN GaAs USING A SCANNING ELECTRON MICROSCOPE

B. R. McAvoy, D. Green, D. W. Ing, and R. W. Ure

Appl. Phys. Lett. 14, 16 (1969); http://dx.doi.org/10.1063/1.1652639 (3 pages) | Cited 5 times

Online Publication Date: 17 October 2003

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A scanning electron microscope was used to observe the bulk electrovoltaic effect in GaAs devices. Displays showing the distribution of inhomogeneities of carrier concentration over an area of a sample of bulk or epitaxial GaAs were produced. A correlation was found between the device performance and the inhomogeneity distribution observed in the material.

CURRENT CONTROLLED NEGATIVE DIFFERENTIAL RESISTIVITY OF P‐TYPE TELLURIUM

Günter Nimtz and Karlheinz Seeger

Appl. Phys. Lett. 14, 19 (1969); http://dx.doi.org/10.1063/1.1652640 (3 pages) | Cited 16 times

Online Publication Date: 17 October 2003

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Current‐voltage measurements made with p‐type tellurium at 77°K are reported. Voltage pulses sufficiently short to avoid the formation of electroacoustic domains were applied to the sample. The small deviations from Ohm's law at low current densities are interpreted by polar optical mode scattering and scattering by lattice defects. At a field strength of 3 kV∕cm there is a region of negative differential resistivity in the transition to current densities an order of magnitude larger. A change in effective mass by intervalley transition of hot holes is discussed.

THE EFFECT OF TRAPPING STATES ON TUNNELING IN METAL‐SEMICONDUCTOR JUNCTIONS

G. H. Parker and C. A. Mead

Appl. Phys. Lett. 14, 21 (1969); http://dx.doi.org/10.1063/1.1652641 (3 pages) | Cited 41 times

Online Publication Date: 17 October 2003

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The tunneling behavior of Schottky barriers has been investigated by several authors. The I‐V characteristics exhibit an exponential form in the forward direction which can be used to determine the energy vs complex momentum dispersion relation for charge carriers in the forbidden gap. In this paper we show that under proper conditions the presence of traps can increase the tunneling probability and result in a reduction in the slope of the log I vs V characteristic by a factor of 2.

TIME AVERAGE HOLOGRAPHY EXTENDED

C. C. Aleksoff

Appl. Phys. Lett. 14, 23 (1969); http://dx.doi.org/10.1063/1.1652642 (2 pages) | Cited 23 times

Online Publication Date: 17 October 2003

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It is demonstrated that the usefulness of time‐average holography in analyzing vibration can be extended by modulating the reference beam.

ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION‐GROWN, P‐TYPE GaP

L. M. Foster, J. F. Woods, and J. E. Lewis

Appl. Phys. Lett. 14, 25 (1969); http://dx.doi.org/10.1063/1.1652643 (3 pages) | Cited 10 times

Online Publication Date: 17 October 2003

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The hole concentration determined from Hall effect measurements on Zn‐doped, solution‐grown GaP was found to exceed the Zn concentration. It has not been established whether the effect is due to additional acceptor defects introduced simultaneously with the Zn, or to an anomalously small Hall mobility∕drift mobility ratio.

A THEORETICAL EXPLANATION OF THE LOW‐FIELD MICROWAVE EMISSION FROM InSb

W. Harth and R. Jaenicke

Appl. Phys. Lett. 14, 27 (1969); http://dx.doi.org/10.1063/1.1652644 (3 pages) | Cited 9 times

Online Publication Date: 17 October 2003

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A theory is presented for the microwave emission from n‐InSb at 77°K in the presence of magnetic and low electric fields using Maxwellian electron velocity distribution and piezoelectric coupling between sound and plasma waves. The case of crossed fields is discussed in detail. Magnetoresistance effect and Doppler‐shifted acoustic cyclotron resonance are the essential mechanisms which determine the magnetic field dependence of the microwave emission.

INFRARED UP CONVERSION IN LITHIUM‐NIOBATE WITH LARGE BANDWIDTH AND SOLID ACCEPTANCE ANGLE

J. E. Midwinter

Appl. Phys. Lett. 14, 29 (1969); http://dx.doi.org/10.1063/1.1652645 (4 pages) | Cited 16 times

Online Publication Date: 17 October 2003

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We report the experimental study of the up‐conversion of infrared radiation in the range 2.0 to 4.0 μ in lithium niobate with a Nd‐YAG laser pump, under conditions of phase‐matching which are simultaneously noncritical in both infrared input angle and wavelength. An increase in the phase‐matched bandwidth of nearly two orders of magnitude was observed over previous work.

FOUR‐PHOTON OPTICAL PARAMETRIC NOISE IN WATER

Donald L. Weinberg

Appl. Phys. Lett. 14, 32 (1969); http://dx.doi.org/10.1063/1.1652647 (3 pages) | Cited 19 times

Online Publication Date: 17 October 2003

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Optical parametric noise has been produced in a centrosymmetric medium, water, by a 9‐MW ruby laser beam. The wavelengths, in the visible, and the angles of emission agree with the tuning curve calculated for a phase‐matched four‐photon process. A power of ≈☒μW emitted into a 38‐Å band is observed in the low‐loss wavelength range, in approximate agreement with theory. Very strong idler absorption has little apparent effect on the signal power or bandwidth.

PIEZOELECTRIC PROPERTIES OF Ba2 NaNb5 O15

A. W. Warner, G. A. Coquin, A. H. Meitzler, and J. L. Fink

Appl. Phys. Lett. 14, 34 (1969); http://dx.doi.org/10.1063/1.1652648 (2 pages) | Cited 9 times

Online Publication Date: 17 October 2003

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Single‐crystal Ba2NaNb5O15 (z plate) has been found to have a piezoelectric coupling factor in the thickness longitudinal mode kt equal to 0.57. As a value of kt determined by direct measurement, this result is the highest value yet reported for a single‐crystal ferroelectric material usable at and above room temperature. Since this material has good mechanical handling characteristics, a relatively low dielectric constant (ϵ33S/ϵ0 = 30), and a pure mode of vibration, plates of this material are attractive for applications as high‐frequency longitudinal mode transducers. The approximate values of the thickness shear mode coupling factors for x and y plates are k15 = 0.20 and k24 = 0.20.

PRODUCTION OF FAST JETS OF IONIZED BARIUM USING EXPLOSIVE SHAPED CHARGES

J. Hunter, G. Martelli, K. S. Martin, and P. Rothwell

Appl. Phys. Lett. 14, 35 (1969); http://dx.doi.org/10.1063/1.1652649 (3 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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Barium jets have been produced in a series of preliminary ground tests using the shaped‐charge technique; this suggests that ionized barium metal streams may be injected in this way into the ionosphere with the object of measuring ionospheric electric fields.

EXCITATION OF ACOUSTIC WAVES IN A CO2 DISCHARGE PLASMA

V. L. Exner and L. Pekárek

Appl. Phys. Lett. 14, 37 (1969); http://dx.doi.org/10.1063/1.1652650 (2 pages) | Cited 3 times

Online Publication Date: 17 October 2003

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A relatively slight voltage pulse disturbance produces an acoustic wave in a CO2 dc discharge. The amplitude is so large that indirect indication by means of changed light intensity in the column is possible. An explanation of high efficiency of excitation is proposed in terms of dissociation of CO2 molecules.

CURRENT OSCILLATIONS IN PHOTOEXCITED GALLIUM‐ARSENIDE

Walter Viehmann

Appl. Phys. Lett. 14, 39 (1969); http://dx.doi.org/10.1063/1.1652651 (3 pages) | Cited 8 times

Online Publication Date: 17 October 2003

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Optically excited current oscillations in oxygen‐compensated and chromium‐compensated GaAs devices are described. Their relation to deep acceptor levels inferred from photoconductivity excitatation spectra is pointed out.
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ERRATUM: ``Mechanisms of Energy Transport between Rare Earth Ions''

R. J. Birgeneau

Appl. Phys. Lett. 14, 41 (1969); http://dx.doi.org/10.1063/1.1652652 (1 page) | Cited 1 time

Online Publication Date: 17 October 2003

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