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15 May 1969

Volume 14, Issue 10, pp. 299-332


ELECTRON BEAM CHANNELING IN SINGLE‐CRYSTAL SILICON BY SCANNING ELECTRON MICROSCOPY

E. D. Wolf and T. E. Everhart

Appl. Phys. Lett. 14, 299 (1969); http://dx.doi.org/10.1063/1.1652657 (2 pages) | Cited 12 times

Online Publication Date: 17 October 2003

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An annular semiconductor diode detector was used in a Cambridge Stereoscan electron microscope to resolve beam‐orientation‐dependent backscattered electron images not only as bands but also as extremely complicated defect and excess line patterns with angular resolution ≤ 5 × 10−4 rad. The resultant patterns are similar in appearance to transmission and reflection Kikuchi electron diffraction patterns.

TEMPERATURE AND FREQUENCY DEPENDENCE OF MICROWAVE ELASTIC LOSSES IN β‐RHOMBOHEDRAL BORON FOR LONGITUDINAL WAVES ALONG THE c AXIS

J. D. Young, D. W. Oliver, and G. A. Slack

Appl. Phys. Lett. 14, 301 (1969); http://dx.doi.org/10.1063/1.1652658 (2 pages) | Cited 4 times

Online Publication Date: 17 October 2003

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The frequency dependence of microwave elastic losses for longitudinal waves along the c axis of a β‐rhombohedral boron crystal have been measured from 0.5 to 1.8 GHz at 4 and 300°K. At 1 and 1.5 GHz, the temperature dependence of these losses has been determined from 4 to 300°K. At 300°K, the attenuation due to interaction with thermal phonons is found to vary quadratically with frequency, in accord with theory, and to have a value of 0.1 dB∕cm at 1 GHz. The sound velocity of the longitudinal wave along the c axis is found to be 1.4 × 106 cm∕sec.

THE INFLUENCE OF WEAK rf FIELDS ON SCINTILLATION RISE TIMES

A. M. Short and J. B. Dance

Appl. Phys. Lett. 14, 303 (1969); http://dx.doi.org/10.1063/1.1652659 (2 pages)

Online Publication Date: 17 October 2003

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Various organic scintillators have been placed in rf fields. The light emitted during the first few nanoseconds of the fluorescence may be greatly reduced if the frequency of the rf is about 340 MHz. rf stimulation shapes fluorescence pulses and this may be used to eliminate noise and enhance neutron‐γ separation in a scintillation detector.

DETERMINATION OF INTERNAL ELECTRIC FIELDS IN SILICON DIOXIDE LAYERS BY OPTICAL PROBING

H. A. Protschka and F. Frankovsky

Appl. Phys. Lett. 14, 304 (1969); http://dx.doi.org/10.1063/1.1652660 (2 pages)

Online Publication Date: 17 October 2003

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Existing nominal electric fields in unirradiated and electron‐bombarded silicon dioxide layers of SOS‐sandwich structures were determined by means of optical probing. The method of investigation is based on the quadratic electro‐optical Kerr effect and employs a suitable optical arrangement in connection with a 0.6328‐μ helium‐neon laser.

OPTICAL SECOND‐ AND THIRD‐HARMONIC GENERATION IN CHOLESTERYL NONANOATE LIQUID CRYSTAL

Lawrence S. Goldberg and Joel M. Scnnur

Appl. Phys. Lett. 14, 306 (1969); http://dx.doi.org/10.1063/1.1652661 (3 pages) | Cited 10 times

Online Publication Date: 17 October 2003

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Laser‐induced generation of second‐ and third‐harmonic radiation is studied in cholesteryl nonanoate and in other cholesteric and nematic liquid crystals. No second harmonic is observed in any of the liquid‐crystal mesomorphic phases, indicating their ordered molecular arrangements to be centrosymmetric. Large changes in third‐harmonic intensity occur at several phase transitions, and their possible origins are considered.

A NEW NEGATIVE MAGNETO‐RESISTANCE EFFECT IN GERMANIUM

V. L. Newhouse, E. S. Furgason, and T. D. Ellis

Appl. Phys. Lett. 14, 308 (1969); http://dx.doi.org/10.1063/1.1652662 (3 pages)

Online Publication Date: 17 October 2003

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A decrease in resistivity with increasing magnetic field has been found in high‐purity n‐type germanium subjected to crossed E and B fields at 4.2°K. The effect is due to an increase in carrier density with increasing B caused by impact ionization of previously un‐ionized donors, and is associated with the presence of the Hall electric field. It is accompanied by bulk oscillations in the megacycle range.

CONDUCTIVITY AND HALL MOBILITY OF ION‐IMPLANTED SILICON IN SEMI‐INSULATING GALLIUM ARSENIDE

James D. Sansbury and James F. Gibbons

Appl. Phys. Lett. 14, 311 (1969); http://dx.doi.org/10.1063/1.1652663 (3 pages) | Cited 11 times

Online Publication Date: 17 October 2003

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Chromium‐doped semi‐insulating gallium arsenide has been successfully doped n‐type by ion implantation of silicon. Annealing studies are presented which show that at annealing temperatures in excess of 600°C, conductivity and Hall mobility rise to values comparable to those expected for heavily doped gallium arsenide.

ANNEALING CHARACTERISTICS OF n‐TYPE DOPANTS IN ION‐IMPLANTED SILICON

B. L. Crowder and F. F. Morehead

Appl. Phys. Lett. 14, 313 (1969); http://dx.doi.org/10.1063/1.1652664 (3 pages) | Cited 42 times

Online Publication Date: 17 October 2003

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Investigations of the conditions under which the donors, P, As, and Sb, are incorporated into Si by by ion implantation (260–300 keV) in an electrically active form are reported. Above a critical dose, room‐temperature implantations followed by a 600°C post anneal are substantially more effective than implantations at 600°C.

INTERNAL FLUX MOTION IN LARGE JOSEPHSON JUNCTIONS

A. C. Scott and W. J. Johnson

Appl. Phys. Lett. 14, 316 (1969); http://dx.doi.org/10.1063/1.1652665 (3 pages) | Cited 40 times

Online Publication Date: 17 October 2003

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A ``displaced linear branch'' has been observed in the volt‐ampere characteristics of square (1 × 1‐mm) Sn☒Ox☒Sn and Pb☒Ox☒Pb Josephson junctions. The slope of the linear branch is independent of magnetic field and independent of temperature below 2.2°K. It is suggested that this effect can be attributed to internal flux motion.

MULTIPHOTON EXCITATION OF FLUORESCENCE IN STANDING LIGHT WAVES AND MEASUREMENT OF PICOSECOND PULSES

K. H. Drexhage

Appl. Phys. Lett. 14, 318 (1969); http://dx.doi.org/10.1063/1.1652666 (3 pages) | Cited 12 times

Online Publication Date: 17 October 2003

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The spatial variation of the fluorescence intensity after multiphoton absorption in dye solutions is explained in terms of standing light waves. The mirror reflectivity affects the contrast ratios. Furthermore, the influence of the mirror on the process of fluorescence emission is considered.

AVALANCHE SHOCK FRONTS IN p‐n JUNCTIONS

D. J. Bartelink and D. L. Scharfetter

Appl. Phys. Lett. 14, 320 (1969); http://dx.doi.org/10.1063/1.1652667 (4 pages) | Cited 4 times

Online Publication Date: 17 October 2003

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A new transient mode of avalanche breakdown in p‐n junctions is described. For sufficiently high current, a region of impact ionization of carriers advances as a shock front whose velocity can be several times faster than the carrier‐saturated drift velocity. Since the passing disturbance rapidly fills the depletion region with a dense plasma of holes and electrons, it has been used to interpret the observed high‐efficiency microwave oscillations of the trapped‐plasma ``TRAPATT'' mode. An approximate analysis is given, and compared with numerical calculations.

RAMAN‐NATH DIFFRACTION IN ORGANIC CRYSTALS

D. C. Wolkerstorjer

Appl. Phys. Lett. 14, 323 (1969); http://dx.doi.org/10.1063/1.1652668 (3 pages)

Online Publication Date: 17 October 2003

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The diffraction of light by ultrasound has been measured at 53 MHz in anthracene, naphthalene, and sugar. Anthracene is found to be more efficient than water in this respect while naphthalene and sugar are more efficient than lithium niobate. Acoustic attenuation has also been measured in anthracene over a frequency range of 10 to 150 MHz.

PARAMETRIC EXCITATION AND QUENCHING OF LONGITUDINAL PLASMA WAVES

Akira Hasegawa, R. Davidson, and R. Goldman

Appl. Phys. Lett. 14, 325 (1969); http://dx.doi.org/10.1063/1.1652669 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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General conditions of parametric excitation and parametric quenching of the longitudinal plasma waves involving negative energy wave(s) are derived by expressing the growth rate of these waves in terms of quantities involving only the linear plasma conductivities and the amplitude of density modulation by the pump.

DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION

H. J. Stein, F. L. Vook, and J. A. Borders

Appl. Phys. Lett. 14, 328 (1969); http://dx.doi.org/10.1063/1.1652670 (3 pages) | Cited 86 times

Online Publication Date: 17 October 2003

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The production of divacancies in Si by 400‐keV oxygen ion implantation (ΦI = 1.75 × 1014 cm−2, two sides) was detected by the characteristic divacancy optical absorption band at 1.8 μ. This band has been previously correlated with the presence of divacancies in electron‐ and neutron‐irradiated silicon. Ion‐produced divacancy annealing near 200°C was observed to correlate with neutron‐produced divacancy annealing. Detailed comparisons of the annealing of electron‐, neutron‐, and ion‐produced divacancies suggest that the ion‐produced divacancies anneal primarily in regions with sink concentrations ≥ 1019 cm−3.

TWO‐STREAM INSTABILITIES IN A SEMICONDUCTOR IN THE PRESENCE OF A MAGNETIC FIELD

P. Guéret

Appl. Phys. Lett. 14, 330 (1969); http://dx.doi.org/10.1063/1.1652672 (2 pages) | Cited 1 time

Online Publication Date: 17 October 2003

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Carrier wave instabilities in semiconductors having only one type of carriers (electrons) are described. These instabilities are shown to result from a nonuniformity in the electron drift velocity, and to occur only in the presence of a magnetic field. It is also shown that the mechanism that is responsible for the instability is the same whether the magnetic field be transverse or parallel to the direction of electron drift.
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ERRATA: Detection of Photon‐Photon Scattering in KD2PO4O

D. C. Auth, W. G. Mayer, and W. J. Thaler

Appl. Phys. Lett. 14, 332 (1969); http://dx.doi.org/10.1063/1.1652673 (1 page)

Online Publication Date: 17 October 2003

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ERRATA: Mechanism of Ionic Conduction at High Fields

C. J. Dell'Oca and L. Young

Appl. Phys. Lett. 14, 332 (1969); http://dx.doi.org/10.1063/1.1652674 (1 page) | Cited 1 time

Online Publication Date: 17 October 2003

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