APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

SECTION LISTING

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

15 Mar 1969

Volume 14, Issue 6, pp. 179-204


LOW TEMPERATURE ELECTROLUMINESCENCE

James E. Dueker, Richard H. Glaenzer, and George A. Saum

Appl. Phys. Lett. 14, 179 (1969); http://dx.doi.org/10.1063/1.1652764 (3 pages)

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Electroluminescent phosphors are used as the display portion of infrared image converters, operated at liquid‐nitrogen temperature. These phosphors lose considerable brightness upon cooling, giving a dim display. This report demonstrates the sources of this brightness loss during cooling as (1) due to spectral shift to wavelengths less visible to the eye and (2) changes in dielectric constant of the binder during cooling, causing a decrease in effective electric field applied to the phosphor particles. Some improvement in brightness can be demonstrated by using very thin phosphor layers, thereby increasing the effective applied field.

SIMPLE ANALYTIC EXPRESSIONS FOR AM AND FM MODE‐LOCKED PULSES IN HOMOGENEOUS LASERS

A. E. Siegman and D. J. Kuizenga

Appl. Phys. Lett. 14, 181 (1969); http://dx.doi.org/10.1063/1.1652765 (2 pages) | Cited 20 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Simple expressions for the mode‐locked pulses induced by either intracavity phase or amplitude (FM or AM) modulation in a homogeneous laser are developed by following a Gaussian pulse through one pass around the laser cavity. The predicted pulsewidth in either case is τp ∼ (g0∕δ)1∕4 × (ΔfaxialΔfatomic)−1∕2, where g0 = saturated single‐pass excess laser gain, δ = single‐pass modulation index, Δfaxial = axial mode spacing, and Δfatomic = atomic linewidth. The FM case also shows a frequency `chirp' equal to the pulsewidth. Experiments with the FM case in a Nd:YAG laser show excellent agreement with the analysis.

RADIATIVE LIFETIMES IN n‐TYPE GALLIUM ARSENIDE

R. Dingle and K. F. Rodgers

Appl. Phys. Lett. 14, 183 (1969); http://dx.doi.org/10.1063/1.1652766 (2 pages) | Cited 6 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Radiative lifetimes and time‐resolved spectra have been obtained for high‐purity n‐type gallium arsenide at low temperatures. The ∼ 1.51‐eV bands, generally associated with the annihilation of free and bound excitons, decay very rapidly, τ < 15 nsec. The 1.49‐eV band, variously described as donor‐acceptor recombination or as a free‐to‐bound recombination, has a longer nonexponential decay. For this band, the time‐resolved spectra show a steady shift to lower energy as the delay after the pulse is lengthened. The conclusion drawn is, that the 1.49‐eV band arises from a D‐A recombination process.

PHONON FREQUENCY SPECTRA OF TRAVELING ACOUSTOELECTRIC DOMAINS IN CdS

B. W. Hakki and R. W. Dixon

Appl. Phys. Lett. 14, 185 (1969); http://dx.doi.org/10.1063/1.1652767 (4 pages) | Cited 25 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Optical beam probing using Bragg diffraction from traveling acoustic domains in CdS has revealed a direct correlation between the frequency of maximum phonon intensity and the total integrated acoustic intensity. At the point of initiation of the acoustic domain the frequency of maximum phonon intensity was equal to that for maximum small signal gain, but as the domain propagated towards the anode the total acoustic intensity ΦT increased and the frequency fm of maximum phonon intensity decreased according to the relation ΦT ∞ fm−4. After a sufficient distance of travel the acoustic intensity saturated and the peak phonon frequency became invariant. It is suggested that the drop in phonon frequency and its correlation with total phonon intensity are related to the trapping of free carriers by acoustic phonons.

CONTINUOUS OPERATION OF A YAIG: Nd LASER BY INJECTION LUMINESCENT PUMPING

R. B. Allen and S. J. Scalise

Appl. Phys. Lett. 14, 188 (1969); http://dx.doi.org/10.1063/1.1652768 (3 pages) | Cited 11 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Continuous operation of a YA1G:Nd laser has been achieved using incoherent injection luminescent pumping. GaAsxP1−x light‐emitting diodes are used at liquid‐nitrogen temperatures to provide effective optical pumping of YA1G:Nd over a narrow wavelength range. Initial experiments give a continuous laser output of 40 mW at 1.0641 μm with 8‐W total electrical input power to the diodes.

LASER TRANSITION TO BAND EDGE OR TO IMPURITY STATES IN GaAs:Ge

R. D. Burnham, P. D. Dapkus, N. Holonyak, and J. A. Rossi

Appl. Phys. Lett. 14, 190 (1969); http://dx.doi.org/10.1063/1.1652769 (3 pages) | Cited 7 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Data are presented showing that p‐type GaAs:Ge can be lased on band‐to‐band, conduction band‐to‐acceptor impurity, or simultaneously on both transitions. Recombination transitions to the Ge acceptor impurity are well separated in energy from those to the neighboring band edge, and in spectral width (spontaneous recombination) are in reasonable agreement with previous theory.

NEGATIVE RESISTANCE IN GaP ELECTROLUMINESCENT DIODES

R. N. Bhargava

Appl. Phys. Lett. 14, 193 (1969); http://dx.doi.org/10.1063/1.1652770 (3 pages) | Cited 11 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Negative resistance in red and green GaP electroluminescent diodes is observed. In both kinds of diodes deep‐donor oxygen is shown likely to be responsible for the negative resistance.

INFLUENCE OF n‐TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p‐TYPE DOPANTS IN Si AND Ge

L. Eriksson, G. Fladda, and K. Björkqvist

Appl. Phys. Lett. 14, 195 (1969); http://dx.doi.org/10.1063/1.1652771 (3 pages) | Cited 12 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
The orientation dependence of the backscattering yield of 1.8‐MeV carbon ions has been used to determine the lattice location of group III and V elements implanted into Si and Ge at 30 keV and ∼350°C. It is shown that the lattice location of p‐type dopants is affected by the presence of n‐type dopants in the substrate. For example, when T1 is implanted alone into Si a large interstitial component is observed. For a ``mixed'' T1 and As implantation, however, the substitutional T1 component is enhanced at the expense of the interstitial component.

GaAs SCHOTTKY BARRIER AVALANCHE PHOTODIODES

W. T. Lindley, R. J. Phelan, C. M. Wolfe, and A. G. Foyt

Appl. Phys. Lett. 14, 197 (1969); http://dx.doi.org/10.1063/1.1652772 (3 pages) | Cited 13 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Uniform avalanche Schottky barrier photodiodes have been fabricated by plating a thin layer of platinum on GaAs and forming a guard ring by proton radiation. Operating at a gain of 100 these photodiodes exhibit gain‐bandwidth products greater than 50 GHz and enhanced signal to noise ratio in excess of 30 dB. The observed variation on the spectral response with bias can be accounted for by a change in the absorption of the Schottky barrier diode.

MAGNETIZATION OF SINGLE‐CORE, MULTI‐STRAND, AND TWISTED MULTI‐STRAND SUPERCONDUCTING COMPOSITE WIRES

Y. Iwasa

Appl. Phys. Lett. 14, 200 (1969); http://dx.doi.org/10.1063/1.1652773 (2 pages) | Cited 4 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
Magnetization measurements performed on three types of Nb☒Ti superconducting composite wire have shown that twisted multistrand wire not only is very stable but also has the smallest magetization and thus is the most suitable for ac applications.

FIELD‐THEORETICAL TREATMENT OF PHOTOMIXING

M. C. Teich

Appl. Phys. Lett. 14, 201 (1969); http://dx.doi.org/10.1063/1.1652774 (3 pages) | Cited 14 times

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Show Abstract
A quantum theory of photomixing is developed in which double‐ and sum‐frequency signal components do not appear, when hν ≫ kT, in distinction to the classical theory. Optimum sinusoidal photomixing occurs for a first‐order coherent total incident field with stationary constituent beams. The heterodyne process may be viewed as the annihilation of a single nonmonochromatic photon. An interpretation is given to temporal interference experiments at the single‐photon level recently performed by Radloff.
back to top
RSS Feeds
FREE

ERRATA: Excess Current Generation due to Reverse Bias P‐N Junction Stress

D. R. Collins

Appl. Phys. Lett. 14, 204 (1969); http://dx.doi.org/10.1063/1.1652775 (1 page)

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Abstract Unavailable
FREE

ERRATA: Flux‐Dependent Aspects of the Evolution of Acoustoelectric domains in n‐GaAs

David L. Spears and Ralph Bray

Appl. Phys. Lett. 14, 204 (1969); http://dx.doi.org/10.1063/1.1652776 (1 page)

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Abstract Unavailable
FREE

ERRATA: Microwave Echoes in Gaseous NH3

J. L. Jenkins and P. E. Wagner

Appl. Phys. Lett. 14, 204 (1969); http://dx.doi.org/10.1063/1.1652777 (1 page)

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Abstract Unavailable
FREE

ERRATA: Measurement of Sound Velocities in Crystals Using Bragg Diffraction of Light and Applications to Lanthanum Fluoride

Charles Krischer

Appl. Phys. Lett. 14, 204 (1969); http://dx.doi.org/10.1063/1.1652778 (1 page)

Online Publication Date: 17 October 2003

Full Text: | Download PDF

Abstract Unavailable
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close