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1 Apr 1969

Volume 14, Issue 7, pp. 205-234


EXPERIMENTAL CONFIRMATION OF SELF‐TRAPPING FROM THE DEPENDENCE OF SELF‐MODULATION ON PROPAGATION DISTANCE

M. M. Denariez‐Roberge and J‐P. E. Taran

Appl. Phys. Lett. 14, 205 (1969); http://dx.doi.org/10.1063/1.1652779 (3 pages) | Cited 23 times

Online Publication Date: 17 October 2003

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The self‐trapping interpretation of apparent small‐scale filaments has recently been questioned. Experiments were therefore undertaken to test whether the observed filamentary structure is caused by self‐trapping. We found that the filaments propagated over distances of the order of a few centimeters. To confirm this result, the spectral broadening in filaments versus propagation distance was determined. These observations give a nonlinear index change which agrees with the index change calculated from the observed diameter.

DISTORTION OF A CHOLESTERIC STRUCTURE BY A MAGNETIC FIELD

Robert B. Meyer

Appl. Phys. Lett. 14, 208 (1969); http://dx.doi.org/10.1063/1.1652780 (2 pages) | Cited 85 times

Online Publication Date: 17 October 2003

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An experiment is described which confirms the theory of the distortion of a cholesteric structure by a magnetic field. Field effects in a sample of p‐azoxyanisole doped with cholesteryl acetate were viewed directly with a microscope, and the pitch of the helical structure was measured as a function of field strength.

THE NITROGEN ISOELECTRONIC TRAP IN PHOSPHORUS‐RICH GALLIUM ARSENIDE PHOSPHIDE

P. J. Dean and R. A. Faulkner

Appl. Phys. Lett. 14, 210 (1969); http://dx.doi.org/10.1063/1.1652781 (3 pages) | Cited 26 times

Online Publication Date: 17 October 2003

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The localization energy of excitons at N isoelectronic substituents in GaAsxP1−x has been determined from optical absorption spectra for x ≲ 0.2. The results indicate that the binding energy of the N‐induced electron state associated with the X1 conduction band minima in GaAs may be relatively large, ∼0.08 eV. However, this state is still more than 0.3 eV above the lowest minimum at Γ1c. It is likely that there is no bound state associated directly with the Γ1 conduction band minimum.

CURRENT OSCILLATIONS BY TWO BULK NEGATIVE‐RESISTANCE EFFECTS IN PHOTOEXCITED GaAs

Yozo Tokumaru

Appl. Phys. Lett. 14, 212 (1969); http://dx.doi.org/10.1063/1.1652782 (2 pages) | Cited 10 times

Online Publication Date: 17 October 2003

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High‐frequency (MHz) and low‐frequency (kHz) current oscillations are found in photoexcited long GaAs diodes; the threshold field for the former is about 4.0 × 103 V∕cm, and for the latter is about 1.5 × 103 V∕cm. At an average applied field >4 × 103 V∕cm, high‐frequency oscillation occurs first and continues for a while, then low‐frequency oscillation takes place. Experimental results suggest that the origin of high‐ and low‐frequency oscillation are different from each other; the former is the two‐valley transfer effect, and the latter the field‐dependent trapping effect.

ELECTRON EMISSION FROM A ``COLD‐CATHODE'' GaAs p‐n JUNCTION

B. F. Williams and R. E. Simon

Appl. Phys. Lett. 14, 214 (1969); http://dx.doi.org/10.1063/1.1652783 (3 pages) | Cited 14 times

Online Publication Date: 17 October 2003

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Electron emission into vacuum has been observed from a forward‐biased Cs‐ and O‐treated GaAs p‐n junction. The device was operated at room temperature with dc bias voltage. The effective efficiency of the device (emission current divided by internal diode current eligible for emission) was 0.05%, while the over‐all efficiency of the device (emission current divided by total diode current) was 10−6. The low over‐all efficiency is explained in terms of sample geometry and surface activation.

NEGATIVE CAPACITANCE IN AMORPHOUS SEMICONDUCTOR CHALCOGENIDE THIN FILMS

R. Vogel and P. J. Walsh

Appl. Phys. Lett. 14, 216 (1969); http://dx.doi.org/10.1063/1.1652784 (3 pages) | Cited 18 times

Online Publication Date: 17 October 2003

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Certain amorphous materials exhibit rapid electrical switching. The variation in their capacitance was evaluated as a function of temperature and electric field in the high‐resistance state. The zero‐field capacitance follows a Curie‐Weiss law above room temperature. At low temperatures, and at fields near the threshold of switching for higher temperatures, the open‐circuit incremental ac capacitance becomes negative.

SPATIAL DISTRIBUTION OF 0.30 – 0.54 eV GASEOUS ARGON ATOMS SCATTERED FROM A SOLID ARGON SURFACE

R. F. Brown, R. L. Caldwell, and M. R. Busby

Appl. Phys. Lett. 14, 219 (1969); http://dx.doi.org/10.1063/1.1652786 (2 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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A high‐temperature aerodynamic molecular‐beam apparatus has been used to investigate the spatial distributions of argon atoms scattered from solid argon at 15°K for incident energies of 0.30 to 0.54 eV and incident angles of 0 to 70 deg. A highly nondiffuse flux of scattered atoms was observed for the noncondensing atoms.

PASSIVE Q‐SWITCHING OF A CO2 LASER USING A MIXTURE OF SF6 AND C2F3Cl GASES

William F. Krupke

Appl. Phys. Lett. 14, 221 (1969); http://dx.doi.org/10.1063/1.1652787 (2 pages) | Cited 9 times

Online Publication Date: 17 October 2003

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Passive Q‐switching of a CO2 laser operating at 10.6 μ has been achieved with a mixture of sulfur hexafluoride and chlorotrifluoroethylene gases contained in a gas cell placed within the resonator. Use of chlorotrifluoroethylene gas to suppress spurious oscillations eliminates the need to use dispersive optical elements in the resonator.

ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION

Stephen Kurtin, Gordon A. Shifrin, and T. C. McGill

Appl. Phys. Lett. 14, 223 (1969); http://dx.doi.org/10.1063/1.1652788 (3 pages) | Cited 31 times

Online Publication Date: 17 October 2003

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Optical reflection spectra of crystalline, sputtered, and ion implanted silicon specimens are presented. Characteristic aspects of the spectra of ion implanted specimens are related to lattice damage.

CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 ‐ keV ANTIMONY ION BOMBARDMENT OF SILICON

R. R. Hart and O. J. Marsh

Appl. Phys. Lett. 14, 225 (1969); http://dx.doi.org/10.1063/1.1652789 (2 pages) | Cited 14 times

Online Publication Date: 17 October 2003

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We have measured the fractional change in the optical reflectivity of silicon in the 1.8–2.2 eV photon energy band as a function of 40‐keV antimony ion dose (1011–1015 Sb∕cm2 at various implant temperatures (− 160–405°C). Approximate agreement is found between the change of reflectivity and previous measurements of lattice disorder as determined by backscattering of 1‐MeV He ions.

POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICON

D. Eirug Davies

Appl. Phys. Lett. 14, 227 (1969); http://dx.doi.org/10.1063/1.1652790 (3 pages) | Cited 27 times

Online Publication Date: 17 October 2003

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Isochronal annealing studies have been conducted on implanted boron and phosphorus layers in silicon. It is shown that the sheet conductance rise on annealing is dependent on the temperature at which the silicon is maintained during implantation. From the standpoint of conductance, low‐temperature implanting is to be favored.

MICROWAVE DIELECTRIC CONSTANT OF Al2O3 AT 375 KILOBARS

R. S. Hawke, R. N. Keeler, and A. C. Mitchell

Appl. Phys. Lett. 14, 229 (1969); http://dx.doi.org/10.1063/1.1652791 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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Microwave techniques were used to measure the conductivity and dielectric constant of shock‐compressed Al2O3. At a pressure of 375 kbar, the dielectric constant increased and the conductivity remained negligible. From the dielectric constant, the molar polarizability was calculated and found to decrease.

CALCULATIONS OF TWO‐PHOTON CONDUCTIVITY IN SEMICONDUCTORS

Jick H. Yee

Appl. Phys. Lett. 14, 231 (1969); http://dx.doi.org/10.1063/1.1652792 (3 pages) | Cited 8 times

Online Publication Date: 17 October 2003

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The photoconductivity produced in some direct‐band‐gap semiconductors by the two‐photon absorption process is investigated theoretically and found to be a very complicated function of the crystal parameters, the excitation photon energy, and the light excitation intensity. An application of the theory to a GaAs crystal is carried out.
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ERRATA: The Field Ion Microscopy of Gold

D. G. Ast and D. N. Seidman

Appl. Phys. Lett. 14, 234 (1969); http://dx.doi.org/10.1063/1.1652793 (1 page)

Online Publication Date: 17 October 2003

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ERRATA: Epitaxy of Copper on Sapphire

Gerald Katz

Appl. Phys. Lett. 14, 234 (1969); http://dx.doi.org/10.1063/1.1652794 (1 page) | Cited 1 time

Online Publication Date: 17 October 2003

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