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1 May 1969

Volume 14, Issue 9, pp. 255-297


TEMPERATURE DEPENDENCE OF RHS IN ALUMINUM‐IMPLANTED LAYER IN n‐TYPE SINGLE CRYSTAL SILICON

Tadatsugu Itoh, Taroh Inada, Masao Ishiki, and Kenshi Menabe

Appl. Phys. Lett. 14, 255 (1969); http://dx.doi.org/10.1063/1.1652803 (4 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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The effect of subsequent annealing treatment on electrical properties of aluminum‐implanted silicon was studied by means of Hall‐effect and sheet‐resistivity measurements. Implanted silicon samples were annealed under various schedules, for example, isochronal annealing for 20 min, isothermal annealing at 800°C, etc. A sign conversion of ``sheet Hall coefficient (RHS)'' in the implanted layer of ``over annealed'' sample was observed below room temperature. However, hot probe measurements on the same sample showed the existence of p‐type layer, and the photo voltaic effect was also observed indicating that p‐n junction existed.
We have tentatively attempted to explain that these anomalous electrical properties were due to precipitation of implanted aluminum atoms along crystal imperfections.

A TUNABLE STIMULATED RAMAN OSCILLATOR

J. Gelbwachs, R. H. Pantell, H. E. Puthoff, and J. M. Yarborough

Appl. Phys. Lett. 14, 258 (1969); http://dx.doi.org/10.1063/1.1652804 (5 pages) | Cited 23 times

Online Publication Date: 17 October 2003

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We report the first observation of tunable stimulated Raman emission. A Q‐switched ruby laser was used to excite the A1 symmetry 248‐cm−1 polariton mode in a LiNbO3 crystal. The crystal, at room temperature, was placed in a resonator external to the laser cavity which was tuned to the Stokes frequency. It was possible to vary the Stokes frequency by altering the angle between the pump beam and the axis of the resonator. Stimulated Raman scattering from other polariton modes (152 cm−1, 628 cm−1) which are potentially tunable was observed. We also report the first observation of stimulated anti‐Stokes emission from a polariton mode.

SPONTANEOUS SELF‐PULSING AND CAVITY DUMPING IN A CO2 LASER WITH ELECTRO‐OPTIC Q‐SWITCHING

T. J. Bridges and P. K. Cheo

Appl. Phys. Lett. 14, 262 (1969); http://dx.doi.org/10.1063/1.1652805 (3 pages) | Cited 27 times

Online Publication Date: 17 October 2003

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Spontaneous self‐pulsing has been observed in a 10.6‐μ CO2 laser, Q‐switched in ≈10 nsec by an internal GaAs electro‐optic cell, with no saturable absorber present. Each Q‐switched event consists of a train of ten or more 20‐nsec pulses with a total duration of ≈400 nsec in a single P(20) line. Electro‐optic dumping of the cavity energy near the peak of oscillation gives a single output pulse of ≈10‐kW peak power and 25‐nsec duration. A numerical comparison is made with the circulating π pulse theory of spontaneous pulsing.

SILICON (111) 7×7 STRUCTURE

J. W. T. Ridgway and D. Haneman

Appl. Phys. Lett. 14, 265 (1969); http://dx.doi.org/10.1063/1.1652806 (3 pages) | Cited 18 times

Online Publication Date: 17 October 2003

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The Si(111) 7 × 7 structure has been observed within 9 sec of cleaving Si crystals at 850°C. Analysis shows that sufficient Fe to be regarded as essential for the structure cannot diffuse from the bulk in the time, although Li or Cu could. Sufficient contamination to form 1% of a monolayer could form by surface diffusion from the crystal sides, provided surface diffusion coefficients considerably greater than 5 × 10−5 cm2 sec−1 at 750°C were applicable.

OBSERVATION OF THE IDEAL GENERATION‐RECOMBINATION NOISE SPECTRUM AND SPECTRA WITH VOLTAGE VARIABLE RELAXATION TIME IN GOLD‐DOPED SILICON

C. T. Sah and L. D. Yau

Appl. Phys. Lett. 14, 267 (1969); http://dx.doi.org/10.1063/1.1652807 (3 pages) | Cited 1 time

Online Publication Date: 17 October 2003

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Observation of the ideal single time constant generation‐recombination noise spectrum is achieved over four decades of frequency and five decades of noise power for the first time by completely depleting the electrons and holes in the semiconductor substrate with a high electric field. The measured time constant provides another accurate datum of the thermal emission rate of electrons and holes. By decreasing the applied electric field, nonideal power spectra result whose characteristic frequency increases due to the presence of electrons and holes in the silicon substrate.

HIGH‐POWER AND HIGH‐EFFICIENCY GaAs AVALANCHE DIODES

C. Kim and L. D. Armstrong

Appl. Phys. Lett. 14, 270 (1969); http://dx.doi.org/10.1063/1.1652808 (2 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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New high cw power and high‐efficiency operations of GaAs avalanche diodes operating in the normal mode are reported. An output power of 500 mW (cw) at 11.1 GHz with an efficiency over 11.5% was obtained from a zinc‐diffused GaAs diode. The diode was mounted junction side adjacent to the heat sink in a coaxial pin‐type microwave package (Micro State Type 8).

EMISSION OF HIGH‐ENERGY ELECTRONS DURING ALLOY‐EVAPORATION PROCESSES ON HOT METAL FILAMENTS

Stuart A. Hoenig and Richard A. Pope

Appl. Phys. Lett. 14, 271 (1969); http://dx.doi.org/10.1063/1.1652809 (2 pages) | Cited 4 times

Online Publication Date: 17 October 2003

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Hot metal filaments are often used to evaporate another metal for deposition of thin films. If the metal being evaporated can alloy with the filament, a significant number of high‐energy electrons are emitted during the alloying‐evaporation process.

InGaAs☒CsO, A LOW WORK FUNCTION (LESS THAN 1.0 eV) PHOTOEMITTER

Brown F. Williams

Appl. Phys. Lett. 14, 273 (1969); http://dx.doi.org/10.1063/1.1652810 (3 pages) | Cited 16 times

Online Publication Date: 17 October 2003

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The photoemission and thermionic emission from heat‐treated In0.3Ga0.7As coated with very thin layers of Cs and O have been measured. The photothreshold occurred at about the band gap of 0.95 eV and the thermionic work function was determined to be 0.7 ± 0.1 eV.

EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACES

Y‐Z. Liu, J. L. Moll, and W. E. Spicer

Appl. Phys. Lett. 14, 275 (1969); http://dx.doi.org/10.1063/1.1652812 (3 pages) | Cited 13 times

Online Publication Date: 17 October 2003

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Heat cleaning in ultrahigh vacuum, when carried out properly on practical GaAs surfaces, has achieved very high quantum efficiency (∼600 μA∕lumen) after activation with Cs and O2. This is better than 50% of the best UHV cleaved GaAs. The inherent limitations of heat cleaning are the possibilities of dopant out diffusion and loss of As. Our experiments are consistent with out diffusion of Zn at about 650°C, and a sufficiently small loss of As at this heating temperature so as to result in negligible As vacancies near the surface of the crystal

INTERACTION OF GUNN DOMAINS WITH Ga71 NUCLEI IN GaAs

Robert J. Mahler

Appl. Phys. Lett. 14, 277 (1969); http://dx.doi.org/10.1063/1.1652813 (3 pages)

Online Publication Date: 17 October 2003

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The application of an electric field of more than 3.2 kV∕cm across n‐type GaAs results in the formation of high‐voltage approximately triangular domains which travel across the sample with a frequency determined by the length of the sample. A Ga71 nuclear spin transition frequency was brought within the domain frequency bandwidth and an interaction between the domains and the nuclei was observed.

FILAMENTARY CONDUCTION IN SEMICONDUCTING GLASS DIODES

A. David Pearson and C. E. Miller

Appl. Phys. Lett. 14, 280 (1969); http://dx.doi.org/10.1063/1.1652814 (3 pages) | Cited 33 times

Online Publication Date: 17 October 2003

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Electrical switching in thin‐film As2SeTe2 semiconducting glass diodes with thin‐film electrodes has been studied. The formation of a liquid phase and what appear to be conducting filaments have been observed and recorded. Current densities > 104 A cm−2 have been estimated in the filaments.

GENERATION OF A MONOMODE GIANT PULSE LASER BY COHERENT PUMPING

G. Briquet, J. M. Jego, and A. Terneaud

Appl. Phys. Lett. 14, 282 (1969); http://dx.doi.org/10.1063/1.1652815 (2 pages)

Online Publication Date: 17 October 2003

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A 1‐nsec giant pulse is generated from a neodymium‐doped glass by using a 5300 Å pulse as pumping source (15 nsec, 0.3 J). The active volume is only 3 × 10−3 cm3 and spectral linewidth of the emission is less than 0.5 Å.

DIFFUSION ANOMALIES IN THIN METALLIC FILMS

Bernard Selikson

Appl. Phys. Lett. 14, 283 (1969); http://dx.doi.org/10.1063/1.1652816 (3 pages) | Cited 2 times

Online Publication Date: 17 October 2003

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The absence of void formation at the interface of aluminum‐gold thin‐film diffusion couples after diffusion annealing is noted in studies reported here. This is in contrast to the void formation observed in bulk aluminum‐gold couples. The Kirkendall‐effect explanation is believed not applicable to these thin‐film samples where it is proposed that the rapid surface diffusion replenishes the formed vacancies, thus preventing vacancy condensation and void formation.

THE UPPER CRITICAL FIELD Hc2 OF NbN FILM PREPARED BY REACTIVE SPUTTERING

Yukinori Saito, Takeshi Anayama, Kazuhiko Yasohama, Ko Yasukouchi, and Yutaka Onodera

Appl. Phys. Lett. 14, 285 (1969); http://dx.doi.org/10.1063/1.1652817 (2 pages) | Cited 7 times

Online Publication Date: 17 October 2003

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The upper critical field Hc2 of about 200 kOe was obtained for niobium nitride films prepared by reactive sputtering. Electron microscopy was used to determine the crystal structure. It was shown that the electron diffraction patterns of these films were that of the NbN with the NaCl crystal structure.

PASSIVE MODE LOCKING OF A PULSED Nd:YAG LASER

A. R. Clobes and M. J. Brienza

Appl. Phys. Lett. 14, 287 (1969); http://dx.doi.org/10.1063/1.1652818 (2 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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We report the passive mode locking of a repetitively pulsed Nd:YAG laser in which complete mode‐locking is established by the 100% modulation of the output pulse train and a two‐photon fluorescence pulse width measurement yielding a contrast ratio of 3:1.

LOW‐WORK‐FUNCTION SURFACES FOR NEGATIVE‐ELECTRON‐AFFINITY PHOTOEMITTERS

H. Sonnenberg

Appl. Phys. Lett. 14, 289 (1969); http://dx.doi.org/10.1063/1.1652819 (3 pages) | Cited 21 times

Online Publication Date: 17 October 2003

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The photoemission threshold of GaAs☒Cs☒O is explained on the basis of a heterojunction model composed of GaAs and Cs2O. The concepts involved in this model are generalized to an arbitrary heterojunction, leading to the result that it is, in principle, possible to obtain surfaces with work function lower than 0.5 eV. If deposited on an appropriate substrate, these surfaces offer the exciting possibility of highly efficient photoemission well into the infrared. A possible practical negative‐electron‐affinity photoemitter with efficient response to 1.4 μ is suggested.

MODES OF PROPAGATING LIGHT WAVES IN THIN DEPOSITED SEMICONDUCTOR FILMS

P. K. Tien, R. Ulrich, and R. J. Martin

Appl. Phys. Lett. 14, 291 (1969); http://dx.doi.org/10.1063/1.1652820 (4 pages) | Cited 339 times

Online Publication Date: 17 October 2003

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We report theory and experiment on modes of propagating light waves in deposited semiconductor films. The modes are excited by a novel prism‐film coupler which is also used for the measurement of their phase velocities. Up to 50% of the incident laser energy has been fed into a single mode of propagation. The positions and linewidths of the modes, the wave intensity inside the film, and a dramatic view of the mode spectrum displayed by the scattered light are discussed in detail.

USE OF CHARACTERISTIC X RAYS TO MONITOR ANNEALING OF ION‐IMPLANTED DIAMOND

L. A. Davidson, James F. Gibbons, R. C. Der, T. M. Kavanagh, and J. M. Khan

Appl. Phys. Lett. 14, 295 (1969); http://dx.doi.org/10.1063/1.1652821 (3 pages) | Cited 6 times

Online Publication Date: 17 October 2003

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Bombardment of aligned type‐IIa diamond substrates with 80‐keV protons and simultaneous detection of the resulting characteristic carbon K x rays has revealed excellent channeling structure. This technique has been used to monitor the crystallinity of a surface implanted with P31+ ions. Crystallinity was destroyed by P31+ does of the order of 1014∕cm2. Vacuum annealing at 950°C restored the diamond cubic crystal structure.
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