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15 Dec 1969

Volume 15, Issue 12, pp. 389-433


PSEUDO‐KIKUCHI PATTERN DEGRADATION BY A THIN AMORPHOUS SILICON FILM

E. D. Wolf, M. Braunstein, and A. I. Braunstein

Appl. Phys. Lett. 15, 389 (1969); http://dx.doi.org/10.1063/1.1652871 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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Measurements are reported which show that a few tens of angstroms of an amorphous adlayer of silicon on a single‐crystal (111) silicon surface produces a measurable degradation in the pseudo‐Kikuchi backscattered electron pattern of this surface. Normalized pattern quality, as defined in this work, is shown to decrease rapidly with adlayer film thickness and to become effectively zero at 350 Å for a primary electron beam accelerating voltage of 21.3 kV. At 5 kV, the normalized pattern quality was effectively zero for all measurable film thicknesses (thickness measurement limit was ∼20 ± 20 Å).

BREAKDOWN CHARACTERISTICS OF AlxGa1−xAs AVALANCHE DIODES

C. Yeh and S. G. Liu

Appl. Phys. Lett. 15, 391 (1969); http://dx.doi.org/10.1063/1.1652872 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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The breakdown voltage and the maximum electric field of AlxGa1−xAs avalanche diodes are presented as a function of the aluminum content in the samples. Aluminum content is estimated from the actual weight ratio of Al and Ga and the band gap energy of the samples. The maximum electric fields are calculated from the measured data of the breakdown voltage, capacitance at breakdown, and diode dimensions. Experimental results indicate that in addition to its function of increasing the band gap energy, increased Al contents also reduce the impurity gradient of the diodes. As a result, the breakdown voltage is found to increase more rapidly than the maximum electric field, when the Al content is increased. Values of maximum electric field in the range from 6 to 8 × 105 V∕cm are observed. These values compare favorably with those of GaAs and GaP.

OPTICAL SECOND‐HARMONIC GENERATION IN CRYSTALS OF ORGANIC DYES

M. Bass, D. Bua, R. Mozzi, and R. R. Monchamp

Appl. Phys. Lett. 15, 393 (1969); http://dx.doi.org/10.1063/1.1652873 (4 pages) | Cited 20 times

Online Publication Date: 21 October 2003

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Optical second‐harmonic generation has been observed in crystals of six organic dyes. One dye, 7‐diethylamino‐4‐methylcoumarin, appears to be at least as good a frequency doubler as LiNbO3 and has a much higher resistance to surface damage.

OPTICAL THIRD HARMONIC GENERATION USING MODE‐LOCKED AND NONMODE‐LOCKED LASERS

Charles C. Wang and E. L. Baardsen

Appl. Phys. Lett. 15, 396 (1969); http://dx.doi.org/10.1063/1.1652874 (2 pages) | Cited 13 times

Online Publication Date: 21 October 2003

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Optical third harmonic generation in ADP crystals has been studied both in reflection and along the phase‐matched direction. Results with a mode‐locked laser indicate that only a small fraction (∼4%) of the total energy per laser shot was associated with the picosecond spikes in the laser output. This suggests that the peak power associated with the picosecond pulses may have been grossly overestimated in some cases.

EXTENSION OF LASER HARMONIC‐FREQUENCY MIXING TECHNIQUES INTO THE 9 μ REGION WITH AN INFRARED METAL‐METAL POINT‐CONTACT DIODE

V. Daneu, D. Sokoloff, A. Sanchez, and A. Javan

Appl. Phys. Lett. 15, 398 (1969); http://dx.doi.org/10.1063/1.1652875 (4 pages) | Cited 47 times

Online Publication Date: 21 October 2003

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An infrared point‐contact diode is used to mix the frequency of a 28.0 μ water laser with that of a 9.3 μ CO2 laser and a K‐band microwave radiation. The experiment provides, among several applications, the crucial link necessary to establish a frequency multiplier chain for absolute frequency measurements in the infrared.

A SUPERSONIC MIXING CHEMICAL LASER

J. R. Airey and S. F. McKay

Appl. Phys. Lett. 15, 401 (1969); http://dx.doi.org/10.1063/1.1652877 (3 pages) | Cited 18 times

Online Publication Date: 21 October 2003

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The reaction F + HCl → HF† + Cl has been used to produce cw chemical laser action. This has been accomplished by mixing two supersonic streams of the reactant species in a shock tunnel. The time duration of the laser action is two orders of magnitude longer than the natural laser pulse in a non‐flowing system, i.e., it is limited only by the flow time of the shock tunnel.

ACOUSTIC SURFACE WAVES ON SILICON

R. G. Pratt and T. C. Lim

Appl. Phys. Lett. 15, 403 (1969); http://dx.doi.org/10.1063/1.1652878 (3 pages) | Cited 19 times

Online Publication Date: 21 October 2003

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Acoustic surface wave phase velocities have been measured on (001), (110), and (111) surfaces of single‐crystal silicon using the wedge method. Good agreement between the theoretical and experimental results was obtained.

ELECTRO‐OPTIC EFFECT AND MODULATED INTERFERENCE IN TANTALUM OXIDE FILMS

A. Frova and P. Migliorato

Appl. Phys. Lett. 15, 406 (1969); http://dx.doi.org/10.1063/1.1652879 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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Electromodulation of the interference spectrum of thin anodized Ta2O5 films is analyzed by means of multiple interference theory. The analysis confirms that the dominant effect is an electro‐optic modulation of the refractive index of the film, rather than electrostriction. It is also found that the electro‐optical behavior is similar to that shown by oxygen‐octahedra ferroelectriclike single crystals.

EFFECTS OF SILICON NITRIDE GROWTH TEMPERATURE ON CHARGE STORAGE IN THE MNOS STRUCTURE

E. C. Ross, M. T. Duffy, and A. M. Goodman

Appl. Phys. Lett. 15, 408 (1969); http://dx.doi.org/10.1063/1.1652880 (2 pages)

Online Publication Date: 21 October 2003

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Experimental results of the effects on charge storage in the MNOS structure by varying the growth temperature of the silicon nitride are presented. The range of growth temperature examined is 650–1100°C. The initial charge stored is positive at the lower temperatures, negative at the higher temperatures. The maximum positive charge that can be stored varies continuously with growth temperature. The ability to retain the stored charge when the charging voltage is removed decreases monotonically with increasing growth temperature.

FORMATION OF EPITAXIAL β‐SiC FILMS ON SAPPHIRE

I. H. Khan and Arthur J. Learn

Appl. Phys. Lett. 15, 410 (1969); http://dx.doi.org/10.1063/1.1652881 (5 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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Epitaxial β‐SiC films have been formed on sapphire by chemical conversion of thin single‐crystal Si‐on‐sapphire films. The conversion is obtained by reaction of C2H2 with Si within the temperature range 900–1200°C. It is observed that epitaxy persists up to a certain depth, beyond which film orientation degenerates. The growth morphology of the β‐SiC films appears to be related to surface granularity of the Si films and differs from that observed for conversion of bulk Si.

TUNNEL‐DIODE PHOTORESPONSE

Richard F. Adams and Robert L. Rosenberg

Appl. Phys. Lett. 15, 414 (1969); http://dx.doi.org/10.1063/1.1652882 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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The photoresponse of tunnel diodes has been found to be fast enough under suitable conditions to follow subnanosecond light pulses from a mode‐locked He☒Ne laser. The nonlinearity of the diode electrical characteristic has yielded threshold detection of optical pulses having a peak power of a few milliwatts. Tunnel diodes of varied materials and construction show a similar photoresponse so long as optical frequency exceeds the (indirect) band gap.

TWO CAVITY MODE‐LOCKING OF A He☒Ne LASER

L. B. Allen, R. R. Rice, and R. F. Mathews

Appl. Phys. Lett. 15, 416 (1969); http://dx.doi.org/10.1063/1.1652883 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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Complete mode‐locking of a He☒Ne laser has been achieved using an electro‐optic phase modulator driven at the c∕2L frequency of the laser cavity and situated near one end of a passive cavity which was strongly coupled to the active cavity. This technique permits the use of modulator crystals which are too lossy for intracavity operation and results in shorter pulses than can be obtained with conventional intracavity techniques.

p‐TYPE CADMIUM SULFIDE CRYSTALLINE FILMS

M. Lichtensteiger, I. Lagnado, and H. C. Gatos

Appl. Phys. Lett. 15, 418 (1969); http://dx.doi.org/10.1063/1.1652884 (3 pages) | Cited 13 times

Online Publication Date: 21 October 2003

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p‐type conduction in (000l)‐oriented CdS films sputtered in the presence of phosphine was observed. dc Hall measurements are presented and p‐n junction characteristics are shown.

THREE‐FREQUENCY HETERODYNE SYSTEM FOR ACQUISITION AND TRACKING OF RADAR AND COMMUNICATIONS SIGNALS

M. C. Teich

Appl. Phys. Lett. 15, 420 (1969); http://dx.doi.org/10.1063/1.1652885 (4 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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The operation of a three‐frequency heterodyne system for communications and radar use is discussed. The technique provides important advantages over the conventional heterodyne detector, and is applicable in the infrared, optical, and microwave. The signal‐to‐noise ratio and minimum detectable power for the specific case of an optical or infrared system are calculated and compared with values for the standard configuration. A practical CO2 laser radar has been examined as a particular example of this mode of operation.

PASSIVE Q‐SWITCHING OF A N2O LASER USING ETHYLENE

Henri Brunet and François Voignier

Appl. Phys. Lett. 15, 423 (1969); http://dx.doi.org/10.1063/1.1652886 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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See Also: Erratum

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Passive Q‐switching of a N2O laser operating on the P(19) line at 922.37 cm−1 has been achieved using ethylene as the saturable absorber. Use of a grating together with an iris eliminates spurious oscillations on the other laser lines.

OPTICAL THIRD HARMONIC MEASUREMENTS OF SUBPICOSECOND LIGHT PULSES

R. C. Eckardt and C. H. Lee

Appl. Phys. Lett. 15, 425 (1969); http://dx.doi.org/10.1063/1.1652887 (3 pages) | Cited 29 times

Online Publication Date: 21 October 2003

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A new technique for measurement of picosecond light pulses is described using the unique polarization properties of optical third harmonic generation. A width of half‐maximum intensity less than 0.73 psec is observed for a mode‐locked neodymium glass laser.

OBSERVATION OF RADIATION FROM NONLINEAR POLARIZATION SIDEBAND IN ARGON LASERS

H. Statz, G. A. deMars, and C. L. Tang

Appl. Phys. Lett. 15, 428 (1969); http://dx.doi.org/10.1063/1.1652888 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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An argon laser oscillating at 4880 and 5145 Å, when the cavity lengths for the two transitions have been made unequal, shows anomalous beat notes in the 4880 Å line which correspond to mode spacing characteristic of the 5145 Å line, and similarly, the 5145 Å line beat spectrum contains frequencies belonging to the 4880 Å cavity. These observations are quantitatively explained by radiation from nonlinear polarization sidebands. The interaction between the lines occurs via their common lower laser state. Nonlinear polarization sidebands have been postulated in the past to be responsible for mode‐locking phenomena and the generation of ultrashort pulses, but their direct observation in conventional lasers is, in general, difficult since the polarization sidebands coincide with cavity modes.

THEORETICAL CALCULATION OF PHOTOCONDUCTIVITY INDUCED BY A MULTIPLE‐PHOTON ABSORPTION PROCESS IN SEMICONDUCTORS

Jick H. Yee

Appl. Phys. Lett. 15, 431 (1969); http://dx.doi.org/10.1063/1.1652889 (3 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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See Also: Erratum

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Based on a volume and a surface recombination process, a general theoretical calculation of the photoconductivity induced by a multiple‐photon absorption process is presented. As an example, the calculation is applied to the two‐photon absorption process.
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