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15 Nov 1969

Volume 15, Issue 10, pp. 311-347


DIODES IN SILICON CARBIDE BY ION IMPLANTATION

H. L. Dunlap and O. J. Marsh

Appl. Phys. Lett. 15, 311 (1969); http://dx.doi.org/10.1063/1.1652838 (3 pages) | Cited 17 times

Online Publication Date: 21 October 2003

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We report here the formation of n‐type layers with ion‐implanted nitrogen or antimony in p‐type α‐SiC requiring maximum process temperatures of 1400 and 1600°C respectively for only a few minutes. This is believed to be the first confirmation of donor behavior by antimony in SiC. Electrical characteristics of these implanted layers have been evaluated by Hall and sheet resistivity measurements. Junction devices formed from the implanted layers have shown excellent forward and reverse characteristics at operating temperatures to 400°C.

TEMPORAL ASPECTS OF THE SELF‐FOCUSING OF OPTICAL BEAMS

J. A. Fleck and P. L. Kelley

Appl. Phys. Lett. 15, 313 (1969); http://dx.doi.org/10.1063/1.1652839 (3 pages) | Cited 17 times

Online Publication Date: 21 October 2003

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Numerical solutions are presented for a time‐dependent two‐dimensional wave equation in which the nonlinear contribution to the refractive index is governed by a relaxation equation. For input pulse widths comparable to the relaxation time, pulse shapes are asymmetrically distorted and self‐focusing is inhibited but there is no indication of beam size stabilization.

DIRECT OBSERVATION OF THE MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW‐TEMPERATURE HIGH‐FREQUENCY PHOTOCAPACITANCE

C. T. Sah, L. L. Rosier, and L. Forbes

Appl. Phys. Lett. 15, 316 (1969); http://dx.doi.org/10.1063/1.1652840 (3 pages) | Cited 16 times

Online Publication Date: 21 October 2003

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A simple method is proposed and demonstrated which provides a direct and reliable observation of the multiplicity of charge states of impurity centers. This is achieved by recording the high‐frequency photocapacitance changes in a reverse‐biased p‐n junction at a low temperature during monochromatic illuminations at different wavelengths. The photon energy is first chosen so that it is above the threshold required to excite one of the trapped electrons at the impurity center, but below the threshold of exciting the next electron. After the capacitance change is completed, the photon energy is increased to the next range to excite the second trapped electron into the conduction band. The equality of the change of the squared capacitance during these two illumination periods then implies a multiplicity of three of the charge state. The procedure may be repeated for more than three charge states. An example is given for a sulfur‐doped silicon p + n junction whose double donor levels have thermal activation energies of 0.30 and 0.55 eV below the conduction‐band edge.

DF☒CO2 AND HF☒CO2 CONTINUOUS‐WAVE CHEMICAL LASERS

Terrill A. Cool, Theodore J. Falk, and Ronald R. Stephens

Appl. Phys. Lett. 15, 318 (1969); http://dx.doi.org/10.1063/1.1652841 (3 pages) | Cited 17 times

Online Publication Date: 21 October 2003

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Continuous‐wave chemical laser operation has been observed at 10.6 μ in CO2 pumped by vibrational energy released from chemical reactions forming excited DF and HF molecules. A two‐step vibrational energy transfer mechanism is proposed to explain the pumping of CO2 by chemically formed HF. The results suggest improved performance occurs when simple chain reactions are operative.

DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON

T. W. Sigmon and J. F. Gibbons

Appl. Phys. Lett. 15, 320 (1969); http://dx.doi.org/10.1063/1.1652842 (3 pages) | Cited 37 times

Online Publication Date: 21 October 2003

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The variation of electron and hole diffusivity and drift velocity in the ``warm electron'' range of electric field (1–50 kV∕cm) has been measured for 〈111〉‐oriented silicon at 300°K. These measurements were obtained from the transient currents produced from a thin layer of electrons or holes propagating through the high‐field region of a reverse‐biased p+−ν−n+ diode. Use of a sampling oscilloscope in conjunction with an analog‐to‐digital converter and averaging system resulted in significant improvement of the resolution and statistics of the measurement and allowed digital readout of the resulting data. Diffusivity of both electrons and holes was found to decrease slightly below the low‐field values in the electric field range of 6–50 kV∕cm. Drift velocity versus electric field was measured and found to be reasonably consistent with the literature.

``MEMORY EXCHANGE'' IN AMORPHOUS SEMICONDUCTORS

M. Kikuchi and S. Iizima

Appl. Phys. Lett. 15, 323 (1969); http://dx.doi.org/10.1063/1.1652843 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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Experimental observations of the interaction of the memory in amorphous semiconductors are described. Between two pairs of electrodes located sufficiently close by, memory exchange has been observed, namely, switch‐on or ``lock‐on'' (memory setting) of one pair of electrodes unlocks the memory of the other pair. The results are attributed to the thermal interaction between ``lock‐on'' filament and switch‐on filament.

ELECTRONICALLY TUNABLE ACOUSTO‐OPTIC FILTER

S. E. Harris, S. T. K. Nieh, and D. K. Winslow

Appl. Phys. Lett. 15, 325 (1969); http://dx.doi.org/10.1063/1.1652844 (2 pages) | Cited 23 times

Online Publication Date: 21 October 2003

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Experimental results on a new type of electronically tunable optical filter are described. Tuning from 7000 to 5500 Å has been obtained by changing an acoustic driving frequency from 750 to 1050 MHz. A band pass of less than 2 Å, a corrected peak transmission of 50%, and an average skirt rejection ratio of about 45 dB have been obtained.

THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN

H. P. Maruska and J. J. Tietjen

Appl. Phys. Lett. 15, 327 (1969); http://dx.doi.org/10.1063/1.1652845 (3 pages) | Cited 482 times

Online Publication Date: 21 October 2003

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Single‐crystalline, colorless, GaN has been prepared by a vapor‐phase growth technique previously used to prepare GaAs, GaP, and GaSb. These crystals are the first reported speciments of GaN suitable for good electrical and optical evaluation of this compound. It has been determined that GaN has a direct energy bandgap of 3.39 eV, and that undoped crystals prepared by this method have a very high inherent electron concentration, typically above 1019∕cm3, which is probably related to a high density of nitrogen vacancies. Conducting p‐type specimens have been prepared using Ge as the dopant; but this result has been difficult to reproduce, and the samples have been electrically inhomogeneous.

SUPERCONDUCTING PROPERTIES OF NIOBIUM‐TITANIUM‐NITRIDE THIN FILMS

J. R. Gavaler, D. W. Deis, J. K. Hulm, and C. K. Jones

Appl. Phys. Lett. 15, 329 (1969); http://dx.doi.org/10.1063/1.1652846 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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A series of Nb☒Ti☒N films have been prepared, with various Nb∕Ti ratios, by a high purity, reactive sputtering process. A maximum in transition temperature (at ∼ 15.5°K) has been obtained for a composition of Nb0.5Ti0.5N. Critical field and critical current measurements indicate a degradation in these properties with increasing titanium content, contrary to results reported previously.

MEASUREMENT OF IRON DIFFUSION IN AN Fe‐3% Si ALLOY BY MEANS OF THE MÖSSBAUER TECHNIQUE

Sanford J. Lewis and Paul A. Flinn

Appl. Phys. Lett. 15, 331 (1969); http://dx.doi.org/10.1063/1.1652847 (3 pages) | Cited 18 times

Online Publication Date: 21 October 2003

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Iron diffusion in an Fe‐3% Si alloy has been studied by means of the Mössbauer effect. The results in this iron‐base system agree closely with conventional measurements and do not appear to exhibit the factor of 2 anomaly with the Singwi and Sjölander analysis which Knauer and Mullen observed for iron in dilute solution. The values obtained can be described by the equation
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.

ANOMALOUS DIFFUSION AND RESISTIVITY OF A TURBULENT, WEAKLY IONIZED PLASMA

G. A. Garosi, G. Bekefi, and Michael Schulz

Appl. Phys. Lett. 15, 334 (1969); http://dx.doi.org/10.1063/1.1652848 (4 pages) | Cited 9 times

Online Publication Date: 21 October 2003

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The plasma loss rate and certain transport coefficients of a dc discharge in the presence of turbulent argon‐gas flow are found to vary strongly with Reynolds number (Re). The loss rate increases by a factor of 15 as Re is increased from zero to 6300.

A NEW MEASUREMENT OF THE VELOCITY‐FIELD CHARACTERISTIC OF GaAs

B. Fay and G. S. Kino

Appl. Phys. Lett. 15, 337 (1969); http://dx.doi.org/10.1063/1.1652849 (3 pages) | Cited 9 times

Online Publication Date: 21 October 2003

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The velocity‐field characteristic for electrons in GaAs has been measured in the negative differential mobility region between 4.5 and 11 kV∕cm by a new direct method involving probe measurements on the surface of a bulk GaAs two‐port amplifier. The measurements were taken on GaAs of resistivity in the 500–1000 Ω‐cm range.

AN OPTICAL IMAGING METHOD FOR DIRECT OBSERVATION AND STUDY OF ACOUSTIC SURFACE WAVES

B. H. Soffer, D. H. Close, and M. E. Pedinoff

Appl. Phys. Lett. 15, 339 (1969); http://dx.doi.org/10.1063/1.1652850 (4 pages) | Cited 10 times

Online Publication Date: 21 October 2003

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An optical‐spatial filtering technique for studying complex, high frequency, standing and traveling acoustic surface waves is described. The relative amplitude distribution is directly displayed, and the wavelength and velocity are accurately measured. The velocity for z propagation on a y‐cut LiNbO3 crystal is found to be 3472.5 ± 1.5 m‐sec−1.

CZOCHRALSKI GROWTH AND PROPERTIES OF YAlO3 LASER CRYSTALS

M. J. Weber, M. Bass, K. Andringa, R. R. Monchamp, and E. Comperchio

Appl. Phys. Lett. 15, 342 (1969); http://dx.doi.org/10.1063/1.1652851 (4 pages) | Cited 104 times

Online Publication Date: 21 October 2003

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Czochralski growth characteristics of a new laser host crystal, YAlO3, and measurements of its optical, thermal, and mechanical properties are reported. Stimulated emission from Nd3+ in YAlO3 has been observed.

CONTINUOUS, COHERENT OSCILLATION IN n‐InSb

Munecazu Tacano and Shoei Kataoka

Appl. Phys. Lett. 15, 345 (1969); http://dx.doi.org/10.1063/1.1652852 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Detailed measurements of the oscillation frequencies in n‐InSb at 77°K as a function of dc sample current and magnetic field are described. These show the existence of two modes of instabilities, which are in the ranges of 0.2 to 0.8 GHz and of a few to several tens of MHz, respectively.
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