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15 Aug 1969

Volume 15, Issue 4, pp. 109-128


LASER RECOMBINATION TRANSITION IN p‐TYPE GaAs

J. A. Rossi, N. Holonyak, P. D. Dapkus, J. B. McNeely, and F. V. Williams

Appl. Phys. Lett. 15, 109 (1969); http://dx.doi.org/10.1063/1.1652924 (2 pages) | Cited 13 times

Online Publication Date: 21 October 2003

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Data are presented (77°K) showing that laser transitions to either the valence band edge or to the acceptor, or both, are possible in a specific impurity concentration range (2 × 1017−1018∕cm3) in GaAs:Zn and GaAs:Cd. These data are observed on a low‐loss crystal structure that is pumped uniformly.

OSCILLATION AND DOUBLING OF THE 0.946‐μ LINE IN Nd3+:YAG

R. W. Wallace and S. E. Harris

Appl. Phys. Lett. 15, 111 (1969); http://dx.doi.org/10.1063/1.1652925 (2 pages) | Cited 19 times

Online Publication Date: 21 October 2003

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The paper reports oscillation and doubling of the 0.946‐μ line in Nd3+:YAG. Peak, Q‐switched output powers of approximately 2 kW at 0.473 μ were obtained. The results of a calculation for optimum nonlinear coupling to an internal Q‐switched laser are given.

QUENCHING OF HELIUM AFTERGLOW BY INFRARED PHOTONS

J. P. Kaplafka, H. Merkelo, and L. Goldstein

Appl. Phys. Lett. 15, 113 (1969); http://dx.doi.org/10.1063/1.1652926 (2 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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The visible afterglow radiation from low‐pressure weakly ionized helium exhibits a partial quenching due to absorption of infrared photons (0.11–0.14 eV). The helium sample is placed in the cavity of a Q‐switched CO2 laser and studied at gas temperatures in the range from 77 to 300°K. The partial quenching appears to originate from photon‐induced change of population of a state or states of a neutral or ionic helium molecule.

KINETICS AND EFFICIENCY OF INFRARED‐TO‐VISIBLE CONVERSION IN LaF3:Yb,Er

J. D. Kingsley, G. E. Fenner, and S. V. Galginaitis

Appl. Phys. Lett. 15, 115 (1969); http://dx.doi.org/10.1063/1.1652927 (3 pages) | Cited 11 times

Online Publication Date: 21 October 2003

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The results of an analysis of the energy transfer and two‐step excitation in LaF3:Yb,Er are presented. The physical model assumes that the Yb3+ and Er3+ ions are tightly coupled and transfer occurs both ways. The simple model used is able to explain the experimentally observed time dependence and radiant efficiency provided one assumes the following decay times: Yb3+(5F5∕2), 2 msec; Er3+(4F7∕2), ∼1 μsec; Er3+(4S3∕2), 0.125 msec.

ION‐BOMBARDMENT‐ENHANCED ETCHING OF SILICON

J. F. Gibbons, E. O. Hechtl, and T. Tsurushima

Appl. Phys. Lett. 15, 117 (1969); http://dx.doi.org/10.1063/1.1652928 (3 pages) | Cited 21 times

Online Publication Date: 21 October 2003

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A method is described which permits rapid and precise selective etching of silicon crystal surfaces without protecting any part of the surface during the etch procedure. Prior to the etching process the areas to be etched are subjected to an ion‐bombardment treatment, which increases the etch rate in the bombarded surface layer compared to the etch rate of untreated silicon. Etching characteristics for silicon crystals bombarded with neon and argon are presented and shown to agree with theoretical predictions based on a simple model in which the etching characteristics are related to implantation‐produced cluster damage.

COOLING LIMITS FOR SOLENOID STABILIZATION IN THE VICINITY OF THE He4 λ‐POINT

T. H. K. Frederking and Vance Purdy

Appl. Phys. Lett. 15, 119 (1969); http://dx.doi.org/10.1063/1.1652929 (2 pages)

Online Publication Date: 21 October 2003

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The superfluid He II transition to the normal state and the critical dissipation rates for near‐isothermal solenoid operation have been measured near the λ point. In contrast to the superfluid quenching limit, the solenoid cooling stability limit was found to be finite at the λ point.

HARMONIC GENERATION AND SUBMILLIMETER WAVE MIXING WITH THE JOSEPHSON EFFECT

D. G. McDonald, V. E. Kose, K. M. Evenson, J. S. Wells, and J. D. Cupp

Appl. Phys. Lett. 15, 121 (1969); http://dx.doi.org/10.1063/1.1652930 (2 pages) | Cited 24 times

Online Publication Date: 21 October 2003

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By observing constant‐voltage steps from Josephson junctions at voltages as high as 17 mV we deduce that junctions can generate harmonics up to frequencies as high as 8200 GHz. In consonance with this, submillimeter wave laser detection, harmonic generation, and mixing are demonstrated. These results suggest a model for the upper frequency limit of the Josephson effect.

INFRARED HOLOGRAPHY AT 10.6μm

Jay S. Chivian, R. N. Claytor, and D. D. Eden

Appl. Phys. Lett. 15, 123 (1969); http://dx.doi.org/10.1063/1.1652931 (3 pages) | Cited 18 times

Online Publication Date: 21 October 2003

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Infrared holography at 10.6 μm has been accomplished by using a thermochromic material, cuprous mercuric iodide, to record an on‐axis interference pattern. The pattern is subsequently reduced in a two‐step photographic process, and reconstruction is accomplished in the visible with He☒Ne laser light.

POSSIBILITY OF ULTRAHIGH CRITICAL FIELDS IN GRANULAR HARD SUPERCONDUCTORS

J. H. P. Watson

Appl. Phys. Lett. 15, 125 (1969); http://dx.doi.org/10.1063/1.1652932 (3 pages)

Online Publication Date: 21 October 2003

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This paper suggests that refractory superconductors in the form of grains connected by electron tunneling may possess upper critical fields in the megagauss range.

CONTROL OF ELECTRON EMISSION BY ELASTIC SURFACE WAVES

V. O. Blackledge and I. Kaufman

Appl. Phys. Lett. 15, 127 (1969); http://dx.doi.org/10.1063/1.1652933 (2 pages)

Online Publication Date: 21 October 2003

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Control of electron emission from a photoemissive surface on a piezoelectric substrate by the electric fields of an elastic wave has been demonstrated.
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ERRATUM: A Thermally‐Pumped CO2 Laser

Michael E. Fein, J. T. Verdeyen, and B. E. Cherrington

Appl. Phys. Lett. 15, 128 (1969); http://dx.doi.org/10.1063/1.1652934 (1 page)

Online Publication Date: 21 October 2003

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