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15 May 1970

Volume 16, Issue 10, pp. 375-407


LASER EMISSION FROM METAL‐SEMICONDUCTOR BARRIERS ON PbTe AND Pb0.8Sn0.2Te

K. W. Nill, A. R. Calawa, T. C. Harman, and J. N. Walpole

Appl. Phys. Lett. 16, 375 (1970); http://dx.doi.org/10.1063/1.1653031 (3 pages) | Cited 15 times

Online Publication Date: 21 October 2003

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Laser emission is obtained from forward biased evaporated metal barriers on degenerate p‐PbTe and p‐Pb0.8Sn0.2Te at T=4.2°K. Metals with small work functions such as In, Pb, and Zn produce a degenerate inverted n‐type surface region on p‐type samples without chemical doping. Low‐threshold laser emission has been obtained from these barriers on p‐PbTe at λ = 6.4μ and from Pb barriers on p‐Pb0.8Sn0.2Te at λ = 15μ.

TRANSIENT HIGH‐DENSITY INJECTION IN A SEMICONDUCTOR WITH TRAPS

Betsy Ancker‐Johnson, William P. Robbins, and David B. Chang

Appl. Phys. Lett. 16, 377 (1970); http://dx.doi.org/10.1063/1.1653032 (4 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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The properties of high‐density injection into p‐InSb at 77 °K are compared with theory. An extension of Dean's theory is in satisfactory agreement with the extensive observations which include density‐dependent growth times.

HIGH‐FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS

P. J. Stiles, L. L. Chang, L. Esaki, and R. Tsu

Appl. Phys. Lett. 16, 380 (1970); http://dx.doi.org/10.1063/1.1653033 (3 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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The photoconductivity edge in amorphous films of GeTe or GeSe is found to shift toward lower photon energies with the application of high electric fields. Electrical measurements indicate that the shift is a bulk effect, not due to junctions at the contact‐semiconductor interface.

INTERACTION BETWEEN B ATOMS AND DEFECTS PRODUCED BY Hg BOMBARDEMENT IN SILICON

G. Della Mea, A. V. Drigo, P. Mazzoldi, G. Nardelli, and R. Zannoni

Appl. Phys. Lett. 16, 382 (1970); http://dx.doi.org/10.1063/1.1653034 (2 pages) | Cited 7 times

Online Publication Date: 21 October 2003

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The lattice disorder produced by 42‐keV Hg ions implanted in B‐doped Si at room temperature has been measured by means of the channeling and of the backscattering of 2‐MeV He ions. An annealing effect connected to B concentration is observed.

COMPARISON OF HF AND DF CONTINUOUS CHEMICAL LASERS: I. POWER

Donald J. Spencer, Harold Mirels, and Theodore A. Jacobs

Appl. Phys. Lett. 16, 384 (1970); http://dx.doi.org/10.1063/1.1653035 (3 pages) | Cited 15 times

Online Publication Date: 21 October 2003

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A continuous DF chemical laser is reported. Population inversion is obtained by diffusing D2 into a supersonic free jet containing F atoms. Output power of the DF laser is compared with a similar HF laser previously reported. The ratio of DF to HF laser output power is 0.7 for fixed supersonic jet conditions and the same molar flow of H2 and D2. The efficiency of conversion of chemical energy to laser energy is approximately 12 and 8 % for the HF and DF lasers, at power levels of 475 and 340 W, respectively.

COMPARISON OF HF AND DF CONTINUOUS CHEMICAL LASERS: II. SPECTROSCOPY

M. A. Kwok, R. R. Giedt, and R. W. F. Gross

Appl. Phys. Lett. 16, 386 (1970); http://dx.doi.org/10.1063/1.1653036 (2 pages) | Cited 11 times

Online Publication Date: 21 October 2003

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Continuous laser action has been observed on several HF and DF vibrational‐rotational transitions. The HF lases between 2.6 and 2.9μ and DF lases between 3.6 and 4.1μ. The lines are identified and the relative intensities are shown.

MAGNETOPLASMA RESONANCE IN SEMICONDUCTOR POWDERS

K. K. Chen, F. L. Galeener, and J. K. Furdyna

Appl. Phys. Lett. 16, 387 (1970); http://dx.doi.org/10.1063/1.1653037 (5 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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We report a new class of resonant interactions of circularly polarized microwaves with powdered n‐type InSb, which is observed only in the cyclotron resonance inactive polarization, at magnetic fields independent of particle size. The new powder resonance is a multiparticle analog of the single‐particle magnetoplasma resonance first reported by Dresselhaus, Kip, and Kittel. Both the position and strength of the observed powder resonance are discussed quantitatively using the Rayleigh extinction cross section for a single particle.

POPULATION INVERSION BETWEEN ΔMF = 0 HYPERFINE SUBLEVELS OF RUBIDIUM AND CESIUM

F. A. Franz

Appl. Phys. Lett. 16, 391 (1970); http://dx.doi.org/10.1063/1.1653038 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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Optical pumping of Rb or Cs subject to relaxation through the formation of relatively long‐lived alkali‐rare‐gas molecular complexes is shown to yield a unique distribution of population throughout the magnetic sublevels of the alkali ground state. Large overpopulations of the sublevels of the upper hyperfine state are obtained for a particular range of the ratio of pumping rate to relaxation rate. The technique may make feasible the construction of a Cs maser.

COHERENT SCATTERING OF HOT ELECTRONS IN THIN GOLD FILMS

R. D. Gould and R. A. Collins

Appl. Phys. Lett. 16, 393 (1970); http://dx.doi.org/10.1063/1.1653039 (3 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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Hot‐electron emission has been observed through the top surface of the Au electrode in Al☒SiO☒Au cold cathodes. Previous investigations have indicated that electrons which have undergone coherent scattering in the Au electrode may only be emitted from pinhole edges. The present measurements are found to be consistent with the existing theory.

LASER INTERACTION WITH A NICKEL‐SAPPHIRE INTERFACE

R. A. Masumura and M. R. Achter

Appl. Phys. Lett. 16, 395 (1970); http://dx.doi.org/10.1063/1.1653040 (2 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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The presence of a 1000‐Å‐thick evaporated nickel layer on the exit surface of a sapphire disk lowers the laser power required for crystallographic‐type damage. A tentative explanation involves a shock phenomenon induced by a confined metal vapor.

DOUBLE INJECTION IN LONG p‐i‐n DIODES WITH DEEP DOUBLE‐ACCEPTOR IMPURITIES

Willes H. Weber

Appl. Phys. Lett. 16, 396 (1970); http://dx.doi.org/10.1063/1.1653041 (4 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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Double injection in long p‐i‐n diodes heavily doped with deep double‐acceptor impurities is discussed. Expressions for the current‐voltage relations in various regimes are derived, and an expression is given for the breakdown voltage characterizing the onset of the negative resistance. As an example, results for Zn‐doped Si are given using estimates of the capture coefficients.

PARAMETRIC AMPLIFICATION OF SURFACE ACOUSTIC WAVES

G. Chao

Appl. Phys. Lett. 16, 399 (1970); http://dx.doi.org/10.1063/1.1653042 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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A parametric surface‐wave amplifier capable of net terminal gain and an electronic gain of 15 to 25 dB is described. The amplifier consists of a three‐frequency lumped‐element varactor parametric amplifier attached to the electrical port of an interdigital surface‐wave transducer. Less than 2 mW of pump power is required and a bandwidth of about 0.6 % at 106 MHz is achieved.

NEW HIGH INTENSITY ION SOURCE WITH VERY LOW EXTRACTION VOLTAGE

R. Geller

Appl. Phys. Lett. 16, 401 (1970); http://dx.doi.org/10.1063/1.1653043 (4 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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A new ion source is described, which produces slow ion beams of I+> 10−2 A cm−2 with extraction voltages Vextr≳102 V and a relatively small spread.

NEAR uv TO YELLOW TUNABLE LASER EMISSION FROM AN ORGANIC DYE

C. V. Shank, A. Dienes, A. M. Trozzolo, and J. A. Myer

Appl. Phys. Lett. 16, 405 (1970); http://dx.doi.org/10.1063/1.1653044 (3 pages) | Cited 51 times

Online Publication Date: 21 October 2003

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Tunable laser emission from 3850 to 5740 Å has been observed from three solvate forms of 4‐Methylumbelliferone. The three distinct lasing forms basic, neutral, and acid, with tuning ranges of 1070, 720, and 1150 Å, respectively, were obtained by adjusting the solvent pH. A tuning range of 1760 Å (from 3910 to 5670 Å) has been obtained in a critically adjusted, slightly acidic solution. The various chemical structures responsible for the broad tuning have been identified. Evidence that the acid form lases from an exciplex (excited complex) state is presented.
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APPOINTMENT OF NEW EDITORS

Hugh C. Wolfe

Appl. Phys. Lett. 16, 407 (1970); http://dx.doi.org/10.1063/1.1653045 (1 page)

Online Publication Date: 21 October 2003

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