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15 Jun 1970

Volume 16, Issue 12, pp. 477-537


HIGH‐EFFICIENCY RED‐EMITTING GaP DIODES GROWN BY SINGLE EPITAXY ON SOLUTION‐GROWN (η≃6%) AND CZOCHRALSKI (η≃2%) SUBSTRATES

W. H. Hackett, R. H. Saul, H. W. Verleur, and S. J. Bass

Appl. Phys. Lett. 16, 477 (1970); http://dx.doi.org/10.1063/1.1653072 (3 pages) | Cited 16 times

Online Publication Date: 21 October 2003

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High external quantum efficiencies have been obtained for GaP red‐emitting diodes fabricated by a single liquid‐phase epitaxy, in which Zn, O‐doped p‐type layers were grown directly on Te‐doped n‐type solution‐grown (SG) and liquid‐encapsulated Czochralski (LEC) substrates. For SG single‐epitaxy diodes, the quantum efficiencies (η≃6%) and the other electrical and electroluminescent characteristics are nearly identical to those observed in the previously reported double‐epitaxy diodes, demonstrating that the double‐epitaxy structure is not essential for high efficiencies. For LEC single‐epitaxy diodes, the quantum efficiencies (η≃2%) establish for the first time the present utility and future potential of LEC crystals in fabricating efficient diodes by single epitaxy.

FREQUENCY DEPENDENCE OF ULTRASONIC ATTENUATION IN ZINC OXIDE AT ROOM TEMPERATURE

D. H. R. Price and C. D. W. Wilkinson

Appl. Phys. Lett. 16, 480 (1970); http://dx.doi.org/10.1063/1.1653073 (3 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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The frequency dependence of the attenuation of acoustic waves in zinc oxide at microwave frequencies was measured using light‐scattering techniques. For a longitudinal wave propagating along the c axis a f2 dependence was found and for a shear wave perpendicular to the c axis the frequency dependence was not f2; the most probable reason being the presence of scattering centers in the crystal.

CO2 LASER MODULATION BY HOLE INJECTION IN n‐TYPE InSb

J. Benoit

Appl. Phys. Lett. 16, 482 (1970); http://dx.doi.org/10.1063/1.1653074 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Light absorption by injected holes in n‐type InSb near liquid nitrogen temperature is used to modulate the CO2 laser. A P+ N junction device is described which achieves a good modulation efficiency up to a few megahertz with a driving power of 300 mW. Such a modulator can be controlled by applying an external dc magnetic field.

ELECTRICAL FIELD DISTRIBUTION ASSOCIATED WITH DYNAMIC SCATTERING IN NEMATIC LIQUID CRYSTALS

Sun Lu and Derick Jones

Appl. Phys. Lett. 16, 484 (1970); http://dx.doi.org/10.1063/1.1653075 (3 pages) | Cited 17 times

Online Publication Date: 21 October 2003

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A small probe was used to measure the electric field distribution in a 1‐cm‐thick cell containing a nematic liquid crystal. It is found that apart from distances of about 100μ from each electrode, the electric field is quite uniform. The field at the anode is at least ten times higher than the average field. This indicates the existance of space‐charge carriers. The cathode also shows the above effect, but to a much smaller extent. The voltage applied to the cell was varied from 1 ∼ 8 kV. Identical results were obtained for the material in its isotropic state. These measurements give support to the model proposed by Heilmeier to explain dynamic scattering in nematic liquid crystals.

PHOTOINDUCED REFRACTIVE INDEX INCREASE IN POLY(METHYLMETHACRYLATE) AND ITS APPLICATIONS

W. J. Tomlinson, I. P. Kaminow, E. A. Chandross, R. L. Fork, and W. T. Silfvast

Appl. Phys. Lett. 16, 486 (1970); http://dx.doi.org/10.1063/1.1653076 (4 pages) | Cited 41 times

Online Publication Date: 21 October 2003

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Ultraviolet laser radiation at 0.325μ m has been found to produce refractive index increases of up to 3×10−3 in poly(methylmethacrylate) and to resolve at least 5000 lines∕mm. The index change is tentatively attributed to localized density increases arising from photoinduced cross linking. Applications to optical waveguides and thick dielectric holograms and gratings are described.

HOLE VELOCITY IN p‐GaAs

Vikram L. Dalal

Appl. Phys. Lett. 16, 489 (1970); http://dx.doi.org/10.1063/1.1653077 (3 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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The drift velocity‐electric field curve for holes in p‐GaAs has been experimentally determined at 300 °K on <111> oriented samples. The velocity becomes a sublinear function of field around E=1.5×104 V∕cm, but no saturation was observed up to the highest fields reached (Emax=6×104 V∕cm, vmax=7.8×106 cm∕sec). This result is in disagreement with the recent predictions of Kim based on analysis of GaAs avalanche diode oscillators.

SIMPLE TEST FOR DOUBLE INJECTION INITIATION OF SWITCHING

I. Balberg

Appl. Phys. Lett. 16, 491 (1970); http://dx.doi.org/10.1063/1.1653078 (3 pages) | Cited 19 times

Online Publication Date: 21 October 2003

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A simple pulse measurement is suggested to check whether the switching phenomena in materials and devices is due to double injection. In the Ovshinsky Threshold Switch used in the present measurement, it is found that this model cannot account for the observation. The results seem to support the ``thermal models'' for the initiation of the switching in this device.

CONVOLUTION AND CORRELATION IN REAL TIME WITH NONLINEAR ACOUSTICS

C. F. Quate and R. B. Thompson

Appl. Phys. Lett. 16, 494 (1970); http://dx.doi.org/10.1063/1.1653079 (3 pages) | Cited 37 times

Online Publication Date: 21 October 2003

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We propose a method for obtaining the convolution, and correlation, of signals in real time through the nonlinear interaction of two acoustic waves in ferroelectric crystals. The experimental results presented here for the convolution of two 1350‐MHz signals indicate that the strength of the interaction is sufficient to provide new signal processing devices.

IMPROVED POLARIZATION HOLOGRAPHY

J. Politch, J. Shamir, and J. Ben Uri

Appl. Phys. Lett. 16, 496 (1970); http://dx.doi.org/10.1063/1.1653080 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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Using circularly polarized light, high‐quality holograms can be obtained, containing information on the polarization characteristics of the object. A theoretical derivation and some experimental demonstrations are given.

HOLOGRAM WAVELENGTH SELECTOR FOR DYE LASERS

H. Kogelnik, C. V. Shank, T. P. Sosnowski, and A. Dienes

Appl. Phys. Lett. 16, 499 (1970); http://dx.doi.org/10.1063/1.1653081 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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A new type of wavelength selector for dye lasers is proposed. It consists of a holographically produced dielectric grating which is backed by a reflecting layer. Gratings of 2300, 3300, and 3700 lines∕mm were recorded in dichromated gelatine and tested in an exciplex umbelliferone laser tuning from 3910 to 5670 Å.

LOW THRESHOLD ELECTRON BEAM PUMPED CdS LASERS WITH END‐PUMPED CONFIGURATION

F. H. Nicoll

Appl. Phys. Lett. 16, 501 (1970); http://dx.doi.org/10.1063/1.1653082 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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End‐pumped lasing of thin CdS crystals is reported for electron energies down to 5 kV at 77°K and 9 kV at room temperature as a result of special treatment of the Fabry‐Perot mirrors. These mirrors consisted of 500 Å of aluminum on the bombarded side and a multi‐layer dichroic reflector on the opposite side. The very low voltage thresholds were obtained only where localized electron beam heating was used to produce bubbles in the aluminum; in other areas where the aluminum was flat, the threshold was greater than 25 kV. Improved reflectivity and possibly a confocal cavity contribution are believed to be responsible for this pronounced decrease of threshold.

TRANSVERSELY EXCITED ATMOSPHERIC PRESSURE CO2 LASERS

A. J. Beaulieu

Appl. Phys. Lett. 16, 504 (1970); http://dx.doi.org/10.1063/1.1653083 (2 pages) | Cited 145 times

Online Publication Date: 21 October 2003

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Laser action at 10. 6 μm has been achieved in CO2☒N2☒He gas mixtures at all pressures up to atmospheric by means of fast electrical discharges transverse to the laser axis. The atmospheric pressure of operation is very promising as the laser energy per pulse increases with pressure and the average power per unit volume is proportional to the square of the operating pressure. A brief description of a simple laser of this type, operating at atmospheric pressure is given along with some of the major achievements to date using this technique.

TEMPERATURE COEFFICIENTS OF AVALANCHING P+NN+ JUNCTIONS WITH CARRIER TRAPPING

E. P. EerNisse

Appl. Phys. Lett. 16, 506 (1970); http://dx.doi.org/10.1063/1.1653084 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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The steady‐state characteristics of avalanching P+NN+ junctions have been calculated numerically as a function of temperature when carrier trapping on a multiple level trap is present in the space‐charge region. Theory and experiment are compared for two devices of known doping profile. Negative temperature coefficients are predicted and measured at current densities higher than 50 A∕cm2 and are proposed as the catastrophic failure mechanism for avalanche devices in a neutron irradiation environment. The agreement between experiment and theory substantiates assumptions about the insensitivity of the results to the value of capture rates used in the calculations.

MEASUREMENT OF THE UPPER LASER LEVEL LIFETIME IN THE HELIUM‐CADMIUM LASER BY FAST CAVITY DUMPING TECHNIQUES

M. B. Klein and D. Maydan

Appl. Phys. Lett. 16, 509 (1970); http://dx.doi.org/10.1063/1.1653085 (3 pages) | Cited 20 times

Online Publication Date: 21 October 2003

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The upper level lifetime for the 4416‐Å transition in the helium‐cadmium laser has been measured to be 670 ± 70 nsec. The measurements were accomplished by rapidly removing the intracavity laser power while monitoring the sidelight emission from the discharge at the laser wavelength. This measurement technique is applicable to other laser systems with upper level lifetimes which are long compared with the cavity dumping time, and has the advantage of providing a direct measurement of the upper level lifetime.

MAGNETIC‐FIELD DIP MEASUREMENTS ON THE He☒Cd LASER

A. Dienes and T. P. Sosnowski

Appl. Phys. Lett. 16, 512 (1970); http://dx.doi.org/10.1063/1.1653086 (3 pages) | Cited 13 times

Online Publication Date: 21 October 2003

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We have measured the width of the zero‐magnetic‐field power dip for the 4416‐Å transition of the He☒Cd laser. The width is proportional to the decay rate of the electric quadrupole moment, γa(2), of the upper laser level. γa(2), which is of the order of 1 MHz, was found to vary linearly with He pressure. This variation is attributed to MJ‐mixing collisions with He atoms. The value of the ``alignment'' cross section σHe(2) is estimated from the slope of this pressure dependence. The decay rate was also found to depend on the Cd density in the discharge. This dependence is tentatively attributed to deexcitation and MJ‐mixing collisions with electrons.

HIGH‐RESOLUTION ELECTRON MICROSCOPE IMAGES OF CRYSTAL LATTICE PLANES USING CONICAL ILLUMINATION

Klaus Heinemann and Helmut Poppa

Appl. Phys. Lett. 16, 515 (1970); http://dx.doi.org/10.1063/1.1653087 (2 pages) | Cited 16 times

Online Publication Date: 21 October 2003

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The (111)‐, (200)‐, and (220)‐lattice planes of small vapor‐deposited gold crystals with 2.35‐, 2.04‐, and 1.44‐Å respective interplanar lattice spacings were resolved by high‐resolution transmission electron microscopy. The simultaneous resolution in one micrograph of the three different lattice spacings and the elimination of azimuthal orientation preferences of the imaged lattice planes were achieved by using conical instead of axial specimen illumination methods.

LONGITUDINAL PHOTON FLUX DISTRIBUTION IN LOW‐Q SEMICONDUCTOR LASERS

R. Ulbrich and M. H. Pilkuhn

Appl. Phys. Lett. 16, 516 (1970); http://dx.doi.org/10.1063/1.1653088 (3 pages) | Cited 7 times

Online Publication Date: 21 October 2003

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A nonuniform photon flux distribution over the length of the active region in semiconductor injection lasers has been found by investigating the scattered light perpendicular to the direction of the stimulated light wave. This effect is present only in low‐Q lasers.

STUDY OF FLUORESCENT LIFETIME OF THE ν3 VIBRATIONAL MODE IN SF6

O. R. Wood and S. E. Schwarz

Appl. Phys. Lett. 16, 518 (1970); http://dx.doi.org/10.1063/1.1653089 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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Spontaneous emission from the ν3 fundamental vibration in SF6 gas after excitation by a pulse from a Q‐switched CO2 laser is observed. The pressure dependence of the flourescence decay time indicates that, at low pressure, diffusion of excited molecules followed by deactivation at vessel walls is the dominant relaxation mechanism. At higher pressures, the time for collisional deactivation within the bulk of the gas is measured. Evidence which suggests that a longitudinal‐acoustic‐shock wave was present in the gas at higher pressures is given.

NEW HIGH‐POWER SOURCE OF COHERENT MICROWAVE PHONONS

D. C. Auth

Appl. Phys. Lett. 16, 521 (1970); http://dx.doi.org/10.1063/1.1653090 (3 pages) | Cited 10 times

Online Publication Date: 21 October 2003

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A new scheme for optically exciting intense microsound is proposed. The intense acoustic waves are generated by the enormous spatially periodic pressure gradients that arise under certain conditions from the interference of two high‐power optical beams of short time duration. The technique provides a tuneable source of bulk and surface micro‐acoustic waves.

GRATING COUPLER FOR EFFICIENT EXCITATION OF OPTICAL GUIDED WAVES IN THIN FILMS

M. L. Dakss, L. Kuhn, P. F. Heidrich, and B. A. Scott

Appl. Phys. Lett. 16, 523 (1970); http://dx.doi.org/10.1063/1.1653091 (3 pages) | Cited 129 times

Online Publication Date: 21 October 2003

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See Also: Erratum

Show Abstract
We report a new method of coupling a laser beam to thin‐film optical guided waves which utilizes an optical grating that is made from photoresist and fabricated directly on the film. High efficiency coupling (∼40 %) into a single mode in a glass film is observed.

MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE

E. D. Wolf and R. G. Hunsperger

Appl. Phys. Lett. 16, 526 (1970); http://dx.doi.org/10.1063/1.1653092 (4 pages) | Cited 11 times

Online Publication Date: 21 October 2003

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We have measured the Coates‐Kikuchi pattern degradation of (111) GaAs in the 5‐ to 30‐keV incident electron energy range as a function of 60‐keV cadmium ion dose (1012 to 1015 Cd+∕cm2) at room temperature. Pattern degradation is greater for a given dose at 5‐keV than it is at 30‐keV incident electron energy. Agreement is found between the pattern degradation and measurements of lattice disorder as determined by backscattering of 1‐MeV helium ions. Annealing of the ion‐bombarded samples at temperatures up to 450°C restores the Coates‐Kikuchi pattern quality as the lattice damage is reduced.

EQUILIBRIUM GAS SCATTERING FROM CLEAVED LiF

R. L. Palmer and D. R. O'Keefe

Appl. Phys. Lett. 16, 529 (1970); http://dx.doi.org/10.1063/1.1653093 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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The equilibrium scattering behaviors of He, H2, and Ar from the cleavage plane of LiF have been measured in order to provide a critical test of the cosine law of total scattering for cases where this result is not the redundant result of Knudsen law (diffuse) scattering. These results confirm the general validity of the cosine law and suggest certain symmetry properties of gas‐surface scattering which apparently have not heretofore been recognized.

ELECTRODELESS DISCHARGE MODES IN NEON‐NITROGEN MIXTURES WITH APPLICATION TO THE PLASMA DISPLAY PANEL

John M. Anderson

Appl. Phys. Lett. 16, 531 (1970); http://dx.doi.org/10.1063/1.1653094 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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Discharge buildup and decay was observed in the space between glass‐covered electrodes when a sinusoidal voltage at 50 kHz was applied. Study of the emitted light in a mixture of neon + 10 % nitrogen revealed moving luminous regions, one cathode‐directed which becomes a short‐lived negative glow, and a second single‐ or multiply glowing region anode‐directed which is similar to moving striations in a positive column. Three modes of discharge are observed, continuous and pulsed modes, as reported for the plasma display panel, and a third quasiglow mode, which gives high luminous output and also shows the memory desired for the plasma panel.

OBSERVATION OF SPIN‐WAVE SPECTRUM IN AN INSTABILITY AND MODE‐LOCKING EXPERIMENT

S. Wang and Ta‐lin Hsu

Appl. Phys. Lett. 16, 534 (1970); http://dx.doi.org/10.1063/1.1653095 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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Spin‐wave spectrum in an instability and mode‐locking experiment was observed by using a spectrum analyzer. The experiment confirms that spin‐wave side bands exist. The beating of the side bands with the central band is shown to be the cause for low‐frequency modulation of the reflected microwave power. When a low‐frequency acoustic wave was sent into the sample, the amplitude of the side bands increased at the expense of the central band. Therefore, the effect of magnetoelastic coupling can be used not only to lock the phases of the various spin‐wave modes but also to regulate their amplitudes.
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ERRATUM: ``Spontaneous Parametric Scattering of Light in LiIO3''

A. J. Campillo and C. L. Tang

Appl. Phys. Lett. 16, 537 (1970); http://dx.doi.org/10.1063/1.1653096 (1 page) | Cited 3 times

Online Publication Date: 21 October 2003

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