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15 Jan 1970

Volume 16, Issue 2, pp. 53-85


NANOSECOND GATING OF AN IMAGE INTENSIFIER CAPABLE OF TRIGGERED PICOSECOND PHOTOGRAPHY

D. J. Bradley, J. F. Higgins, and M. H. Key

Appl. Phys. Lett. 16, 53 (1970); http://dx.doi.org/10.1063/1.1653097 (3 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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A high‐gain image intensifier tube has been gated with a laser‐triggered spark gap to produce single‐shot nanosecond exposure, with spatial resolution of 10 1p∕mm. The exposure has been directly calibrated employing a mode‐locked laser pulse train and spatial resolution of 8 1p∕mm has been obtained with picosecond illumination from a single mode‐locked pulse.

EFFICIENT PURELY CHEMICAL cw LASER OPERATION

Terrill A. Cool and Ronald R. Stephens

Appl. Phys. Lett. 16, 55 (1970); http://dx.doi.org/10.1063/1.1653098 (4 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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Continuous‐wave laser operation at 10.6μ has been achieved in the DF☒CO2 and HF☒CO2 molecular systems by purely chemical means. No external energy sources are required; both lasers operate solely by the simple mixing of bottled gases. Experimental results are presented which demonstrate that cw chemical laser operation at high power and high efficiency is realizable in the DF☒CO2 system.

NONLINEAR OPTICAL PROPERTIES OF Ag3SbS3

W. B. Gandrud, G. D. Boyd, J. H. McFee, and F. H. Wehmeier

Appl. Phys. Lett. 16, 59 (1970); http://dx.doi.org/10.1063/1.1653099 (3 pages) | Cited 16 times

Online Publication Date: 21 October 2003

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The nonlinear optical properties of Ag3SbS3 (pyrargyrite) as determined by second harmonic generation (SHG) with the 10.6μ CO2 laser are presented. Phase‐matched nonlinear mixing is possible and the material is suitable as a phase‐matched standard in the infrared for optical nonlinearities.

DYNAMIC SCATTERING IN A ROOM‐TEMPERATURE NEMATIC LIQUID CRYSTAL

Derick Jones, Linda Creagh, and Sun Lu

Appl. Phys. Lett. 16, 61 (1970); http://dx.doi.org/10.1063/1.1653100 (2 pages) | Cited 15 times

Online Publication Date: 21 October 2003

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The dynamic scattering characteristic of a room‐temperature nematic liquid crystal is described. This electro‐optic effect has been observed in many high‐temperature nematic liquid crystals. The material described here has a mesomorphic phase from 11 to 41 °C. A contrast ratio of 30 to 1 is observed with a field of 3.7×104V∕cm.

DOUBLE INJECTION IN Au‐DOPED Si p‐π‐n DIODES

H. R. Zwicker, B. G. Streetman, A. M. Andrews, and H. J. Deuling

Appl. Phys. Lett. 16, 63 (1970); http://dx.doi.org/10.1063/1.1653101 (4 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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Calculations of the J‐V characteristics of Au‐doped Si p‐π‐n devices are presented, using a computer‐aided solution of the general conduction and recombination equations. The three charge states of the Au impurity are included in the computations. The predicted characteristics for a Au density of 5×1016 cm−3 exhibit good agreement with experiment. The calculations reveal the spatial distributions of carriers and space charge within the π region for various injection levels.
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COMMENTS ON MICROWAVE SCATTERING FROM ANISOTROPIC PLASMA TURBULENCE

Dimitri S. Bugnolo

Appl. Phys. Lett. 16, 66 (1970); http://dx.doi.org/10.1063/1.1653102 (2 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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Some comments are directed towards a recent paper on the subject of microwave scattering by a well underdense anisotropic weakly ionized turbulent plasma.

MINORITY CARRIER TRAPPING BY DEFECT CLUSTERS

B. L. Gregory

Appl. Phys. Lett. 16, 67 (1970); http://dx.doi.org/10.1063/1.1653103 (3 pages) | Cited 24 times

Online Publication Date: 21 October 2003

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A theoretical study of the trapping behavior of defect clusters in semiconductors indicates that many of the unusual trapping effects observed in neutron‐irradiated materials are a natural result of placing a large density of otherwise normal deep defects within a defect cluster. The space charge which results from majority carriers trapped on such defects within the cluster produces a potential barrier for majority carriers, or a potential well for minority carriers, which greatly influences the capture kinetics of defects within the cluster. Approximate calculations have been performed for the build‐up of charge within the cluster following a large pulse of injected minority carriers. The calculations predict that the excess conductivity produced by this pulse should decay at an extremely slow nonexponential rate, especially at low temperatures. The predictions are in good agreement with experimental results for photoconductive decay in neutron‐irradiated silicon.

SELECTIVE PERTURBATION OF A MERCURY INFRARED TRANSITION BY A FAST Nd‐LASER PULSE

Peter Platz

Appl. Phys. Lett. 16, 70 (1970); http://dx.doi.org/10.1063/1.1653104 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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See Also: Erratum

Show Abstract
Fast pulses from a Nd: glass laser (10 600 Å), with a rise time of 0.7 nsec and a length of 1.3 nsec at half‐intensity interact with mercury atoms via the 73S1 − 73P2 transition (11 287 Å). The 73S1 level shifts instantaneously to higher energies by 0.29 × 10−6 eV for a laser power of 1 MW∕cm2. Theoretical behavior of the 73S1 level is given. The absorption oscillator strength of the 73S1 − 73P2 transition is deduced to be 0.32±0.06.

THRESHOLD SWITCHING AND THERMAL FILAMENTS IN AMORPHOUS SEMICONDUCTORS

Donald F. Weirauch

Appl. Phys. Lett. 16, 72 (1970); http://dx.doi.org/10.1063/1.1653105 (2 pages) | Cited 26 times

Online Publication Date: 21 October 2003

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Threshold switching in a thick specimen of an amorphous semiconductor was studied. With the aid of an infrared viewer, the existence of a thermal filament during switching was confirmed. By spectral analysis, the temperature of this filament was estimated to be between 650 and 800 °C. No crystals were observed in the nonoxide glass, either before or after switching had occurred.

CHOPPING OF MODE‐LOCKED LASER PULSES BY INTERFEROMETRIC COMBINATION OF FREQUENCY‐SHIFTED PULSES

L. E. Hargrove and Robert L. Rosenberg

Appl. Phys. Lett. 16, 74 (1970); http://dx.doi.org/10.1063/1.1653106 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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Mode‐locked laser pulses can be ``chopped'' into many pulses by interferometrically combining electro‐optically frequency‐shifted pulses. This letter presents analysis of one such scheme and confirming experimental results. Expressions are derived for the output intensity in the form of an envelope function times the input pulse intensity. Criteria are presented for obtaining significant chopping rather than just pulse narrowing and∕or distortion. Calculated examples are in excellent qualitative agreement with the experiments.

AUGER ELECTRON SPECTROSCOPY IN SCANNING ELECTRON MICROSCOPY: POTENTIAL MEASUREMENTS

N. C. MacDonald

Appl. Phys. Lett. 16, 76 (1970); http://dx.doi.org/10.1063/1.1653107 (5 pages) | Cited 28 times

Online Publication Date: 21 October 2003

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The Auger electron spectrum was measured, using an electron spectrometer mounted in a scanning electron microscope (SEM). The shift in the energy of a differentiated carbon and oxygen Auger electron peak was measured as a function of an applied potential on the surface of a specimen. The accuracy of the potential measurements is shown to be quite insensitive to transverse electric fields, and the peak shift as a function of the applied voltage is shown to be linear over a voltage range of greater than −40 to 40V for a carbon peak (E ∼270 eV). Potential differences of less than 2V were measured with a spatial resolution of less than 5μm, for a primary beam current of 1μA, and a primary beam energy of 10 keV. Auger electron peaks for carbon and oxygen together with a normal SEM micrograph are presented to demonstrate, for the first time, Auger electron chemical analysis with high spatial resolution.

ELECTROMIGRATION IN SINGLE‐CRYSTAL ALUMINUM FILMS

F. d'Heurle and I. Ames

Appl. Phys. Lett. 16, 80 (1970); http://dx.doi.org/10.1063/1.1653108 (2 pages) | Cited 41 times

Online Publication Date: 21 October 2003

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Electrical open circuits can be produced in current‐carrying polycrystalline aluminum thin film conductors as a result of electromigration phenomena. In this study, attempts have been made to induce such open circuits in comparable single‐crystal aluminum thin‐film conductors. It has not been possible to do so even after subjecting the latter to relatively high current densities for more than 10 000h. This observation adds strong support to the previous inference that the formation of electromigration‐induced open circuits in polycrystalline aluminum thin film conductors is caused predominantly by diffusion along grain boundaries.

PROBING OF ELASTIC SURFACE WAVES IN PIEZOELECTRIC MEDIA

B. A. Richardson and G. S. Kino

Appl. Phys. Lett. 16, 82 (1970); http://dx.doi.org/10.1063/1.1653109 (3 pages) | Cited 19 times

Online Publication Date: 21 October 2003

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Data are presented which indicate that detection of the rf electrical potential associated with an acoustic surface wave in a piezoelectric medium by a simple point probe can yield extensive information about the propagation characteristics of such waves. Such a probe, in mechanical contact with the propagating surface of a 107‐MHz LiNbO3 delay line, has been used to measure the diffraction pattern of the acoustic energy, spreading of the acoustic beam, insertion loss due to misalignment of the transducer axis with the crystal symmetry axis, and the amplitude and phase variations of the acoustic wave near the output transducer.

EFFECTS OF COBALT ON THE SPIN REORIENTATION TEMPERATURE OF RARE‐EARTH ORTHOFERRITES

L. G. Van Uitert, R. C. Sherwood, E. M. Gyorgy, and W. H. Grodkiewicz

Appl. Phys. Lett. 16, 84 (1970); http://dx.doi.org/10.1063/1.1653110 (2 pages) | Cited 9 times

Online Publication Date: 21 October 2003

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Small substitutions of Co for Fe in the orthorhombic yttrium and rare‐earth orthoferrites greatly reduce uniaxial anisotropy. A percent of Co generally suffices to reorient the net moment from the c axis to the a axis at room temperature. The effect is at least two orders of magnitude greater than that for Sm substitution for other rare‐earth ions.
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