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Volume 16

Issue 12 | 15 Jun | pp. 477-537

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Select this Article		ELECTRON TUNNELING INTO AMORPHOUS GERMANIUM J. W. Osmun and H. Fritzsche Appl. Phys. Lett. 16, 87 (1970); http://dx.doi.org/10.1063/1.1653131 (3 pages) \| Cited 20 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Al☒Al₂O₃☒Ge tunnel junctions were prepared to study electron tunneling into amorphous germanium films. An almost symmetric conductance minimum centered at zero bias without additional structure was observed. The change in conductance from 1V to zero bias is 10³ at 78°K and about 10² at 300°K. The zero bias conductance is 10² times lower at 78°K than at 300°K. The results indicate a large density of states in the gap or near the surface.

Select this Article		TRANSITIONS BETWEEN MODE‐LOCKED STATES IN INTRACAVITY PHASE‐MODULATED LASERS D. L. Lyon and T. S. Kinsel Appl. Phys. Lett. 16, 89 (1970); http://dx.doi.org/10.1063/1.1653132 (3 pages) \| Cited 5 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The transition between the two possible pulse train outputs of a mode‐locked laser was studied. The experimental results are in close agreement with a simple, phenomenological model of the transition.

Select this Article		TECHNIQUE OF MAPPING ACOUSTIC FIELDS BY MEANS OF A POLAROID FILM Keigo Iizuka Appl. Phys. Lett. 16, 91 (1970); http://dx.doi.org/10.1063/1.1653133 (3 pages) Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A standard Polaroid film was proved to be applicable to a quick and easy direct mapping of an acoustic field. The method utilizes the effect of an acoustic field on the developing process of a uniformly pre‐exposed Polaroid film. The method would be most useful for visualization of acoustic field as well as preparing acoustic holograms.

Select this Article		DIRECT OBSERVATION OF A DYNAMIC BURSTEIN SHIFT IN A GaAs:Ge PLATELET LASER P. D. Dapkus, N. Holonyak, R. D. Burnham, and D. L. Keune Appl. Phys. Lett. 16, 93 (1970); http://dx.doi.org/10.1063/1.1653134 (3 pages) \| Cited 17 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Data (77°K) are presented showing a dynamic Burstein shift of the absorption edge during spontaneous and laser operation of GaAs:Ge platelets. This is indicated directly by an increase in the relative transmission of the pump power through the sample with increased pump excitation. By the use of pumps with photon energies (1.527 eV) closely matched to the GaAs absorption edge (1. 513 eV), changes in the relative transmission of from 4 to 30% have been achieved. The data presented also show a change in the rate of decrease of the absorption with the onset of stimulated emission by the platelet.

Select this Article		SELF‐STABILIZATION AND NARROWING OF OPTICAL PULSES FROM GaAs JUNCTION LASERS BY INJECTION CURRENT FEEDBACK Thomas L. Paoli and José E. Ripper Appl. Phys. Lett. 16, 96 (1970); http://dx.doi.org/10.1063/1.1653135 (2 pages) \| Cited 7 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Self‐induced intensity pulsations of continously operating GaAs junction lasers have been frequency‐stabilized and narrowed by regenerative feedback of oscillations in the injection current. The spectral width of the pulse rate has been reduced by a factor of 20 to less than 30 kHz while the optical pulse width was reduced by at least a factor of 2 to less than 180 psec. These results suggest that a well‐stabilized source of short optical pulses can be constructed from GaAs injection lasers without external microwave circuitry.

BROWSE VOLUMES

1 Feb 1970

Volume 16, Issue 3, pp. 87-144

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Select this Article		ON THE PROPAGATION OF HIGH‐CURRENT BEAMS OF RELATIVISTIC ELECTRONS IN GASES M. L. Andrews, H. Davitian, D. A. Hammer, H. H. Fleischmann, J. A. Nation, and N. Rostoker Appl. Phys. Lett. 16, 98 (1970); http://dx.doi.org/10.1063/1.1653136 (3 pages) \| Cited 22 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The transit time of high current beams of relativistic electrons (40–50 kA, 350 keV) through an air filled (0.2–2.5 Torr) drift tube has been measured. It is longer than expected, even allowing for the loss of beam front electrons and for orbiting of the electrons in the beam self‐magnetic field. Also, a pressure‐dependent nonuniformity in the beam motion was observed which may account for this delay.

Select this Article		VACANCY CLUSTERS IN DISLOCATION‐FREE SILICON A. J. R. de Kock Appl. Phys. Lett. 16, 100 (1970); http://dx.doi.org/10.1063/1.1653111 (3 pages) \| Cited 51 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Dislocation‐free silicon crystals made by the floating zone technique contain vacancy clusters formed during cooling of the crystal after growth. The distribution and concentration of these defects have been determined. A model is presented describing the formation of these clusters. The influence of vacancy clusters on the leakage current of planar diodes is investigated.

Select this Article		ION IMPLANTATION DEPTH DISTRIBUTIONS: ENERGY DEPOSITION INTO ATOMIC PROCESSES AND ION LOCATIONS David K. Brice Appl. Phys. Lett. 16, 103 (1970); http://dx.doi.org/10.1063/1.1653112 (4 pages) \| Cited 31 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A useful method of calculating the energy∕unit depth deposited in atomic processes by energetic ions in solids is presented. The calculated energy density is shown to correlate well with previous Monte Carlo calculations of the vacancy concentration resulting from ion bombardment and recent experimental measurements of the depth distribution of ion damage. The method also provides the depth distribution of ions in the solid as a function of their energy during the stopping process. This information would allow, for example, calculation of the location and rate of various energy‐dependent interactions between incident ions and host atoms.

Select this Article		DEPTH DISTRIBUTION OF DIVACANCIES IN 400‐keV O⁺ ION‐IMPLANTED SILICON H. J. Stein, F. L. Vook, and J. A. Borders Appl. Phys. Lett. 16, 106 (1970); http://dx.doi.org/10.1063/1.1653113 (3 pages) \| Cited 27 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The integral depth distribution for divacancies produced in silicon at room temperature by 400‐keV O⁺ion implantation has been measured. The divacancy distribution was determined from repeated measurements of the characteristic 1. 8μ absorption band following successive anodizations and strippings of the implanted layer. Most of the divacancies are located between 4500 and 12 000 Å with a half‐value at ∼ 7500 Å and a concentration of ∼ 4 × 10¹⁹ cm⁻³ near the center of the distribution. The measured integral depth distribution for the ion‐produced divacancies is proportional within experimental error to theoretical calculations by Brice for the integral depth distribution of ion energy spent in atomic processes.

Select this Article		DEPTH DISTRIBUTION OF EPR CENTERS IN 400‐keV O⁺ ION‐IMPLANTED SILICON K. L. Brower, F. L. Vook, and J. A. Borders Appl. Phys. Lett. 16, 108 (1970); http://dx.doi.org/10.1063/1.1653114 (3 pages) \| Cited 21 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The depth distribution of Si‐P3 centers in 400‐keV O⁺ ion‐implanted silicon was determined using EPR measurements in conjunction with anodization and stripping of the implanted layer. The depth distribution of the EPR centers compares favorably to theoretical calculations by Brice for the depth distribution of the energy deposited into atomic processes and with infrared absorption measurements of the depth distribution of divacancies by Stein, Vook, and Borders. The combined EPR and infrared measurements indicate that the Fermi level in the damaged layer lies between E_c − 0.21 eV and E_v + 0.25 eV.

Select this Article		SPIN‐WAVE EXPERIMENTS: PARAMETRIC EXCITATION OF ACOUSTIC WAVES AND MODE‐LOCKING OF SPIN WAVES S. Wang and Ta‐lin Hsu Appl. Phys. Lett. 16, 111 (1970); http://dx.doi.org/10.1063/1.1653115 (3 pages) \| Cited 3 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract In a spin‐wave instability experiment, a YIG disk was bonded onto a quartz rod with a transducer attached to it, and was placed in a microwave cavity in a parallel‐pumping arrangement. For microwave power above the threshold for spin‐wave instability, parametric generation of acoustic waves was observed. The generation was evidenced by the simultaneous appearance of a low‐frequency oscillation in the reflected microwave power and at the transducer. In a subsequent experiment, a low‐frequency acoustic wave was sent into YIG through the transducer. A great enhancement of the oscillation in the reflected microwave power was observed. The enhancement was due to phase‐locking of spin‐wave modes.

Select this Article		LASER‐GENERATED STRESS WAVES N. C. Anderholm Appl. Phys. Lett. 16, 113 (1970); http://dx.doi.org/10.1063/1.1653116 (3 pages) \| Cited 75 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A method of generating stress waves with a laser is demonstrated using a transparent material to impede the expansion of the vaporized absorber. A stress wave whose magnitude is 34 kbar and whose width at half‐maximum is equal to the width of the laser pulse is reported.

Select this Article		SHOT NOISE IN JOSEPHSON POINT CONTACTS H. Kanter and F. L. Vernon Appl. Phys. Lett. 16, 115 (1970); http://dx.doi.org/10.1063/1.1653117 (3 pages) \| Cited 12 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Experimental evidence is presented showing that the noise in Josephson point contacts is shot noise limited. Comparison with theory indicates that the pair current contribution is not as large as predicted.

Select this Article		CARBON MONOXIDE CHEMICAL LASER UTILIZING A FAST FLOW SYSTEM Curt Wittig, J. C. Hassler, and P. D. Coleman Appl. Phys. Lett. 16, 117 (1970); http://dx.doi.org/10.1063/1.1653118 (2 pages) \| Cited 24 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Lasing from chemically formed CO in the range 5.20–5.60 μ m has been observed in a fast flow (∼ 120 m∕sec) system. Atomic oxygen was formed in an O₂☒He discharge and passed into the optical cavity where it reacted with CS₂. The chemical reaction and excitation mechanism are discussed and compared to systems in which flash photolysis was used with CS₂☒O₂ mixtures. Power levels of the order of 0.1 W from an interaction region 10 mm i. d. ×30 cm long were obtained with an input energy of 3 J per pulse into the O₂ dissociator.

Select this Article		SIMULTANEOUS OSCILLATION ON TWO ISOTOPIC LINES IN CO₂ AND N₂O LASERS L. J. Schoen and A. M. Ronn Appl. Phys. Lett. 16, 119 (1970); http://dx.doi.org/10.1063/1.1653119 (2 pages) \| Cited 2 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The intensity of emission of a CO₂ laser has been studied as a function of mole % of ¹³CO₂. It was observed that over the range 1.1 to 56.1 mole % ¹³CO₂ the integrated intensity did not change to within the ± 10 % accuracy of the measurement. Laser action switched from the ¹³C to the ¹²C species as a smooth function of mole % of the isotopic species; simultaneous oscillation of both systems was observed over a fairly wide concentration range. The intensity of an N₂O laser was studied under identical conditions over the range 95 –1.1 mole % of ¹⁴N¹⁵NO. The integrated intensity was observed to oscillate erratically with varying percentage of ¹⁴N¹⁵NO. Laser action was not a smooth function of species concentration.

Select this Article		CHANNELING STUDY OF BORON‐IMPLANTED SILICON J. C. North and W. M. Gibson Appl. Phys. Lett. 16, 126 (1970); http://dx.doi.org/10.1063/1.1653123 (4 pages) \| Cited 85 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The channeling technique has been used to determine the lattice location of boron implanted into silicon by using the B¹¹ (p,α) nuclear reaction. Approximately 30% of the boron lies on substitutional sites after a room‐temperature implantation of 3×10¹⁵∕cm². The substitutional content decreases with annealing temperature up to 700 °C and then increases at higher annealing temperature. This explains a reverse annealing behavior observed in the carrier concentration. Nearly all of the boron lies on substitutional sites after annealing at 1100 °C. The nonsubstitutional boron atoms do not occupy the normal tetrahedral interstitial sites. For annealing temperatures up to 500 °C they appear to lie along <110> atomic rows, but they do not lie midway between <110> row lattice sites. After higher‐temperature annealing their location appears less well‐defined.

Select this Article		SPIN‐LONGITUDINAL AND SPIN‐SHEAR ELASTIC WAVE CONVERSION IN AN AXIALLY MAGNETIZED YIG ROD F. R. Morgenthaler, S. M. Rezende, H. L. Hu, and A. Platzker Appl. Phys. Lett. 16, 133 (1970); http://dx.doi.org/10.1063/1.1653126 (3 pages) \| Cited 3 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract We report the first successful conversion of z‐directed spin waves to longitudinal elastic waves (and vice versa) in an axially magnetized (z axis) single‐crystal YIG rod. The conversions — carried out at L‐band frequencies and room temperature — were possible because the symmetry axis of the rod was not along a principal crystallographic direction; the axis was chosen to be in a {100} plane at an angle of 22.5° with respect to a <100> direction in order to provide nearly maximum spin‐longitudinal elastic wave coupling.

Select this Article		HIGHER ELECTRIC FIELDS FOR STARK‐INDUCED INFRARED SPECTRA W. J. Boyd, P. J. Brannon, and N. M. Gailar Appl. Phys. Lett. 16, 135 (1970); http://dx.doi.org/10.1063/1.1653127 (3 pages) \| Cited 5 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A Stark cell to study the normally inactive infrared spectrum of homonuclear diatomic molecules has been built. This cell utilizes parallel metal plates to apply high electric fields across the sample gas. Fields of 240 000 V∕cm in H₂ and 350 000 V∕cm in N₂ have been achieved at 400 psi using the new cell. The electric‐field‐induced pure rotation infrared spectra of H₂ was observed. The frequencies of the S₀(2), and S₀(3) pure rotation lines were measured, and the molecular constants B₀, D₀, and H₂ were calculated from these data.

Select this Article		SHORT‐RANGE ORDER IN AMORPHOUS GeTe FILMS D. B. Dove, M. B. Heritage, K. L. Chopra, and S. K. Bahl Appl. Phys. Lett. 16, 138 (1970); http://dx.doi.org/10.1063/1.1653128 (3 pages) \| Cited 23 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Thin films of amorphous (stoichiometric) GeTe have been examined by direct recording of electron diffraction, and intensity profiles across the diffuse diffraction pattern have been recorded with electrostatic rejection of inelastically scattered electrons. Radial distribution analysis of these curves shows that the local order is not characteristic of the distorted rocksalt structure of bulk GeTe, i.e., nearest‐neighbor distance of 2.99 Å and nearest‐neighbor coordination of 6. Instead it is found that the nearest‐neighbor distance is 2.65 Å with coordination of approximately 4. This result is of significance for the interpretation of the electronic properties of amorphous films.

Select this Article		ULTRAFAST RISE TIME LASER‐INDUCED STRESS WAVES P. S. Peercy, E. D. Jones, J. C. Bushnell, and G. W. Gobeli Appl. Phys. Lett. 16, 120 (1970); http://dx.doi.org/10.1063/1.1653120 (3 pages) \| Cited 16 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Stress pulses having rise times ≲1 nsec have been produced at the surfaces of solids. These were produced by the absorption of single laser pulses of time durations of ∼ 3 psec and energies up to 20 J.

Select this Article		NONRESONANT ABSORPTION OF ELECTROMAGNETIC WAVES IN A HIGH‐DENSITY PLASMA G. Lisitano, M. Fontanesi, and E. Sindoni Appl. Phys. Lett. 16, 122 (1970); http://dx.doi.org/10.1063/1.1653121 (3 pages) \| Cited 56 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract Efficient radio frequency (rf) heating of a high‐density plasma is obtained for any value of the containing magnetostatic field larger than that corresponding to electron cyclotron resonance.

Select this Article		SPONTANEOUS SINGLE‐FREQUENCY OUTPUT FROM A SPATIALLY HOMOGENEOUS Nd:YAG LASER H. G. Danielmeyer and W. G. Nilsen Appl. Phys. Lett. 16, 124 (1970); http://dx.doi.org/10.1063/1.1653122 (3 pages) \| Cited 14 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract By moving a Nd:YAG rod relative to the cavity field with velocities of the order of centimeters per second, we obtained single‐frequency oscillation close to the center of the gain curve with output powers up to 1.2 W. Our results can be understood quantitatively by considering the smoothing effect of the relative motion on the spatial distribution of the population inversion.

Select this Article		ABSORPTION PROFILES AND INVERTED LAMB DIPS OF I₂ VAPOR AT 633 nm AS STUDIED WITH A He☒Ne LASER J. D. Knox and Yoh‐Han Pao Appl. Phys. Lett. 16, 129 (1970); http://dx.doi.org/10.1063/1.1653124 (3 pages) \| Cited 12 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract The rotational‐vibrational structure of the B³Πog+←X′Σou+ electronic transitions in I₂¹²⁷ and I₂¹²⁹ vapors have been examined in detail over a spectral range of 2000 MHz in the 633‐nm region using He³☒Ne²⁰ and He³☒Ne²² lasers. In addition, the hyperfine components of the Lamb dips in these two vapors have been observed. Due to the increased absorption, the inverted Lamb dips are easily observed in I₂¹²⁹.

Select this Article		DIVACANCY MOTION ENERGY IN GOLD J. J. Burton and D. Lazarus Appl. Phys. Lett. 16, 131 (1970); http://dx.doi.org/10.1063/1.1653125 (2 pages) \| Cited 1 time Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A new resistance measuring technique has been used to study the annealing of quenched gold. The technique gives continuous data and makes it possible to obtain both an instantaneous and an apparent annealing activation energy. The instantaneous activation energy is 0.52 ± 0.03 eV. This is identified as the motion energy of the divacancy in gold.

Select this Article		HIGH‐SPEED SPECTROSCOPY USING THE INVERSE RAMAN EFFECT R. A. McLaren and B. P. Stoicheff Appl. Phys. Lett. 16, 140 (1970); http://dx.doi.org/10.1063/1.1653129 (3 pages) \| Cited 14 times Online Publication Date: 21 October 2003 Full Text: \| Download PDF
	+ -	Show Abstract A method of obtaining inverse Raman spectra over the range of frequency shifts ∼ 300–3500 cm⁻¹ in liquids and solids in a time of ∼ 40 nsec is described. The stimulating monochromatic radiation at 6940 Å is provided by a giant‐pulse ruby laser; the background continuum is the short‐lived spontaneous fluorescence of rhodamine B or 6G excited by second‐harmonic radiation (3470 Å) produced in KDP from a small part of the main laser beam, thus ensuring simultaneous irradiation of the sample by both beams.