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1 May 1970

Volume 16, Issue 9, pp. 331-372


VELOCITY MEASUREMENTS OF ELASTIC SURFACE WAVES IN THE LAYERED SYSTEM ZnS ON Al2O3

M. R. Daniel and J. de Klerk

Appl. Phys. Lett. 16, 331 (1970); http://dx.doi.org/10.1063/1.1653214 (2 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Elastic surface waves have been generated and propagated in thin ZnS films on single crystals of Al2O3. Measurements of surface waves on these films have revealed a dispersive behavior in the velocity of propagation. At frequencies when the film thickness is greater than the wavelength, the surface wave velocity approaches 95% of the bulk shear velocity in ZnS. At lower frequencies, the velocity increases towards the bulk shear velocity in the Al2O3 substrate material.

SUPERCONDUCTING Nb TM010 MODE ELECTRON‐BEAM WELDED CAVITIES

J. P. Turneaure and Nguyen Tuong Viet

Appl. Phys. Lett. 16, 333 (1970); http://dx.doi.org/10.1063/1.1653215 (3 pages) | Cited 30 times

Online Publication Date: 21 October 2003

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Several superconducting TM010 mode Nb cavities at 8.6 GHz with high measured unloaded Q's and fields were made using commercial reactor‐grade Nb, practical fabrication techniques, and practical processing techniques. The cavities were fabricated by machining the cavities in two parts from a solid billet of Nb and then joining the two parts with electron‐beam welding. The cavities were processed primarily by using ultra‐high‐vacuum firing (1750–2100 °C) and chemical polishing. Unloaded Q's as high as 1011 were measured at low field levels, and surface fields as high as 1080 Oe and 70 MV∕m were obtained with unloaded Q's on the order of 1010.

n‐p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENT

A. G. Foyt, W. T. Lindley, and J. P. Donnelly

Appl. Phys. Lett. 16, 335 (1970); http://dx.doi.org/10.1063/1.1653216 (3 pages) | Cited 27 times

Online Publication Date: 21 October 2003

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We have fabricated n‐p junction photovoltaic detectors in InSb using proton bombardment to create the n‐type layer. At 77 °K, diodes which were 20 mils in diameter had zero‐bias resistances of several hundred thousand ohms. The peak detectivity at 4.9 μ of these diodes with a 2π, 300 °K background was typically greater than 3×1010 cm Hz1∕2∕W with the largest value observed being 1011 cm Hz1∕2∕W. Diode quantum efficiencies near 35% were observed.

ONE‐WATT AVERAGE SECOND HARMONIC POWER WITH A REPETITIVELY Q‐SWITCHED Nd: YAG LASER

Alexander Stein and Robert A. Kaplan

Appl. Phys. Lett. 16, 338 (1970); http://dx.doi.org/10.1063/1.1653217 (4 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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A repetitively Q‐switched Nd: YAG laser has been operated with an intracavity second harmonic generator to produce 1‐W average power at 0.53 μ. The output coupling optimization of this system has been determined from a simplified model and the results of a computer solution are presented, and compared with the optimization condition for the cw mode of operation. Finally, the dependence of the average output power for the Q‐switched mode of operation on the pulse rate is calculated and compared with experimental data.

RED‐ORANGE PHOTOLUMINESCENCE IN TiO2: W

R. B. Lauer and Amal K. Ghosh

Appl. Phys. Lett. 16, 341 (1970); http://dx.doi.org/10.1063/1.1653218 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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A red‐orange photoluminescence emission band which peaks at approximately 2.02 eV was found in TiO2: W. The excitation and emission spectra for this band are presented. The previously reported 1.46‐eV photoluminescence emission band which was attributed to interstitial Ti3+ ions is found to be quenched in the presence of tungsten. This result is interpreted in terms of the reduction of interstitial Ti3+ ions in the presence of tungsten. The 2.02‐eV band is tentatively identified as an electron transition from states at or just below the conduction‐band edge to an acceptorlike level approximately 1 eV above the edge of the valence band.

ELASTIC WAVE GENERATION BY A GUNN EFFECT OSCILLATOR COUPLED TO A PIEZOELECTRIC

R. E. Lee and R. M. White

Appl. Phys. Lett. 16, 343 (1970); http://dx.doi.org/10.1063/1.1653219 (4 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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In a Gunn effect oscillator operating in the transit‐time mode, domains of high electric field are formed periodically and travel through the device. When such an oscillator is placed close to the surface of a piezoelectric solid the moving high‐field domains produce moving local stress concentrations in the piezoelectric, causing the radiation of elastic waves into the body of the piezoelectric and along its surface. The domain velocity is much higher than the elastic wave velocities, so the situation is similar to that of Cherenkov radiation, and the waves are emitted at a large angle to the direction of domain motion. Results are given on the generation of bulk and surface waves at a fundamental frequency of 114 MHz in a lithium niobate crystal coupled to a gallium arsenide Gunn effect oscillator.

ANNEALING OF LIFETIME DAMAGE IN NEUTRON‐IRRADIATED SILICON

H. Kawamoto and W. G. Oldham

Appl. Phys. Lett. 16, 346 (1970); http://dx.doi.org/10.1063/1.1653220 (3 pages)

Online Publication Date: 21 October 2003

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A gated p‐n junction diode has been used to study the effects of neutron damage on the various lifetime parameters in silicon. Isochronal annealing of heavily irradiated devices leads to the observation of two annealing stages: one in the 150–250°C range corresponding to the previously reported divacancy anneal, and the other in the 300–400°C range corresponding to the anneal of oxygen associated defects. The diffusion current, the space‐charge generation current, and the space‐charge recombination current show similar annealing behavior, suggesting that the damage complexes in the space‐charge region are essentially of the same nature as those in the neutral bulk region.

HIGH‐SENSITIVITY ELECTRON SPECTROMETER

D. A. Huchital and J. Dane Rigden

Appl. Phys. Lett. 16, 348 (1970); http://dx.doi.org/10.1063/1.1653221 (4 pages) | Cited 25 times

Online Publication Date: 21 October 2003

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A new type of retarding potential difference electron spectrometer using spherical grids is described. The unique feature of the analyzer is a post monochromator section which selectively collects electrons passing the retarding grids with minimum kinetic energy. Factors affecting the resolution of the analyzer are discussed and a comparison with several other spectrometers operating in the resolution range of 0.05% is presented. An application to x‐ray photoelectron spectroscopy is presented.

HIGH‐RESOLUTION INFRARED SPECTROSCOPY WITH A TUNABLE DIODE LASER

E. D. Hinkley

Appl. Phys. Lett. 16, 351 (1970); http://dx.doi.org/10.1063/1.1653222 (4 pages) | Cited 49 times

Online Publication Date: 21 October 2003

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A current‐tunable Pb0.88Sn0.12 Te diode laser was used to obtain the absorption spectrum of SF6 near the P(16) and P(20) CO2 laser lines at 10.6μm by both direct and heterodyne techniques. Because of its narrow linewidth, the diode laser can perform high‐resolution spectroscopy beyond the limits of conventional instruments moreover, its infrared frequency can be tuned continuously over a range much greater than attainable with a gas laser.

ZnO LASER BY ELECTRON BEAM EXCITATION

Sohachi Iwai and Susumu Namba

Appl. Phys. Lett. 16, 354 (1970); http://dx.doi.org/10.1063/1.1653223 (3 pages) | Cited 19 times

Online Publication Date: 21 October 2003

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The wavelength of laser emission from an electron‐beam‐pumped ZnO was measured in the temperature range from 82 to 250°K. The laser emission occurred near the line due to the annihilation of a free exciton assisted by one LO phonon at 82°K. Above 180°K the laser emission occurred near the line due to the transition assisted by two LO phonons. From 130 to 170°K the laser oscillation appeared in two spectral lines. The temperature dependence of threshold current density measured from 82 to 250°K was weak compared with the theoretical curve based on the laser action involving the A‐LO line.

CdSnP2 EMISSION AND DETECTION OF NEAR‐INFRARED RADIATION

J. L. Shay, R. F. Leheny, E. Buehler, and J. Wernick

Appl. Phys. Lett. 16, 357 (1970); http://dx.doi.org/10.1063/1.1653224 (3 pages) | Cited 13 times

Online Publication Date: 21 October 2003

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The spectral dependence of the photoluminescence and the time decay of the cathodoluminescence are reported for CdSnP2 single crystals for 1.7 <T<300°K. We find that the room‐temperature band gap lies very close to the 1.06μ Nd:YAG laser emission indicating that CdSnP2 may be useful as a room‐temperature detector or for other optical devices such as limiters or passive Q‐switchers. We report photoconductivity and photovoltage measurements which support these suggestions.

AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE

H. Kressel, E. S. Kohn, H. Nelson, J. J. Tietjen, and L. R. Weisberg

Appl. Phys. Lett. 16, 359 (1970); http://dx.doi.org/10.1063/1.1653225 (4 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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An efficient optoelectronic cold cathode has been made which includes a Si‐compensated AlxGa1−xAs electroluminescent diode covered with an absorbing p‐type GaAs layer having a negative electron affinity surface. This structure is designed to minimize current crowding in the vicinity of the Ohmic contact. An over‐all efficiency of 1.1×10−3 (current emitted into vacuum∕diode current) has been achieved. This represents a factor of 102–103 improvement over previous p‐n junction or optically coupled cold cathode structures.

THERMALLY SELF‐INDUCED PHASE MODULATION OF LASER BEAMS

F. W. Dabby, T. K. Gustafson, J. R. Whinnery, Y. Kohanzadeh, and P. L. Kelley

Appl. Phys. Lett. 16, 362 (1970); http://dx.doi.org/10.1063/1.1653226 (4 pages) | Cited 57 times

Online Publication Date: 21 October 2003

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Self‐phase modulation of laser beams by media which possess a temperature‐dependent refractive index gives rise to far‐field aberrational rings. Steady‐state aberration profiles were measured and quantitative agreement with theory was obtained. A simple qualitative explanation of the ring structure is given. A self‐induced frequency modulation of 1.5‐W argon laser pulses was also observed and chirping detected.

ELECTRONIC TRANSPORT PROPERTIES IN THE SEMICONDUCTOR ALLOY (GaP)0.95(ZnSe)0.05

M. Glicksman, D. Gutman, and W. M. Yim

Appl. Phys. Lett. 16, 366 (1970); http://dx.doi.org/10.1063/1.1653227 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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The first measurements of electron transport in n‐type alloys of GaP with 5% ZnSe show evidence for strong ionized impurity scattering at room temperature in the temperature dependence of the mobility. However, this scattering requires only about 10% of the Zn and Se atoms to be charged centers, and thus suggests that most of the ZnSe present contributes weakly (perhaps as dipole centers) to the scattering. Hall mobilities of 0.23 cm2∕V sec at 77°K and 6.2 cm2∕V sec at 300°K were measured.

Q‐SWITCHING OF N2O AND CO2 LASERS BY STARK EFFECT OF AMMONIA

Fujio Shimizu

Appl. Phys. Lett. 16, 368 (1970); http://dx.doi.org/10.1063/1.1653228 (3 pages) | Cited 10 times

Online Publication Date: 21 October 2003

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Q‐switching of three lines of N2O and CO2 10μ lasers has been achieved by the Stark effect of ammonia.

LONG‐WAVELENGTH THRESHOLD OF Cs2O‐COATED PHOTOEMITTERS

L. W. James and J. J. Uebbing

Appl. Phys. Lett. 16, 370 (1970); http://dx.doi.org/10.1063/1.1653229 (3 pages) | Cited 17 times

Online Publication Date: 21 October 2003

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While Cs2O‐coated III‐V semiconductors can have Kelvin work functions as low as 0.7 eV, the long‐wavelength threshold for efficient photoemission is determined by a significantly higher barrier at the heterojunction between the Cs2O and the semiconductor. This barrier is 1.23±0.03 eV for Cs2O on GaSb. For Cs2O on silver, the barrier height is 1.0 eV.
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ERRATUM: RELATIVE SIGNS OF NONLINEAR OPTICAL COEFFICIENTS OF POLAR CRYSTALS

Appl. Phys. Lett. 16, 372 (1970); http://dx.doi.org/10.1063/1.1653230 (1 page)

Online Publication Date: 21 October 2003

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