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1 Jul 1970

Volume 17, Issue 1, pp. 1-47


TRANSPORT PROPERTIES OF HgCr2Se4 AT FERROMAGNETIC RESONANCE

Minoru Toda

Appl. Phys. Lett. 17, 1 (1970); http://dx.doi.org/10.1063/1.1653231 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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Two new effects have been observed in the transport properties of In‐doped HgCr2Se4 at ferromagnetic resonance at 77°K. One is a dc voltage produced in the sample, and the other is a decrease in resistivity. These effects are believed to result from s‐d exchange interactions.

PHOTOEMISSION STUDIES OF INTERFACE BARRIER ENERGIES OF IRRADIATED MOS STRUCTURES

J. L. Peel, R. A. Kjar, and R. C. Eden

Appl. Phys. Lett. 17, 3 (1970); http://dx.doi.org/10.1063/1.1653240 (3 pages) | Cited 7 times

Online Publication Date: 21 October 2003

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The effects of ionizing radiation in large geometry MOS structures were studied by use of internal photoemission techniques. Barrier heights at both the silicon‐silicon dioxide and the silicon dioxide‐metal (chromium) interface were measured before and after irradiation in a Co60 gamma cell. It was determined that the measured barrier energy heights were considerably reduced by radiation‐induced oxide charge.

ENERGY DEPENDENCE OF CASCADE CLUSTER FORMATION IN GOLD

K. L. Merkle, L. R. Singer, and J. R. Wrobel

Appl. Phys. Lett. 17, 6 (1970); http://dx.doi.org/10.1063/1.1653249 (2 pages) | Cited 16 times

Online Publication Date: 21 October 2003

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Not every xenon ion of E < 50 keV produces a defect cluster visible by transmission electron microscopy. The recently reported larger yields in heavy ion bombardment of gold are probably due to the additional damage produced by neutral particles. At E > 50 keV a one‐to‐one correspondence between number of incident ions and defect bunches is observed.

IMPROVED COUPLING TO INFRARED WHISKER DIODES BY USE OF ANTENNA THEORY

L. M. Matarrese and K. M. Evenson

Appl. Phys. Lett. 17, 8 (1970); http://dx.doi.org/10.1063/1.1653250 (3 pages) | Cited 86 times

Online Publication Date: 21 October 2003

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It is shown that the dependence of the output of a whisker diode on its orientation in the polarized beam of an infrared laser can be explained on the basis of simple long‐wire antenna theory. Outstanding improvements in coupling the diode to the radiation field can result when this fact is utilized in applications.

HELIUM‐CADMIUM LASER PARAMETERS

D. T. Hodges

Appl. Phys. Lett. 17, 11 (1970); http://dx.doi.org/10.1063/1.1653232 (3 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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See Also: Erratum

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Population densities and lifetimes have been obtained for the 5p 2P1∕2,3∕2, 5s2 2D3∕2,5∕2, and 6s 2S1∕2 levels of Cd II in a typical helium‐cadmium laser discharge. These results show that there is no population inversion for the lines at 3536, 2749, and 2573 Å, previously thought to be possible laser transitions. The maximum available laser power is also estimated from these results for the cw laser transitions at 4416 and 3250 Å.

DIRECT DEMONSTRATION OF PICOSECOND‐PULSE FREQUENCY SWEEP

E. B. Treacy

Appl. Phys. Lett. 17, 14 (1970); http://dx.doi.org/10.1063/1.1653233 (3 pages) | Cited 20 times

Online Publication Date: 21 October 2003

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A direct measurement using time‐resolved spectroscopy with response times in the picosecond regime shows that wave groups of different frequencies within an ultrashort pulse generated by a Nd‐glass mode‐locked laser arrive at a given point at different times. A curve depicting wavelength versus arrival time for a typical pulse is constructed. The frequency sweep is nonlinear and positive across the most intense portion of the spectrum.

ENERGY DEPENDENCE OF ELECTRICAL PROPERTIES OF INTERFACE STATES IN Si☒SiO2 INTERFACES

W. Fahrner and A. Goetzberger

Appl. Phys. Lett. 17, 16 (1970); http://dx.doi.org/10.1063/1.1653234 (3 pages) | Cited 24 times

Online Publication Date: 21 October 2003

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Measurements of the energy dependence of surface‐state density, capture cross section, and frequency dispersion were undertaken with the MOS conductance technique. Capture cross sections are constant in the depletion range and decrease exponentially towards the band edge. The frequency dispersion factor is independent of surface potential for wet oxide and becomes very small at the flatband point for dry oxides.

HALL‐EFFECT MEASUREMENTS ON INDIUM‐IMPLANTED SILICON

P. Bergamini, G. Fabri, and F. Pandarese

Appl. Phys. Lett. 17, 18 (1970); http://dx.doi.org/10.1063/1.1653235 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Ion implantation of indium in silicon has been studied at 30 keV both in random and in channeling conditions. Implantations were performed at room temperature with doses ranging from 1×1012 to 1×1015 ions∕cm2; surface carrier concentration versus anneal temperature curves were obtained and compared with the behavior of other group III elements. The anneal behavior of the above‐mentioned implants after anneal at 700°C and subsequent tin implantation is also discussed.

PROPAGATION OF HIGH‐VOLTAGE STREAMERS ALONG LASER‐INDUCED IONIZATION TRAILS

J. R. Vaill, D. A. Tidman, T. D. Wilkerson, and D. W. Koopman

Appl. Phys. Lett. 17, 20 (1970); http://dx.doi.org/10.1063/1.1653236 (3 pages) | Cited 15 times

Online Publication Date: 21 October 2003

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The channeling and guidance of an electrical breakdown streamer via a laser‐induced ionization trail is discussed, and preliminary experiments demonstrating this phenomenon are reported.

A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION‐SCATTERING TECHNIQUE

S. Chou, L. A. Davidson, and J. F. Gibbons

Appl. Phys. Lett. 17, 23 (1970); http://dx.doi.org/10.1063/1.1653237 (4 pages) | Cited 20 times

Online Publication Date: 21 October 2003

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By bombarding samples with 1.1‐MeV 4He+ ions and observing the energy spectra of the backscattered ions, it has been possible to determine the concentrations and lattice locations of arsenic and antimony impurities diffused into silicon. For the samples investigated it was found that only 60–75% of the arsenic atoms were in substitutional sites, even at impurity concentrations well below solid solubility. About 90% of the antimony atoms were found to be in substitutional sites.

LOW‐TEMPERATURE EPITAXY OF β‐SiC BY REACTIVE DEPOSITION

Arthur J. Learn and K. E. Haq

Appl. Phys. Lett. 17, 26 (1970); http://dx.doi.org/10.1063/1.1653238 (4 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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Formation of β‐SiC on SiC by the reactive evaporation or reactive sputtering of Si in C2H2 was investigated. Use of values of relative C2H2:Si impingement rate > 30 avoided unreacted Si in the films. Epitaxial films were obtained on β‐SiC and α‐SiC at temperatures as low as 1100 and 1150°C, respectively. The occurrence of epitaxial temperatures several hundred degrees lower than for deposition by chemical vapor deposition is discussed in terms of deposition rate. Junction properties were observed for n‐type β‐SiC deposits on p‐type SiC.

TIME‐RESOLVED TEMPERATURE MEASUREMENTS IN THE PULSED ARGON ION LASER

M. B. Klein

Appl. Phys. Lett. 17, 29 (1970); http://dx.doi.org/10.1063/1.1653239 (4 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Time‐resolved measurements of the ion and electron temperature in a pulsed ion laser discharge are reported. The data were obtained from spontaneous emission linewidths observed from the end and from the side of the discharge. Significant heating of both ions and electrons during the current pulse was observed. This heating and the resultant decrease in radiation trapping provide a likely explanation for the time behavior of the laser output.

EFFECTIVE DEBYE TEMPERATURE OF PRECIPITATED CARBIDES

Z. Mathalone, M. Ron, and H. Shechter

Appl. Phys. Lett. 17, 32 (1970); http://dx.doi.org/10.1063/1.1653241 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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An effective Debye temperature Θ of carbides extracted from a tempered steel was determined through the Mössbauer effect. The f factor and Θ increase with tempering temperature, following a reduction of carbon content of the carbides and changes in the elastic properties. The phase transformation at Tc is followed by a discontinuity in the magnitude of the center shift and in ∂(δE∕E)∕∂T.

DISPERSIVE PROPERTIES OF THE FUNDAMENTAL RAYLEIGH WAVE MODE (M11) IN A HETEROEPITAXIAL ZINC OXIDE FILM ON A SAPPHIRE SUBSTRATE

T. C. Lim, E. A. Kraut, and B. R. Tittmann

Appl. Phys. Lett. 17, 34 (1970); http://dx.doi.org/10.1063/1.1653242 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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The dispersion characteristics of an anisotropic ZnO layer on an anisotropic sapphire substrate have been calculated for the fundamental Rayleigh mode. A typical example of the group delay as a function of frequency is illustrated. The time‐bandwidth products for the linear regions of the group delay‐frequency curves are tabulated. For the cases studied, it has been found that using the basal plane of ZnO on y‐cut sapphire with propagation direction at right angles to the trigonal axis of sapphire yields the largest time‐bandwidth product (902∕in. for a layer thickness of 4μm).

SPONTANEOUS GIANT PULSING IN A RUBY LASER WITH ONE OUTPUT BEAM REFLECTED BACK INTO THE CAVITY

J. A. Carruthers and G. W. Coutts

Appl. Phys. Lett. 17, 36 (1970); http://dx.doi.org/10.1063/1.1653243 (3 pages)

Online Publication Date: 21 October 2003

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Giant pulses have been observed in a ruby ring laser when one of the output beams is reflected directly back into the laser. The threshold for lasing action does not change when the beam is reflected back, but the output is increased to about 1 J with most of the energy in a few pulses of megawatt power level and 50–100 nsec duration.

VISIBLE LASER ACTION IN FLUORINE I

M. A. Kovacs and C. J. Ultee

Appl. Phys. Lett. 17, 39 (1970); http://dx.doi.org/10.1063/1.1653244 (2 pages) | Cited 19 times

Online Publication Date: 21 October 2003

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Pulsed laser oscillation in atomic fluorine at 7039, 7129, and 7024 Å (vacuum) has been observed and identified as belonging to the 3p 2P – 2s2P transitions in fluorine I. Emission originates from an electrically pulsed CF4, C2F6, or SF6 and helium mixture with pressure of 0.1 and 5 Torr, respectively. Optical pulse duration is 1–2μsec with a peak power in all three lines of 150 W. Laser action takes place in a 4‐m cavity with active discharge lengths from 1 to 3 m.

FREQUENCY STABILIZATION OF A GAS LASER USING THE MAGNETIC LAMB DIP

A. Le Floch, P. Frère, and P. Brun

Appl. Phys. Lett. 17, 40 (1970); http://dx.doi.org/10.1063/1.1653245 (3 pages) | Cited 7 times

Online Publication Date: 21 October 2003

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The study of the nonlinear effects occuring in the output intensity of a Zeeman laser which exhibits x‐y type loss anisotropy provides a method for stabilizing the laser frequency with the magnetic Lamb dip. The modulation of the magnetic field produces the discriminant for a feedback loop. The stabilized frequency may be tuned in a controlled way.

SPONTANEOUS AND STIMULATED CARRIER LIFETIME AND THE SPECTRAL OUTPUT OF CdSe (77°K)

D. L. Keune, N. Holonyak, P. D. Dapkus, and R. D. Burnham

Appl. Phys. Lett. 17, 42 (1970); http://dx.doi.org/10.1063/1.1653246 (4 pages) | Cited 21 times

Online Publication Date: 21 October 2003

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Carrier lifetimes in thin (1–2μm) CdSe (77°K) photo‐excited platelet lasers measured by a mode‐locked laser excitation and phase‐shift technique are found to vary from τ=1.5×10−8 sec for spontaneous recombination to τ=3.3×10−10 sec for high‐level stimulated recombination. High‐level photopumping (n>1018 cm−3) causes platelet laser oscillations to shift to longer wavelengths. This shift, which is observed to be as large as 20 meV, is attributed to many‐particle interactions.

PICOSECOND PULSE MEASUREMENT EMPLOYING THE NONLINEAR PHOTOELECTRIC EFFECT

David C. Burnham

Appl. Phys. Lett. 17, 45 (1970); http://dx.doi.org/10.1063/1.1653247 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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The nonlinear photoelectric effect is used to measured picosecond light pulses by means of a two‐beam overlap technique. A biaklkali image orthicon exhibiting three‐photon response is used to study the output of a diffraction‐limited mode‐locked Nd+++ glass laser. Very short time resolution (10−14 sec) is obtained in a single‐shot technique.
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ERRATUM: RESONANT AMPLIFICATION AND COUPLING OF ACOUSTIC SURFACE WAVES WITH ELECTRONS DRIFTING ACROSS A MAGNETIC FIELD

Abraham Bers and B. E. Burke

Appl. Phys. Lett. 17, 47 (1970); http://dx.doi.org/10.1063/1.1653248 (1 page) | Cited 2 times

Online Publication Date: 21 October 2003

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