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15 Nov 1970

Volume 17, Issue 10, pp. 415-464


FLUX‐FLOW NOISE SPECTRUM IN TYPE II SUPERCONDUCTORS

S. W. Shen

Appl. Phys. Lett. 17, 415 (1970); http://dx.doi.org/10.1063/1.1653251 (2 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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This letter gives experimental verification of Burgess' theory of the flux‐flow noise spectrum in Type II superconductors. The measurements made on vanadium foil biased in linear V‐I region shows quantative agreement with the modified theory.

IMAGE STORAGE AND OPTICAL READOUT IN A ZnS DEVICE

D. S. Oliver, P. Vohl, R. E. Aldrich, M. E. Behrndt, W. R. Buchan, R. C. Ellis, J. E. Genthe, J. R. Goff, S. L. Hou, and G. McDaniel

Appl. Phys. Lett. 17, 416 (1970); http://dx.doi.org/10.1063/1.1653252 (3 pages) | Cited 8 times

Online Publication Date: 21 October 2003

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The operation of an image storage panel, which is read in by means of optical absorption and read out in visible light by means of the Pockels electro‐optic effect, has been demonstrated. The sensing, storing, and readout medium consists of a single‐crystal film of cubic ZnS coated with a blocking contact. Performance characteristics observed to date on devices with areas between 1 and 2 cm2 are resolution of 85 line pairs∕mm, continuous visible readout for 1 h, and image storage for up to 100 h. The readin sensitivity to achieve a 2:1 contrast ratio in readout is 20 erg∕cm2.

OPTICAL EXCITATION OF HIGH‐AMPLITUDE SURFACE WAVES

G. Cachier

Appl. Phys. Lett. 17, 419 (1970); http://dx.doi.org/10.1063/1.1653253 (3 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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A new scheme for optically exciting high‐amplitude Rayleigh waves is described. The interference of two high‐power laser beams on a metallic surface produces periodic heating and a Rayleigh wave. The surface motions diffract the two laser beams, and ID∝IL3. These surface motions were as high as 200 Å at 30 MHz. Rayleigh waves have also been observed at 800 MHz, using a modulated laser for excitation.

STORED CHARGE EFFECTS ON ELECTRON DOSE‐DEPTH PROFILES IN INSULATORS

L. A. Harrah

Appl. Phys. Lett. 17, 421 (1970); http://dx.doi.org/10.1063/1.1653254 (3 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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The dose‐depth profiles for electrons extracted from a pulsed electron beam machine have been studied using a castable radiation‐sensitive plastic. These profiles exhibit a pronounced range shortening at charge fluences greater than 0.5 μC∕cm2 which reaches a limiting value, corresponding to a limiting internal field, at fluences greater than 1 μC∕cm2. This behavior is interpreted in terms of charge build‐up and relaxation by radiation‐induced conductivity in the host material, poly(vinyl toluene). Positive charge‐trapping additives reduce this conductivity and allow the internal field to build up at lower charge fluences. The ratio of radiation‐induced conductivity to dose rate derived from these measurements 1.6 × 10−18 sec∕Ω‐cm rad compares favorably with the value found at low dose by direct measurement of 3.0 × 10−18 sec∕Ω‐cm rad.

RADIATION LOSSES IN GLASS OPTICAL WAVEGUIDES

F. P. Kapron, D. B. Keck, and R. D. Maurer

Appl. Phys. Lett. 17, 423 (1970); http://dx.doi.org/10.1063/1.1653255 (3 pages) | Cited 92 times

Online Publication Date: 21 October 2003

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Measurements show that single‐mode waveguides can be constructed which have radiation losses of about 7 dB∕km—very close to the intrinsic material scattering loss. These waveguides, with total losses between 60 and 70 dB∕km, have permitted the measurement of bending losses which become dominant at radii of curvature of a few centimeters. An approximate theory based on bending a rectangular guide appears to represent the circular waveguide results very well.

IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN p‐TYPE SILICON

P. H. Fang, H. Tarko, P. J. Drevinsky, and P. Iles

Appl. Phys. Lett. 17, 426 (1970); http://dx.doi.org/10.1063/1.1653256 (2 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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A study of p‐type silicon shows that (1) the annealing temperature of electron‐irradiation damage increases as the acceptor concentration increases and (2) the isochronal annealing behavior of damage in samples with gallium and aluminum impurities is different from that in boron‐containing samples, which show a higher annealing temperature.

HIGH‐RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n‐GaAs

J. E. Eberhardt, R. D. Ryan, and A. J. Tavendale

Appl. Phys. Lett. 17, 427 (1970); http://dx.doi.org/10.1063/1.1653257 (3 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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Surface barrier p‐n junction diodes made from high‐purity n‐GaAs grown by liquid‐phase epitaxy, have been operated as α‐particle and low‐energy γ‐ray detectors over the range 77–373°K. Resolutions observed were 1.2 and 2.95 keV (FWHM) at 130 and 295°K, respectively, for 122‐keV γ rays and 30 keV for 5.47‐MeV α particles. The energy per electron hole pair for α particles is 4.51 eV and the Fano factor for γ rays is ≤0.24 at 130°K.

STIMULATED EMISSION IN In1 ‐xGaxP

R. D. Burnham, N. Holonyak, D. L. Keune, D. R. Scifres, and P. D. Dapkus

Appl. Phys. Lett. 17, 430 (1970); http://dx.doi.org/10.1063/1.1653258 (3 pages) | Cited 23 times

Online Publication Date: 21 October 2003

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By a modified Bridgman solution‐growth technique employing a small temperature gradient. InP and GaP source crystal are used to saturate an In solution at ∼ 925°C and grow In1−xGaxP (x ∼ 0.3) at ∼ 925°C. This material is shown to exhibit stimulated emission.

CADMIUM TELLURIDE SURFACE BARRIER DETECTORS

A. Cornet, P. Siffert, A. Coche, and R. Triboulet

Appl. Phys. Lett. 17, 432 (1970); http://dx.doi.org/10.1063/1.1653259 (5 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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The pulse height response for α particles incident upon Au n‐type CdTe surface barrier counters has been investigated. The energy required to form an electron‐hole pair in this material, by comparison with the specific energy loss per pair in silicon detectors, was found to be 4.46 eV at 300°K and 4.75 eV at 77°K.

LASER EMISSION NEAR 8 μ FROM A H2☒C2H2☒He MIXTURE

C. F. Shelton and F. T. Byrne

Appl. Phys. Lett. 17, 436 (1970); http://dx.doi.org/10.1063/1.1653260 (2 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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Laser emission on five lines near 8 μ has been obtained from a flowing mixture of H2☒C2H2☒He under pulsed electrical excitation. This emission has been tentatively identified as Q‐branch lines of the 01000Σg+−000011Πu band (v2−v51) of C2H2. Pumping of the C2H2 appears to result from a near‐resonant vibrational energy transfer from H2*(v = 1) which has been excited in a He‐rich discharge.

OBSERVATIONS OF IMPURITY INHOMOGENEITIES IN ARSENIC‐DOPED SILICON BY SCANNING LASER MICROSCOPY

E. D. Jungbluth

Appl. Phys. Lett. 17, 437 (1970); http://dx.doi.org/10.1063/1.1653261 (4 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Optical inhomogeneities in arsenic‐doped silicon have been observed at a near‐infrared wavelength of 3.39 μm with a scanned laser infrared microscope. The inhomogeneous distribution of impurities in the crystal includes segregation striae and a central faceted area. Results are compared with 1.1‐μm infrared microscopy and x‐ray diffraction topography. An interpretation of Tiller's mechanism for dislocation production is shown to be invalid for the case of arsenic‐doped silicon.

ULTRASONIC STIMULATION OF OPTICAL SCATTERING IN NEMATIC LIQUID CRYSTALS

L. W. Kessler and S. P. Sawyer

Appl. Phys. Lett. 17, 440 (1970); http://dx.doi.org/10.1063/1.1653262 (2 pages) | Cited 15 times

Online Publication Date: 21 October 2003

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We report that the application of an ultrasonic compressional wave to a thin layer of nematic liquid crystals results in optical scattering. This effect, which possesses both threshold and gray‐scale properties, is potentially useful for real‐time ultrasonic visualization for nondestructive testing and medical applications.

LOCALIZED MODES AND DIVACANCY ABSORPTION IN OXYGEN ION IMPLANTED Si

H. J. Stein and Wendland Beezhold

Appl. Phys. Lett. 17, 442 (1970); http://dx.doi.org/10.1063/1.1653263 (3 pages) | Cited 17 times

Online Publication Date: 21 October 2003

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Optical absorption bands characteristic of localized vibrational modes for both interstitial and substitutional oxygen have been observed in crystalline Si implanted with 220‐keV oxygen ions at 300°K. In addition, the fluence dependences for the vibrational modes and also for an electronic transition of the divacancy (1.8‐μ band) have been measured. Implanted oxygen ions are found to enhance divacancy formation. This effect was not observed for Sb implantation. The sum of the observed interstitial and substitutional oxygen centers is approximately equal to the number of implanted oxygen ions. An ion fluence 300 times larger than that to detect divacancies was required to detect the vibrational modes of oxygen as expected from the relative production rates and absorption coefficients. At these high fluences the strengths of the vibrational bands increase in magnitude with fluence while the divacancy band decreases. At even higher fluences amorphous layer formation, as indicated by a milky coloration of the surface, caused a decrease in the spacing of optical interference fringes and in the magnitude of the oxygen vibrational bands.

LASER ACTION IN ATOMIC FLUORINE BASED ON COLLISIONAL DISSOCIATION OF HF

W. Q. Jeffers and C. E. Wiswall

Appl. Phys. Lett. 17, 444 (1970); http://dx.doi.org/10.1063/1.1653264 (4 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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This letter reports laser action in the visible (near 7000 Å) and near infrared on transitions of atomic fluorine. The pumping process is dissociative collisions of helium metastable atoms with hydrogen fluoride. Lower levels of the laser transitions are depopulated by both uv radiative transitions and in collision with ground‐state hydrogen atoms.

OPTICAL SECOND HARMONIC GENERATION IN FORM OF COHERENT CERENKOV RADIATION FROM A THIN‐FILM WAVEGUIDE

P. K. Tien, R. Ulrich, and R. J. Martin

Appl. Phys. Lett. 17, 447 (1970); http://dx.doi.org/10.1063/1.1653265 (4 pages) | Cited 105 times

Online Publication Date: 21 October 2003

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We report optical second harmonic generation in form of coherent Cerenkov radiation. The fundamental wave at 1.06 μm propagates in a thin‐film optical waveguide which is simply a ZnS film vacuum‐deposited on a single‐crystal ZnO substrate. The nonlinear polarization excited in the substrate has a phase velocity exceeding that of radiation propagating freely in the substrate material. It thus acts as the source of the observed Cerenkov radiation.

NANOSECOND RESPONSE TIME ROOM‐TEMPERATURE INFRARED DETECTION WITH THIN‐FILM BOLOMETERS

B. Contreras and O. L. Gaddy

Appl. Phys. Lett. 17, 450 (1970); http://dx.doi.org/10.1063/1.1653266 (4 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Properties of thin‐metal‐film bolometer detectors deposited upon high thermal conductivity substrates are described. Measured response time is less than 15 nsec and NEP is found to be less than 10−6 W∕Hz1∕2.

VELOCITY MEASUREMENTS OF SMALL PARTICLES BY PHOTON COUNTING

Henry C. Kelly

Appl. Phys. Lett. 17, 453 (1970); http://dx.doi.org/10.1063/1.1653267 (3 pages)

Online Publication Date: 21 October 2003

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Particles moving with known constant velocities are used to calibrate a photo‐counting apparatus. Velocities from 1 to about 10−5 cm∕sec are measured conveniently.

AlxGa1−xAs1−y′P y′☒GaAs1−yPy HETEROSTRUCTURE LASER AND LAMP JUNCTIONS

R. D. Burnham, N. Holonyak, and D. R. Scifres

Appl. Phys. Lett. 17, 455 (1970); http://dx.doi.org/10.1063/1.1653268 (3 pages) | Cited 17 times

Online Publication Date: 21 October 2003

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A method is described to grow successfully from solution AlxGa1−xAs1−y′P y′ (p‐type) on GaAs1−yPy (n‐type), to preserve the lattice match (y′ ≈ y), and to obtain the improved heterostructure junction devices previously realized only in the AlGaAs∕GaAs system. Although not optimized, these structures have been operated as pulsed room‐temperature lasers, and because of an inherent wide‐gap window can be used conveniently for optical purposes and for excess carrier lifetime measurements. Carrier lifetime measurements, for example, indicate freedom from defects at the AlGaAsP∕GaAsP barrier.

PRE‐PRECIPITATION OF PHOSPHORUS IN HEAVILY DOPED SILICON

E. Biedermann and A. Bohg

Appl. Phys. Lett. 17, 457 (1970); http://dx.doi.org/10.1063/1.1653269 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Presently, silicon device technology phosphorous diffusions with high surface concentrations are commonly used for the formation of the emitter areas. Annealing treatments at or below 800°C have been shown to lead to the formation of extrinsic dislocation loops in such areas. A transmission electron microscopic investigation combined with resistivity measurements and profile determinations leads to the interpretation of these loops as a primary step of phosphorous precipitation in the supersaturated lattice.

CONTINUOUS SERIES OF METASTABLE HEXAGONAL CLOSE‐PACKED SOLID SOLUTIONS IN THE ERBIUM‐ZIRCONIUM SYSTEM

R. Wang

Appl. Phys. Lett. 17, 460 (1970); http://dx.doi.org/10.1063/1.1653270 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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The complete mutual solid solubility of hexagonal close‐packed forms of erbium and zirconium has been observed by x‐ray diffraction for specimens rapidly quenched from the liquid state to room temperature. The lattice parameter measurements show negative deviations from the linearity as expressed by Vegard's law, with maximum deviations ΔV∕V of ≲ 2% at approximately 41 at. % Zr and 2.3% at 70 at. % Zr. The axial ratio c∕a remains as a linear relationship between those of two elements. The formation of the metastable solid solutions can be explained by classical rules.

LASER POWER AT 5 μm FROM THE SUPERSONIC EXPANSION OF CARBON MONOXIDE

Robert L. McKenzie

Appl. Phys. Lett. 17, 462 (1970); http://dx.doi.org/10.1063/1.1653271 (3 pages) | Cited 15 times

Online Publication Date: 21 October 2003

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See Also: Erratum

Show Abstract
Laser radiation at wavelengths between 4.78 and 5.4μm has been obtained from the supersonic expansion of CO in mixtures of N2 and Ar. The ratio of laser power to the total enthalpy flow rate supplied to the nozzle reservoir was equal to or greater than that obtained from similar CO2 gas‐dynamic lasers.
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