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1 Aug 1970

Volume 17, Issue 3, pp. 97-134


SMALL‐AREA HIGH‐CURRENT‐DENSITY GaAs ELECTROLUMINESCENT DIODES AND A METHOD OF OPERATION FOR IMPROVED DEGRADATION CHARACTERISTICS

C. A. Burrus and R. W. Dawson

Appl. Phys. Lett. 17, 97 (1970); http://dx.doi.org/10.1063/1.1653336 (3 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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Diffused‐junction GaAs electroluminescent diodes of small area and high radiance have been fabricated. It has been observed (1) that the degradation of these high‐current‐density cw diodes can be reduced greatly by superimposing a periodic reverse‐bias pulse on the normal dc forward bias, and (2) that a previously degraded diode is restored to its initial light output by the influence of the built‐in junction fields, or an applied dc reverse bias, at an elevated temperature.

MICROWAVE HOLOGRAPHY BY MEANS OF OPTICAL INTERFERENCE HOLOGRAPHY

Keigo Iizuka

Appl. Phys. Lett. 17, 99 (1970); http://dx.doi.org/10.1063/1.1653337 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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A microwave hologram was made by mapping the pattern of the thermal expansion of a resistive surface illuminated by a microwave field. The distribution of the displacement of the surface was mapped making use of optical interference holography techniques. The microwave hologram thus recorded was then photographically reduced in size. This hologram was next illuminated by a laser beam to yield the optical reconstruction of the microwave image.

MEASUREMENT OF VELOCITY‐FIELD CHARACTERISTICS OF ELECTRONS IN InSb AT HIGH FIELDS

A. Neukermans and G. S. Kino

Appl. Phys. Lett. 17, 102 (1970); http://dx.doi.org/10.1063/1.1653323 (3 pages) | Cited 7 times

Online Publication Date: 21 October 2003

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The velocity of electrons in p‐type InSb at 77°K has been measured as a function of the field in the range from 460 to 625 V∕cm, by a time‐of‐flight technique. It is found that this characteristic displays negative differential mobility. The results are in good agreement with a recent theory by Fawcett and Ruch.

SPATIALLY UNIFORM AND ALTERABLE SHG PHASE‐MATCHING TEMPERATURES IN LITHIUM NIOBATE

P. M. Bridenbaugh, J. R. Carruthers, J. M. Dziedzic, and F. R. Nash

Appl. Phys. Lett. 17, 104 (1970); http://dx.doi.org/10.1063/1.1653324 (3 pages) | Cited 22 times

Online Publication Date: 21 October 2003

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By the addition of MgO to a congruent melt, one can obtain x‐axis crystals of lithium niobate several centimeters in length, whose phase‐matching temperature for second harmonic generation (SHG) has been increased appreciably while the spatial uniformity of Tpm has been preserved. Thus it is possible to operate a 0.5145‐μ pumped parametric oscillator in a convenient wavelength regime and at a temperature above that for damage annealing.

MINORITY CARRIER LIFETIME IN ION‐IMPLANTED AND ANNEALED SILICON

D. Eirug Davies and S. A. Roosild

Appl. Phys. Lett. 17, 107 (1970); http://dx.doi.org/10.1063/1.1653325 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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Results are presented of an investigation to determine whether minority carrier lifetime within ion‐implanted layers can be restored to preirradiation levels by annealing. Reverse‐recovery measurements were conducted on diffused diodes damaged on the low‐doped side by light doses of carbon. The results show that practically complete recovery can be obtained, but annealing beyond the 400°C range associated with light‐dose lattice reordering to as high as 600–650°C is required.

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

I. Hayashi, M. B. Panish, P. W. Foy, and S. Sumski

Appl. Phys. Lett. 17, 109 (1970); http://dx.doi.org/10.1063/1.1653326 (3 pages) | Cited 168 times

Online Publication Date: 21 October 2003

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Double‐heterostructure GaAs☒Alx Ga1−x As injection lasers which operate continuously at heat‐sink temperatures as high as 311°K have been fabricated by liquid‐phase epitaxy. Thresh‐olds for square diodes as low as 100 A∕cm2 and for Fabry‐Perot diodes as low as 1600 A∕cm2 have been obtained. Some details of preparation and properties are given.

CHARGE COUPLED 8‐BIT SHIFT REGISTER

M. F. Tompsett, G. F. Amelio, and G. E. Smith

Appl. Phys. Lett. 17, 111 (1970); http://dx.doi.org/10.1063/1.1653327 (5 pages) | Cited 13 times

Online Publication Date: 21 October 2003

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An 8‐bit shift register has been developed based on the charge‐coupled device concept. The device configuration is essentially that of a linear array of 26 closely spaced MOS capacitors with a p‐n junction at either end. A packet of charge is inserted into the first capacitor from one of the p‐n junctions and then transferred down the array in a potential well created by sequential pulsing of the electrode potentials. A high‐charge transfer efficiency of greater than 99.9% per electrode has been obtained in this device for transfer times of 2μ sec. The use of the device as an 8‐bit shift register and a line imaging device are demonstrated thereby further verifying the charge‐coupled device concept and showing the basic feasibility of developing charge‐coupled devices for shift registers, logic operations, and optical imaging applications.

COINCIDENCE TWIST BOUNDARIES BETWEEN CRYSTALS OF MgO SMOKE

P. Chaudhari and J. W. Matthews

Appl. Phys. Lett. 17, 115 (1970); http://dx.doi.org/10.1063/1.1653328 (3 pages) | Cited 21 times

Online Publication Date: 21 October 2003

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Twist boundaries have been observed on {001} surfaces between crystals of MgO smoke. Measurements of the angle of twist across 80 of these grain boundaries have revealed a preference for boundaries at 16.5±0.3°, 22.6±0.3°, and 36.6±0.3°. These angles agree with those predicted by the coincidence site model to within the accuracy of measurement.

MEASUREMENTS OF PHOTON CORRELATIONS OF SECOND HARMONIC GENERATED LIGHT

F. Davidson, J. Klebba, C. Laurence, and F. Tittel

Appl. Phys. Lett. 17, 117 (1970); http://dx.doi.org/10.1063/1.1653329 (4 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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Results of measurements of the second‐order intensity correlation function of the optical field produced by cw optical second harmonic generation in a LiNbO3 crystal pumped by a He☒Ne laser operating in two independent axial modes are reported. The observed correlation function is shown to be in agreement with theoretical descriptions of second harmonic generation and with coherence theory.

OBSERVATION OF AN ENHANCED LAMB DIP WITH A PURE Xe GAIN CELL INSIDE A 3.51‐μ He☒Xe LASER

S. C. Wang, R. L. Byer, and A. E. Siegman

Appl. Phys. Lett. 17, 120 (1970); http://dx.doi.org/10.1063/1.1653330 (3 pages) | Cited 5 times

Online Publication Date: 21 October 2003

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The observation of an enhanced Lamb dip is reported for a pure Xe136 gain tube in a He☒Xe136 laser cavity. The pure Xe gain cell is operated at a pressure of 5 mTorr so that pressure broadening effects are negligible. The observed enhanced Lamb dip has a 5 MHz width and a depth which is 10% of the peak power. It is estimated that frequency stabilization at 3.51μ to one part in 1011 is possible using the enhanced Lamb dip as a reference.

MEASUREMENT OF ULTRASHORT LASER PULSES BY THREE‐PHOTON FLUORESCENCE

P. M. Rentzepis, C. J. Mitschele, and A. C. Saxman

Appl. Phys. Lett. 17, 122 (1970); http://dx.doi.org/10.1063/1.1653331 (4 pages) | Cited 25 times

Online Publication Date: 21 October 2003

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We have measured for the first time the duration of picosecond pulses by three‐photon fluorescence (3PF). The advantages over the two‐photon fluorescence (TPF) technique include higher contrast ratios (10:1 versus 3:1) and capability of measuring the phase‐intensity correlation.

HEAT TRANSFER TO LIQUID HELIUM IN NARROW CHANNELS WITH LAMINAR AND TURBULENT FLOW

M. Jergel and R. Stevenson

Appl. Phys. Lett. 17, 125 (1970); http://dx.doi.org/10.1063/1.1653332 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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Boiling heat transfer of liquid helium at 4.2°K has been studied under conditions of forced flow through rectangular channels. The heat transfer characteristic is dependent on whether the flow is laminar or turbulent. Both types of flow give greatly increased heat transfer, turbulent flow being superior. A correlation of the heat transfer data was obtained.

OBSERVATION OF PROPAGATION CUTOFF AND ITS CONTROL IN THIN OPTICAL WAVEGUIDES

David Hall, Amnon Yariv, and Elsa Garmire

Appl. Phys. Lett. 17, 127 (1970); http://dx.doi.org/10.1063/1.1653333 (3 pages) | Cited 29 times

Online Publication Date: 21 October 2003

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The first observation of optical cutoff in thin‐film waveguides is reported. The waveguides consist of thin (∼10μ) epitaxial layers of high‐resistivity GaAs deposited on lower‐resistivity GaAs substrates. The optical cutoff is controlled through the electro‐optic effect by applying an electric field across the epitaxial layer.

SILICON (111)−7 STRUCTURE OBTAINED BY CLEAVAGE AT ROOM TEMPERATURE

J. W. T. Ridgway and D. Haneman

Appl. Phys. Lett. 17, 130 (1970); http://dx.doi.org/10.1063/1.1653334 (2 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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It has been found that the Si (111)−7 structure can be observed within a few seconds of cleavage at room temperature. High‐temperature heat treatment of the surface, previously thought to be essential to produce the structure, is not required. Auger spectra of both the (7×7) and (2×1) structures obtainable on room‐temperature cleavage are identical. To obtain the ``cold'' (7×7) structure, the crystals have been annealed at some period (up to several days) prior to cleavage. The cleavage must be characterized by minimal pressure rise and only minor fracture marks. If impurities are at all involved in the (7×7) structure, these results show that the only ones required are those inherently in the cleavage surface.

UNIAXIAL MAGNETIC GARNETS FOR DOMAIN WALL ``BUBBLE'' DEVICES

A. H. Bobeck, E. G. Spencer, L. G. Van Uitert, S. C. Abrahams, R. L. Barns, W. H. Grodkiewicz, R. C. Sherwood, P. H. Schmidt, D. H. Smith, and E. M. Walters

Appl. Phys. Lett. 17, 131 (1970); http://dx.doi.org/10.1063/1.1653335 (4 pages) | Cited 64 times

Online Publication Date: 21 October 2003

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A number of nonmagnetostrictive flux‐grown garnets have been developed for use in cylindrical magnetic domain ``bubble'' devices. It has been discovered that the material directly beneath the natural {211} facets is magnetically uniaxial. A model relating the required cutting procedure to composition is presented.
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