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1 Sep 1970

Volume 17, Issue 5, pp. 183-227


THERMALLY INDUCED OSCILLATIONS AND NEGATIVE RESISTANCE IN GaAs DOUBLE‐INJECTION DEVICES

A. P. Ferro and S. K. Ghandhi

Appl. Phys. Lett. 17, 183 (1970); http://dx.doi.org/10.1063/1.1653356 (2 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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Thermally induced oscillations are observed in semiinsulating O2‐doped GaAs double‐injection devices, by heating them beyond a critical temperature. In addition, a stable voltage‐controlled negative‐resistance characteristic has been obtained by suitable device termination. Possible mechanisms for these oscillations are proposed.

POSITION OF THE ENERGY LEVELS OF TRIVALENT RARE‐EARTH ACTIVATOR IONS RELATIVE TO THE ELECTRONIC ENERGY BANDS OF LANTHANUM OXYSULFIDE: A NEW PICTURE OF EXCITATION AND RELAXATION

K. A. Wickersheim and R. A. Buchanan

Appl. Phys. Lett. 17, 184 (1970); http://dx.doi.org/10.1063/1.1653357 (4 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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It is shown that most rare‐earth activators in lanthanum oxysulfide show anomalous thermal quenching effects similar to those previously reported for Eu3+. An analysis of the activation energies derivable from regions of unusually rapid thermal quenching indicates, for all ions observed to date, that the quenching processes represent strong interaction between the 4f electron levels of the rare‐earth ions and the conduction band of the host. It thus becomes possible to locate experimentally the positions of the rare‐earth levels relative to the host‐bands. This in turn allows a general explanation of the excitation and relaxation characteristics of the rare‐earth oxysulfide phosphor system.

HIGH EFFICIENCY CO LASER AT ROOM TEMPERATURE

M. L. Bhaumik

Appl. Phys. Lett. 17, 188 (1970); http://dx.doi.org/10.1063/1.1653358 (1 page) | Cited 20 times

Online Publication Date: 21 October 2003

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A water‐cooled CO☒He☒N2☒O2 laser has been operated at 20 °C with a cw output of 10 W corresponding to an efficiency of 5.5%. With addition of xenon, the same mixture gave an output of 25 W with an efficiency of 12%. The efficiency increased to 17% with addition of both xenon and mercury.

EVIDENCE FOR EXCIPLEX LASER ACTION IN COUMARIN DYES BY MEASUREMENTS OF STIMULATED FLUORESCENCE

A. Dienes, C. V. Shank, and A. M. Trozzolo

Appl. Phys. Lett. 17, 189 (1970); http://dx.doi.org/10.1063/1.1653359 (3 pages) | Cited 23 times

Online Publication Date: 21 October 2003

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Experiments have been performed that measure the time dependence of stimulated fluorescence from acidified solutions of 4‐methylumbelliferone and 7‐hydroxycoumarin. The results show that laser action takes place from excited state complexes. It was found that exciplex emission is delayed after the neutral molecule emission. The delay gives a measure of the exciplex formation time. The measured dependence of exciplex formation time on hydrogen ion concentration, temperature, and pumping power was found to agree qualitatively with a simple model. Evidence for multiple exciplex formation is also presented.

MEASURED PULSE VELOCITY GREATER THAN c IN A NEON ABSORPTION CELL

F. R. Faxvog, C. N. Y. Chow, T. Bieber, and J. A. Carruthers

Appl. Phys. Lett. 17, 192 (1970); http://dx.doi.org/10.1063/1.1653360 (2 pages) | Cited 24 times

Online Publication Date: 21 October 2003

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The pulse velocity in a Ne absorption cell placed inside a self‐locked He☒Ne (6328 Å) laser has been found to exceed c, the free‐space velocity of light, by about 3 parts in 104. Conversely, the pulse velocity in a He☒Ne gain cell was less than c by about the same fraction. These results are consistent with the classical group velocity dω∕dk, where the frequencies are confined to the central region of the resonant line.

PULSED BEHAVIOR AND INVERSION MECHANISM IN THE CARBON MONOXIDE LASER

W. J. Graham, J. Kershenstein, J. T. Jensen, and K. Kershenstein

Appl. Phys. Lett. 17, 194 (1970); http://dx.doi.org/10.1063/1.1653361 (3 pages) | Cited 9 times

Online Publication Date: 21 October 2003

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Time delay of lasing transitions in carbon monoxide was investigated at 77 °K under pulsed electrical excitation. Inversion is attributed to anharmonic decoupling which makes v‐v relaxation ineffective for levels above a value ve=1 + kT∕hc2ωexe. Initial lasing occurs near ve with subsequent transitions resulting from cascading inversions. Measured delays ranged from 15 to 240 μ sec with undercoupled output up to 1.2 W.

MAGNETIC PROPERTIES OF PrCo5☒PrCu5 ALLOYS

B. A. Samarin

Appl. Phys. Lett. 17, 196 (1970); http://dx.doi.org/10.1063/1.1653362 (2 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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The magnetic properties of some ternary alloys PrCoxCu(5−x) in the range 4.5 ≥ x ≥ 2 have been investigated. The remanence and coercive force of these alloys both directly after annealing at 1020 °C for 5 h and after tempering for 4 h at 390 °C are very low in comparison with similar alloys in the SmCo5☒SmCu5 and CeCo5☒CeCu5 systems.

OPTICAL ABSOPTION OF GaN

J. I. Pankove, H. P. Maruska, and J. E. Berkeyheiser

Appl. Phys. Lett. 17, 197 (1970); http://dx.doi.org/10.1063/1.1653363 (3 pages) | Cited 29 times

Online Publication Date: 21 October 2003

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The absorption edge of GaN rises exponentially to a value of about 4 × 105 cm−1 at 3.5 eV (at 300 °K) suggesting direct optical transitions and a high joint density of states. Another absorption, which sets in beyond 1.3μ, increases with the 7th to 8th power of the wavelength.

NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON‐DOPED YTTRIUM‐IRON GARNET CRYSTALS

D. C. Bullock and D. J. Epstein

Appl. Phys. Lett. 17, 199 (1970); http://dx.doi.org/10.1063/1.1653364 (3 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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A current‐controlled negative resistance has been found in thin single‐crystal wafers of silicon‐doped yttrium‐iron garnet (Si‐YIG). Switching properties have been examined, and relaxation oscillations in the range 0.5–1 MHz have been established in the negative resistance region. A conductive memory state having a behavior similar to that occurring in amorphous semiconductors has also been seen.

OPTICAL PROBING OF LOCALIZED ELECTRON‐HOLE PLASMAS IN n‐TYPE InSb

J. Benoit

Appl. Phys. Lett. 17, 202 (1970); http://dx.doi.org/10.1063/1.1653365 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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A CO2 laser is used as a hole density probe in order to study low‐field contact effects in n‐type InSb near liquid‐nitrogen temperature—injection at the anode and avalanche, in presence of a transverse magnetic field, and at the cathode. These two effects are shown to be present during acoustoelectric oscillations.

SURFACE EFFECTS AND LOW FREQUENCY LOSSES IN HARD SUPERCONDUCTORS

S. T. Sekula and J. H. Barrett

Appl. Phys. Lett. 17, 204 (1970); http://dx.doi.org/10.1063/1.1653366 (2 pages) | Cited 15 times

Online Publication Date: 21 October 2003

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The power dissipation in a hard superconductor based on a model consisting of a bulk flux pinning region and a surface sheath is calculated. The results indicate that the losses are somewhat greater than previously calculated.

FIELD‐INDUCED SURFACE REARRANGEMENT IN A FIELD‐ION MICROSCOPE

A. van Oostrom

Appl. Phys. Lett. 17, 206 (1970); http://dx.doi.org/10.1063/1.1653367 (3 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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Adsorption of nitrogen on tungsten at 78°K was studied in a field‐ion microscope equipped with a channel‐plate image intensifier. Field‐induced surface rearrangement was observed using argon as the image gas. The changes in the field‐ion pattern are attributed to surface diffusion of tungsten‐nitrogen complexes.

PHOTOANODIC ENGRAVING OF HOLOGRAMS ON SILICON

A. L. Dalisa, W. K. Zwicker, D. J. DeBitetto, and P. Harnack

Appl. Phys. Lett. 17, 208 (1970); http://dx.doi.org/10.1063/1.1653368 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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Holograms have been recorded on the surface of Si by means of a photoanodic reaction. Resolution better than 2500 lines∕mm have been achieved in holographically recorded gratings. Diffuse object holograms with reconstruction efficiencies as high as 10% have also been obtained.

THIN‐OXIDE MOS CAPACITANCE STUDIES OF FAST SURFACE STATES

William R. Hunter, D. H. Eaton, and C. T. Sah

Appl. Phys. Lett. 17, 211 (1970); http://dx.doi.org/10.1063/1.1653369 (3 pages) | Cited 10 times

Online Publication Date: 21 October 2003

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Fast surface states at the silicon‐silicon dioxide interface have been studied using the MOS capacitor structure with a very thin oxide (50–100 Å), which greatly enhances the effect of the surface states on the capacitance‐voltage characteristics. On p‐type silicon, a surface‐state distribution with a peak at 0.3 eV above the valence band is observed. Comparison of the experimental results with theoretical calculations based on the equivalent circuit model is made. Total density of state of 5.4×1012∕cm2 with a peak of 3×1013 surface states∕cm2 eV are observed.

CRITERION FOR SELECTION OF cw LASER HOST MATERIALS TO INCREASE AVAILABLE POWER IN THE FUNDAMENTAL MODE

G. A. Massey

Appl. Phys. Lett. 17, 213 (1970); http://dx.doi.org/10.1063/1.1653370 (3 pages) | Cited 21 times

Online Publication Date: 21 October 2003

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Present Nd:YAG lasers are subject to thermal birefringence and bifocusing which contribute to large reductions in polarized and∕or fundamental mode output when the laser is pumped at high average powers. By replacing the cubic YAG host with a suitably oriented birefringent host material, this limitation can be overcome. We suggest this consideration as an important criterion for the selection of crystalline laser host materials, since an order‐of‐magnitude increase in the brightness of cw lasers may result. One new material which has the required properties is YAlO3.

A FIELD‐INDEPENDENT OPTICALLY PUMPED 85Rb MASER OSCILLATOR

W. A. Stern and R. Novick

Appl. Phys. Lett. 17, 216 (1970); http://dx.doi.org/10.1063/1.1653371 (2 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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Oscillation is reported in an optically pumped 85Rb maser operating on the magnetic‐field‐independent ground‐state hyperfine transition (3035.73…MHz). A power output of 8×10−10 W was observed. Frequency shifts due to buffer gas were measured. Light and cavity shifts were also observed.

EFFECTS OF SURFACE STATES ON SURFACE WAVE AMPLIFICATION

S. Zemon and E. M. Conwell

Appl. Phys. Lett. 17, 218 (1970); http://dx.doi.org/10.1063/1.1653372 (3 pages) | Cited 6 times

Online Publication Date: 21 October 2003

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The present theory of amplification of Rayleigh waves by drifting carriers in a semiconductor neglects the possibility of surface states. Experimental investigations of the propagation of Rayleigh waves on CdS have revealed in many samples behavior that differs markedly from theoretical expectations, notably (1) relatively small amounts of high‐frequency amplified noise; (2) relatively small parametric downconversion; (3) increase with strain, starting at the smallest strains conveniently measured, of the drift field Eco at which attenuation changes to gain; (4) decreases in conductance that persist milliseconds after the passage of high‐strain surface waves. The presence of a depletion layer at the surface provides explanations for all these features.

THERMAL BLOOMING OF A 10.6‐μ LASER BEAM IN CO2

J. R. Kenemuth, C. B. Hogge, and P. V. Avizonis

Appl. Phys. Lett. 17, 220 (1970); http://dx.doi.org/10.1063/1.1653373 (4 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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Thermal blooming of a 10.6‐μ laser beam in a CO2 absorption cell has been investigated with high time and position resolution. Good agreement has been found between experimental results and calculations made using an eikonal treatment.

CaMoO4 ELECTRONICALLY TUNABLE OPTICAL FILTER

S. E. Harris, S. T. K. Nieh, and R. S. Feigelson

Appl. Phys. Lett. 17, 223 (1970); http://dx.doi.org/10.1063/1.1653374 (3 pages) | Cited 32 times

Online Publication Date: 21 October 2003

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The paper describes a CaMoO4 transmission‐type acousto‐optic filter. Tuning from about 6700 to 5100 Å is obtained by changing an acoustic frequency from 40 to 68 MHz. The filter bandwidth is 8 Å at an f∕6 aperture. 95% transmission is obtained at an acoustic power density of 69 mW∕mm2.

PIEZOELECTRIC LEAKY SURFACE WAVE IN LiNbO3

A. Takayanagi, K. Yamanouchi, and K. Shibayama

Appl. Phys. Lett. 17, 225 (1970); http://dx.doi.org/10.1063/1.1653375 (3 pages) | Cited 10 times

Online Publication Date: 21 October 2003

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Velocities and attenuations of piezoelectric leaky surface waves in LiNbO3 are computed. As the result, we have found that the effective electromechanical coupling coefficient of the leaky surface wave propagating along the x axis of the 64° rotated y‐cut plane is very large, K2=0.113; and by radiating the energy into the solid this wave attenuation is 0.36 dB∕wave‐length for the free surface and goes to zero for the metalized surface.
FREE

ERRATUM: PHOTOELECTRONIC PROPERTIES OF ION‐IMPLANTED CdS

S. L. Hou and J. A. Marley

Appl. Phys. Lett. 17, 227 (1970); http://dx.doi.org/10.1063/1.1653376 (1 page)

Online Publication Date: 21 October 2003

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