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1 Nov 1970

Volume 17, Issue 9, pp. 357-411


cw LASER ACTION AT 81.5 AND 263.4 μm IN OPTICALLY PUMPED AMMONIA GAS

T. Y. Chang, T. J. Bridges, and E. G. Burkhardt

Appl. Phys. Lett. 17, 357 (1970); http://dx.doi.org/10.1063/1.1653432 (2 pages) | Cited 18 times

Online Publication Date: 21 October 2003

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cw laser action at 81.5 and 263.4 μm, corresponding to a rotational transition and an inversion transition in the v2 state of NH3, has been obtained by optically pumping the gas with an N2O laser.

SOME OPTICAL PROPERTIES OF ALUMINUM ARSENIDE

H. T. Minden

Appl. Phys. Lett. 17, 358 (1970); http://dx.doi.org/10.1063/1.1653433 (3 pages) | Cited 9 times

Online Publication Date: 21 October 2003

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Epitaxial AlAs was grown on GaAs substrates, and polycrystalline AlAs films were deposited on quartz. The visible optical absorption edge indicated that the direct band gap was 3.5 eV while the indirect gap was 2.2 eV. Infrared interference fringes were measured and the high‐frequency dielectric constant was determined to be 15.2. The transverse restrahl frequency was 400 cm−1.

ENHANCEMENT OF THE FAR‐INFRARED PHOTOCONDUCTIVE RESPONSE IN p‐TYPE Ge

R. J. Wagner and G. A. Prinz

Appl. Phys. Lett. 17, 360 (1970); http://dx.doi.org/10.1063/1.1653434 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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An increase in far‐infrared photoconductivity caused by near‐infrared light has been observed. A number of possible explanations are given for the experimental observations. The potential use of this technique for experiments beyond 100μ is suggested.

FIELD‐ASSISTED REEMISSION OF CHARGE CARRIERS FROM SHALLOW IMPURITY CENTERS IN GERMANIUM

M. Martini and T. A. McMath

Appl. Phys. Lett. 17, 362 (1970); http://dx.doi.org/10.1063/1.1653435 (3 pages) | Cited 2 times

Online Publication Date: 21 October 2003

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Field‐assisted reemission has been observed at low temperatures for charge carriers captured by shallow ionized donor and acceptor states in germanium. The observed behavior is well explained by the three‐dimensional Poole‐Frenkel theory at moderate field strength (400–1000 V cm−1); at higher fields, other effects dominate the reemission process.

DONOR BEHAVIOR IN INDIUM‐ALLOYED SILICON

J. O. McCaldin and J. W. Mayer

Appl. Phys. Lett. 17, 365 (1970); http://dx.doi.org/10.1063/1.1653436 (2 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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The anomalous doping behavior of Si regrown from In solution was studied by (1) Schottky barrier evaluation of conductivity type, (2) electron microprobe analysis for phosphorus, and (3) channeling effect measurements for interstitial In. The latter showed In present at ∼ 1019 cm−3, but not occupying a regular substitutional or interstitial position. A correlation was found in the first two measurements between phosphorus contamination and n‐type conductivity. When the In was contacted only by quartz freshly etched in HF, the n‐type behavior and phosphorus contamination disappeared. The anomalous doping behavior is most likely due to phosphorus inpurity picked up by the In.

LOW ACOUSTIC LOSS CHALCOGENIDE GLASSES— A NEW CATEGORY OF MATERIALS FOR ACOUSTIC AND ACOUSTO‐OPTIC APPLICATIONS

J. T. Krause, C. R. Kurkjian, D. A. Pinnow, and E. A. Sigety

Appl. Phys. Lett. 17, 367 (1970); http://dx.doi.org/10.1063/1.1653438 (2 pages) | Cited 19 times

Online Publication Date: 21 October 2003

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Some ternary groups 1VA‐VA‐V1A nonoxide glasses have been found which have very low acoustic losses of the order of fused silica, low values of sound velocity, and very high acousto‐optic figures of merit. Their optical transmission range is 1 – 12μ. The unusual combination of these parameters in a chemically stable isotropic medium make these glasses attractive for us in acoustic and acousto‐optic devices operating at infrared wavelengths.

OPTICAL PROBING OF BULK WAVES PRESENT IN ACOUSTIC SURFACE WAVE DELAY LINES

R. V. Schmidt

Appl. Phys. Lett. 17, 369 (1970); http://dx.doi.org/10.1063/1.1653439 (3 pages) | Cited 7 times

Online Publication Date: 21 October 2003

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Diffraction of laser light from bulk waves present in a LiNbO3 surface wave delay line has been used to probe surface wave mode conversion. Up to 4% of the power present in a surface wave incident on a reactively loaded interdigital transducer has been observed to be scattered into shear waves. In addition, a driven interdigital transducer has been seen to radiate bulk waves with directivity properties well described by a phased array antenna model.

OPTICAL COUPLING OF ADJACENT STRIPE‐GEOMETRY JUNCTION LASERS

José E. Ripper and Thomas L. Paoli

Appl. Phys. Lett. 17, 371 (1970); http://dx.doi.org/10.1063/1.1653440 (3 pages) | Cited 26 times

Online Publication Date: 21 October 2003

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The observation of coupling and consequent coherent operation of two adjacent parallel stripe‐geometry GaAs lasers in a monolithic structure is reported. Coupling is obtained when the distance between the lasers is small enough to allow the optical field of one laser to penetrate into the active region of the other.

EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID‐PHASE EPITAXY

G. M. Blom and J. M. Woodall

Appl. Phys. Lett. 17, 373 (1970); http://dx.doi.org/10.1063/1.1653441 (4 pages) | Cited 14 times

Online Publication Date: 21 October 2003

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See Also: Erratum

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Light‐emitting InP diodes were made by liquid‐phase epitaxy. The most efficient diodes result when the n‐type layers are grown from a Sn‐doped melt, while the p‐type layers are grown from the same melt, but overcompensated with Zn. External quantum efficiencies up to 0.75% at room temperature and 11.7% at 77°K were observed in uncoated diodes. Threshold current densities for stimulated emission were as low as 750 A∕cm2 at 77°K. Spontaneous emission can be observed normal to the p‐n junction.

MODE LOCKING OF A TRANSVERSELY EXCITED ATMOSPHERIC PRESSURE CO2 LASER

O. R. Wood, R. L. Abrams, and T. J. Bridges

Appl. Phys. Lett. 17, 376 (1970); http://dx.doi.org/10.1063/1.1653442 (3 pages) | Cited 22 times

Online Publication Date: 21 October 2003

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Mode locking of a transversely excited atmospheric‐pressure CO2 laser has been achieved through the use of a germanium acousto‐optic modulator. Subnanosecond pulse widths and peak powers in excess of 1 MW have been obtained.

LATTICE EXPANSION AND STRAIN IN ION‐BOMBARDED GaAs AND SI

R. E. Whan and G. W. Arnold

Appl. Phys. Lett. 17, 378 (1970); http://dx.doi.org/10.1063/1.1653443 (3 pages) | Cited 57 times

Online Publication Date: 21 October 2003

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Measurements of the surface topography of ion‐bombarded GaAs and Si show a marked elevation of the irradiated portion of the surface relative to the surrounding unirradiated material. The average lattice atom displacement brought about by the expansion can cause anomalously high yields of displaced atoms as measured by backscattering of particles incident along channeling directions.

HOLOGRAPHIC RECORD OF POLARIZATION IN VOLUME HOLOGRAM

S. C. Som and R. A. Lessard

Appl. Phys. Lett. 17, 381 (1970); http://dx.doi.org/10.1063/1.1653444 (2 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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It is pointed out that volume holograms can be successfully used to store and retrieve informations about the state of polarization of a wave field. Supporting experimental results, which were obtained with a polarized wave field caused by stress birefringence, are presented.

VACUUM ULTRAVIOLET LASER EMISSION FROM MOLECULAR HYDROGEN

R. W. Waynant, J. D. Shipman, R. C. Elton, and A. W. Ali

Appl. Phys. Lett. 17, 383 (1970); http://dx.doi.org/10.1063/1.1653445 (2 pages) | Cited 30 times

Online Publication Date: 21 October 2003

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Using a short‐risetime traveling‐wave discharge system, lasing has been produced in molecular hydrogen in the 1600‐Å region and confirmed by direct observation of extensive amplification in the direction of travel. Pulsewidths and powers on the order of 1 nsec and hundreds of kilowatts, respectively, are observed. The ten H2 lines resolved extend from 1567 to 1613 Å in the Lyman band. The laser lines originate from transitions between the vibrational levels of the state B(2pσ1Σu+) and the higher vibrational levels of the ground state X(1s1Σg+).

A CURRENT VOLTAGE TECHNIQUE FOR OBTAINING LOW‐FREQUENCY C‐V CHARACTERISTICS OF MOS CAPACITORS

W. K. Kappallo and J. P. Walsh

Appl. Phys. Lett. 17, 384 (1970); http://dx.doi.org/10.1063/1.1653446 (3 pages) | Cited 1 time

Online Publication Date: 21 October 2003

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A simple technique for the measurement of low‐frequency capacitance‐voltage characteristics of MOS capacitors utilizing the current response of these devices to slow linear voltage ramps is described. The capability of this technique is demonstrated in representative C‐V curves showing the effects of temperature, frequency, and light on the MOS characteristics.

cw HF ELECTRIC‐DISCHARGE MIXING LASER

J. J. Hinchen and C. M. Banas

Appl. Phys. Lett. 17, 386 (1970); http://dx.doi.org/10.1063/1.1653447 (3 pages) | Cited 12 times

Online Publication Date: 21 October 2003

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Continuous chemical laser operation was observed with HF and DF in a system in which fluorine atoms produced in a glow discharge in SF6 are mixed with hydrogen in a subsonic flow region upstream of a transverse optical cavity. A maximum power output of 5.5 W was obtained and measurements of the output spectral distribution were made.

HIGH‐POWER CO2 ELECTRIC DISCHARGE MIXING LASER

Clyde O. Brown

Appl. Phys. Lett. 17, 388 (1970); http://dx.doi.org/10.1063/1.1653448 (4 pages) | Cited 18 times

Online Publication Date: 21 October 2003

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An electric discharge mixing laser is described in which N2 is vibrationally excited in an electrical discharge and then mixed with cold CO2 providing a population inversion and, consequently, lasing action at 10.6μ in a high‐pressure high‐flow speed channel. Convection is the principle heat removal mechanism, permitting system operation at power densities substantially higher than in conventional wall‐dominated electric discharge lasers. Results of experiments with a 30‐cm‐wide by 1.2‐cm‐high EDML channel are described. With this system, small‐signal gain coefficients of 4.3% cm−1 and optical powers of up to 900 W at 11% efficiency have been obtained at a pressure of 48 Torr.

ENHANCED DIFFUSION OF HIGH‐TEMPERATURE ION‐IMPLANTED ANTIMONY INTO SILICON

Kenji Gamo, Kohzoh Masuda, Susumu Namba, Shinji Ishihara, and Itsuro Kimura

Appl. Phys. Lett. 17, 391 (1970); http://dx.doi.org/10.1063/1.1653449 (3 pages) | Cited 10 times

Online Publication Date: 21 October 2003

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Concentration profiles of 20‐keV high‐temperature ion‐implanted antimony into a silicon single crystal were measured by means of radioactivation analysis and the enhanced diffusion was observed. The concentration profiles were found to be independent of temperature over the range between 500 °C and 800 °C and to be dependent on the dose rate of ion implantation. The diffusion coefficient of antimony is estimated to be about 1.1×10−15 cm2∕sec for the dose rate of about 1.2×1012 ions∕cm2 sec and about 6.6×10−15 cm2∕sec for that of about 7.2×1012 ions∕cm2 sec. The measured concentration profiles are in good agreement with the calculated concentration profile. These results are explained on the basis of a vacancy mechanism.

MODE LOCKING OF THE CO2 LASER BY INTRACAVITY PHASE MODULATION

M. M. Mann, R. G. Eguchi, W. B. Lacina, M. L. Bhaumik, and W. H. Steier

Appl. Phys. Lett. 17, 393 (1970); http://dx.doi.org/10.1063/1.1653450 (3 pages) | Cited 3 times

Online Publication Date: 21 October 2003

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Stable mode locking of a CO2 laser has been obtained with the use of a resonated internal electro‐optic phase modulator driven at frequencies near the axial‐mode interval. Pulses of 25‐nsec duration and 147‐nsec period were observed. Pulse trains at twice the fundamental mode frequency were also obtained. Stable locking was achieved with an rf input power to the modulator of less than 1 mW. Locking could be induced when the modulation frequency was within ± 130 kHz of the fundamental axial‐mode frequency.

Nd,Cr : YAlO3 LASER TAILORED FOR HIGH‐ENERGY Q‐SWITCHED OPERATION

M. Bass and M. J. Weber

Appl. Phys. Lett. 17, 395 (1970); http://dx.doi.org/10.1063/1.1653451 (4 pages) | Cited 32 times

Online Publication Date: 21 October 2003

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Spectral and pulsed laser properties of Nd3+ : YAlO3 crystals codopes with Cr3+ are described. The anisotropic properties of yttrium orthoaluminate were used to select a laser rod orientation which maximized the energy storage capability for Q‐switched operation. It is demonstrated that a c‐axis rod of this material can produce energy outputs greater than those obtainable from the best Nd3+ : YAG rods of comparable size in both long‐pulse and Q‐switched laser operation.

CHARACTERIZATION OF SILICON SURFACES BY THE ELECTRON ENERGY‐LOSS SPECTRUM

P. S. P. Wei

Appl. Phys. Lett. 17, 398 (1970); http://dx.doi.org/10.1063/1.1653452 (3 pages) | Cited 4 times

Online Publication Date: 21 October 2003

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The energy‐loss spectra of silicon during several stages of the cleaning treatment have been studied in a LEED apparatus. The results suggest that the energy‐loss spectrum is sensitive to the change in chemical composition and electronic structure of the solid surface.

cw LASER ACTION ON 24 VISIBLE WAVELENGTHS IN Se II

W. T. Silfvast and M. B. Klein

Appl. Phys. Lett. 17, 400 (1970); http://dx.doi.org/10.1063/1.1653453 (4 pages) | Cited 36 times

Online Publication Date: 21 October 2003

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cw laser action has been observed at 24 wavelengths in the visible spectrum of Se II in a He☒Se discharge. The wavelengths range from 4604 to 6535 Å. A power output of 30 mW was measured on six lines oscillating simultaneously. We obtained as many as 13 wavelengths lasing at the same time in a cavity with broad‐band high‐reflectivity mirrors.

HIGH‐ORDER TRANSVERSE CAVITY MODES IN HETEROJUNCTION DIODE LASERS

J. K. Butler, H. S. Sommers, and H. Kressel

Appl. Phys. Lett. 17, 403 (1970); http://dx.doi.org/10.1063/1.1653454 (4 pages) | Cited 11 times

Online Publication Date: 21 October 2003

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See Also: Erratum

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A refined theoretical model predicts the modal content in the plane perpendicular to the junction for heterojunction injection lasers. It gives good agreement with observed far‐field patterns. Because high‐order modes are favored, lasers with a wide optical cavity sandwiched between two heterojunctions have a beam width at least double that of single‐heterojunction lasers. In a thin cavity which supports but one mode, the increased confinement of the double heterojunction broadens the beam to about 40° at half‐power.

EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE

G. Dorda

Appl. Phys. Lett. 17, 406 (1970); http://dx.doi.org/10.1063/1.1653455 (3 pages) | Cited 10 times

Online Publication Date: 21 October 2003

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Piezoresistance coefficients were determined for n‐type inversion layers at low gate fields on (100), (110), and (111) surfaces of silicon at room temperature. Results deviating from bulk values were found on the (110) and (111) planes. This anomaly can be understood in terms of changed effective masses of conduction electrons on the surface as a consequence of the quantization of the carrier wave function in the surface channel. Good agreement between theoretical results and experiment was found. It was observed that the quantization is efficient even at the threshold voltage (i.e., ∼2×104 V∕cm) and occasions the anisotropic piezoresistance on the (110) surface.

THERMOELASTIC DOSIMETRY OF RELATIVISTIC ELECTRON BEAMS

F. C. Perry

Appl. Phys. Lett. 17, 408 (1970); http://dx.doi.org/10.1063/1.1653456 (4 pages) | Cited 7 times

Online Publication Date: 21 October 2003

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A technique is described of obtaining directly the energy absorption profile of a solid heated by pulses of intense radiation. The appropriate thermoelastic equations were solved for two cases of particular interest, instantaneous deposition and energy absorbed at a constant rate. The dynamic response of aluminum and copper to electrons of everage energy 1.5 MeV was measured by means of a laser interferometer, and the resulting energy profiles were compared with profiles obtained using a thin film dosimetry technique. The resulting quantitative agreement with the thermoelastic theory is discussed.
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