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15 Jun 1971

Volume 18, Issue 12, pp. 529-586

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PLASMA ELECTRON HEATING BY ABSORPTION OF COLD ELECTRONS

K. R. MacKenzie, R. J. Taylor, D. Cohn, E. Ault, and H. Ikezi

Appl. Phys. Lett. 18, 529 (1971); http://dx.doi.org/10.1063/1.1653525 (2 pages) | Cited 26 times

Online Publication Date: 22 October 2003

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The electron temperature of a quiescent plasma in a metal discharge chamber, where the walls serve as the anode, can be raised by introducing a second anode consisting of 0.0025‐cm‐diam tungsten wires held at potentials as high as 100 V with respect to the walls. Hot electrons orbit the wires and return to the plasma. Cold electrons are absorbed. Smooth temperature variation, without introduction of noise, has been achieved between 0.5 and 4.0 eV.

DEUTERIUM FLUORIDE VIBRATIONAL OVERTONE CHEMICAL LASER

Steven N. Suchard and George C. Pimentel

Appl. Phys. Lett. 18, 530 (1971); http://dx.doi.org/10.1063/1.1653526 (2 pages) | Cited 2 times

Online Publication Date: 22 October 2003

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Overtone (Δv = 2) laser emission has been observed for the first time in a vibration‐rotation laser system. The N2F4:CD4 chemical laser was operated with a filter in the optical cavity to attenuate the spectral region of the fundamental transitions (Δv = 1). The v = 3 → 1 DF overtone reached threshold and the transition of highest gain was P3−1(4). Such techniques permit ``frequency doubling'' (or tripling, quadrupling, etc.) in vibration‐rotation lasers as well as determination of rate constant ratios other than the one that displays maximum gain.

STATISTICAL PROPERTIES OF RANDOMLY MODULATED PSEUDOTHERMAL OPTICAL FIELD

C. Bendjaballah and F. Perrot

Appl. Phys. Lett. 18, 532 (1971); http://dx.doi.org/10.1063/1.1653527 (3 pages) | Cited 7 times

Online Publication Date: 22 October 2003

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Results of measurements of photoelectric‐counting distributions and time‐interval distributions of the optical field produced by randomly modulated pseudothermal source are reported.

CHARGED‐PARTICLE RADIATION DAMAGE OBSERVED AS DIMPLING OF THIN SILICON TARGETS

R. L. Meek, W. M. Gibson, and J. P. F. Sellschop

Appl. Phys. Lett. 18, 535 (1971); http://dx.doi.org/10.1063/1.1653528 (4 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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When thin uniform silicon targets are bombarded with energetic ions, macroscopic deformation of the target occurs in the irradiated region. This deformation, which is euphemistically termed a ``dimple'', may be interpreted as a radiation‐induced lattice expansion. Measurement of the amount of deformation allows lattice expansion to be determined with a sensitivity comparable to or better than the most sensitive existing methods. Measurements on silicon irradiated at room temperature by 1.8‐MeV He ions show that the lattice expansion at low flux increases essentially linearly with fluence below about 5×1016 He ion∕cm−2, whereupon it increases more rapidly until saturation starts to occur at an order‐of‐magnitude higher fluence. Isochronal annealing results are discussed.

DETERMINATION OF OPTICAL GAIN FOR CO TRANSITIONS IN A CS2☒O2 FLAME BY OSCILLATION‐RANGE MEASUREMENTS

N. Djeu, H. S. Pilloff, and S. K. Searles

Appl. Phys. Lett. 18, 538 (1971); http://dx.doi.org/10.1063/1.1653529 (3 pages) | Cited 11 times

Online Publication Date: 22 October 2003

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Optical gain in the neighborhood of 2% has been measured in CO vibration‐rotation transitions P(12)–P(14) in the bands 8–7, 9–8, and 10–9 in a free‐burning CS2☒O2 flame. The flame was inside a single‐transition single‐mode CO laser cavity. Gain was determined from the change in the oscillation range of the frequency‐tuning curve. This method is particularly useful for the measurement of small optical gains and losses.

HOLOGRAPHIC PATTERN FIXING IN ELECTRO‐OPTIC CRYSTALS

Juan J. Amodei and David L. Staebler

Appl. Phys. Lett. 18, 540 (1971); http://dx.doi.org/10.1063/1.1653530 (3 pages) | Cited 193 times

Online Publication Date: 22 October 2003

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This paper describes the results of an investigation into techniques for obtaining erasure resistant holograms in electro‐optic crystals. The most successful approach made use of thermally activated ionic drift during or after recording. The samples are heated for about 30 min at 100°C to obtain optically nonerasable holograms with as much as 50% diffraction efficiency in LiNbO3 or in doped Ba2NaNb5O15.

SPECTRAL ANALYSIS OF THE BACKSCATTERED LIGHT FROM A LASER‐PRODUCED PLASMA

P. Belland, C. DeMichelis, M. Mattioli, and R. Papoular

Appl. Phys. Lett. 18, 542 (1971); http://dx.doi.org/10.1063/1.1653531 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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The backscattered light from a laser‐produced plasma has been spectrally analyzed by means of a grating monochromator. The incident‐laser beam has a smooth spectrum of 37‐Å half‐width. For incident‐power densities higher than 1.5 × 1012 W∕cm2, the back‐scattered spectrum consists of discrete lines, equally spaced, on the short‐wavelength side of the maximum of the incident spectrum.

NEW INSTABILITY CRITERION FOR RECOMBINATION WAVE DIODES

P. Antognetti, A. Chiabrera, and S. Ridella

Appl. Phys. Lett. 18, 544 (1971); http://dx.doi.org/10.1063/1.1653532 (3 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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We have introduced a new instability criterion for a recombination wave diode, e.g., golddoped silicon p+‐i‐n+ diode, irrespective of the type of injecting contacts. This criterion gives a class of sufficient conditions to obtain open‐circuit oscillations, and substitutes the presently available instability condition. The theoretical results show a satisfactory agreement with known experimental data.

PASSIVE MODE LOCKING OF A HIGH-PRESSURE CO2 LASER WITH A CO2 SATURABLE ABSORBER

A. F. Gibson, M. F. Kimmitt, and C. A. Rosito

Appl. Phys. Lett. 18, 546 (1971); http://dx.doi.org/10.1063/1.1653533 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Passive mode locking of a transversely excited CO2 laser has been obtained using CO2 at 350°C as a saturable absorber. Pulses with a half-width of 4-nsec duration have been observed.

RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION‐IMPLANTED SILICON

D. Eirug Davies and S. Roosild

Appl. Phys. Lett. 18, 548 (1971); http://dx.doi.org/10.1063/1.1653534 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Thermally stimulated current measurements have been conducted on low‐dose carbon‐implanted silicon. After annealing for lattice reordering, five defect levels are found still present and of energies ranging from 0.27 to 0.40 eV. Since they all show similar annealing to above 500°C, they reveal a major annealing stage in low‐dose ion‐implanted silicon that occurs at considerably higher temperatures than what is generally ascribed to lattice reordering.

OBSERVATION OF THE SIMULTANEOUS GENERATION OF THE SECOND, THIRD, AND FOURTH HARMONICS OF 1.06‐μ RADIATION IN Ba2NaNb5O15, LiNbO3, and LiIO3 CRYSTALS

Won K. Ng and E. J. Woodbury

Appl. Phys. Lett. 18, 550 (1971); http://dx.doi.org/10.1063/1.1653535 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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We have observed simultaneous generation of the second, third, and fourth harmonics of a 1.06‐μ fundamental in Ba2NaNb5O15, LiNbO3, and LiIO3 crystals. Experimental results reveal that the third harmonic is generated through the process of mixing the fundamental with the second harmonic; the fourth harmonic arises as a result of doubling the second harmonic. Strong absorption of the fourth harmonic by the crystal is believed to be the principle mechanism responsible for the observed thermal detuning in phase‐matched second harmonic generation.

INTERNAL AND SURFACE CONTRIBUTION TO LIGHT DIFFRACTION BY SURFACE‐ACOUSTIC WAVES

A. Alippi, A. Palma, L. Palmieri, and G. Socino

Appl. Phys. Lett. 18, 552 (1971); http://dx.doi.org/10.1063/1.1653536 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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An analysis is done of depth interaction between polarized light and acoustic‐surface waves, which gives account for the actual dependence of the scattered‐light intensity vs the angle of incidence, in transmission experiments. Measurements were performed at 11.8 and 18.8 MHz for surface waves propagating in Y direction on X‐cut, α‐quartz, and Z‐polarized light.

NEGATIVE ION EXTRACTION FROM THE PLASMA DURING ANODIZATION IN THE dc OXYGEN DISCHARGE

J. F. O'Hanlon and W. B. Pennebaker

Appl. Phys. Lett. 18, 554 (1971); http://dx.doi.org/10.1063/1.1653537 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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This letter describes an experiment which demonstrates that negative ions in the oxygen discharge are the source of the oxygen incorporated in the anodic oxide. By use of time‐varying electric fields, negative oxygen ions are eliminated from the anodizing current. Under this condition, film growth is not observed.

FORMATION OF OPTICAL WAVEGUIDES IN PHOTORESIST FILMS

D. B. Ostrowsky and A. Jacques

Appl. Phys. Lett. 18, 556 (1971); http://dx.doi.org/10.1063/1.1653538 (2 pages) | Cited 17 times

Online Publication Date: 22 October 2003

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We have demonstrated that photoresist films on glass substrates can act as optical waveguides. Coupling to these guides can be accomplished by inscription of a grating in the guide material itself. Approximately 50% coupling efficiencies have been observed. Waveguide effects can considerably alter the behavior of holograms and gratings inscribed on such structures.

ELECTRON DENSITY IN ION‐LASER DISCHARGES

L. D. Pleasance and E. V. George

Appl. Phys. Lett. 18, 557 (1971); http://dx.doi.org/10.1063/1.1653539 (5 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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A new analysis of the TE011 microwave‐cavity mode applicable in the high‐electron density range commonly found in ion‐laser discharges is described. Measurements of the electron density in a cw argon‐ion laser discharge in the pressure range where lasing action occurs are presented.

FAST MAGNETICALLY CONTROLLED SWITCHING IN IRON OXIDE FILMS

I. Balberg

Appl. Phys. Lett. 18, 562 (1971); http://dx.doi.org/10.1063/1.1653540 (3 pages)

Online Publication Date: 22 October 2003

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The application of a magnetic field of 10 kG causes a decrease by more than a factor of 2 in the delay time for switching in iron oxide films. This effect is associated with very short switching time (≲ 20 nsec) and some other characteristic properties. It appears that while initiated thermally, the switching itself is an electric breakdown that follows a buildup of a high electric field.

EFFICIENT WIRE‐GRID DUPLEXER POLARIZER FOR CO2 LASERS

P. K. Cheo and C. D. Bass

Appl. Phys. Lett. 18, 565 (1971); http://dx.doi.org/10.1063/1.1653541 (3 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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A chromium wire‐grid duplexer polarizer for CO2 lasers has been developed using holographic and chemical etching techniques. The reflection and transmission measurements show reasonably good agreement with the theory.

ENHANCEMENT OF CO2 LASER POWER AND EFFICIENCY BY NEUTRON IRRADIATION

T. Ganley, J. T. Verdeyen, and G. H. Miley

Appl. Phys. Lett. 18, 568 (1971); http://dx.doi.org/10.1063/1.1653543 (2 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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Experiments have been performed which show that it is possible to increase the efficiency and power of a CO2 laser by irradiating the discharge with energetic α and Li ions produced by the (n, α) reaction with B10. This effect is explained by a tailoring of the electron‐energy distribution towards optimum pumping of the laser.

A NEW CRYSTAL Pb5(GeO4)(VO4)2 FOR ACOUSTO‐OPTIC DEVICE APPLICATIONS

T. Yano, Y. Nabeta, and A. Watanabe

Appl. Phys. Lett. 18, 570 (1971); http://dx.doi.org/10.1063/1.1653544 (2 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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A new melt‐grown crystal of apatite type Pb5(GeO4)(VO4)2 has been found to be well suited for acousto‐optic device applications. Acousto‐optic figure of merit is 50.6 × 10−18 sec3∕g and acoustic absorption is about 1.2 dB∕cm at 200 MHz.

CONTROL OF FACET DAMAGE IN GaAs LASER DIODES

M. Ettenberg, H. S. Sommers, H. Kressel, and H. F. Lockwood

Appl. Phys. Lett. 18, 571 (1971); http://dx.doi.org/10.1063/1.1653545 (3 pages) | Cited 39 times

Online Publication Date: 22 October 2003

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Antireflecting films of SiO, applied to one facet of a laser diode, substantially increase the threshold for catastrophic facet failure. Tripling of the allowable peak power from one end of single‐heterojunction ``close‐confinement'' lasers is reported. The increase appears to be too large for a simple model of damage by optical absorption at an imperfection near the surface.

RAMAN SCATTERING OF ION‐IMPLANTED GaAs

P. S. Peercy

Appl. Phys. Lett. 18, 574 (1971); http://dx.doi.org/10.1063/1.1653546 (3 pages) | Cited 19 times

Online Publication Date: 22 October 2003

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We report measurements of Raman scattering in ion‐implanted semiconductors. The broadening of the phonon modes produced by lattice strains on Xe ion implantation is measured for GaAs. The measurements show pronounced effects on the linewidth at moderate fluence levels and demonstrate that Raman scattering can provide a sensitive technique for probing stresses introduced by ion implantation. At higher‐fluence levels where the material begins to transform from crystalline to amorphous, the linewidth is found to increase rapidly with fluence.

HIGH AVERAGE POWER OPERATION AND NONLINEAR OPTICAL GENERATION WITH THE Nd:YAlO3 LASER

G. A. Massey and J. M. Yarborough

Appl. Phys. Lett. 18, 576 (1971); http://dx.doi.org/10.1063/1.1653547 (4 pages) | Cited 31 times

Online Publication Date: 22 October 2003

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Using a Nd: YAlO3 rod 3 in. long, we have obtained 75‐W continuous output at 1.08 μ and 35 W at 1.0645 μ, both linearly polarized. Laser action has been obtained at five wave‐lengths between 1.06 and 1.10 μ and at two lines near 1.34 μ at room temperature. The preferred polarization for each of these lines has been determined. Intracavity second harmonic and parametric generation with LiNbO3 in this laser have produced a 3‐W average in a single beam at 5400 Å and a 775‐mW average at 2.16 μ. The laser is free from depolarizing thermal birefringence at pump powers up to 4.5 kW.

RELATIVE RAMAN CROSS SECTION FOR N2, O2, CO, CO2, SO2, AND H2S

D. G. Fouche and R. K. Chang

Appl. Phys. Lett. 18, 579 (1971); http://dx.doi.org/10.1063/1.1653548 (2 pages) | Cited 22 times

Online Publication Date: 22 October 2003

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The relative Raman cross sections of gases which are of interest in atmospheric pollutant studies have been measured at 5145 Å. These relative cross sections compared to that of N2 are as follows: O2 (1.2), CO (0.91), CO2 (1.5), SO2 (5.5), and H2S (6.6). The Raman cross section of N2 compared to that of benzene has also been measured. Using the absolute cross section of benzene determined by Skinner and Nilsen, the measured Raman cross section of N2 is σN2 = (2.6 ± 1) × 10−31 cm2∕sr at 5145 Å.

SENSITIVE TECHNIQUE FOR STUDYING ION‐IMPLANTATION DAMAGE

E. P. EerNisse

Appl. Phys. Lett. 18, 581 (1971); http://dx.doi.org/10.1063/1.1653549 (3 pages) | Cited 67 times

Online Publication Date: 22 October 2003

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The lattice damage created by ion implantation is investigated by measuring the stresses lateral to the implanted surface which are caused by the specific volume expansion inherent with lattice damage. A cantilever beam‐shaped sample is implanted on one side and the position of the free end is monitored by measuring the capacitance between it and a fixed electrode. Results are presented for various 220‐keV noble ion implants into Si. A new region is observed at very low fluences (1011 cm−2 of 20Ne), where damage is introduced linearly with fluence. The distinct maximum in the stress which appears at higher fluences is attributed to an elastic‐plastic transformation.

SUPERCONDUCTING PROPERTIES OF MULTIFILAMENTARY V3Ga WIRES

M. Suenaga and W. B. Sampson

Appl. Phys. Lett. 18, 584 (1971); http://dx.doi.org/10.1063/1.1653550 (3 pages) | Cited 27 times

Online Publication Date: 22 October 2003

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Multifilamentary superconducting V3Ga wires in a Cu☒Ca solid‐solution matrix have been prepared. The superconducting critical temperature Tc and the critical current density Jc(H) are presented for wires with various heat treatments.
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