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1 Jan 1971

Volume 18, Issue 1, pp. 1-37


ELECTRIC FIELD CONTROL OF THE ELASTIC COMPLIANCE IN LITHIUM THALLIUM TARTRATE

E. Sawaguchi and L. E. Cross

Appl. Phys. Lett. 18, 1 (1971); http://dx.doi.org/10.1063/1.1653457 (2 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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In lithium thallium tartrate monohydrate it has been demonstrated that at temperatures close to the ferroelectric transition near 10 °K, the elastic compliance s44E may be controlled by an electric field applied in the [100] direction. The compliance changes by a factor of 25 for fields of order 10 kV∕cm.

BIREFRINGENCE COMPENSATION AND TEM00 MODE ENHANCEMENT IN A Nd: YAG LASER

W. C. Scott and M. de Wit

Appl. Phys. Lett. 18, 3 (1971); http://dx.doi.org/10.1063/1.1653466 (2 pages) | Cited 45 times

Online Publication Date: 22 October 2003

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A Nd: YAG laser has been operated under strong thermal focusing and birefringent conditions and has yielded both linearly polarized output with negligible power loss and TEM00 output of 50–70% of the multimode power. The laser consisted of two Nd: YAG rods separated by a 90° crystal quartz polarization rotator together with a convex mirror and used no special cooling techniques. The performance of this laser, which agreed with theoretical predictions, indicates that this design approach may be generally applicable to the problem of thermally induced aberrations in such systems.

OPTICAL CONTRAST ENHANCEMENT IN LIQUID CRYSTAL DEVICES BY SPATIAL FILTERING

H. J. Caulfield and R. A. Soref

Appl. Phys. Lett. 18, 5 (1971); http://dx.doi.org/10.1063/1.1653470 (2 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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A spatial filtering technique has been demonstrated for contrast enhancement. Coherent light transmitted through a liquid crystal device is Fourier transformed. Undeviated (or deviated) light is spatially filtered at the Fourier transform plane, giving a high‐contrast positive (or negative) image. The method is applicable to any type of liquid crystal whose light‐deviating properties depend upon external stimuli.

NEW METHOD OF OBSERVING ELECTRON PENETRATION PROFILES IN SOLIDS

M. Hatzakis

Appl. Phys. Lett. 18, 7 (1971); http://dx.doi.org/10.1063/1.1653471 (4 pages) | Cited 13 times

Online Publication Date: 22 October 2003

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Electron penetration and scattering in solids can be measured by electron beam exposure of a positive electron resist. The beam profile is obtained by exposing a long line of controlled width in a thick layer of poly‐(methyl methacrylate) resist. The cross section of the developed line which can be examined in the scanning electron microscope represents the beam density profile.

DOUBLE PHASE MATCHING OF ACOUSTICALLY INDUCED OPTICAL HARMONIC GENERATION

D. F. Nelson and M. Lax

Appl. Phys. Lett. 18, 10 (1971); http://dx.doi.org/10.1063/1.1653458 (3 pages) | Cited 5 times

Online Publication Date: 22 October 2003

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The concept of double phase matching of a two‐step contribution to acoustically induced optical harmonic generation (AIOHG) is proposed. For plane waves the doubly phase‐matched AIOH grows as the fourth power of the crystal length. Its intensity can be 109 times as strong as that produced by single phase matching under reasonable conditions.

INVESTIGATIONS OF COHERENT OSCILLATIONS IN AN ARGON ION LASER PLASMA TUBE

D. C. Galehouse, U. Ingard, T. J. Ryan, and S. Ezekiel

Appl. Phys. Lett. 18, 13 (1971); http://dx.doi.org/10.1063/1.1653459 (3 pages) | Cited 9 times

Online Publication Date: 22 October 2003

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Coherent fluctuations in the light of an argon ion laser have been investigated and laser operation free from these fluctuations has been achieved. Oscillations in the kHz range have been identified as anode oscillations and were suppressed by use of an auxiliary cathode. Oscillations related to the longitudinal magnetic field and to striations were eliminated by choice of plasma tube operating conditions. Wideband incoherent noise was less than 0.2%.

LASER EMISSION FROM He‐air‐CH4 AND He‐air‐C3H8 MIXTURES

J. D. Barry, W. E. Boney, and J. E. Brandelik

Appl. Phys. Lett. 18, 15 (1971); http://dx.doi.org/10.1063/1.1653460 (2 pages) | Cited 6 times

Online Publication Date: 22 October 2003

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Laser emission from a He‐air‐CH4 mixture has been observed from 4.9668 to 5.5056μ. Most of the cw laser emissions have been identified to result from P(J) vibrational‐rotational transitions in CO. Multiline power levels of over 1 W were achieved with the CH4 mixture. The lasing molecules are apparently formed by chemical‐collisional processes within the discharge. Similar cw laser emissions from 4.9467 to 5.5717μ were observed from a He‐air‐C3H8 mixture.

NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GaAs

J. A. Borders

Appl. Phys. Lett. 18, 16 (1971); http://dx.doi.org/10.1063/1.1653461 (3 pages) | Cited 18 times

Online Publication Date: 22 October 2003

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Ion implantation of 400‐keV Se+ and Xe+ in GaAs at room temperature has been found to induce a strong optical absorption in the photon energy range 0.5 eV ≤ hv ≤ Eg. This absorption is used as a measure of the ion‐bombardment damage in GaAs and is similar to that seen in neutron‐damaged GaAs. The fluence dependence and annealing of the damage are presented and compared to previous work. An annealing stage is seen near 230 °C and corresponds to the annealing observed in radiation‐damaged GaAs.

LIGHT MODULATIONS BY THIN CdS PLATELET OSCILLATORS

H. Preier and H. Kuzmany

Appl. Phys. Lett. 18, 19 (1971); http://dx.doi.org/10.1063/1.1653462 (4 pages)

Online Publication Date: 22 October 2003

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The modulation of the light intensity of a He☒Ne laser operating at 0.633 and 3.4μ, by an acousto‐electric oscillator of photoconducting CdS with the c axis at 30° to the platelet normal was studied. A fast and a slow modulation effect was observed which were ascribed to an electro‐optic and an elasto‐optic effect, respectively. The elasto‐optic effect was connected to the occurrence of current modulation. The acoustic flux was found to increase with time even after the current had reached a saturation value.

ELECTRON DIFFUSION EFFECTS DURING HOLOGRAM RECORDING IN CRYSTALS

J. J. Amodei

Appl. Phys. Lett. 18, 22 (1971); http://dx.doi.org/10.1063/1.1653463 (3 pages) | Cited 49 times

Online Publication Date: 22 October 2003

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Diffusion effects are shown to give rise to strong electric fields when insulators with trapped carriers are exposed to holographic interference patterns. A simple physical model is used to calculate the field generated by sinusoidal light intensity distributions of typical wave‐lengths. This phenomenon can be utilized for recording phase holograms in electro‐optic crystals and as means of enhancing the efficiency and permanence of absorption holograms in photochromic materials.

HOW TO MEASURE SUBNANOSECOND LASER PULSES AT 10.6μ

C. K. N. Patel

Appl. Phys. Lett. 18, 25 (1971); http://dx.doi.org/10.1063/1.1653464 (4 pages) | Cited 4 times

Online Publication Date: 22 October 2003

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This letter describes techniques for measurement of widths of subnanosecond pulses at 10.6μ obtained from mode‐locked high‐pressure CO2 lasers. Two novel linear correlation techniques are proposed. These are based upon (1) the effect of photon flux on free carriers in semiconductors and (2) a fast shutter produced in a semiconductor.

INDIRECT ELECTRON DRIFT VELOCITY VERSUS ELECTRIC FIELD MEASUREMENT IN GaAs

E. M. Bastida, G. Fabri, V. Svelto, and F. Vaghi

Appl. Phys. Lett. 18, 28 (1971); http://dx.doi.org/10.1063/1.1653465 (4 pages) | Cited 12 times

Online Publication Date: 22 October 2003

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See Also: Erratum

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A measurement of the drift velocity versus electric field in GaAs has been determined for electric fields between 15 and 90 kV∕cm. The experimental values were obtained from the measurement of the current‐voltage characteristic of a Gunn diode, done during the transit time of a domain.

DETECTION OF SURFACE WAVES WITH GaAs BULK EFFECT DIODE

H. Hayakawa, S. Takada, T. Ishiguro, and N. Mikoshiba

Appl. Phys. Lett. 18, 31 (1971); http://dx.doi.org/10.1063/1.1653467 (3 pages) | Cited 1 time

Online Publication Date: 22 October 2003

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See Also: Erratum

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Surface waves propagating on LiNbO3 crystal have been detected in the frequency range 105–300 MHz using a subcritically doped GaAs bulk diode which is placed close to the surface of LiNbO3. When the diode is biased with high electric field for giving rise to an rf negative differential conductivity, the amplification of signals takes place in the diode and is responsible for the detection of the surface waves with sufficient sensitivity.

ULTRAFAST LASER‐INDUCED STRESS WAVES IN SOLIDS

E. D. Jones

Appl. Phys. Lett. 18, 33 (1971); http://dx.doi.org/10.1063/1.1653468 (3 pages) | Cited 10 times

Online Publication Date: 22 October 2003

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Shock wave and impulse measurements produced by a single 2–3 psec laser pulse are presented for aluminum. A simple model describing this phenomenon is discussed.

BIAS‐DEPENDENT STRUCTURE IN EXCESS NOISE IN GaAs SCHOTTKY TUNNEL JUNCTIONS

Tom Carruthers

Appl. Phys. Lett. 18, 35 (1971); http://dx.doi.org/10.1063/1.1653469 (3 pages) | Cited 3 times

Online Publication Date: 22 October 2003

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Large‐amplitude excess noise has been observed in the tunneling current of degenerate p‐type GaAs☒Au Schottky junctions. At 4.2 K the noise voltage exhibits well‐defined peaks as a function of bias voltage. The background noise exhibits a 1∕f‐type spectral response, but the spectral response of some of the peaks indicates that tunneling via surface states with a single average lifetime occurs. Peaks in the noise voltage correspond in bias voltage position with structure in d2I∕dV2.
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